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1. 发明申请

US20050219451A1 Semitransmissive liquid crystal display device and manufacturing method thereof 有权
标题翻译：半透射型液晶显示装置及其制造方法
公开(公告)号：US20050219451A1
公开(公告)日：2005-10-06
申请号：US11093223
申请日：2005-03-30
申请人： Yuichi Masutani , Shingo Nagano , Takkuji Yoshida , Nobuaki Ishiga , Kazunori Inoue
发明人： Yuichi Masutani , Shingo Nagano , Takkuji Yoshida , Nobuaki Ishiga , Kazunori Inoue
IPC分类号： G02F1/1335 , G02F1/1343 , G02F1/1362 , G02F1/1368
CPC分类号： G02F1/13458 , G02F1/133555 , G02F1/13439 , G02F1/136227
摘要： The present invention intends to provide a manufacturing method of a semi-transmissive liquid crystal display device in which method a structure and manufacturing process thereof are simplified to enable to reduce the manufacturing cost. In order to achieve the above object, a semi-transmissive liquid crystal display device in the invention has a layer constitution in which a reflective pixel electrode is formed with a second conductive film that constitutes a source electrode, a drain electrode, a source wiring and so on and on an upper layer of the second metal film a transmissive pixel electrode made of a transparent conductive film is formed through the insulating film. A TFT array substrate can be formed through 5 times of photoengraving process.
摘要翻译：本发明旨在提供一种半透射型液晶显示装置的制造方法，其中简化了其结构和制造方法的方法，从而能够降低制造成本。为了实现上述目的，本发明的半透射型液晶显示装置具有：反射像素电极形成有构成源电极，漏电极，源极配线的第二导电膜的层结构，因此在第二金属膜的上层上，通过绝缘膜形成由透明导电膜构成的透射性像素电极。可以通过5倍的光刻工艺形成TFT阵列基板。

2. 发明授权

US07733446B2 Semitransmissive liquid crystal display device and manufacturing method thereof 有权
标题翻译：半透射型液晶显示装置及其制造方法
公开(公告)号：US07733446B2
公开(公告)日：2010-06-08
申请号：US11093223
申请日：2005-03-30
申请人： Yuichi Masutani , Shingo Nagano , Takuji Yoshida , Nobuaki Ishiga , Kazunori Inoue
发明人： Yuichi Masutani , Shingo Nagano , Takuji Yoshida , Nobuaki Ishiga , Kazunori Inoue
IPC分类号： G02F1/136 , G02F1/1335
CPC分类号： G02F1/13458 , G02F1/133555 , G02F1/13439 , G02F1/136227
摘要： The present invention intends to provide a manufacturing method of a semi-transmissive liquid crystal display device in which method a structure and manufacturing process thereof are simplified to enable to reduce the manufacturing cost. In order to achieve the above object, a semi-transmissive liquid crystal display device in the invention has a layer constitution in which a reflective pixel electrode is formed with a second conductive film that constitutes a source electrode, a drain electrode, a source wiring and so on and on an upper layer of the second metal film a transmissive pixel electrode made of a transparent conductive film is formed through the insulating film. A TFT array substrate can be formed through 5 times of photoengraving process.
摘要翻译：本发明旨在提供一种半透射型液晶显示装置的制造方法，其中简化了其结构和制造方法的方法，从而能够降低制造成本。为了实现上述目的，本发明的半透射型液晶显示装置具有：反射像素电极形成有构成源电极，漏电极，源极配线的第二导电膜的层结构，因此在第二金属膜的上层上，通过绝缘膜形成由透明导电膜构成的透射性像素电极。可以通过5倍的光刻工艺形成TFT阵列基板。

3. 发明授权

US07470571B2 Thin film transistor array substrate and method of producing the same 有权
公开(公告)号：US07470571B2
公开(公告)日：2008-12-30
申请号：US11951832
申请日：2007-12-06
申请人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
发明人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
IPC分类号： H01L21/00
CPC分类号： G02F1/136227 , G02F1/133555 , G02F2001/136236 , H01L21/32139 , H01L27/124
摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

4. 发明授权

US07323713B2 Thin film transistor array substrate and method of producing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07323713B2
公开(公告)日：2008-01-29
申请号：US11189980
申请日：2005-07-27
申请人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
发明人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F1/133555 , G02F2001/136236 , H01L21/32139 , H01L27/124
摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.
摘要翻译：一种制造薄膜晶体管阵列基板的方法，该薄膜晶体管阵列基板包括绝缘基板，具有连接到漏电极的像素电极的显示像素，栅极布线和垂直于栅极布线的源极布线，包括形成第一薄金属多其上层包括铝，并铺展光致抗蚀剂，在与第二薄金属膜连接的区域中形成光刻胶的厚度小于其它区域，图案化第一薄金属膜，减少去除该区域中的光致抗蚀剂，去除该区域中的上层以暴露下层，形成层间绝缘膜并将其图案化以暴露该区域中的下层，并将该图案化第二薄金属膜包括该区域，以将下层连接到第二薄金属膜。

5. 发明申请

US20060022199A1 Thin film transistor array substrate and method of producing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20060022199A1
公开(公告)日：2006-02-02
申请号：US11189980
申请日：2005-07-27
申请人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
发明人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F1/133555 , G02F2001/136236 , H01L21/32139 , H01L27/124
摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.
摘要翻译：一种制造薄膜晶体管阵列基板的方法，该薄膜晶体管阵列基板包括绝缘基板，具有连接到漏电极的像素电极的显示像素，栅极布线和垂直于栅极布线的源极布线，包括形成第一薄金属多其上层包括铝，并铺展光致抗蚀剂，在与第二薄金属膜连接的区域中形成光刻胶的厚度小于其它区域，图案化第一薄金属膜，减少去除该区域中的光致抗蚀剂，去除该区域中的上层以暴露下层，形成层间绝缘膜并将其图案化以暴露该区域中的下层，并将该图案化第二薄金属膜包括该区域，以将下层连接到第二薄金属膜。

6. 发明申请

US20080118996A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20080118996A1
公开(公告)日：2008-05-22
申请号：US11951832
申请日：2007-12-06
申请人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
发明人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
IPC分类号： H01L21/28
CPC分类号： G02F1/136227 , G02F1/133555 , G02F2001/136236 , H01L21/32139 , H01L27/124
摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.
摘要翻译：一种制造薄膜晶体管阵列基板的方法，该薄膜晶体管阵列基板包括绝缘基板，具有连接到漏电极的像素电极的显示像素，栅极布线和垂直于栅极布线的源极布线，包括形成第一薄金属多其上层包括铝，并铺展光致抗蚀剂，在与第二薄金属膜连接的区域中形成光刻胶的厚度小于其它区域，图案化第一薄金属膜，减少去除该区域中的光致抗蚀剂，去除该区域中的上层以暴露下层，形成层间绝缘膜并将其图案化以暴露该区域中的下层，并将该图案化第二薄金属膜包括该区域，以将下层连接到第二薄金属膜。

7. 发明授权

US08248564B2 Liquid crystal display device and method of manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08248564B2
公开(公告)日：2012-08-21
申请号：US12401226
申请日：2009-03-10
申请人： Shingo Nagano , Osamu Miyakawa , Nobuaki Ishiga
发明人： Shingo Nagano , Osamu Miyakawa , Nobuaki Ishiga
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , H01L27/124
摘要： A liquid crystal display device includes a gate line placed above a substrate, a gate insulating layer to cover the gate line, a source line placed above the gate insulating layer, an interlayer insulating layer to cover the source line, a comb-shaped or slit-shaped pixel electrode electrically connected a drain electrode of a TFT through a contact hole penetrating the interlayer insulating layer, a first counter electrode placed below and opposite to the pixel electrode with an insulating layer interposed therebetween to generate an oblique electric field with the pixel electrode, and a second counter electrode formed in the same layer as the pixel electrode and placed overlapping the source line in a given area to generate an in-plane electric field with the pixel electrode.
摘要翻译：液晶显示装置包括位于基板上方的栅极线，覆盖栅极线的栅极绝缘层，栅极绝缘层上方的源极线，覆盖源极线的层间绝缘层，梳状或狭缝形状的像素电极通过穿过层间绝缘层的接触孔电连接TFT的漏电极，第一对置电极放置在像素电极的下方并与其相对的绝缘层上，以产生与像素电极以及形成在与像素电极相同的层中并且在给定区域中与源极重叠的第二对电极以与像素电极产生面内电场。

8. 发明授权

US08031283B2 Active matrix substrate and method of manufacturing the same 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US08031283B2
公开(公告)日：2011-10-04
申请号：US12353480
申请日：2009-01-14
申请人： Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
发明人： Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F2201/123
摘要： An active matrix substrate according to one aspect of the present invention is a TFT array substrate including a TFT. The active matrix substrate includes a gate signal line electrically connected to a gate electrode of the TFT, a first insulating film formed above the gate signal line, an auxiliary capacitance electrode formed above the first insulating film and supplied with a common potential, a second insulating film formed above the auxiliary capacitance electrode, a source signal line formed above the second insulating film and electrically connected to a source electrode of the TFT, a third insulating film formed above the source signal line, and a pixel electrode formed above the third insulating film so that the pixel electrode overlaps with a part of the auxiliary capacitance electrode.
摘要翻译：根据本发明的一个方面的有源矩阵基板是包括TFT的TFT阵列基板。有源矩阵基板包括电连接到TFT的栅电极的栅极信号线，形成在栅极信号线上方的第一绝缘膜，形成在第一绝缘膜上方并被提供公共电位的辅助电容电极，第二绝缘形成在辅助电容电极上的膜，形成在第二绝缘膜上方并与TFT的源电极电连接的源极信号线，形成在源极信号线上方的第三绝缘膜，以及形成在第三绝缘膜上方的像素电极使得像素电极与辅助电容电极的一部分重叠。

9. 发明申请

US20090230401A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20090230401A1
公开(公告)日：2009-09-17
申请号：US12401226
申请日：2009-03-10
申请人： Shingo NAGANO , Osamu Miyakawa , Nobuaki Ishiga
发明人： Shingo NAGANO , Osamu Miyakawa , Nobuaki Ishiga
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： G02F1/134363 , H01L27/124
摘要： A liquid crystal display device includes a gate line placed above a substrate, a gate insulating layer to cover the gate line, a source line placed above the gate insulating layer, an interlayer insulating layer to cover the source line, a comb-shaped or slit-shaped pixel electrode electrically connected a drain electrode of a TFT through a contact hole penetrating the interlayer insulating layer, a first counter electrode placed below and opposite to the pixel electrode with an insulating layer interposed therebetween to generate an oblique electric field with the pixel electrode, and a second counter electrode formed in the same layer as the pixel electrode and placed overlapping the source line in a given area to generate an in-plane electric field with the pixel electrode.
摘要翻译：液晶显示装置包括位于基板上方的栅极线，覆盖栅极线的栅极绝缘层，栅极绝缘层上方的源极线，覆盖源极线的层间绝缘层，梳状或狭缝形状的像素电极通过穿过层间绝缘层的接触孔电连接TFT的漏电极，第一对置电极放置在像素电极的下方并与其相对的绝缘层上，以产生与像素电极的倾斜电场以及形成在与像素电极相同的层中并且在给定区域中与源极重叠的第二对电极以与像素电极产生面内电场。

10. 发明申请

US20090195723A1 ACTIVE MATRIX SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：主动矩阵基板及其制造方法
公开(公告)号：US20090195723A1
公开(公告)日：2009-08-06
申请号：US12353480
申请日：2009-01-14
申请人： Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
发明人： Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
IPC分类号： G02F1/136 , H01L29/04 , H01L21/84 , H01L29/68 , H01L21/04
CPC分类号： G02F1/1362 , G02F2201/123
摘要： An active matrix substrate according to one aspect of the present invention is a TFT array substrate including a TFT. The active matrix substrate includes a gate signal line electrically connected to a gate electrode of the TFT, a first insulating film formed above the gate signal line, an auxiliary capacitance electrode formed above the first insulating film and supplied with a common potential, a second insulating film formed above the auxiliary capacitance electrode, a source signal line formed above the second insulating film and electrically connected to a source electrode of the TFT, a third insulating film formed above the source signal line, and a pixel electrode formed above the third insulating film so that the pixel electrode overlaps with a part of the auxiliary capacitance electrode.
摘要翻译：根据本发明的一个方面的有源矩阵基板是包括TFT的TFT阵列基板。有源矩阵基板包括电连接到TFT的栅电极的栅极信号线，形成在栅极信号线上方的第一绝缘膜，形成在第一绝缘膜上方并被提供公共电位的辅助电容电极，第二绝缘形成在辅助电容电极上的膜，形成在第二绝缘膜上方并与TFT的源电极电连接的源极信号线，形成在源极信号线上方的第三绝缘膜，以及形成在第三绝缘膜上方的像素电极使得像素电极与辅助电容电极的一部分重叠。

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