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    • 3. 发明申请
    • Light-Assisted Electrochemical Shunt Passivation for Photovoltaic Devices
    • 光辅助电化学分流钝化光伏器件
    • US20070256729A1
    • 2007-11-08
    • US11578359
    • 2005-04-15
    • Aarohi VijhXunming Deng
    • Aarohi VijhXunming Deng
    • H01L31/00
    • H01L31/076H01L31/208Y02E10/548Y02P70/521Y10T29/53135
    • A method of passivating current-shunting defects in a photovoltaic device and such passivated photovoltaic devices are described. The photovoltaic device includes a thin film body with a superposed electrode comprised of a layer of transparent electrically conductive electrode material. The method includes converting the transparent, electrically conductive electrode material to a material having a higher electrical resistivity than the transparent electrically conductive electrode material or by removing the transparent conducting electrode material, by simultaneously: 1) immersing at least a portion of the electrode in a conversion reagent, 2) illuminating the immersed electrode with a suitable source of illumination, and 3) applying an appropriate electrical bias to activate the conversion.
    • 描述了一种钝化光伏器件中的电流分流缺陷的方法和这种钝化的光伏器件。 光伏器件包括具有由透明导电电极材料层组成的叠置电极的薄膜体。 该方法包括:将透明导电电极材料转换成具有比透明导电电极材料更高的电阻率的材料,或者通过同时移除透明导电电极材料:1)将电极的至少一部分浸入到 转换试剂,2)用适当的照明源照射浸没的电极,以及3)施加适当的电偏压以激活转化。
    • 8. 发明授权
    • High quality photovoltaic semiconductor material and laser ablation
method of fabrication same
    • 高品质光电半导体材料和激光烧蚀方法
    • US5231047A
    • 1993-07-27
    • US811159
    • 1991-12-19
    • Stanford R. OvshinskyXunming DengRosa Young
    • Stanford R. OvshinskyXunming DengRosa Young
    • H01L21/203H01L31/20
    • H01L31/202H01L21/02381H01L21/02422H01L21/02532H01L21/0262H01L21/02631H01L31/204Y02E10/50Y02P70/521Y10S148/093Y10S438/909
    • A high quality, narrow band gap, hydrogenated amorphous germanium or amorphous silicon alloy material characterized by a host matrix in which all hydrogen is incorporated therein in germanium monohydride or silicon monohydride form, respectively; their mobility-lifetime product for non-equilibrium charge carriers is about 10.sup.-8 and about 10.sup.-7, respectively; their density of defect states in the band gap thereof is less than about 1.times.10.sup.17 and about 2.times.10.sup.16 /cm.sup.3, respectively; and their band gap is about 1.5 and about 0.9 eV, respectively. There is also disclosed a structure formed from a plurality of very thin layer pairs of hydrogenated amorphous germanium and amorphous silicon alloy material, each layer pair of which cooperates to provide narrow band gap material. From about 3 to about 7 atomic percent fluorine is added to the germanium and/or silicon alloy material so as to provide a strong bond (as compared to hydrogen) so as to provide reduced sensitivity to Stabler/Wronski degradation. The preferred method of fabricating such improved narrow band gap materials is through a laser ablation process in which hydrogen or fluorine gas is introduced for incorporation into the germanium or silicon host matrix, thereby eliminating the reliance on the zoo of precursor species present in r.f. or microwave plasma process.
    • 高质量,窄带隙,氢化无定形锗或非晶硅合金材料,其特征在于主体基体,其中所有氢分别以锗一氢化物或一硅化氢形式引入其中; 其非平衡电荷载流子的迁移寿命产物分别为约10-8和约10-7; 其带隙中缺陷状态的密度分别小于约1×10 17和约2×10 16 / cm 3; 它们的带隙分别为约1.5和约0.9eV。 还公开了由多个非常薄的氢化无定形锗和非晶硅合金材料层构成的结构,其每一层都配合以提供窄带隙材料。 约3至约7原子%的氟加入到锗和/或硅合金材料中以提供强键(与氢相比),以便降低对Stabler / Wronski降解的敏感性。 制造这种改进的窄带隙材料的优选方法是通过激光烧蚀工艺,其中引入氢或氟气以掺入到锗或硅主体基质中,从而消除了对r.f中存在的前体物质的动物园的依赖。 或微波等离子体处理。