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    • 1. 发明授权
    • Method of photolithography using super-resolution near-field structure
    • 使用超分辨率近场结构的光刻方法
    • US06506543B1
    • 2003-01-14
    • US09693080
    • 2000-10-20
    • Tzu-Feng TsengWen-Rei GuoKuei-Yen Wu
    • Tzu-Feng TsengWen-Rei GuoKuei-Yen Wu
    • G03C500
    • G03F7/70216G03F7/094Y10S430/146
    • A method of photolithography using super-resolution near-field structure. A super-resolution near-field structure is formed on a semiconductor chip comprising a substrate and a photoresist layer thereon. An incident light beam penetrates through the super-resolution near-field structure to expose the photoresist layer. While penetrating through the super-resolution near field structure, the intensity of the incident light beam is increased, and the aperture of the light beam is reduced. As a result, the line width of the pattern formed on the photoresist layer is narrowed. The super-resolution near-field structure has a first dielectric layer, a second dielectric layer and an active layer sandwiched between the first and the second dielectric layers. The active layer is formed of one of gallium (Ga), germanium (Ge), arsenic (As), selenium (Se), indium (In), tin (Sn), antimony (Sb), tellurium (Te), and silver (Ag). Or alternatively, the active layer can be formed of one of the materials of gallium oxide, germanium oxide, arsenic oxide, selenium oxide, indium oxide, tin oxide, antimony oxide, tellurium oxide and silver oxide.
    • 使用超分辨率近场结构的光刻方法。 在其上包括基板和光致抗蚀剂层的半导体芯片上形成超分辨率近场结构。 入射光束穿过超分辨率近场结构以暴露光致抗蚀剂层。 当穿透超分辨率近场结构时,入射光束的强度增加,光束的孔径减小。 结果,形成在光致抗蚀剂层上的图案的线宽变窄。 超分辨率近场结构具有第一介电层,第二介电层和夹在第一和第二介电层之间的有源层。 有源层由镓(Ga),锗(Ge),砷(As),硒(Se),铟(In),锡(Sn),锑(Sb),碲(Te)和银 (Ag)。 或者,有源层可以由氧化镓,氧化锗,氧化砷,氧化硒,氧化铟,氧化锡,氧化锑,氧化碲和氧化银等材料之一构成。
    • 2. 发明授权
    • Method of increasing recording density and capacity of a compact disc
    • 提高光盘记录密度和容量的方法
    • US06404722B1
    • 2002-06-11
    • US09706262
    • 2000-11-03
    • Tzu-Feng TsengWen-Rei GuoKuei-Yen Wu
    • Tzu-Feng TsengWen-Rei GuoKuei-Yen Wu
    • G11B700
    • B82Y10/00G11B7/1365G11B7/1381G11B7/1387
    • A method of increasing recording density and capacity of a compact disc. The compact disc has a transparent substrate and a data-recording region on the transparent substrate. To perform data access, a laser light beam emitting from a light source transmits through the transparent substrate and is incident on the data recording region. By inserting a optical plate with a super-resolution near-field structure between the light source and the compact disc, the light intensity of the laser light beam is increased and the aperture of the laser light beam is reduced. Therefore, the recording dimension of data recording region on the compact disc is reduced, and the recording density and capacity of the compact disc is increased. The super-resolution near-field structure is formed of a first dielectric layer, a second dielectric layer and an active layer sandwiched between the first and second dielectric layers. The material of the active layer is selected from one of gallium, germanium, arsenic, selenium, indium, antimony (stibium), tellurium and silver or gallium oxide, germanium oxide, arsenic oxide, selenium oxide, indium oxide, antimony oxide, tellurium oxide and silver oxide.
    • 提高光盘的记录密度和容量的方法。 光盘在透明基板上具有透明基板和数据记录区域。 为了进行数据访问,从光源发射的激光束透过透明基板并入射到数据记录区域。 通过在光源和光盘之间插入具有超分辨率近场结构的光学板,激光束的光强度增加,激光光束的孔径减小。 因此,光盘上的数据记录区域的记录尺寸减小,并且光盘的记录密度和容量增加。 超分辨率近场结构由夹在第一和第二介电层之间的第一电介质层,第二电介质层和有源层形成。 活性层的材料选自镓,锗,砷,硒,铟,锑(锑),碲和银或氧化镓之一,氧化锗,氧化砷,氧化硒,氧化铟,氧化锑,氧化碲 和氧化银。
    • 3. 发明授权
    • Method of fabricating a polysilicon layer
    • 制造多晶硅层的方法
    • US06391395B1
    • 2002-05-21
    • US09695438
    • 2000-10-23
    • Tzu-Feng TsengYi-Ming ChenWen-Rei Guo
    • Tzu-Feng TsengYi-Ming ChenWen-Rei Guo
    • H05H102
    • H01L21/02675H01L21/02532H01L21/02686H01L21/2026H01L29/6675H01L29/78633
    • The present invention is directed to a method of forming a polysilicon layer. A light shield layer having a super-resolution near-field structure is arranged on an amorphous silicon layer. The super-resolution near-field structure includes a first dielectric layer, a second dielectric layer, and an active layer between the first dielectric layer and the second dielectric layer. The light shield layer is irradiated by a laser beam having a first intensity to generate a transmitted laser beam having a second intensity. The second intensity is greater than the first intensity. An annealing process is performed to irradiate the amorphous silicon layer with the transmitted laser beam having a second intensity thereby converting the amorphous silicon layer into a polysilicon layer.
    • 本发明涉及一种形成多晶硅层的方法。 具有超分辨率近场结构的遮光层布置在非晶硅层上。 超分辨率近场结构包括第一电介质层,第二电介质层和在第一介电层和第二介电层之间的有源层。 光屏蔽层被具有第一强度的激光束照射以产生具有第二强度的透射激光束。 第二强度大于第一强度。 执行退火处理以用具有第二强度的透射激光束照射非晶硅层,从而将非晶硅层转化为多晶硅层。
    • 6. 发明授权
    • Cutting apparatus
    • 切割设备
    • US07591211B2
    • 2009-09-22
    • US11625521
    • 2007-01-22
    • Tzu-Feng TsengPei-Yuan Lee
    • Tzu-Feng TsengPei-Yuan Lee
    • B26D1/06
    • B26D5/16B26D1/08B26D7/0006Y10T83/8843Y10T83/8853Y10T83/8854Y10T83/9447
    • A cutting apparatus includes a motor, a gear set, a gliding block, a rotating shaft and a handling element. The gear set includes a first gear part connected to the motor and a second gear part connected to a protrusion member. The center line of the protrusion member is shifted from the center line of the second gear part. The gliding block includes a gliding channel for receiving the protrusion member therein. The protrusion member is linearly moved along the gliding channel back and forth when the protrusion member is rotated in a circular motion. The rotating shaft is connected to an end of the gliding block such that the rotating shaft is rotated with synchronous linear movement of the protrusion member. The handling element has a first end sheathed around the rotating shaft and a second end operated to have the cutting member linearly moved along two guiding tracks.
    • 切割装置包括马达,齿轮组,滑动块,旋转轴和操纵元件。 齿轮组包括连接到马达的第一齿轮部分和连接到突出部件的第二齿轮部分。 突出部件的中心线从第二齿轮部分的中心线偏移。 滑动块包括用于在其中接收突出构件的滑动通道。 当突起构件以圆周运动旋转时,突出构件沿滑动通道前后移动。 旋转轴连接到滑动块的一端,使得旋转轴随着突起构件的同步线性运动而旋转。 处理元件具有围绕旋转轴的护套的第一端和操作成使切割构件沿着两个导轨线性移动的第二端。
    • 7. 发明申请
    • FLAT MEDIA CUTTING DEVICE
    • 平面媒体切割设备
    • US20060191391A1
    • 2006-08-31
    • US11382063
    • 2006-05-08
    • Tzu-Feng Tseng
    • Tzu-Feng Tseng
    • B26D1/18
    • B26D5/08B26D1/185B26D7/025B26D2007/0087Y10T83/7507Y10T83/8769Y10T83/8822
    • A flat media cutting device includes a planar base, two supports fixed to the base, a clamp extending between the two supports, a slider mounted in a slidable manner on the clamp, a linear actuator parallel to the clamp and connected to the slider, and a motor connected to the linear actuator. Each end of the clamp is connected to one support. At least one support prevents movement of the clamp in the second direction and opposite, and both supports allow movement of the clamp in the first direction and opposite. When the motor drives the linear actuator, the slider is driven along the clamp and a cutting tool of the slider cuts media held to the base by the clamp.
    • 平面介质切割装置包括平面基座,固定到基座的两个支撑件,在两个支撑件之间延伸的夹具,以滑动方式安装在夹具上的滑块,平行于夹具并连接到滑块的线性致动器,以及 连接到线性致动器的马达。 夹具的每一端连接到一个支架。 至少一个支撑件防止夹具沿第二方向移动并且相反,并且两个支撑件允许夹具沿第一方向和相反的运动。 当电机驱动线性致动器时,滑块沿着夹具被驱动,并且滑块的切削工具通过夹具切割保持在基座上的介质。
    • 10. 发明授权
    • Organic adhesive light-emitting device with ohmic metal contact
    • 有机粘合剂发光装置与欧姆金属接触
    • US07358540B2
    • 2008-04-15
    • US10905221
    • 2004-12-22
    • Min-Hsun HsiehYa-Lan YangChing-San TaoTzu-Feng TsengJr-Peng Ni
    • Min-Hsun HsiehYa-Lan YangChing-San TaoTzu-Feng TsengJr-Peng Ni
    • H01L33/00
    • H01L33/0079
    • An organic adhesive light-emitting device with an ohmic metal contact, including a conductive substrate having a first surface and a second surface over the upper surface, a light-emitting stack layer, an ohmic metal bulge formed over the first surface of the conductive substrate, a reflection layer formed over the light-emitting stack layer, a first reaction layer formed over the ohmic metal bulge and the second surface of the conductive substrate, a second reaction layer formed over the reflection layer, and an organic adhesive material. The reaction layer can punch through the organic adhesive material for forming the ohmic contact with the first reaction layer bonded to the second reaction layer by the organic adhesive material, and with the ohmic metal bulge.
    • 一种具有欧姆金属接触的有机粘合剂发光器件,包括在上表面上具有第一表面和第二表面的导电基底,发光堆叠层,形成在导电基底的第一表面上的欧姆金属凸起 形成在发光堆叠层上的反射层,形成在欧姆金属凸起上的第一反应层和导电基板的第二表面,形成在反射层上的第二反应层和有机粘合材料。 反应层可穿过有机粘合剂材料,以通过有机粘合剂材料与欧姆金属凸起形成与第二反应层接合的第一反应层的欧姆接触。