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1. 发明授权

US11629054B2 Boron nitride nanotube purification 有权
公开(公告)号：US11629054B2
公开(公告)日：2023-04-18
申请号：US16349483
申请日：2017-11-29
申请人： BNNT, LLC
发明人： Thomas G. Dushatinski , Kevin C. Jordan , Michael W. Smith , R. Roy Whitney , Jonathan C. Stevens
IPC分类号： H01M4/02 , C01B21/064 , C04B35/583 , C01B35/08 , C01B35/14 , B82Y30/00 , B82Y40/00
摘要： Disclosed herein are processes for purifying as-synthesized boron nitride nanotube (BNNT) material to remove impurities of boron, amorphous boron nitride (a-BN), hexagonal boron nitride (h-BN) nanocages, h-BN nanosheets, and carbon-containing compounds. The processes include heating the BNNT materials at different temperatures in the presence of inert gas and a hydrogen feedstock or in the presence of oxygen.

2. 发明申请

US20080233030A1 Process for Manufacturing an Electrochemical Device 失效
标题翻译：电化学装置制造工艺
公开(公告)号：US20080233030A1
公开(公告)日：2008-09-25
申请号：US10593481
申请日：2004-03-30
申请人： Agustin Sin Xicola , A. Yuri Dubitsky , Enrico Albizzati , Evgeny Kopnin , Elena Roda
发明人： Agustin Sin Xicola , A. Yuri Dubitsky , Enrico Albizzati , Evgeny Kopnin , Elena Roda
IPC分类号： C01F17/00 , C01F11/02 , C01G37/02 , C01G25/02 , C01G27/02 , C01G23/04 , C01F7/02 , C01D1/02 , C01G30/00 , C01B35/08 , C01G11/00 , C01G53/04 , C01G51/04 , C01G3/02 , C01G5/00 , C01G7/00 , C01G15/00 , C01G45/02 , C01G47/00 , C01G41/02 , C01G39/02 , C01G31/02 , C01G33/00 , C01G35/00 , C01F15/00 , C01G19/02 , C01G43/01
CPC分类号： B82Y30/00 , C01B13/18 , C01B13/185 , C01P2004/62 , C01P2004/64 , H01M4/9066 , H01M8/1253 , H01M8/126 , Y02E60/525 , Y02P70/56
摘要： Process for manufacturing an electrochemical device including a cathode, an anode and at least one electrolyte membrane disposed between the anode and the cathode, wherein at least one of the cathode, the anode and the electrolyte membrane, contains at least a ceramic material.
摘要翻译：用于制造包括阴极，阳极和设置在阳极和阴极之间的至少一个电解质膜的电化学装置的方法，其中阴极，阳极和电解质膜中的至少一个至少包含陶瓷材料。

3. 发明公开

US20230286801A1 BORON NITRIDE NANOTUBE PURIFICATION 审中-公开
公开(公告)号：US20230286801A1
公开(公告)日：2023-09-14
申请号：US18121086
申请日：2023-03-14
申请人： BNNT, LLC
发明人： Thomas G. DUSHATINSKI , Kevin C. JORDAN , Michael W. SMITH , R. Roy WHITNEY , Jonathan C. STEVENS
IPC分类号： C01B21/064 , C04B35/583 , C01B35/08 , C01B35/14
CPC分类号： C01B21/0648 , C01B35/08 , C01B35/146 , C04B35/583 , B82Y30/00
摘要： Disclosed herein are processes for purifying as-synthesized boron nitride nanotube (BNNT) material to remove impurities of boron, amorphous boron nitride (a-BN), hexagonal boron nitride (h-BN) nanocages, h-BN nanosheets, and carbon-containing compounds. The processes include heating the BNNT materials at different temperatures in the presence of inert gas and a hydrogen feedstock or in the presence of oxygen.

4. 发明授权

US4877484A Flocced 2:1 layered silicates and water-resistant articles made therefrom 失效
标题翻译： 2：1层状硅酸盐和防水制品
公开(公告)号：US4877484A
公开(公告)日：1989-10-31
申请号：US15756
申请日：1987-02-17
申请人： Walter J. Bohrn , Richard A. Brubaker , Shelly N. Garman , Lewis K. Hosfeld , Kenneth K. Ko , Thomas M. Tymon
发明人： Walter J. Bohrn , Richard A. Brubaker , Shelly N. Garman , Lewis K. Hosfeld , Kenneth K. Ko , Thomas M. Tymon
IPC分类号： C01B33/26 , B32B33/00 , C01B33/42 , C01B33/44 , C01B35/08 , C01B35/10 , C04B14/20 , C04B35/622 , C04B41/00 , D04H5/08 , D21H13/10 , D21H13/40 , D21H13/44 , D21H17/07 , D21H17/33 , D21H17/66 , D21H27/00 , H01B3/04 , H05K1/03
CPC分类号： C01B35/08 , C01B33/44 , C01B35/10 , C04B14/206 , C04B35/6224 , C04B41/00 , D21H13/44 , H01B3/04 , D21H13/10 , D21H13/40 , D21H17/07 , D21H17/33 , D21H17/66 , H05K1/0373 , Y10S65/90 , Y10T428/252
摘要： Disclosed are flocced mineral materials which may be utilized to prepare high temperature resistant, water resistant articles. These materials are prepared by utilizing, as a starting material, a gellable layered swelled silicate that has an average charge per structural unit that ranges from about -0.4 to -1 and which contains interstitial cations which promote swelling with a source of at least one species of multi-amine derived cations.
摘要翻译：公开了可用于制备耐高温，防水制品的絮状矿物材料。这些材料通过使用可凝胶的层状溶胀硅酸盐作为起始材料来制备，其具有每个结构单元的平均电荷范围为约-0.4至-1，并且其含有间质阳离子，其促进了至少一种物质的来源的溶胀的多胺衍生阳离子。

5. 发明授权

US4201757A Large boron nitride abrasive particles 失效
标题翻译：大型氮化硼磨料颗粒
公开(公告)号：US4201757A
公开(公告)日：1980-05-06
申请号：US942661
申请日：1978-09-15
申请人： Francis R. Corrigan
发明人： Francis R. Corrigan
IPC分类号： B01J3/08 , C01B21/064 , C09K3/14 , C01B35/08
CPC分类号： C01B21/064 , B01J3/08 , C09K3/1409 , B01J2203/066 , C01P2004/61 , C01P2006/10 , C01P2006/21
摘要： Hard boron nitride particles of wurtzite and zincblende crystal structure of larger than 50 microns particle size are formed by subjecting recrystallized pyrolytic boron nitride to dynamic shock treatment to create pressures and temperatures in which the stable form of boron nitride has a wurtzite or zincblende crystal structure.
摘要翻译：通过对再结晶的热解氮化硼进行动态冲击处理以产生其中稳定形式的氮化硼具有纤锌矿或闪锌矿晶体结构的压力和温度，形成粒径大于50微米的纤锌矿和锌辉石晶体结构的硬质氮化硼颗粒。

6. 发明授权

US3881890A Abrasive boron nitride particles containing phosphorus 失效
标题翻译：含磷氮化硼的研磨剂
公开(公告)号：US3881890A
公开(公告)日：1975-05-06
申请号：US35288473
申请日：1973-04-20
申请人： GEN ELECTRIC
发明人： BIRLE JOHN DAVID
IPC分类号： C01B35/08 , B01J3/06 , B24D3/00 , C01B21/064 , C04B35/5831 , C09K3/14 , B24D3/14 , B24D3/28
CPC分类号： C04B35/5831 , C01B21/064 , C01P2004/51 , C01P2004/61 , C09K3/1409 , C09K3/1445
摘要： A tough cubic boron nitride crystal having greater-than-usual impact resistance is prepared by effecting the catalytic transformation of soft hexagonal boron nitride into cubic boron nitride in the presence of sufficient phosphorus or phosphoruscontaining compound to substantially saturate the abrasive crystal with about 0.042 percent by weight of phosphorus.
摘要翻译：通过在存在足够的含磷或含磷化合物的情况下，将软六角形氮化硼催化转化为立方氮化硼，制备了具有大于常规耐冲击性的坚硬立方氮化硼晶体，以使磨料晶体基本上饱和至约0.042 重量百分比的磷。

7. 发明授权

US09409784B2 Method for producing a hard material layer on a substrate, hard material layer and cutting tool 有权
标题翻译：在基材，硬质材料层和切削工具上制造硬质材料层的方法
公开(公告)号：US09409784B2
公开(公告)日：2016-08-09
申请号：US14381275
申请日：2013-02-25
申请人： CERATIZIT AUSTRIA GESELLSCHAFT MBH
发明人： Christoph Czettl
IPC分类号： C23C16/30 , C01B35/08 , B22D11/12 , B22D11/128 , C23C16/44 , C23C16/56 , C23C30/00 , C23C28/04 , B23B27/14 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/40 , C23C16/52
CPC分类号： C01B35/08 , B22D11/1206 , B22D11/1287 , B23B27/14 , B23B2222/28 , B23B2228/04 , B23B2228/105 , C23C16/30 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/403 , C23C16/44 , C23C16/52 , C23C16/56 , C23C28/042 , C23C28/044 , C23C30/005 , Y10T428/265
摘要： A process for producing a hard material layer on a substrate includes depositing a TiCNB hard material layer by chemical vapor deposition (CVD) from a gas system including a titanium source, a boron source, at least one nitrogen source and at least one carbon source, in which the carbon source includes an alkane having at least two carbon atoms, an alkene or an alkyne. A cutting tool includes a substrate to which a TiCNB hard material layer has been applied, in which a ratio of carbon atoms (C) to nitrogen atoms (N) in the TiCxNyB1-x-y system deposited on the substrate is 0.70≦X≦1.0, preferably 0.75≦X≦0.85, and a polished section through the substrate and the hard material layer is substantially free of an eta phase following Murakami etching.
摘要翻译：用于在基板上制造硬质材料层的工艺包括通过化学气相沉积（CVD）从包括钛源，硼源，至少一个氮源和至少一个碳源的气体系统沉积TiCNB硬质材料层，其中碳源包括具有至少两个碳原子的烷烃，烯烃或炔烃。切削工具包括其中涂覆有TiCNB硬质材料层的基板，其中沉积在基板上的TiC x N y B 1-xy体系中的碳原子（C）与氮原子（N）的比例为0.70≤X≤1.0，优选0.75≤X≤0.85，并且通过基板和硬质材料层的抛光部分在Murakami蚀刻之后基本上没有eta相。

8. 发明授权

US08206673B2 Method of preparing boron-nitrogen compounds 有权
标题翻译：硼氮化合物的制备方法
公开(公告)号：US08206673B2
公开(公告)日：2012-06-26
申请号：US12882701
申请日：2010-09-15
申请人： Steven Kaye , Conor Riley
发明人： Steven Kaye , Conor Riley
IPC分类号： C01B35/08
CPC分类号： C01B35/14
摘要： A method of preparing a boron-nitrogen compound includes combining an ammonium salt and an ionic compound in the absence of solvent to form a mixture. The ionic compound includes a cation and an anion. The anion is represented by the general formula B(R1)4−, wherein each R1 is independently selected from the group of hydrogen, alkyl groups, aryl groups, and combinations thereof. The method also includes agitating the mixture in the absence of solvent to form a reaction product, and separating the boron-nitrogen compound from the reaction product.
摘要翻译：制备硼 - 氮化合物的方法包括在不存在溶剂的情况下将铵盐和离子化合物混合以形成混合物。离子化合物包括阳离子和阴离子。阴离子由通式B（R 1）4表示，其中每个R 1独立地选自氢，烷基，芳基及其组合。该方法还包括在不存在溶剂的情况下搅拌混合物以形成反应产物，并将硼氮化合物与反应产物分离。

9. 发明授权

US07938997B2 Preparation of bulk superhard B-C-N nanocomposite compact 有权
标题翻译：本体超硬B-C-N纳米复合材料的制备
公开(公告)号：US07938997B2
公开(公告)日：2011-05-10
申请号：US11529657
申请日：2006-09-27
申请人： Yusheng Zhao , Duanwei He
发明人： Yusheng Zhao , Duanwei He
IPC分类号： C01B35/08
CPC分类号： C04B35/583 , B82Y30/00 , C04B35/6261 , C04B35/62625 , C04B35/645 , C04B2235/386 , C04B2235/422 , C04B2235/425 , C04B2235/5454 , C04B2235/549 , C04B2235/656 , C04B2235/6567 , C04B2235/767 , C04B2235/781 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9661
摘要： Bulk, superhard, B—C—N nanocomposite compacts were prepared by ball milling a mixture of graphite and hexagonal boron nitride, encapsulating the ball-milled mixture at a pressure in a range of from about 15 GPa to about 25 GPa, and sintering the pressurized encapsulated ball-milled mixture at a temperature in a range of from about 1800-2500 K. The product bulk, superhard, nanocomposite compacts were well sintered compacts with nanocrystalline grains of at least one high-pressure phase of B—C—N surrounded by amorphous diamond-like carbon grain boundaries. The bulk compacts had a measured Vicker's hardness in a range of from about 41 GPa to about 68 GPa.
摘要翻译：通过球磨石墨和六方氮化硼的混合物制备块状，超硬，B-C-N纳米复合材料，将球磨的混合物在约15GPa至约25GPa的压力下包封，并烧结加压密封的球磨混合物在约1800-2500K的温度范围内。产品本体，超硬纳米复合体是具有至少一个B-C-N高压相的纳晶晶粒的良好烧结体通过无定形菱形碳晶界。该批量压块具有在约41GPa至约68GPa范围内的测得的维氏硬度。

10. 发明授权

US4810479A Preparation of cubic boron nitride using as a flux a fluoronitride 失效
标题翻译：使用氟化氮作为助熔剂制备立方氮化硼
公开(公告)号：US4810479A
公开(公告)日：1989-03-07
申请号：US38565
申请日：1987-04-15
申请人： Gilles Biardeau , Gerard Demazeau , Michel Pouchard
发明人： Gilles Biardeau , Gerard Demazeau , Michel Pouchard
IPC分类号： B01J3/06 , C01B35/08 , C04B35/5831 , C01B21/064
CPC分类号： C04B35/5831
摘要： A process for producing cubic boron nitride comprises heating at an elevated temperature and under high pressure a source of boron and a source of nitrogen in the presence of a fluoronitride or a source of fluoronitride.
摘要翻译：制备立方氮化硼的方法包括在氟氮化物或氟氮化物源的存在下，在高温和高压下加热硼源和氮源。

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