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1. 发明授权

US09455242B2 Semiconductor optoelectronic device 有权
标题翻译：半导体光电器件
公开(公告)号：US09455242B2
公开(公告)日：2016-09-27
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/042 , H01L33/00 , H01L25/075 , H01L31/18 , H01L23/00 , H01L33/44 , H01L33/62
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

2. 发明申请

US20120055532A1 SEMICONDUCTOR OPTOELECTRONIC DEVICE 有权
标题翻译：半导体光电器件
公开(公告)号：US20120055532A1
公开(公告)日：2012-03-08
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/0224 , H01L33/08 , H01L33/42
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

3. 发明申请

US20110159624A1 METHOD OF FORMING LIGHT-EMITTING DIODE 审中-公开
标题翻译：形成发光二极管的方法
公开(公告)号：US20110159624A1
公开(公告)日：2011-06-30
申请号：US12981776
申请日：2010-12-30
申请人： Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsin-Ying Wang
发明人： Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsin-Ying Wang
IPC分类号： H01L33/00
CPC分类号： H01L33/005 , H01L21/02436 , H01L21/02664 , H01L33/0079
摘要： A method of forming a light emitting diode is provided. The method includes providing a growth substrate; sequentially forming a sacrificial layer and an epitaxial layer on the growing substrate; forming one or more epitaxial layer openings penetrating the epitaxial layer and exposing the sacrificial layer; forming a supporting layer on the epitaxial layer, the supporting layer having one or more supporting layer openings penetrating the supporting layer and joining the epitaxial layer openings; and selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer.
摘要翻译：提供一种形成发光二极管的方法。该方法包括提供生长衬底; 在生长衬底上依次形成牺牲层和外延层; 形成穿过所述外延层并暴露所述牺牲层的一个或多个外延层开口; 在所述外延层上形成支撑层，所述支撑层具有贯穿所述支撑层并连接所述外延层开口的一个或多个支撑层开口; 并且选择性地蚀刻牺牲层以将生长衬底与外延层分离。

4. 发明申请

US20120018750A1 SEMICONDUCTOR OPTOELECTRONIC DEVICE AND THE METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体光电装置及其制造方法
公开(公告)号：US20120018750A1
公开(公告)日：2012-01-26
申请号：US13190937
申请日：2011-07-26
申请人： Hsin-Ying WANG , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsiang-Ling Chang
发明人： Hsin-Ying WANG , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsiang-Ling Chang
IPC分类号： H01L33/22
CPC分类号： H01L31/18 , H01L27/14636 , H01L27/156 , H01L33/005 , H01L33/0079 , H01L33/42
摘要： A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive layer, wherein the first electrode is connected with the transparent conductive layer by an area excluding the directly contacting part and the directly contacting corresponding part.
摘要翻译：半导体光电子器件包括操作衬底; 设置在所述操作基板上的半导体外延堆叠单元，其包括设置在所述操作基板上的具有第一导电性的第一半导体材料层和设置在所述第一半导体材料层上的具有第二导电性的第二半导体材料层; 设置在所述第二半导体材料层上的透明导电层，其中所述透明导电层包括第一表面，设置在所述第一表面上并与所述第二半导体材料层直接接触的直接接触部分，所述第二表面基本上平行于所述第一表面以及设置在与直接接触部分相对应的第二表面上的直接接触的对应部件; 以及第一电极，其设置在所述操作基板上并且通过所述透明导电层与所述半导体外延层电连接，其中所述第一电极通过除了直接接触部分和直接接触的对应部分之外的区域与所述透明导电层连接。

5. 发明授权

US08809881B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08809881B2
公开(公告)日：2014-08-19
申请号：US13190937
申请日：2011-07-26
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsiang-Ling Chang
IPC分类号： H01L29/20 , H01L27/15 , H01L27/146 , H01L33/42
CPC分类号： H01L31/18 , H01L27/14636 , H01L27/156 , H01L33/005 , H01L33/0079 , H01L33/42
摘要： A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive layer, wherein the first electrode is connected with the transparent conductive layer by an area excluding the directly contacting part and the directly contacting corresponding part.
摘要翻译：半导体光电子器件包括操作衬底; 设置在所述操作基板上的半导体外延堆叠单元，包括设置在所述操作基板上的具有第一导电性的第一半导体材料层和设置在所述第一半导体材料层上的具有第二导电性的第二半导体材料层; 设置在所述第二半导体材料层上的透明导电层，其中所述透明导电层包括第一表面，设置在所述第一表面上并与所述第二半导体材料层直接接触的直接接触部分，所述第二表面基本上平行于所述第一表面以及设置在与直接接触部分相对应的第二表面上的直接接触的对应部件; 以及第一电极，其设置在所述操作基板上并且通过所述透明导电层与所述半导体外延层电连接，其中所述第一电极通过除了直接接触部分和直接接触的对应部分之外的区域与所述透明导电层连接。

6. 发明授权

US08704257B2 Light-emitting element and the manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08704257B2
公开(公告)日：2014-04-22
申请号：US13022098
申请日：2011-02-07
申请人： Shih-i Chen , Chia-Liang Hsu , Chiu-Lin Yao , Tzu-Chieh Hsu , Chien-Fu Huang
发明人： Shih-i Chen , Chia-Liang Hsu , Chiu-Lin Yao , Tzu-Chieh Hsu , Chien-Fu Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/38
摘要： A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.
摘要翻译：发光元件包括用于发光的发光叠层和基板结构，包括：第一基板，设置在所述发光堆叠下方，并具有面向所述发光叠层的第一表面; 以及第二基板，其设置在所述发光堆叠下方并且具有面向所述发光叠层的第二表面; 以及形成在第一基板和第二基板之间并具有不垂直于第一表面的倾斜角度的反射层。

7. 发明授权

US08420418B2 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08420418B2
公开(公告)日：2013-04-16
申请号：US12824422
申请日：2010-06-28
申请人： Tzu-Chieh Hsu
发明人： Tzu-Chieh Hsu
IPC分类号： H01L21/44
CPC分类号： H01L33/20 , H01L21/6835 , H01L24/29 , H01L24/48 , H01L24/97 , H01L33/0079 , H01L2221/68359 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/014 , H01L2924/12041 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method of fabricating a light emitting device comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface, forming a plurality of light emitting stack layers on the first major surface, forming an etching protection layer on the plurality of light emitting stack layers, forming a plurality of discontinuous holes or continuous lines on the substrate by a laser beam with the depth of 10˜150 μm, cleaving the substrate through the plurality of discontinuous holes or continuous lines, providing a adhesion layer on the second major surface of the substrate, and expanding the adhesion layer to form a plurality of separated light emitting device.
摘要翻译：一种制造发光器件的方法，包括：提供衬底，其中所述衬底包括第一主表面和与所述第一主表面相对的第二主表面，在所述第一主表面上形成多个发光堆叠层，形成蚀刻保护层，通过深度为10〜150μm的激光束在基板上形成多个不连续的孔或连续的线，通过多个不连续的孔或连续的线切断基板，在衬底的第二主表面上提供粘合层，并且使粘合层膨胀以形成多个分离的发光器件。

8. 发明授权

US08405106B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08405106B2
公开(公告)日：2013-03-26
申请号：US12753551
申请日：2010-04-02
申请人： Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
发明人： Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.
摘要翻译：一种发光器件，包括：具有第一导电类型半导体层的发光层叠层，形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层，其中，第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分，所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。

9. 发明申请

US20120256164A1 OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：光电器件及其制造方法
公开(公告)号：US20120256164A1
公开(公告)日：2012-10-11
申请号：US13528059
申请日：2012-06-20
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
IPC分类号： H01L33/06
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.
摘要翻译：光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。半导体系统在第一窗口层和第二窗口层之间。第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。窗口层具有与半导体系统不同的半导体材料。选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。

10. 发明授权

US08207550B2 Optoelectronic device and the manufacturing method thereof 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08207550B2
公开(公告)日：2012-06-26
申请号：US13021307
申请日：2011-02-04
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
IPC分类号： H01L33/58 , H01L33/60
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.
摘要翻译：本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层，其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层，从而形成窗口层和半导体系统之间的宽度差，并且宽度差异大于1微米。

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