专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070063237A1 Magnetic device having multilayered free ferromagnetic layer 有权
标题翻译：具有多层自由铁磁层的磁性器件
公开(公告)号：US20070063237A1
公开(公告)日：2007-03-22
申请号：US11498294
申请日：2006-08-01
申请人： Yiming Huai , Zhitao Diao , Eugene Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Chen
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。每个自由铁磁层可以包括两层或更多层，并且可以是多层自由铁磁性堆叠，其包括第一和第二铁磁层和第一和第二铁磁层之间的非磁性间隔物。

2. 发明申请

US20070246787A1 On-plug magnetic tunnel junction devices based on spin torque transfer switching 审中-公开
标题翻译：基于自旋转矩转换的插头磁隧道结装置
公开(公告)号：US20070246787A1
公开(公告)日：2007-10-25
申请号：US11394056
申请日：2006-03-29
申请人： Lien-Chang Wang , Eugene Chen , Yiming Huai , Zhitao Diao
发明人： Lien-Chang Wang , Eugene Chen , Yiming Huai , Zhitao Diao
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.
摘要翻译：与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。描述了插头MTJ设计和制造技术。

3. 发明申请

US20070171694A1 Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density 有权
标题翻译：具有降低的自旋转移开关电流密度的电流切换自旋转移磁性器件
公开(公告)号：US20070171694A1
公开(公告)日：2007-07-26
申请号：US11318337
申请日：2005-12-23
申请人： Yiming Huai , Zhitao Diao , Alex Panchula , Eugene Chen , Lien-Chang Wang
发明人： Yiming Huai , Zhitao Diao , Alex Panchula , Eugene Chen , Lien-Chang Wang
IPC分类号： G11C11/22
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.
摘要翻译：诸如磁性或磁阻隧道结（MTJ）和自旋阀的磁性多层结构具有一个或多个自旋扩散层，以将电子自旋扩散到MTJ或自旋阀结构外部，以减少用于切换自由层的自旋转移开关电流。

4. 发明申请

US20070063236A1 Magnetic device having stabilized free ferromagnetic layer 有权
标题翻译：具有稳定的自由铁磁层的磁性装置
公开(公告)号：US20070063236A1
公开(公告)日：2007-03-22
申请号：US11232356
申请日：2005-09-20
申请人： Yiming Huai , Zhitao Diao , Eugene Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Chen
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。

5. 发明申请

US20080310213A1 METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER TUNNELING MAGNETIC MEMORIES UTILIZING NON-PLANAR TRANSISTORS 有权
标题翻译：提供使用非平面晶体管的旋转传输磁性记忆体的方法和系统
公开(公告)号：US20080310213A1
公开(公告)日：2008-12-18
申请号：US11764057
申请日：2007-06-15
申请人： Eugene Chen , Yiming Huai , Alexander A.G. Driskill-Smith
发明人： Eugene Chen , Yiming Huai , Alexander A.G. Driskill-Smith
IPC分类号： G11C11/02 , G11C11/40 , H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L29/785 , H01L29/7853 , H01L29/7854 , Y10S977/935
摘要： A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.
摘要翻译：描述了包含该单元的磁存储单元和磁存储器。磁存储单元包括至少一个磁性元件和至少一个非平面选择装置。磁性元件可通过驱动通过磁性元件的写入电流来编程。磁存储器可以包括多个磁存储单元，对应于多个磁存储单元的多个位线，以及对应于多个磁存储单元的多个源极线。

6. 发明申请

US20110140217A1 SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION 审中-公开
公开(公告)号：US20110140217A1
公开(公告)日：2011-06-16
申请号：US12938988
申请日：2010-11-03
申请人： Paul P. Nguyen , Yiming Huai , Eugene Chen
发明人： Paul P. Nguyen , Yiming Huai , Eugene Chen
IPC分类号： H01L29/82
CPC分类号： G01R33/1284 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3272 , H01F10/3286 , H01F41/302 , H01L43/08
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.

7. 发明申请

US20070074317A1 Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements 有权
标题翻译：使用磁性元件使用铁磁体和磁存储器的自旋转换开关磁性元件
公开(公告)号：US20070074317A1
公开(公告)日：2007-03-29
申请号：US11210452
申请日：2005-08-23
申请人： Mahendra Pakala , Eugene Chen , Yiming Huai
发明人： Mahendra Pakala , Eugene Chen , Yiming Huai
IPC分类号： H01L29/74
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/10
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare-earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。自由层是亚铁磁性的，并且包括导电铁氧体，石榴石，除稀土之外的亚铁磁合金，重稀土 - 过渡金属合金，半金属亚铁磁性和双层中的至少一种。双层包括稀土 - 过渡金属合金层和自旋电流增强层。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

8. 发明授权

US07623369B2 Method and system for providing a magnetic memory structure utilizing spin transfer 有权
标题翻译：提供利用自旋转移的磁记忆体结构的方法和系统
公开(公告)号：US07623369B2
公开(公告)日：2009-11-24
申请号：US12030541
申请日：2008-02-13
申请人： Xiao Luo , Eugene Chen , Lien-Chang Wang , Yiming Huai
发明人： Xiao Luo , Eugene Chen , Lien-Chang Wang , Yiming Huai
IPC分类号： G11C16/04
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。磁性元件由在第一和第二方向通过磁性元件驱动的第一和第二写入电流编程。局部字线与第一电阻率的选择装置连接。每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。位线与磁性元件连接。源极线与选择器件连接。每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

9. 发明申请

US20100264501A1 METHOD FOR MANUFACTURING MAGNETIC STORAGE DEVICE AND MAGNETIC STORAGE DEVICE 有权
标题翻译：用于制造磁存储器件和磁存储器件的方法
公开(公告)号：US20100264501A1
公开(公告)日：2010-10-21
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuta Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuta Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译：公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤，布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

10. 发明授权

US07742328B2 Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors 有权
标题翻译：提供使用非平面晶体管的自旋传输隧道磁存储器的方法和系统
公开(公告)号：US07742328B2
公开(公告)日：2010-06-22
申请号：US11764057
申请日：2007-06-15
申请人： Eugene Chen , Yiming Huai , Alexander A. G. Driskill-Smith
发明人： Eugene Chen , Yiming Huai , Alexander A. G. Driskill-Smith
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L29/785 , H01L29/7853 , H01L29/7854 , Y10S977/935
摘要： A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.
摘要翻译：描述了包含该单元的磁存储单元和磁存储器。磁存储单元包括至少一个磁性元件和至少一个非平面选择装置。磁性元件可通过驱动通过磁性元件的写入电流来编程。磁存储器可以包括多个磁存储单元，对应于多个磁存储单元的多个位线，以及对应于多个磁存储单元的多个源极线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式