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1. 发明授权

US08278648B2 Fabrication method for an organic thin film transistor substrate 有权
标题翻译：有机薄膜晶体管基板的制造方法
公开(公告)号：US08278648B2
公开(公告)日：2012-10-02
申请号：US11781109
申请日：2007-07-20
申请人： Tae Young Choi , Bo Sung Kim , Keun Kyu Song , Seung Hwan Cho
发明人： Tae Young Choi , Bo Sung Kim , Keun Kyu Song , Seung Hwan Cho
IPC分类号： H01L29/08 , H01L51/10
CPC分类号： H01L51/0096 , H01L51/0545 , H01L51/102 , H01L51/107 , Y02E10/549
摘要： An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
摘要翻译：公开了一种简化制造工艺的有机薄膜晶体管（TFT）衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。栅极线和数据线限定形成像素电极的像素区域。第一接触部将数据线连接到有机TFT，第二接触部将像素电极连接到有机TFT。钝化层覆盖有机TFT。有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔，用于将第二接触部分连接到有机TFT的第二接触孔，限定位置的第一子组栅绝缘层和限定钝化层的位置的第二子库。

2. 发明授权

US09362513B2 Organic thin film transistor substrate and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US09362513B2
公开(公告)日：2016-06-07
申请号：US11782980
申请日：2007-07-25
申请人： Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song , Tae Young Choi
发明人： Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song , Tae Young Choi
IPC分类号： G02B5/08 , H01L51/05 , H01L27/32
CPC分类号： H01L51/0545 , H01L27/3246 , H01L51/052
摘要： An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.
摘要翻译：一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线交叉的数据线，连接到栅极线和数据线并包括有机半导体层的薄膜晶体管，连接到薄的晶体管的像素电极薄膜晶体管，保护薄膜晶体管的有机保护层，提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。

3. 发明申请

US20080023695A1 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US20080023695A1
公开(公告)日：2008-01-31
申请号：US11782980
申请日：2007-07-25
申请人： Seung Hwan CHO , Bo Sung Kim , Keun Kyu Song , Tae Young Choi
发明人： Seung Hwan CHO , Bo Sung Kim , Keun Kyu Song , Tae Young Choi
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0545 , H01L27/3246 , H01L51/052
摘要： An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.
摘要翻译：一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线交叉的数据线，连接到栅极线和数据线并包括有机半导体层的薄膜晶体管，连接到薄的晶体管的像素电极薄膜晶体管，保护薄膜晶体管的有机保护层，提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。

4. 发明申请

US20080017851A1 FABRICATION METHOD FOR AN ORGANIC THIN FILM TRANSISTOR SUBSTRATE 有权
标题翻译：有机薄膜晶体管基板的制造方法
公开(公告)号：US20080017851A1
公开(公告)日：2008-01-24
申请号：US11781109
申请日：2007-07-20
申请人： Tae Young CHOI , Bo Sung Kim , Keun Kyu Song , Seung Hwan Cho
发明人： Tae Young CHOI , Bo Sung Kim , Keun Kyu Song , Seung Hwan Cho
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0096 , H01L51/0545 , H01L51/102 , H01L51/107 , Y02E10/549
摘要： An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
摘要翻译：公开了一种简化制造工艺的有机薄膜晶体管（TFT）衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。栅极线和数据线限定形成像素电极的像素区域。第一接触部将数据线连接到有机TFT，第二接触部将像素电极连接到有机TFT。钝化层覆盖有机TFT。有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔，用于将第二接触部分连接到有机TFT的第二接触孔，限定位置的第一子组栅绝缘层和限定钝化层的位置的第二子库。

5. 发明授权

US07858971B2 Organic thin film transistor substrate and method of fabricating the same 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US07858971B2
公开(公告)日：2010-12-28
申请号：US11777174
申请日：2007-07-12
申请人： Keun Kyu Song , Seung Hwan Cho , Bo Sung Kim , Young Min Kim , Jung Han Shin
发明人： Keun Kyu Song , Seung Hwan Cho , Bo Sung Kim , Young Min Kim , Jung Han Shin
IPC分类号： H01L51/00
CPC分类号： H01L27/3274 , H01L27/3276 , H01L51/0545 , H01L51/102
摘要： An organic TFT substrate includes a gate line on a substrate, a pixel electrode in a same plane of the gate line, a data line insulated from the gate line, an organic TFT including a gate electrode connected to the gate line, a source electrode connected to the data line and insulated from the gate line, a drain electrode connected to the pixel electrode and insulated from the gate electrode, and an organic semiconductor layer contacting each of the source and drain electrodes, and a gate-insulating layer on the gate line and the gate electrode.
摘要翻译：有机TFT基板包括在基板上的栅极线，栅极线的同一平面中的像素电极，与栅极线绝缘的数据线，包括连接到栅极线的栅电极的有机TFT，连接到源电极与栅极线绝缘的绝缘电极，连接到像素电极并与栅电极绝缘的漏电极以及接触源极和漏极之间的有机半导体层以及栅极线上的栅极绝缘层和栅电极。

6. 发明授权

US08211757B2 Organic thin film transistor substrate and fabrication method therefor 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US08211757B2
公开(公告)日：2012-07-03
申请号：US12871642
申请日：2010-08-30
申请人： Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song
发明人： Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song
IPC分类号： H01L21/00
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558 , Y10S438/939
摘要： An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
摘要翻译：有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线相交并且限定子像素区域的数据线，包括连接到栅极线的栅电极的有机薄膜晶体管，连接到数据的源电极线路，面对源电极的漏极电极和形成源极和漏极之间的沟道的有机半导体层，与栅极线平行的钝化层，用于覆盖有机半导体层和有机半导体层的外围区域，以及用于确定有机半导体层和钝化层的位置的堤绝缘层。

7. 发明申请

US20110053315A1 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD THEREFOR 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US20110053315A1
公开(公告)日：2011-03-03
申请号：US12871642
申请日：2010-08-30
申请人： Seung Hwan CHO , Bo Sung Kim , Keun Kyu Song
发明人： Seung Hwan CHO , Bo Sung Kim , Keun Kyu Song
IPC分类号： H01L51/30
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558 , Y10S438/939
摘要： An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
摘要翻译：有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线相交并且限定子像素区域的数据线，包括连接到栅极线的栅电极的有机薄膜晶体管，连接到数据的源电极线路，面对源电极的漏极电极和形成源极和漏极之间的沟道的有机半导体层，与栅极线平行的钝化层，用于覆盖有机半导体层和有机半导体层的外围区域，以及用于确定有机半导体层和钝化层的位置的堤绝缘层。

8. 发明授权

US07803669B2 Organic thin-film transistor substrate and fabrication method therefor 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US07803669B2
公开(公告)日：2010-09-28
申请号：US11766597
申请日：2007-06-21
申请人： Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song
发明人： Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song
IPC分类号： H01L21/339
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558 , Y10S438/939
摘要： An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
摘要翻译：有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线相交并且限定子像素区域的数据线，包括连接到栅极线的栅电极的有机薄膜晶体管，连接到数据的源电极线路，面对源电极的漏极电极和形成源极和漏极之间的沟道的有机半导体层，与栅极线平行的钝化层，用于覆盖有机半导体层和有机半导体层的外围区域，以及用于确定有机半导体层和钝化层的位置的堤绝缘层。

9. 发明申请

US20080012024A1 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION THEREOF 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US20080012024A1
公开(公告)日：2008-01-17
申请号：US11777174
申请日：2007-07-12
申请人： Keun Kyu SONG , Seung Hwan Cho , Bo Sung Kim , Young Min Kim , Jung Han Shin
发明人： Keun Kyu SONG , Seung Hwan Cho , Bo Sung Kim , Young Min Kim , Jung Han Shin
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/3274 , H01L27/3276 , H01L51/0545 , H01L51/102
摘要： An organic thin film transistor (“TFT”) substrate for facilitating control of the turn-on and turn-off actions of the TFT. The organic TFT substrate includes a gate line on a substrate, a pixel electrode in the same plane as the gate line, a data line insulated from the gate line, an organic TFT including a gate electrode connected to the gate line, a source electrode connected to the data line and insulated from the gate line, a drain electrode connected to the pixel electrode and insulated from the gate electrode, and an organic semiconductor layer contacting each of the source and drain electrodes, and a gate-insulating layer on the gate line and the gate electrode.
摘要翻译：有机薄膜晶体管（“TFT”）基板，用于控制TFT的导通和关断动作。有机TFT基板包括在基板上的栅极线，与栅极线相同的平面中的像素电极，与栅极线绝缘的数据线，包括连接到栅极线的栅电极的有机TFT，连接到源电极与栅极线绝缘的绝缘电极，连接到像素电极并与栅电极绝缘的漏电极以及接触源极和漏极之间的有机半导体层以及栅极线上的栅极绝缘层和栅电极。

10. 发明授权

US08753920B2 Precursor composition for oxide semiconductor and method of manufacturing thin film transistor array panel using the same 有权
标题翻译：使用相同的对氧化物半导体制造薄膜晶体管阵列面板的方法前体组合物
公开(公告)号：US08753920B2
公开(公告)日：2014-06-17
申请号：US13195444
申请日：2011-08-01
申请人： Bo Sung Kim , Doo-Hyoung Lee , Yeon-Taek Jeong , Ki-Beom Lee , Young-Min Kim , Tae-Young Choi , Seon-Pil Jang , Kang-Moon Jo
发明人： Bo Sung Kim , Doo-Hyoung Lee , Yeon-Taek Jeong , Ki-Beom Lee , Young-Min Kim , Tae-Young Choi , Seon-Pil Jang , Kang-Moon Jo
IPC分类号： H01L21/36
CPC分类号： H01L21/02628 , H01L21/02554 , H01L21/02565
摘要： Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn (Formula 1) Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.
摘要翻译：提供一种用于氧化物半导体的前体组合物。用于氧化物半导体的前体组合物包括由金属离子和有机配体形成的金属络合物，其中前体组合物由下式1表示。MAn（式1）这里，M是金属离子，A是包括α-取代的羧酸酯的有机配体，n是自然数。

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