专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20090205810A1 LIQUID COOLING DEVICE 审中-公开
标题翻译：液体冷却装置
公开(公告)号：US20090205810A1
公开(公告)日：2009-08-20
申请号：US12033249
申请日：2008-02-19
申请人： Cheng-Feng WAN , Hao-Hui LIN , Su-Chen HU
发明人： Cheng-Feng WAN , Hao-Hui LIN , Su-Chen HU
IPC分类号： F28F7/02
CPC分类号： H01L23/473 , G06F1/20 , G06F2200/201 , H01L2924/0002 , H01L2924/00
摘要： A liquid cooling device includes a liquid block, a heat-dissipating plate, a thermal-conductive pipe, a pump and a heat sink. The liquid block, the pump, and the heat sink are connected by ducts. The pump drives a coolant to circulate among them. The thermal-conductive pipe is mounted on the heat-dissipating plate. Both ends of the thermal-conductive pipe are connected to the liquid block for the coolant to flow through. The liquid block and the heat sink are respectively mounted on the corresponding electronic devices to absorb heat using the circulating coolant. The heat sink is used to dissipate heat from another heat-generating electronic device. Therefore, one less liquid block is required, and the production cost becomes lower.
摘要翻译：液体冷却装置包括液体块，散热板，导热管，泵和散热器。液体块，泵和散热器通过管道连接。泵驱动冷却液在它们之间循环。导热管安装在散热板上。导热管的两端连接到液体块以使冷却剂流过。液体块和散热器分别安装在相应的电子设备上以使用循环冷却剂吸收热量。散热器用于从另一个发热电子设备散发热量。因此，需要少量的液体块，并且生产成本降低。

92. 发明申请

US20090029500A1 HERMETIC PACAKGING AND METHOD OF MANUFACTURE AND USE THEREFORE 审中-公开
标题翻译： HERMETIC PACAKGING及其制造和使用方法
公开(公告)号：US20090029500A1
公开(公告)日：2009-01-29
申请号：US12101957
申请日：2008-06-08
申请人： Chang-Feng Wan
发明人： Chang-Feng Wan
IPC分类号： H01L21/50 , B81C1/00
CPC分类号： B81C1/00269 , H01L2924/16235 , Y10T156/1052
摘要： An embodiment of the present invention provides a method of manufacturing hermetic packaging for devices on a substrate wafer, comprising forming a plurality of adhesive rings on a cap wafer or the substrate wafer, bonding the cap wafer to the substrate wafer with an adhesive layer, forming trenches in the cap wafer and the adhesive rings along outer rim of the adhesive rings, and covering sidewall of the trenches by at least one deposited film to provide a diffusion barrier to moisture or gas.
摘要翻译：本发明的一个实施例提供了一种制造衬底晶片上器件的密封封装的方法，包括在盖晶片或衬底晶片上形成多个粘合环，将盖晶片与粘合剂层接合，形成盖晶片中的沟槽和沿着粘合环的外边缘的粘合剂环，并且通过至少一个沉积膜覆盖沟槽的侧壁以提供对湿气或气体的扩散阻挡。

93. 发明申请

US20070149053A1 Electrical connector 失效
标题翻译：电连接器
公开(公告)号：US20070149053A1
公开(公告)日：2007-06-28
申请号：US11526535
申请日：2006-09-25
申请人： Feng Wan , Jin-Kui Hu , Guo-Hua Zhang
发明人： Feng Wan , Jin-Kui Hu , Guo-Hua Zhang
IPC分类号： H01R13/648
CPC分类号： H01R12/722 , H01R13/6461 , H01R13/6477
摘要： An electrical connector (100) adapted for electrically connecting with corresponding mating connectors (200) includes an insulative housing (1) defining a base portion (10), a couple of upper and lower tongue plates (11, 12) extending forwardly from the base portion (10), as well as a holding plate (13) between the tongue plates (11, 12). First and second sets of conductive terminals (31, 32) are accommodated in the tongue plates (11, 12) and a couple of upper and lower shielding members (21, 22) enclosing the tongue plates for surrounding the conductive terminals. The dimension of the holding plate (13) is greater than the dimension of the adjacent dielectric portions of the mating connectors (200) in a vertical direction. When two mating connectors are inserted to the housing for connecting with the electrical connector, they cannot intervene with each other so as to affect signal transmission.
摘要翻译：适于与对应的配合连接器（200）电连接的电连接器（100）包括限定基部（10）的绝缘壳体（1），从底座向前延伸的一对上下舌板（11,12）部分（10），以及在舌板（11,12）之间的保持板（13）。第一和第二组导电端子（31,32）容纳在舌板（11,12）中，以及一对封闭舌板的上下屏蔽构件（21,22），用于包围导电端子。保持板（13）的尺寸大于垂直方向上配合连接器（200）的相邻电介质部分的尺寸。当将两个配合连接器插入到壳体中以与电连接器连接时，它们不能相互干涉以影响信号传输。

94. 外观设计

USD538232S1 Electrical connector 有权
公开(公告)号：USD538232S1
公开(公告)日：2007-03-13
申请号：US29245449
申请日：2005-12-22
申请人： Feng Wan , Jin-Kui Hu , Guo-Hua Zhang
设计人： Feng Wan , Jin-Kui Hu , Guo-Hua Zhang

95. 发明申请

US20050017313A1 System and method of fabricating micro cavities 失效
标题翻译：制造微腔的系统和方法
公开(公告)号：US20050017313A1
公开(公告)日：2005-01-27
申请号：US10712196
申请日：2003-11-13
申请人： Chang-Feng Wan
发明人： Chang-Feng Wan
IPC分类号： B81B7/00 , B81C1/00 , G01L9/00 , H01L21/00 , H01L21/44 , H01L21/46 , H01L21/48 , H01L29/82
CPC分类号： G01L9/0042 , B81B2201/0264 , B81B2203/0118 , B81B2203/0307 , B81B2203/0384 , B81B2207/07 , B81C1/00095 , B81C1/00285 , B81C1/00333 , B81C2201/019 , H01G5/16 , H01G5/40 , H01L29/82
摘要： A system and method for manufacturing micro cavities at the wafer level using a unique, innovative MEMS (MicroElectroMechanical Systems) process, wherein micro cavities are formed, with epoxy bonded single-crystalline silicon membrane as cap and deposited and/or electroplated metal as sidewall, on substrate wafers. The epoxy is also the sacrificial layer. It is totally removed from within the cavity through small etch access holes etched in the silicon cap before the etch access holes are sealed under vacuum. The micro cavities manufactured therein can be used as pressure sensors or for packaging MEMS devices under vacuum or inert environment. In addition, the silicon membrane manufactured therein can be used to manufacture RF switches.
摘要翻译：一种使用独特的创新MEMS（微电子机械系统）工艺在晶片级制造微腔的系统和方法，其中形成微腔，其中环氧键合单晶硅膜作为盖并且沉积和/或电镀金属作为侧壁，在衬底晶圆上。环氧树脂也是牺牲层。在蚀刻访问孔在真空下密封之前，通过蚀刻在硅帽中的小蚀刻访问孔，完全从腔内移除。其中制造的微孔可用作压力传感器或用于在真空或惰性环境下包装MEMS器件。此外，其中制造的硅膜可以用于制造RF开关。

96. 发明授权

US06538296B1 Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore 失效
标题翻译：由单晶硅制成的微机电装置及其制造方法
公开(公告)号：US06538296B1
公开(公告)日：2003-03-25
申请号：US09461018
申请日：1999-12-15
申请人： Chang-Feng Wan
发明人： Chang-Feng Wan
IPC分类号： H01L2982
CPC分类号： B81C1/0019 , B81C2201/0108 , B81C2201/019
摘要： A micro-electro-mechanical device and method of manufacture therefore with a suspended structure formed from mono-crystalline silicon, bonded to a substrate wafer with an organic adhesive layer serving as support and spacer and the rest of the organic adhesive layer serving as a sacrificial layer, which is removed by a dry etch means. Said substrate wafer may contain integrated circuits for sensing and controlling the device.
摘要翻译：因此，微机电装置及其制造方法由具有由单晶硅形成的悬置结构的方式制成，其结合到具有有机粘合剂层作为支撑和间隔物的衬底晶片上，其余的有机粘合层用作牺牲层，其通过干蚀刻装置除去。所述衬底晶片可以包含用于感测和控制该器件的集成电路。

97. 发明授权

US6060336A Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore 失效
公开(公告)号：US6060336A
公开(公告)日：2000-05-09
申请号：US211486
申请日：1998-12-11
申请人： Chang-Feng Wan
发明人： Chang-Feng Wan
IPC分类号： B81B3/00 , H01L21/00 , B24B1/00 , H01L21/302 , H01L21/461 , H01L29/82
CPC分类号： B81C1/0019 , B81C2201/0108 , B81C2201/019
摘要： A micro-electro-mechanical device and method of manufacture therefore with a suspended structure formed from mono-crystalline silicon, bonded to a substrate wafer with an organic adhesive layer serving as support and spacer and the rest of the organic adhesive layer serving as a sacrificial layer, which is removed by a dry etch means. Said substrate wafer may contain integrated circuits for sensing and controlling the device.

98. 发明授权

US4807004A Tin oxide CCD imager 失效
标题翻译：氧化锡CCD成像仪
公开(公告)号：US4807004A
公开(公告)日：1989-02-21
申请号：US935664
申请日：1986-11-26
申请人： Chang-Feng Wan , Yingsheng Tung , Steven N. Frank
发明人： Chang-Feng Wan , Yingsheng Tung , Steven N. Frank
IPC分类号： H01L29/423 , H01L29/768 , H01L31/18 , H01L29/78
CPC分类号： H01L29/76883 , H01L29/42396 , H01L31/1884 , Y02E10/50
摘要： A novel process for fabricating a CCD imager arrray (10) having a tin oxide electrode monolayer (18) is disclosed. The process includes a low pressure chemical vapor deposition step using tetramethyltin and oxygen, and an ion implantation step that increased conductivity of the tin oxide electrodes to as high as 700 ohm.sup.-1 cm.sup.-1.
摘要翻译：公开了一种用于制造具有氧化锡电极单层（18）的CCD成像器装置（10）的新颖方法。该方法包括使用四甲基锡和氧气的低压化学气相沉积步骤，以及将氧化锡电极的导电率提高到高达700欧姆 - 1厘米-1的离子注入步骤。

99. 发明授权

US4567849A Dipping liquid phase epitaxy for HgCdTe 失效
标题翻译：浸渍液相外延HgCdTe
公开(公告)号：US4567849A
公开(公告)日：1986-02-04
申请号：US607484
申请日：1984-05-07
申请人： Chang-Feng Wan
发明人： Chang-Feng Wan
IPC分类号： C30B19/02 , B05C3/10 , H01L21/208
CPC分类号： C30B19/02 , C30B29/48
摘要： For HgCdTe liquid phase epitaxy (LPE), in situ differential thermal analysis apparatus is used to precisely monitor the liquidus temperature of each HgCdTe melt. The neutral body, e.g. a slug of copper enclosed in a silica ampoule, is placed near the LPE reactor in a furnace. During heating or cooling, differential sensing of a pair of thermocouples (in the melt and in the neutral body) will show an accelerated change at transformation points, since at these points the temperature of the melt will be changed by the energy of the physical change, while that of the neutral body remains subject only to passive heat transfer. Thus, the actual liquidus temperature of each melt can be measured with extreme precision, and isothermal or programmed cooling methods of LPE can be precisely and reliably controlled under production conditions.
摘要翻译：对于HgCdTe液相外延（LPE），使用原位差分热分析仪器精确监测每个HgCdTe熔体的液相线温度。中性体，例如将封闭在二氧化硅安瓿中的铜块放置在炉中的LPE反应器附近。在加热或冷却过程中，一对热电偶（在熔体和中性体中）的差分感应将在相变点显示加速变化，因为在这些点上，熔体的温度将被物理变化的能量所改变，而中性身体的物体仍然只受到被动热传递。因此，可以极精度地测量每个熔体的实际液相线温度，并且可以在生产条件下精确可靠地控制LPE的等温或程序冷却方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式