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1. 发明授权

US5825789A Process for producing a resonator in a semiconductor laser device 失效
标题翻译：在半导体激光装置中制造谐振器的方法
公开(公告)号：US5825789A
公开(公告)日：1998-10-20
申请号：US577620
申请日：1995-12-22
申请人： Yoshiaki Watanabe , Satoshi Miyaguchi , Hiroshi Amano , Isamu Akasaki
发明人： Yoshiaki Watanabe , Satoshi Miyaguchi , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01S5/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/323 , H01S3/10 , H01S3/083
CPC分类号： H01S5/0201 , H01S5/028
摘要： A method for forming a resonator in a semiconductor laser device comprises the steps of; filling with a resin a gap surrounding the side surfaces of the waveguide for a resonator other than the end-surface to be polished; polishing the end-surface and the resin surrounding it; forming a predetermined optical coating on the polished end-surface and the resin in the state of the laser waveguide and the electrode being embedded; and removing the embedding resin. Both the bending of polished end-surfaces and the entering of the thin film into the side surface of the laser waveguide is prevented so that a high smooth end-surface of mirror coating for resonator is achieved. Furthermore, any crystals are used for a substrate carrying a semiconductor laser structure with a resonator even if that crystal is of non-cleavage, according to that method.
摘要翻译：一种在半导体激光器件中形成谐振器的方法包括以下步骤：用树脂填充围绕波导的侧表面的间隙，用于除了待抛光的端面之外的谐振器; 抛光端面和周围的树脂; 在激光波导和电极嵌入的状态下在抛光的端面上形成预定的光学涂层和树脂; 并除去嵌入树脂。抛光端面的弯曲和薄膜进入激光波导的侧表面均被防止，从而实现了用于谐振器的镜面涂层的高光滑端面。此外，根据该方法，任何晶体都用于携带具有谐振器的半导体激光器结构的衬底，即使该晶体是非分裂的。

2. 发明申请

US20130330913A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130330913A1
公开(公告)日：2013-12-12
申请号：US14001454
申请日：2011-02-25
申请人： Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
发明人： Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L21/02
CPC分类号： H01L21/02365 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L2224/16225
摘要： A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.
摘要翻译：一种结构包括基板，形成在基板的表面上并包括AlN层的模板层，以及通过在模板层上堆叠AlGaN半导体层而形成的器件结构部分。对于该结构，通过激光通过基板的激光的激光和激光被AlN层吸收，AlN层从靠近基板的一侧照射，其中AlN 层从基底接收压应力。这允许AlN层在AlN层和衬底之间的至少一个界面上比衬底的表面更多地膨胀，以便增加压缩应力，以便从AlN层去除衬底。

3. 发明申请

US20080277670A1 SiC crystal and semiconductor device 有权
标题翻译： SiC晶体和半导体器件
公开(公告)号：US20080277670A1
公开(公告)日：2008-11-13
申请号：US12152016
申请日：2008-05-12
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
IPC分类号： H01L33/00
CPC分类号： B23K35/262 , C22C13/00 , H01B1/026
摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
摘要翻译：本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

4. 发明授权

US07297989B2 Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
标题翻译：二硼化物单晶基板，使用这种半导体器件及其制造方法
公开(公告)号：US07297989B2
公开(公告)日：2007-11-20
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译：公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。允许衬底1容易地沿着（10-10）平面4进行切割和分割。使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。还实现了消除切割余量的制造方法。

5. 发明申请

US20070145557A1 Method for fabricating a semiconductor device and semiconductor device 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20070145557A1
公开(公告)日：2007-06-28
申请号：US11710744
申请日：2007-02-26
申请人： Satoshi Kamiyama , Hiroshi Amano , Motoaki Iwaya , Isamu Akasaki , Hideki Kasugai
发明人： Satoshi Kamiyama , Hiroshi Amano , Motoaki Iwaya , Isamu Akasaki , Hideki Kasugai
IPC分类号： H01L23/02
CPC分类号： H01L33/22 , H01L33/38 , H01L2933/0016
摘要： The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.
摘要翻译：本发明公开了一种制造半导体器件的方法，包括：提供半透明部分; 通过气相沉积在半透明部分上形成由一种或多种金属构成的覆盖层; 向覆盖层提供动能以形成周期性掩模; 通过使用周期性掩模在半透明部分上形成周期性结构。

6. 发明申请

US20060043396A1 Sapphire substrate, epitaxial substrate and semiconductor device 审中-公开
标题翻译：蓝宝石衬底，外延衬底和半导体器件
公开(公告)号：US20060043396A1
公开(公告)日：2006-03-02
申请号：US11215406
申请日：2005-08-29
申请人： Michinobu Tsuda , Masataka Imura , Akira Honshio , Motoaki Iwaya , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
发明人： Michinobu Tsuda , Masataka Imura , Akira Honshio , Motoaki Iwaya , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L29/22
CPC分类号： H01L33/32 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/16
摘要： An epitaxial substrate for manufacturing field effect transistor (FET) that has heterojunction structure consisting of at least a channel layer made of gallium nitride or gallium indium nitride and a barrier layer made of aluminum gallium nitride formed successively on the principal plane of the sapphire substrate, wherein the principal plane of the sapphire substrate semiconductor is inclined from (01-12) plane toward (0001) plane by an off-angle α that is in a range of 0°
摘要翻译：一种用于制造场效应晶体管（FET）的外延衬底，其具有至少由氮化镓或氮化铟镓制成的沟道层和由氮化铝镓制成的势垒层在蓝宝石衬底的主面上连续形成的异质结结构，其中所述蓝宝石衬底半导体的主平面从（01-12）面朝向（0001）面倾斜角度α为0°

7. 发明授权

US06229151B1 Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency 有权
标题翻译：具有降低的压电场和提高效率的III-V族III族半导体发光器件
公开(公告)号：US06229151B1
公开(公告)日：2001-05-08
申请号：US09162708
申请日：1998-09-29
申请人： Tetsuya Takeuchi , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
发明人： Tetsuya Takeuchi , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L2906
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01L33/18 , H01L33/24 , H01S5/021 , H01S5/0213 , H01S5/3201 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure. In the preferred embodiment of the present invention, the growth orientation is chosen to minimize the piezoelectric field in the strained quantum well layer.
摘要翻译：一种具有多个GaN基半导体层的光半导体器件，其含有应变量子阱层，其中应变量子阱层具有取决于量子层生长时应变量子阱层的取向的压电场。在本发明中，应变量子阱层以压电场小于压电场强度的最大值作为取向的方向生长。在具有纤锌矿晶体结构的GaN基半导体层的器件中，应变量子阱层的生长方向从纤锌矿晶体结构的{0001}方向倾斜至少1°。在具有锌辉石晶体结构的GaN基半导体层的器件中，应变量子阱层的生长取向从闪锌矿晶体结构的{111}方向倾斜至少1°。在本发明的优选实施例中，选择生长方向以最小化应变量子阱层中的压电场。

8. 发明授权

US08941136B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08941136B2
公开(公告)日：2015-01-27
申请号：US13394543
申请日：2010-08-23
申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Toshiyuki Kondo , Fumiharu Teramae , Tsukasa Kitano , Atsushi Suzuki
发明人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Toshiyuki Kondo , Fumiharu Teramae , Tsukasa Kitano , Atsushi Suzuki
IPC分类号： H01L33/00 , H01L33/22 , H01L33/40
CPC分类号： H01L33/10 , H01L33/007 , H01L33/22 , H01L33/405 , H01L2933/0058
摘要： A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.
摘要翻译：半导体发光元件包括：半导体堆叠部，其包括发光层，从发光层射出的光入射的衍射面，形成在比所述发光层的光波长长的时间内形成的凸部或凹部光并且短于光的相干长度，其中衍射面根据布拉格的衍射条件以多模式反射入射光，并根据布拉格的衍射条件将入射光透射到多模中，并且反射面反射多模光在衍射面衍射并使多模光再次入射到衍射面。半导体堆叠部分形成在衍射面上。

9. 发明申请

US20120228656A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20120228656A1
公开(公告)日：2012-09-13
申请号：US13394543
申请日：2010-08-23
申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Toshiyuki Kondo , Fumiharu Teramae , Tsukasa Kitano , Atsushi Suzuki
发明人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Toshiyuki Kondo , Fumiharu Teramae , Tsukasa Kitano , Atsushi Suzuki
IPC分类号： H01L33/10 , H01L33/00
CPC分类号： H01L33/10 , H01L33/007 , H01L33/22 , H01L33/405 , H01L2933/0058
摘要： [PROBLEM] A light extraction efficiency increases by suppressing a reflection of a semiconductor layer and a transparent substrate.[MEANS FOR SOLVING] A semiconductor light emitting element comprising a semiconductor stack part including a light emitting layer is formed on a main surface of a substrate, a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than optical wavelength of the light and is shorter than coherent length of the light, is formed on a main surface side of the substrate, and a reflective face which reflects light diffracted at the diffractive face and let this light be incident to the diffractive face again is formed on a back surface side of the substrate.
摘要翻译： [问题]通过抑制半导体层和透明基板的反射来提高光提取效率。解决方案包括发光层的半导体堆叠部分的半导体发光元件形成在基板的主表面上，从发光层发射的光入射到该凸部或凹部的衍射面部分形成在比光的光波长长并且短于光的相干长度的周期中，形成在基板的主表面侧上，反射面反射在衍射面衍射的光，并使在基板的背面侧形成有再次入射到衍射面的光。

10. 发明授权

US07756189B2 Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element 有权
标题翻译：双光束干扰曝光装置，双光束干涉曝光方法，半导体发光元件制造方法和半导体发光元件
公开(公告)号：US07756189B2
公开(公告)日：2010-07-13
申请号：US11897895
申请日：2007-08-31
申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
发明人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01S3/08 , H01S5/00 , G01B9/02 , G01B11/02
CPC分类号： G03F7/70408 , G03F7/70025 , H01L33/22 , H01S3/082 , H01S3/109 , H01S3/2207
摘要： The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.
摘要翻译：本发明公开了一种双光束干涉曝光装置，包括：设置在激光谐振器中的激光光源; 设置在所述激光谐振器中的用于将由所述激光源输出的激光转换成高次谐波的单次谐波产生装置; 在激光谐振器中提供的标准具，用作窄带波长滤波器; 分束器将激光谐振器外部的激光输出分成两束光束; 以及使得光束在要暴露的目标上彼此干扰的干涉光学系统。

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