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    • 7. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08563405B2
    • 2013-10-22
    • US12774795
    • 2010-05-06
    • Wen-Hsiung Chang
    • Wen-Hsiung Chang
    • H01L21/00H01L21/44H01L21/50
    • H01L21/76898H01L21/6835H01L2221/68327H01L2221/6834H01L2221/68381
    • A method for manufacturing semiconductor device includes the following steps. First, a carrier substrate and a plurality of pieced segments of wafer are provided. Each of the pieced segments of wafer has an active surface and a back surface on opposite sides thereof. Further, there is at least a bonding pad disposed on the active surface. Next, an adhering layer is formed between the carrier substrate and the active surfaces of the pieced segments of wafer, so as to make the pieced segments of wafer adhere to the carrier substrate. Next, a through silicon via is formed in each of the pieced segments of wafer to electrically connect to the bonding pad correspondingly. Then, the pieced segments of wafer are separated from the carrier substrate.
    • 一种制造半导体器件的方法包括以下步骤。 首先,提供载体基板和晶片的多个接头段。 晶片的每个接合段具有活性表面和在其相对侧上的后表面。 此外,至少存在设置在有源表面上的接合焊盘。 接下来,在载体基板和晶片的接合部分的活性表面之间形成粘合层,以使晶片的接头段粘附到载体基板上。 接下来,在晶片的每个接合段中形成贯通硅通孔,以相应地电连接到焊盘。 然后,晶片的接合部分与载体基板分离。