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1. 发明授权

US11817311B2 Substrate cleaning method and substrate cleaning apparatus 有权
公开(公告)号：US11817311B2
公开(公告)日：2023-11-14
申请号：US16783546
申请日：2020-02-06
申请人： EBARA CORPORATION
发明人： Tomoatsu Ishibashi , Hiroshi Ishikawa , Masumi Nishijima
IPC分类号： H01L21/02 , H01L21/67 , B08B1/04
CPC分类号： H01L21/02087 , B08B1/04 , H01L21/02096 , H01L21/67046
摘要： According to one embodiment of the present disclosure, provided is a substrate cleaning method that performs an operation, in a state where a cleaning member is in contact with a rotating substrate, the cleaning member is moved between a first position on the substrate and a second position close to an edge of the substrate, n times (n is an integer of 2 or more), wherein a controller, which controls a driver that moves the cleaning member, controls the driver to perform an edge cleaning step to perform cleaning of the substrate in a state where the cleaning member is in contact with the second position on the substrate for a predetermined period of time after the cleaning member reaches the second position at least in one operation of the first to the (n-1)th operations.

2. 发明申请

US20180200764A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND RECORDING MEDIUM 审中-公开
公开(公告)号：US20180200764A1
公开(公告)日：2018-07-19
申请号：US15871265
申请日：2018-01-15
申请人： Tokyo Electron Limited
发明人： Shogo Fukui , Noritaka Uchida , Takanori Obaru , Hidetaka Shinohara , Shuuichi Nishikido , Tomohito Ura , Yuya Motoyama
IPC分类号： B08B17/02 , H01L21/687 , H01L21/67 , H01L21/02 , B08B1/00 , B08B1/02 , B08B3/04 , B08B5/02 , B08B7/04
CPC分类号： B08B17/025 , B08B1/002 , B08B1/02 , B08B3/041 , B08B3/08 , B08B5/023 , B08B7/04 , F26B3/04 , F26B5/08 , F26B21/14 , H01L21/02043 , H01L21/02052 , H01L21/02096 , H01L21/67017 , H01L21/67046 , H01L21/67051 , H01L21/67173 , H01L21/67253 , H01L21/68728 , H01L21/68735 , H01L21/68764 , H01L21/68785 , H01L21/68792
摘要： Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a processing liquid supply device 71.

3. 发明申请

US20180090347A1 SUBSTRATE CLEANING APPARATUS AND SUBSTRATE PROCESSING APPARATUS X 审中-公开
公开(公告)号：US20180090347A1
公开(公告)日：2018-03-29
申请号：US15715847
申请日：2017-09-26
申请人： EBARA CORPORATION
发明人： Yoshitaka KITAGAWA , Hisajiro NAKANO , Junji KUNISAWA
IPC分类号： H01L21/67 , H01L21/02 , B08B1/04
CPC分类号： H01L21/67092 , A46B13/02 , B08B1/04 , H01L21/02096 , H01L21/6704 , H01L21/67046 , H01L21/67219 , H01L21/67253
摘要： A substrate cleaning apparatus for bringing an elongated roll cleaning member into sliding contact with a flat plate type substrate to perform cleaning processing on the substrate includes a roll holder for supporting the roil cleaning member so that the roll cleaning member is rotatable, an elevating mechanism that has a linking member for supporting the roll holder, and moves the roll holder up and down so that the roll cleaning member applies a predetermined roll load to the substrate, a sensor member that is provided to the linking member and measures frictional force between the roll cleaning member and the substrate, and a controller for performing feedback control on the frictional force between the roll cleaning member and the substrate based on a measured value of the sensor member.

4. 发明授权

US09559021B2 Wafer back-side polishing system and method for integrated circuit device manufacturing processes 有权
标题翻译：晶圆背面抛光系统及集成电路元件制造工艺的方法
公开(公告)号：US09559021B2
公开(公告)日：2017-01-31
申请号：US15060807
申请日：2016-03-04
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Shen-Nan Lee , Teng-Chun Tsai , Hsin-Hsien Lu , Chang-Sheng Lin , Kuo-Cheng Lien , Kuo-Yin Lin , Wen-Kuei Liu , Yu-Wei Chou
IPC分类号： H01L21/66 , H01L21/02 , H01L21/306 , B24B9/06 , B24B7/22 , B24B21/00
CPC分类号： H01L21/0209 , B24B7/228 , B24B9/065 , B24B21/002 , H01L21/02043 , H01L21/02057 , H01L21/02087 , H01L21/02096 , H01L21/30625 , H01L21/67092 , H01L21/67288 , H01L22/12 , H01L22/20
摘要： A wafer polishing process includes polishing a central area on the back side of a wafer, polishing a peripheral area on the back side of the wafer, buffing the central area, and buffing the peripheral area. The process can significantly reduce scratch-related wafer breakage, can correct focus spots on wafers, and can replace cleaning processes that use chemical etchants. Polishing and buffing can include polishing and buffing the bevel region. Further improvements include polishing with abrasive pads having a soft backing, polishing or buffing with pads having relatively soft abrasive particles, polishing or buffing with abrasive pads made from abrasive particles that have been sorted and selected for regularity of shape, irrigating the surface being polished or buffed with an aqueous solution that includes a friction-reducing agent, and buffing with abrasive pads having 20k or finer grit or non-abrasive pads.
摘要翻译：晶片抛光工艺包括抛光晶片背面的中心区域，抛光晶片背面的周边区域，抛光中心区域，以及抛光周边区域。该过程可以显着减少划痕相关的晶片断裂，可以校正晶片上的焦点，并可以替代使用化学蚀刻剂的清洗工艺。抛光和抛光可以包括抛光和抛光斜面区域。进一步的改进包括用具有柔软背衬的研磨垫，抛光或抛光，具有相对较软的磨料颗粒的垫，抛光或抛光，其中由磨料颗粒制成的研磨垫已被分选并选择成规则形状，冲洗正被抛光的表面用包含减摩剂的水溶液抛光，并用具有20k或更细砂粒或非研磨垫的研磨垫进行抛光。

5. 发明授权

US09553161B2 Mechanism for forming metal gate structure 有权
标题翻译：形成金属栅极结构的机理
公开(公告)号：US09553161B2
公开(公告)日：2017-01-24
申请号：US14746061
申请日：2015-06-22
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chi-Jen Liu , Li-Chieh Wu , Shich-Chang Suen , Liang-Guang Chen
IPC分类号： H01L21/8234 , H01L29/51 , H01L29/423 , H01L29/49 , H01L21/8238 , H01L29/66 , H01L29/78 , H01L21/02 , H01L21/28 , H01L21/285 , H01L21/321 , H01L29/40
CPC分类号： H01L29/517 , H01L21/02068 , H01L21/02096 , H01L21/02244 , H01L21/28079 , H01L21/28088 , H01L21/28229 , H01L21/28518 , H01L21/3212 , H01L21/82345 , H01L21/823456 , H01L21/823842 , H01L29/401 , H01L29/42376 , H01L29/4966 , H01L29/66545 , H01L29/7833 , H01L29/7843
摘要： A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate and forming a metal gate stack including a metal gate electrode over the semiconductor substrate. The method also includes applying an oxidizing solution containing an oxidizing agent over the metal gate electrode to oxidize the metal gate electrode to form a metal oxide layer on the metal gate electrode.
摘要翻译：提供一种形成半导体器件的方法。该方法包括提供半导体衬底并在半导体衬底上形成包括金属栅电极的金属栅叠层。该方法还包括在金属栅电极上施加含有氧化剂的氧化溶液以氧化金属栅电极，以在金属栅电极上形成金属氧化物层。

6. 发明授权

US09076766B2 Mechanism for forming metal gate structure 有权
标题翻译：形成金属栅极结构的机理
公开(公告)号：US09076766B2
公开(公告)日：2015-07-07
申请号：US13917145
申请日：2013-06-13
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chi-Jen Liu , Li-Chieh Wu , Shich-Chang Suen , Liang-Guang Chen
IPC分类号： H01L21/8234 , H01L21/8238 , H01L29/423 , H01L29/49
CPC分类号： H01L29/517 , H01L21/02068 , H01L21/02096 , H01L21/02244 , H01L21/28079 , H01L21/28088 , H01L21/28229 , H01L21/28518 , H01L21/3212 , H01L21/82345 , H01L21/823456 , H01L21/823842 , H01L29/401 , H01L29/42376 , H01L29/4966 , H01L29/66545 , H01L29/7833 , H01L29/7843
摘要： Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a metal gate stack formed on the semiconductor substrate, and the metal gate stack includes a metal gate electrode. The semiconductor device also includes a metal oxide layer formed over the metal gate stack and in direct contact with the metal gate electrode, and a thickness of the metal oxide layer is in a range from about 15 Å to about 40 Å. The metal oxide layer has a first portion made of an oxidized material of the metal gate electrode and has a second portion made of a material different from that of the first portion.
摘要翻译：提供了用于形成半导体器件的机构的实施例。半导体器件包括在半导体衬底上形成有金属栅堆叠的半导体衬底，并且金属栅叠层包括金属栅电极。半导体器件还包括形成在金属栅叠层上并与金属栅电极直接接触的金属氧化物层，并且金属氧化物层的厚度在大约至大约的范围内。金属氧化物层具有由金属栅电极的氧化材料制成的第一部分，并且具有由不同于第一部分的材料制成的第二部分。

7. 发明申请

US20150107619A1 WAFER PARTICLE REMOVAL 审中-公开
标题翻译：清除颗粒物
公开(公告)号：US20150107619A1
公开(公告)日：2015-04-23
申请号：US14059713
申请日：2013-10-22
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Jiann Lih Wu , He Hui Peng , Jeng-Jyi Hwang , Chi-Ming Yang
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02087 , H01L21/02057 , H01L21/02096 , H01L21/67046 , H01L21/67051
摘要： Among other things, one or more techniques or systems for particle removal from a semiconductor wafer are provided. Particles, contaminating a semiconductor wafer, have the potential to cause defects, such as scratches into a surface of the semiconductor wafer during chemical mechanical polishing or defocusing during a subsequent lithography stage, for the semiconductor wafer. Accordingly, a mechanic particle cleaner component, such as at least one of a sliver brush roller, a pencil brush, a tape polish, a sonic jet, or a liquid spray component, is configured to apply a mechanical force to an edge region of the semiconductor wafer to detach particles. A chemical particle cleaner component is configured to apply a chemical force to the edge region to detach particles. In this way, particles are removed from the semiconductor wafer before or after chemical mechanical polishing.
摘要翻译：除其他之外，提供了一种或多种用于从半导体晶片去除颗粒的技术或系统。污染半导体晶片的颗粒具有在半导体晶片的后续光刻阶段期间的化学机械抛光或散焦期间划痕到半导体晶片的表面的缺陷的可能性。因此，诸如条子刷辊，铅笔刷，带抛光剂，声波喷射或液体喷射部件中的至少一种的机械颗粒清洁器部件被构造成将机械力施加到半导体晶片分离颗粒。化学颗粒清洁剂组件被配置为向边缘区域施加化学力以分离颗粒。以这种方式，在化学机械抛光之前或之后，从半导体晶片去除颗粒。

8. 发明申请

US20140367801A1 MECHANISM FOR FORMING METAL GATE STRUCTURE 有权
标题翻译：形成金属结构结构的机理
公开(公告)号：US20140367801A1
公开(公告)日：2014-12-18
申请号：US13917145
申请日：2013-06-13
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chi-Jen LIU , Li-Chieh WU , Shich-Chang SUEN , Liang-Guang CHEN
IPC分类号： H01L29/423 , H01L29/49
CPC分类号： H01L29/517 , H01L21/02068 , H01L21/02096 , H01L21/02244 , H01L21/28079 , H01L21/28088 , H01L21/28229 , H01L21/28518 , H01L21/3212 , H01L21/82345 , H01L21/823456 , H01L21/823842 , H01L29/401 , H01L29/42376 , H01L29/4966 , H01L29/66545 , H01L29/7833 , H01L29/7843
摘要： Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a metal gate stack formed on the semiconductor substrate, and the metal gate stack includes a metal gate electrode. The semiconductor device also includes a metal oxide layer formed over the metal gate stack and in direct contact with the metal gate electrode, and a thickness of the metal oxide layer is in a range from about 15 Å to about 40 Å. The metal oxide layer has a first portion made of an oxidized material of the metal gate electrode and has a second portion made of a material different from that of the first portion.
摘要翻译：提供了用于形成半导体器件的机构的实施例。半导体器件包括在半导体衬底上形成有金属栅堆叠的半导体衬底，并且金属栅叠层包括金属栅电极。半导体器件还包括形成在金属栅叠层上并与金属栅电极直接接触的金属氧化物层，并且金属氧化物层的厚度在大约至大约的范围内。金属氧化物层具有由金属栅电极的氧化材料制成的第一部分，并且具有由不同于第一部分的材料制成的第二部分。

9. 发明申请

US20140283320A1 CONICAL SPONGE BRUSH FOR CLEANING SEMICONDUCTOR WAFERS 有权
标题翻译：用于清洁半导体波形的锥形海绵刷
公开(公告)号：US20140283320A1
公开(公告)日：2014-09-25
申请号：US14297341
申请日：2014-06-05
申请人： Illinois Tool Works Inc.
发明人： Jeffrey J. Tyrrell , Bradley S. Withers
IPC分类号： A46B9/08
CPC分类号： A46B9/08 , A46B7/04 , A46B13/00 , B08B1/04 , B08B11/00 , H01L21/02096 , H01L21/67046
摘要： A cleaning device for cleaning a substrate is provided. In one aspect, the cleaning device includes a brush including a first end, a second end opposed to the first end, an outer surface, and a hollow bore defined in the brush about a central axis of the brush. The brush defines a first cross-sectional area near the first end and a second cross-sectional area near the second end. Both the first and second cross-sectional areas are generally perpendicular to the central axis and the second cross-sectional area is greater than the first cross-sectional area.
摘要翻译：提供了一种用于清洁基板的清洁装置。在一个方面，清洁装置包括刷子，该刷子包括第一端，与第一端相对的第二端，外表面和围绕刷的中心轴限定在刷中的中空孔。刷子限定靠近第一端的第一横截面区域和靠近第二端部的第二横截面区域。第一和第二横截面面积通常垂直于中心轴线，第二横截面面积大于第一横截面面积。

10. 发明申请

US20140059789A1 Apparatus for Cleaning a Semiconductor Substrate 审中-公开
标题翻译：用于清洁半导体衬底的装置
公开(公告)号：US20140059789A1
公开(公告)日：2014-03-06
申请号：US14055850
申请日：2013-10-16
申请人： Lam Research Corporation
发明人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： H01L21/67 , H01L21/02
CPC分类号： H01L21/67092 , B08B3/00 , B08B7/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02096 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086 , Y10T137/4891
摘要： An apparatus for processing a substrate is provided. The apparatus includes a solid material having a support side and a contact side. The contact side has an outer surface, and the outer surface is configured to become softer relative to a remainder of the solid material when exposed to an activation solution. The apparatus includes a support structure configured to support the solid material from the support side of the solid material, such that the contact side of the solid material is oriented to face a surface of the substrate, when the substrate is present. Also provided is a gimbaled structure connected to the support structure. The gimbaled structure enabling the outer surface of the contact side to substantially align in a coplanar arrangement with the surface of the substrate, when the substrate is present. A force application structure is coupled to the gimbaled structure. The force application structure is configured for moving the solid material toward and away from the surface of the substrate, when the substrate is present, and further configured for applying a force that presses the outer surface of the solid material against the surface of the substrate, when the substrate is present.
摘要翻译：提供了一种用于处理衬底的设备。该装置包括具有支撑侧和接触侧的固体材料。接触侧具有外表面，并且当暴露于活化溶液时，外表面相对于固体材料的其余部分变得较软。该装置包括支撑结构，其构造成从固体材料的支撑侧支撑固体材料，使得当存在基板时，固体材料的接触侧面向基板的表面。还提供了连接到支撑结构的万向结构。当存在基板时，能够使接触侧的外表面基本上与基板的表面共面配置的万向结构。力施加结构耦合到万向结构。力施加结构构造成用于当固体材料存在时朝向和远离基材的表面移动固体材料，并且进一步构造成施加将固体材料的外表面压靠在基材表面上的力，当存在基板时。

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