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    • 4. 发明授权
    • Solid-state image pickup device with discharge gate operable in an arbitrary timing
    • 具有放电门的固态图像拾取装置可在任意定时操作
    • US07053948B2
    • 2006-05-30
    • US09777314
    • 2001-02-05
    • Tomohiro Konishi
    • Tomohiro Konishi
    • H04N3/14H04N5/335
    • H01L27/14843H04N5/3456H04N5/3728
    • A solid-state image pickup device has a discharge gate and a discharge drain provided adjacent to a connection of a vertical CCD and a horizontal CCD so that charges accumulated for an arbitrary pixel can be completely depleted. Data can be read at an arbitrary decimation rate only by changing a drive condition of the discharge gate. An arbitrary decimation rate can be achieved and a frame rate, resolution or the like can easily changed while vertical transfer electrodes can keep the same wiring structure as in a still mode (normal reading) without making a complicated wiring structure of vertical transfer electrodes such as the prior art. Therefore, this solid-state image pickup device can achieve an arbitrary decimation rate and easily change a frame rate, resolution or the like only by changing drive conditions without making a complicated wiring structure of vertical transfer electrodes.
    • 固态摄像装置具有与垂直CCD和水平CCD的连接相邻设置的放电栅极和放电漏极,从而可以完全耗尽累积任意像素的电荷。 只有通过改变放电门的驱动条件,才能以任意的抽取率读取数据。 可以实现任意的抽取率,并且可以容易地改变帧率,分辨率等,而垂直传输电极可以保持与静止模式(正常读取)相同的布线结构,而不会形成垂直传输电极的复杂的布线结构,例如 现有技术 因此,该固体摄像装置可以通过改变驱动条件而不会产生垂直传输电极的复杂的布线结构,而能够实现任意的抽取率并容易地改变帧率,分辨率等。
    • 8. 发明申请
    • SOLID-STATE IMAGE CAPTURING DEVICE, METHOD FOR MANUFACTURING THE SAME AND ELECTRONIC INFORMATION DEVICE
    • 固态图像捕获装置,其制造方法和电子信息装置
    • US20100020215A1
    • 2010-01-28
    • US11992668
    • 2006-09-08
    • Tomohiro Konishi
    • Tomohiro Konishi
    • H04N5/335
    • H01L27/14603H01L27/14605H01L27/14623H01L27/14627H01L27/14636H01L27/14643
    • A decrease in a light receiving sensitivity at a peripheral portion of an image capturing area is suppressed, thereby obtaining a solid-state image capturing device with an excellent luminance shading characteristic. In a solid-state image capturing device in which an image capturing area 1 is structured having a plurality of light receiving sections 12 arranged at a top portion of a semiconductor substrate 11 in a two-dimensional array; metal wirings 14 and 15 of a plurality of layers of wirings is provided to avoid areas above the light receiving sections 12; and the plurality of layers of wirings are connected to via contact sections, a position of each metal wiring 15 of the uppermost layer and each via contact 16 relative to a unit pixel (light receiving section 12) is designed offset so as to be closer to the center of the image capturing area 1 as an observed portion of the image capturing area 1 moves from a central portion 2 toward peripheral portions 3 and 4 of the image capturing area 1. A position of each metal wiring 15 of an uppermost layer relative to a unit pixel is arranged offset so as to be closer to the center of the image capturing area 1 as an observed portion of the image capturing area moves from the central portion 2 toward the peripheral portions 3 and 4 of the image capturing area 1, without changing a wiring width of the metal wiring 15 of the uppermost layer and without a wiring width a corresponding metal wiring 14 of a lower layer.
    • 抑制图像拍摄区域的周边部分的光接收灵敏度的降低,从而获得具有优异的亮度阴影特性的固态图像捕获装置。 在其中构成图像捕获区域1的固态图像捕获装置中,其具有以二维阵列布置在半导体基板11的顶部的多个光接收部分12; 提供多层布线的金属布线14和15以避免光接收部分12上方的区域; 并且多个布线层连接到经由接触部分,最上层的每个金属布线15和每个通孔接触件16相对于单位像素(光接收部分12)的位置被设计为偏移以便更接近 作为图像拍摄区域1的观察部分的图像拍摄区域1的中心从中心部分2朝向图像捕获区域1的周边部分3和4移动。最上层的每个金属布线15相对于 随着摄像区域的观察部分从中央部分2朝向图像拍摄区域1的周边部分3和4移动,单位像素偏移地布置成更靠近图像拍摄区域1的中心,而没有 改变最上层的金属布线15的布线宽度,而不需要布线宽度相应的下层的金属布线14。
    • 10. 发明授权
    • Solid-state image pickup device
    • 固态图像拾取装置
    • US07173298B2
    • 2007-02-06
    • US11065758
    • 2005-02-24
    • Tomohiro Konishi
    • Tomohiro Konishi
    • H01L31/062H01L31/113
    • H04N5/372H01L27/14812H04N5/3456
    • An imaging area is provided on a surface of a semiconductor substrate, and light-receiving portions and transfer channels are provided in the imaging area. A group of transfer electrodes extends in a direction crossing the transfer channels on the imaging area. A group of transfer signal lines, which are provided for every transfer signal of each phase along the periphery of the imaging area on the semiconductor substrate, is included. A transfer signal line connected to a transfer electrode having a large surface area on the transfer channel, of the group of the transfer electrodes, has an electrical resistance smaller than that of a transfer signal line connected to a transfer electrode having a small surface area on the transfer channel in the group of the transfer electrodes.
    • 在半导体衬底的表面上设置成像区域,并且在成像区域中设置有光接收部分和传送通道。 一组转移电极沿与成像区域上的输送通道交叉的方向延伸。 包括沿着半导体衬底上的成像区域的周边的每相的每个传送信号提供的一组传送信号线。 连接到转印电极组的传输通道上具有大的表面积的转印电极的转印信号线的电阻小于与表面积小的转印电极连接的转印信号线的电阻 转移电极组中的转移通道。