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    • 94. 发明申请
    • METHOD AND DEVICE FOR PERFORMING FRAME ERASURE CONCEALMENT ON HIGHER-BAND SIGNAL
    • 用于对高频信号进行帧擦除的方法和装置
    • US20090076808A1
    • 2009-03-19
    • US12273391
    • 2008-11-18
    • Jianfeng XuLei MiaoChen HuQing ZhangLijing XuWei LiZhengzhong DuYi YangFengyan QiWuzhou ZhanDongqi Wang
    • Jianfeng XuLei MiaoChen HuQing ZhangLijing XuWei LiZhengzhong DuYi YangFengyan QiWuzhou ZhanDongqi Wang
    • G10L11/04
    • G10L19/005G10L19/0204
    • A method for performing a frame erasure concealment for a higher-band signal involves calculating a periodic intensity of the higher-band signal with respect to pitch period information of a lower-band signal; comparing the periodic intensity to a preconfigured threshold and, if the periodic intensity is greater or equal to the preconfigured threshold, performing the frame erasure concealment with a pitch period repetition based method. If the periodic intensity is less than the preconfigured threshold, performing the frame erasure concealment with a previous frame data repetition based method. A device for performing a frame erasure concealment includes a periodic intensity calculation module, a pitch period repetition module, and a previous frame data repetition module. The pitch period repetition module performs the frame erasure concealment with a pitch period repetition based method; and the previous frame data repetition module performs the frame erasure concealment with a previous frame data repetition based method.
    • 用于执行较高频带信号的帧擦除隐藏的方法包括:计算相对于较低频带信号的音调周期信息的较高频带信号的周期性强度; 将周期性强度与预配置的阈值进行比较,并且如果周期性强度大于或等于预配置阈值,则以基于音调周期重复的方法执行帧擦除隐藏。 如果周期性强度小于预配置阈值,则使用先前基于帧数据重复的方法来执行帧擦除隐藏。 用于执行帧擦除隐藏的装置包括周期性强度计算模块,音调周期重复模块和先前的帧数据重复模块。 音调周期重复模块以音调周期重复方式执行帧擦除隐藏; 前一帧数据重复模块利用先前基于帧数据重复的方法执行帧擦除隐藏。
    • 96. 发明申请
    • HEAT-DISSIPATING DEVICE WITH HIGH HEAT-DISSIPATING EFFICIENCY
    • 具有高散热效率的散热装置
    • US20090040723A1
    • 2009-02-12
    • US11834501
    • 2007-08-06
    • Hao-Hui LinSu-Chen Hu
    • Hao-Hui LinSu-Chen Hu
    • H05K7/20
    • H05K7/20518H05K7/20254
    • A heat-dissipating device includes a housing, a partitioning member, a finned structure, and a high thermal-conductivity strip. The housing defines an inner space, and has a top surface formed with a retaining groove, and an inlet and an outlet. The partitioning member is disposed in the inner space so as to divide the inner space into first and second compartments that are respectively connected to the inlet and the outlet. The finned structure includes a plurality of partitioning plates disposed in the first compartment so as to divide the first compartment into a plurality of partitioned sections that are connected to form a continuous meandering fluid path, and a plurality of heat-dissipating fins disposed in each of the partitioned sections. The conductive strip is secured in the retaining groove in the top surface of the housing and has a thermal conductivity higher than that of the housing.
    • 散热装置包括壳体,分隔构件,翅片结构和高导热带。 壳体限定内部空间,并且具有形成有保持槽的顶表面,以及入口和出口。 分隔构件设置在内部空间中,以将内部空间分成分别连接到入口和出口的第一和第二隔室。 翅片结构包括设置在第一隔室中的多个分隔板,以便将第一隔室分成多个连接以形成连续曲折流体路径的分隔区段,以及多个散热翅片 分区。 导电条被固定在壳体的顶表面中的保持槽中,并且具有比外壳高的导热性。
    • 97. 发明授权
    • Ventilated platen/polishing pad assembly for chemcial mechanical polishing and method of using
    • 用于化学机械抛光的通风压板/抛光垫组件及其使用方法
    • US06722949B2
    • 2004-04-20
    • US09813238
    • 2001-03-20
    • Tien-Chen HuJih-Churng Twu
    • Tien-Chen HuJih-Churng Twu
    • B24B100
    • B24B37/16B24B37/26B24D7/10
    • A ventilated platen/polishing pad assembly for chemical mechanical polishing copper conductors on a semiconductor wafer is disclosed. The ventilated platen is constructed by a platen having a multiplicity of apertures through a thickness of the platen, and a polishing pad that has a multiplicity of apertures for fluid communication with the multiplicity of apertures in the platen such that a gas can flow through the ventilated platen and the ventilated polishing pad to mix with a polishing slurry solution dispensed on top of the polishing pad. When an oxidizing gas is mixed with the slurry solution, the mass transfer process during the chemical mechanical polishing can be improved and thus improving the polishing uniformity of the copper surface. The invention further discloses a method for chemical mechanical polishing copper conductors on a semiconductor wafer by dispensing a polishing slurry/oxidizing gas mixture onto a top surface of a polishing pad for engaging a wafer surface and thus improving the polishing uniformity and preventing corrosion or erosion of the fresh copper surface by the acidic or basic components contained in the slurry solution.
    • 公开了一种在半导体晶片上用于化学机械抛光铜导体的通风压板/抛光垫组件。 通风压板由具有穿过压板的厚度的多个孔的压板构成,抛光垫具有多个孔,用于与压板中的多个孔流体连通,使得气体可以流过通风的 压板和通风的抛光垫与分配在抛光垫顶部的抛光浆液混合。 当将氧化性气体与浆料溶液混合时,可以提高化学机械研磨过程中的传质过程,从而提高铜表面的研磨均匀性。 本发明还公开了一种通过将抛光浆料/氧化气体混合物分配到抛光垫的顶表面上用于接合晶片表面从而提高抛光均匀性并防止腐蚀或腐蚀的方法,用于化学机械抛光半导体晶片上的铜导体 新鲜的铜表面由浆液中所含的酸性或碱性成分溶液组成。
    • 98. 发明授权
    • Apparatus and method for cleaning the polishing pad of a linear polisher
    • 用于清洁线性抛光机的抛光垫的装置和方法
    • US06561880B1
    • 2003-05-13
    • US10060824
    • 2002-01-29
    • Feng-Chih HsuTien-Chen Hu
    • Feng-Chih HsuTien-Chen Hu
    • B24B100
    • B24B53/017B24B21/04
    • A linear chemical mechanical polishing apparatus equipped with a brush means and a solvent spray means for cleaning the polishing pad during a chemical mechanical polishing process is described. The brush means may be provided in a cylindrical, tubular shape equipped with bristle for cleaning the surface grooves on the polishing pad and thus, removing large contaminating particles to prevent the particles from scratching the wafer surface. The solvent spray means is used to spray a jet of solvent such as deionized water onto the brush means and the polishing pad for removing debris generated by the polishing process and the cleaning process.
    • 描述了在化学机械抛光过程中配备有刷装置和用于清洁抛光垫的溶剂喷涂装置的线性化学机械抛光装置。 刷装置可以设置成装有刷毛的圆柱形管状形状,用于清洁抛光垫上的表面槽,从而去除大的污染颗粒以防止颗粒刮擦晶片表面。 溶剂喷雾装置用于将溶剂如去离子水喷射到刷装置和抛光垫上,以除去由抛光过程产生的碎屑和清洁过程。
    • 99. 发明授权
    • Sub-threshold memory cell circuit with high density and high robustness
    • 子阈值存储单元电路具有高密度和高鲁棒性
    • US08559213B2
    • 2013-10-15
    • US13322859
    • 2009-08-13
    • Jun YangNa BaiJie LiChen HuLongxing Shi
    • Jun YangNa BaiJie LiChen HuLongxing Shi
    • G11C11/00
    • G11C11/412
    • A high-density and high-robustness sub-threshold memory cell circuit, having two PMOS transistors P1 and P2 and five NMOS transistors N1˜N5, wherein, the each base electrode of the two PMOS transistors and NMOS transistors N3, N4, and N5 is connected with the local grid electrode respectively; the base electrode of the NMOS transistors N1 and N2, are grounded respectively; the NMOS transistor N1 form an phase inverter with the PMOS transistor P1, and the NMOS transistor N2 form another phase inverter with the PMOS transistor P2; the two phase inverters are connected with each other in a cross coupling manner via the cut-off NMOS transistor N5, the output end of the phase inverter N1 and P1 directly connected to the input end of the phase inverter N2 and P2, and the output end of the phase inverter N2 and P2 connected to the input end of the phase inverter N1 and P1 via the cut-off NMOS transistor N5; the NMOS transistor N3 is connected with the write bit line (WBL) of the phase inverter N1 and P1, and the NMOS transistor N4 is connected with the NOT WBL and read word line (RWL) of the phase inverter N2 and P2.
    • 具有两个PMOS晶体管P1和P2以及五个NMOS晶体管N1〜N5的高密度和高鲁棒性子阈值存储单元电路,其中,两个PMOS晶体管和NMOS晶体管N3,N4和N5的每个基极 分别与局部栅电极连接; NMOS晶体管N1和N2的基极分别接地; NMOS晶体管N1与PMOS晶体管P1形成相位逆变器,NMOS晶体管N2与PMOS晶体管P2形成另一个反相器; 两相逆变器通过截止NMOS晶体管N5,直流连接到相位逆变器N2和P2的输入端的相位反相器N1和P1的输出端以交叉耦合方式彼此连接,并且输出 通过截止NMOS晶体管N5连接到相位反相器N1和P1的输入端的相位逆变器N2和P2的端部; NMOS晶体管N3与相位反相器N1和P1的写入位线(WBL)连接,NMOS晶体管N4与相位逆变器N2和P2的NOT WBL和读出字线(RWL)连接。