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1. 发明授权

US5322568A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5322568A
公开(公告)日：1994-06-21
申请号：US999548
申请日：1992-12-31
申请人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
发明人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
IPC分类号： C23C16/452 , C23C16/00
CPC分类号： C23C16/452
摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.
摘要翻译：一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中，并允许他们作出反应彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

2. 发明授权

US5160543A Device for forming a deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5160543A
公开(公告)日：1992-11-03
申请号：US837601
申请日：1992-02-21
申请人： Shunichi Ishihara , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/452 , C23C16/455 , G03G5/082 , H01L21/205 , H01L31/20
CPC分类号： C23C16/45561 , C23C16/452 , C23C16/455 , G03G5/08278 , H01L21/0237 , H01L21/02532 , H01L21/0262 , H01L31/202 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： There is disclosed a device for forming a deposited film on a substrate through utilization of chemical reaction between a gaseous starting material for a film to be formed and a gaseous halogenic oxidizing agent which has one or more gas introducing means having a multi-tubular structure with a converted tip end or having a meeting space for both the gases.
摘要翻译：公开了一种用于通过利用待形成的膜的气态原料与气态卤素氧化剂之间的化学反应在基板上形成沉积膜的装置，所述气态卤化氧化剂具有一个或多个具有多管状结构的气体引入装置，转换的尖端或两个气体具有会议空间。

3. 发明授权

US4868014A Method for forming thin film multi-layer structure member 失效
标题翻译：薄膜多层结构件形成方法
公开(公告)号：US4868014A
公开(公告)日：1989-09-19
申请号：US3054
申请日：1987-01-13
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/452 , G03G5/082 , H01L21/205 , H01L21/336 , H01L31/20
CPC分类号： H01L29/66757 , C23C16/452 , G03G5/08235 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , H01L31/204 , Y02E10/50
摘要： A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：一种用于形成薄膜多层结构构件的方法，所述薄膜多层结构构件具有至少一种受限于价电子的半导体薄膜和在带隙中调节的半导体薄膜中的至少一种，包括形成至少一层半导体薄膜通过对由成膜空间中具有催化作用的过渡金属元素的单一物质或合金构成的发热元件进行加热而产生发热，使起始材料（A）为在分子中含有卤素和氢的至少一种元素的沉积膜形成物和含有成为价电子控制器和带隙调节剂中的至少一种的元素的化合物（B），其在发热下与发热元件接触导致热解离反应进行活化，从而形成成为沉淀的起始原料的前体（X）并且使用前体（X）作为薄膜的构成元素的供给源，以及通过引入用于沉积膜形成的气态原料（a）形成至少一层其它薄膜的步骤，以及具有起始材料（a）的氧化作用的气态卤素氧化剂进入反应空间以实现其间的接触，由此在激发态下化学形成包含前体的多种前体，并使用至少一种前体前体作为用于沉积膜的构成元件的馈送源。

4. 发明授权

US4865883A Method for forming a deposited film containing IN or SN 失效
标题翻译：用于形成含有IN或SN的沉积膜的方法
公开(公告)号：US4865883A
公开(公告)日：1989-09-12
申请号：US298202
申请日：1989-01-17
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/452 , H01L21/205
CPC分类号： C23C16/407
摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.
摘要翻译：形成沉积膜的方法包括引入含有In原子或Sn原子的气态原料以形成沉积膜，将具有所述原料氧化作用的气态卤素氧化剂和含氧气体化合物引入到反应空间以在其间进行化学接触从而形成多个在激发态下含有前体的前体，并且使用这些前体的至少一种前体作为进料，在存在于成膜空间中的基底上形成沉积膜源的沉积膜的构成元素。

5. 发明授权

US4844950A Method for forming a metal film on a substrate 失效
标题翻译：在基板上形成金属膜的方法
公开(公告)号：US4844950A
公开(公告)日：1989-07-04
申请号：US942213
申请日：1986-12-16
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/06 , C23C16/30 , C23C16/44 , H01L21/205
CPC分类号： C23C16/06
摘要： A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：形成沉积膜的方法包括向反应空间引入含有用于形成沉积膜的过渡金属元素的可气化起始材料和具有用于所述起始材料的氧化作用的气态卤素氧化剂以在其间进行接触从而在激发态下化学形成多种前体，包括前体，并且使用这些前体的至少一种前体作为沉积的构成元素的进料源，在存在于成膜空间中的基底上形成金属沉积膜电影。

6. 发明授权

US5482557A Device for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5482557A
公开(公告)日：1996-01-09
申请号：US305285
申请日：1994-09-14
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu , Keishi Saitoh
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu , Keishi Saitoh
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/54 , G03G5/08 , C23C16/00
CPC分类号： C23C16/45563 , C23C16/402 , C23C16/455 , C23C16/54 , G03G5/08
摘要： There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.
摘要翻译：公开了一种用于形成沉积膜的装置，其通过使用于形成沉积膜的气态原料与在所述原料上具有氧化作用的气态氧化剂接触形成沉积膜，从而引起化学反应包括多个用于形成彼此连接的沉积膜的室，所述室具有气体释放装置，其具有用于释放所述气态原料的孔口和用于释放分别设置在两壁上的气态氧化剂的孔口彼此相对的表面以及支撑设定装置，其布置成使得其结构的至少一部分可以包括在通过两个壁表面上的气体释放装置相互连接形成的平面内。

7. 发明授权

US4834023A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US4834023A
公开(公告)日：1989-05-30
申请号：US943437
申请日：1986-12-19
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/455 , C23C16/45578
摘要： An apparatus for forming a deposited film by bringing gaseous starting materials for forming deposited film contact with a gaseous halogenic oxidizing agent which exerts oxidative effect on the starting materials, comprises, in a chamber for forming the deposited film, gas discharge means comprised of a gas discharge pipe for discharging the gaseous starting materials and a gas discharge pipe for discharging the halogenic oxidizing agent and means for disposing supports on which a plurality of cylindrical supports for depositing the film thereon are arranged around the gas discharge means.
摘要翻译：通过使用于形成沉积膜的气态原料与对原材料发挥氧化作用的气态卤素氧化剂接触形成沉积膜的装置包括在用于形成沉积膜的室中，包括气体用于排出气态原料的排出管和用于排出卤素氧化剂的气体排出管以及用于设置用于沉积其上的多个圆柱形支撑件的支撑件的装置设置在气体排出装置周围。

8. 发明授权

US4772570A Method for producing an electronic device having a multi-layer structure 失效
标题翻译：一种具有多层结构的电子装置的制造方法
公开(公告)号：US4772570A
公开(公告)日：1988-09-20
申请号：US946206
申请日：1986-12-24
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/22 , C23C16/452 , H01L21/205 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/20
CPC分类号： H01L21/0245 , C23C16/22 , C23C16/452 , H01L21/02422 , H01L21/02425 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S438/935
摘要： A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate comprises forming at least one of said valence electron controlled semiconductor thin layers controlled according to the plasma CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
摘要翻译：一种具有多层结构的电子器件的制造方法，该多层结构包括在基片上形成的一个或多个价电子受控半导体薄层，包括：根据等离子体CVD法控制的至少一个所述价电子受控半导体薄层，根据包括引入用于形成沉积膜的气态原料和具有将所述起始材料氧化成反应空间的气态卤素氧化剂的方法，至少一个其它构成层之间形成化学接触，由此形成多个前体，其包括处于激发态的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。

9. 发明授权

US5366554A Device for forming a deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5366554A
公开(公告)日：1994-11-22
申请号：US104497
申请日：1993-08-10
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/54 , G03G5/08 , C23C16/00
CPC分类号： C23C16/45563 , C23C16/402 , C23C16/455 , C23C16/54 , G03G5/08
摘要： There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.
摘要翻译：公开了一种用于形成沉积膜的装置，其通过使用于形成沉积膜的气态原料与在所述原料上具有氧化作用的气态氧化剂接触形成沉积膜，从而引起化学反应包括多个用于形成彼此连接的沉积膜的室，所述室具有气体释放装置，其具有用于释放所述气态原料的孔口和用于释放分别设置在两壁上的气态氧化剂的孔口彼此相对的表面以及支撑设定装置，其布置成使得其结构的至少一部分可以包括在通过两个壁表面上的气体释放装置相互连接形成的平面内。

10. 发明授权

US4869931A Method for forming deposited films of group II-VI compounds 失效
标题翻译：形成II-VI族化合物沉积膜的方法
公开(公告)号：US4869931A
公开(公告)日：1989-09-26
申请号：US298219
申请日：1989-01-17
申请人： Masaaki Hirooka , Masahiro Kanai , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masaaki Hirooka , Masahiro Kanai , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/30 , C23C16/44 , C23C16/452 , H01L21/205 , H01L31/18
CPC分类号： H01L31/1828 , Y02E10/543
摘要： A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：一种形成沉积膜的方法，其包括在周期表II族中引入含有元素的气态原料，该原料含有周期表第VI族元素，其可气化以形成沉积膜和对所述原料具有氧化作用的气态卤素氧化剂进入反应空间以进行接触，从而在激发态下化学形成含有前体的多种前体，并在存在于通过使用所述前体的至少一种前体作为沉积膜的构成元素的进料源的成膜空间。

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