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1. 发明授权

US4155094A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4155094A
公开(公告)日：1979-05-15
申请号：US837709
申请日：1977-09-29
申请人： Shinya Ohba , Kyotake Uchiumi
发明人： Shinya Ohba , Kyotake Uchiumi
IPC分类号： H01L27/146 , H01L27/148 , H01L31/113 , H04N5/335 , H04N5/345 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L31/113 , H01L27/14643
摘要： In a semiconductor photoelectric device comprising a plurality of photodiodes, MOS transistor switches and signal output means which are provided on a semiconductor substrate, a solid-state imaging device characterized in that said each photodiode is constructed of a PN-junction diode and an MIS or MOS diode. Means are provided for permitting incident light to fall on only the PN-junction diode.
摘要翻译：在包括设置在半导体衬底上的多个光电二极管，MOS晶体管开关和信号输出装置的半导体光电装置中，固态成像装置的特征在于，所述每个光电二极管由PN结二极管和MIS构成， MOS二极管。提供了允许入射光仅落在PN结二极管上的装置。

2. 发明授权

US5144447A Solid-state image array with simultaneously activated line drivers 失效
标题翻译：具有同时激活的线驱动器的固态图像阵列
公开(公告)号：US5144447A
公开(公告)日：1992-09-01
申请号：US330314
申请日：1989-03-29
申请人： Hajime Akimoto , Shinya Ohba , Mitsuyuki Mitsui
发明人： Hajime Akimoto , Shinya Ohba , Mitsuyuki Mitsui
IPC分类号： H04N5/357 , H04N5/3745
CPC分类号： H04N5/35518 , H04N3/1512 , H04N3/155
摘要： The present invention relates to an improved solid-state imaging device having pixel amplifiers. The higher definition of the device results in the increase in number of pixels as large as not less than two million. When a solid-state imaging device having such a large number of pixels is provided with pixel amplifiers, there arise various problems associated with a power source and a power supply line as well as a problem inherent to the pixel amplifier type of solid-state imaging device. The present invention provides a solid-state imaging device in which noises or the like are prevented and a picture or image quality having high definition can be obtained, by suppressing a voltage drop of the power supply line and by compensating fluctuations in outputs of the pixel amplifiers.
摘要翻译：本发明涉及具有像素放大器的改进的固态成像装置。器件的高清晰度导致像素数量的增加不少于200万像素。当具有这样大量像素的固态成像装置设置有像素放大器时，会出现与电源和电源线相关的各种问题以及像素放大器类型的固态成像固有的问题设备。本发明提供一种通过抑制电源线的电压降和补偿像素的输出的波动来防止噪声等的固态成像装置，并且可以获得具有高清晰度的图像或图像质量放大器

3. 发明授权

US5016108A Solid-state imaging device having series-connected pairs of switching MOS transistors for transferring signal electric charges therethrough 失效
标题翻译：固态成像装置具有串联连接的开关MOS晶体管对，用于传送信号电荷
公开(公告)号：US5016108A
公开(公告)日：1991-05-14
申请号：US214514
申请日：1988-07-01
申请人： Hajime Akimoto , Shinya Ohba
发明人： Hajime Akimoto , Shinya Ohba
IPC分类号： H01L27/146
CPC分类号： H01L27/14643
摘要： A solid-state imaging device has a plurality of light receiving elements formed in a semiconductor substrate. Signal electric charges generated by light incident upon the light receiving elements and stored in the individual light receiving elements are sequentially read out through signal lines by scanning a plurality of switches. Each of the switches includes a series connection of a first MOS transistor switching element formed in the semiconductor substrate and a second MOS transistor formed in a semiconductor provided above the semiconductor substrate through an insulator. The first switching element is disposed on the side of the light receiving element and the second switching element is disposed on the side of the signal output terminal.
摘要翻译：固态成像装置具有形成在半导体衬底中的多个光接收元件。通过扫描多个开关，通过信号线顺序读出入射在光接收元件上并存储在各个光接收元件中的光产生的信号电荷。每个开关包括通过绝缘体形成在半导体衬底中形成的第一MOS晶体管开关元件和形成在半导体衬底之上的半导体中的第二MOS晶体管的串联连接。第一开关元件设置在光接收元件的侧面上，第二开关元件设置在信号输出端子的一侧。

4. 发明授权

US4954895A Solid-state imaging device including photoelectric conversion elements integrated at a surface of a semiconductor substrate 失效
标题翻译：固态成像装置，其包括集成在半导体基板的表面的光电转换元件
公开(公告)号：US4954895A
公开(公告)日：1990-09-04
申请号：US278844
申请日：1988-12-02
申请人： Hajime Akimoto , Shinya Ohba
发明人： Hajime Akimoto , Shinya Ohba
IPC分类号： H01L27/00 , H01L27/146 , H04N5/335 , H04N5/365 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14643
摘要： A solid-state imaging device has a plurality of photodiodes (photoelectric conversion elements) formed in a surface of a semiconductor substrate in a matrix configuration and reading means for reading out signal charges stored in the photodiodes in accordance with the incident lights in a predetermined order. This reading means includes active elements, such as MOS type transistors, connected to each of the photodiodes. A MOS type transistor constituting part of theses active elements is provided in the path of the transmitting incident light for the associated photodiode. By this configuration, the area occupied by one picture element is reduced as far as the processing steps allow.
摘要翻译：固态成像装置具有以矩阵形式形成在半导体衬底的表面中的多个光电二极管（光电转换元件）和用于按照预定顺序根据入射光读出存储在光电二极管中的信号电荷的读取装置。该读取装置包括连接到每个光电二极管的有源元件，例如MOS型晶体管。构成这些有源元件的一部分的MOS型晶体管设置在用于相关光电二极管的透射入射光的路径中。通过该配置，只要处理步骤允许，就减少一个图像元素所占据的面积。

5. 发明授权

US4825287A Digital video signal processor 失效
标题翻译：数字视频信号处理器
公开(公告)号：US4825287A
公开(公告)日：1989-04-25
申请号：US063476
申请日：1987-06-18
申请人： Toru Baji , Tatsuji Matsuura , Toshiro Tsukada , Shinya Ohba
发明人： Toru Baji , Tatsuji Matsuura , Toshiro Tsukada , Shinya Ohba
IPC分类号： H04N5/14
CPC分类号： H04N5/14
摘要： According to the present invention, the number of elements of a signal processing circuit or the like can be drastically reduced by conducting a time-multiplex processing. In a transversal filter having a coefficient of symmetry of 16 taps, for example, the prior art requires about 58,000 transistors. In case four signal processing cores (i.e., SPC) having a function of four taps are used, the number of transistors required can be reduced to about 34,000 by a duplexing process. In case two SPCs having a function of eight taps are used, the number can be reduced to about 19,000 by a quadplexing process. In case, moreover, one SPC having a function of sixteen taps is used, the number can be reduced to about 13,000 by an octaplexing process. Here, the reason why the number of elements is not halved even if the number of the SPCs is halved is that the number of elements to be used in control circuits, memories and so on increases.
摘要翻译：根据本发明，通过进行时间复用处理，可以大大减少信号处理电路等的元件数量。在具有16个抽头的对称系数的横向滤波器中，例如，现有技术需要约58,000个晶体管。在使用具有四个抽头功能的四个信号处理核心（即，SPC）的情况下，通过双工处理，所需的晶体管数量可以减少到约34,000个。在使用具有八个抽头功能的两个SPC的情况下，通过四重处理可将数量减少到约19,000个。此外，在使用具有十六个抽头功能的一个SPC的情况下，也可以通过八次打印处理将数量减少到约13,000个。这里，即使SPC的数量减半，元件的数量不减半的原因在于控制电路，存储器等中要使用的元件的数量增加。

6. 发明授权

US4407010A Solid state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4407010A
公开(公告)日：1983-09-27
申请号：US290570
申请日：1981-08-06
申请人： Toru Baji , Toshihisa Tsukada , Norio Koike , Toshiyuki Akiyama , Iwao Takemoto , Shigeru Shimada , Chushirou Kusano , Shinya Ohba , Haruo Matsumaru
发明人： Toru Baji , Toshihisa Tsukada , Norio Koike , Toshiyuki Akiyama , Iwao Takemoto , Shigeru Shimada , Chushirou Kusano , Shinya Ohba , Haruo Matsumaru
IPC分类号： H01L27/14 , H01L21/8234 , H01L23/62 , H01L23/64 , H01L27/02 , H01L27/06 , H01L27/088 , H01L27/092 , H01L27/146 , H01L29/78 , H01L31/08 , H02H7/20 , H03F1/42 , H03F1/52 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/374 , H04N3/14
CPC分类号： H01L23/62 , H01L23/647 , H01L27/0251 , H01L27/14654 , H04N3/1512 , H04N3/1568 , H01L2924/0002
摘要： A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counteract noise and blooming, a second field effect transistor acting as an amplifier is connected between the photoelectric converting element and the switching field effect transistor. A third field effect transistor is coupled to the photoelectric converting element for resetting the same.
摘要翻译：具有二维阵列中的多个固态元件以形成图形单元的固态图像拾取装置。每个固态元件包括光电转换元件和开关场效应晶体管，以允许扫描器扫描元件。为了抵消噪声和起霜，用作放大器的第二场效应晶体管连接在光电转换元件和开关场效应晶体管之间。第三场效应晶体管耦合到光电转换元件，用于复位它。

7. 发明授权

US4032952A Bulk charge transfer semiconductor device 失效
标题翻译：大容量充电传输半导体器件
公开(公告)号：US4032952A
公开(公告)日：1977-06-28
申请号：US347426
申请日：1973-04-03
申请人： Shinya Ohba , Iwao Takemoto , Masaharu Kubo
发明人： Shinya Ohba , Iwao Takemoto , Masaharu Kubo
IPC分类号： H01L29/10 , H01L29/768 , H01L
CPC分类号： H01L29/7685 , H01L29/1062 , H01L29/76833 , H01L29/76841 , Y10S148/08
摘要： In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.

8. 发明授权

US4942474A Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity 失效
标题翻译：具有光电转换元件和其它电路元件的固态成像装置被布置成提供改善的光敏性
公开(公告)号：US4942474A
公开(公告)日：1990-07-17
申请号：US281220
申请日：1988-12-08
申请人： Hajime Akimoto , Shinya Ohba , Toshifumi Ozaki
发明人： Hajime Akimoto , Shinya Ohba , Toshifumi Ozaki
IPC分类号： H04N5/3745
CPC分类号： H04N3/1512
摘要： A solid-state imaging device including a plurality of photoelectric conversion elements (for example, photodiodes) arranged on a semiconductor substrate so as to form a matrix and read-out means for reading out signal charges which are stored in the photodiodes in accordance with incident light, in a predetermined order, is disclosed in which device the read-out means is made up of a plurality of active elements such as a MOS transistor connected to a photodiode, part of the active elements are used as a pixel amplifier for amplifying the signal charge of the photodiode in such a manner that the signal charge is converted into a current or voltage, the output of the pixel amplifier at a time the signal charge of the photodiode is not applied to the input part of the pixel amplifier and the output of the pixel amplifier at a time the signal charge of the photodiode is applied to the input part of the pixel amplifier are separately stored in a pair of storage means, and the outputs of a plurality of pairs of storage means are successively taken out in accordance with a scanning signal.
摘要翻译：一种固态成像装置，其包括布置在半导体衬底上的多个光电转换元件（例如，光电二极管），以形成矩阵和读出装置，用于根据事件读出存储在光电二极管中的信号电荷公开了以预定顺序的光，读出装置由多个有源元件（例如连接到光电二极管的MOS晶体管）构成，其中有源元件的一部分用作像素放大器，用于放大光电二极管的信号电荷使得信号电荷被转换为电流或电压，在光电二极管的信号电荷未被施加到像素放大器的输入部分的时间处的像素放大器的输出和输出在光电二极管的信号电荷施加到像素放大器的输入部分的时间分别存储在一对存储装置中，并且输出的像素放大器的输出根据扫描信号依次取出多对存储装置。

9. 发明授权

US4903122A Solid-state color imaging apparatus for extended definition television (EDTV) 失效
标题翻译：用于扩展清晰度电视（EDTV）的固态彩色成像装置
公开(公告)号：US4903122A
公开(公告)日：1990-02-20
申请号：US142919
申请日：1988-01-12
申请人： Toshifumi Ozaki , Naoki Ozawa , Shinya Ohba , Itaru Mimura
发明人： Toshifumi Ozaki , Naoki Ozawa , Shinya Ohba , Itaru Mimura
IPC分类号： H04N9/04
CPC分类号： H04N9/045
摘要： A high resolution solid-state color imaging apparatus having two-dimensionally disposed photoelectric sensors are arranged in rows and columns each having a color spectral responsivity characteristic such as by employing color filters. Each of the photoelectric sensors is scanned so as to obtain an intensity signal with respect to each row of each field, and wherein scanning of each field is for the same number of rows as that of each frame. Intensity signals are obtained only by the scanned output of each row. Additional intensity signals equal to half the number of said first mentioned intensity signals are obtained by a 2:1 subsampling of bandwidth-restricted signals by a filter along the vertical temporal frequency, thereby realizing high vertical resolution by the photoelectric image sensors of conventional row numbers and having compatibility with a conventional NTSC system and, furthermore, eliminating aliasing distortion.
摘要翻译：具有二维设置的光电传感器的高分辨率固体彩色成像装置以各种具有色谱响应特性的行和列布置，例如通过使用滤色器。每个光电传感器被扫描以获得相对于每个场的每一行的强度信号，并且其中每个场的扫描是与每个帧相同数量的行。强度信号仅通过每行的扫描输出获得。通过沿着垂直时间频率的滤波器对带宽限制信号进行2:1的子采样来获得等于所述第一提到的强度信号数量的一半的附加强度信号，从而通过常规行号的光电图像传感器实现高垂直分辨率并且具有与常规NTSC系统的兼容性，并且还消除了混叠失真。

10. 发明授权

US4814848A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4814848A
公开(公告)日：1989-03-21
申请号：US58825
申请日：1987-06-05
申请人： Hajime Akimoto , Harushisa Ando , Toshifumi Ozaki , Hideyuki Ono , Shinya Ohba , Masaaki Nakai , Norio Koike
发明人： Hajime Akimoto , Harushisa Ando , Toshifumi Ozaki , Hideyuki Ono , Shinya Ohba , Masaaki Nakai , Norio Koike
IPC分类号： H01L27/146 , H01L27/148 , H01L29/78 , H01L27/14 , H01L29/06
CPC分类号： H01L27/14887
摘要： A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.
摘要翻译：一种具有多个第一导电类型的用于光电转换的半导体层的固态成像装置，其设置在第二导电类型的第一半导体层的表面上，该第二半导体层形成在半导体衬底的一个表面的一部分上第一导电型，形成在基板表面的一部分上的第二导电类型的第二半导体层的表面上的用于电荷转移的第一导电类型的半导体层和信号输出装置。第二导电类型的第一半导体层和第二导电类型的第二半导体层以不同的步骤形成，使得第一半导体层被设置为比第二半导体层更深。

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