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    • 1. 发明授权
    • Fabrication method for an organic thin film transistor substrate
    • 有机薄膜晶体管基板的制造方法
    • US08278648B2
    • 2012-10-02
    • US11781109
    • 2007-07-20
    • Tae Young ChoiBo Sung KimKeun Kyu SongSeung Hwan Cho
    • Tae Young ChoiBo Sung KimKeun Kyu SongSeung Hwan Cho
    • H01L29/08H01L51/10
    • H01L51/0096H01L51/0545H01L51/102H01L51/107Y02E10/549
    • An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
    • 公开了一种简化制造工艺的有机薄膜晶体管(TFT)衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT,第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔,用于将第二接触部分连接到有机TFT的第二接触孔,限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。
    • 2. 发明授权
    • Organic thin film transistor substrate and method of manufacturing the same
    • 有机薄膜晶体管基板及其制造方法
    • US09362513B2
    • 2016-06-07
    • US11782980
    • 2007-07-25
    • Seung Hwan ChoBo Sung KimKeun Kyu SongTae Young Choi
    • Seung Hwan ChoBo Sung KimKeun Kyu SongTae Young Choi
    • G02B5/08H01L51/05H01L27/32
    • H01L51/0545H01L27/3246H01L51/052
    • An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.
    • 一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。 有机薄膜晶体管基板包括形成在基板上的栅极线,与栅极线交叉的数据线,连接到栅极线和数据线并包括有机半导体层的薄膜晶体管,连接到薄的晶体管的像素电极 薄膜晶体管,保护薄膜晶体管的有机保护层,提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层 与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。
    • 3. 发明申请
    • ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    • 有机薄膜晶体管基板及其制造方法
    • US20080023695A1
    • 2008-01-31
    • US11782980
    • 2007-07-25
    • Seung Hwan CHOBo Sung KimKeun Kyu SongTae Young Choi
    • Seung Hwan CHOBo Sung KimKeun Kyu SongTae Young Choi
    • H01L51/10H01L51/40
    • H01L51/0545H01L27/3246H01L51/052
    • An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.
    • 一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。 有机薄膜晶体管基板包括形成在基板上的栅极线,与栅极线交叉的数据线,连接到栅极线和数据线并包括有机半导体层的薄膜晶体管,连接到薄的晶体管的像素电极 薄膜晶体管,保护薄膜晶体管的有机保护层,提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层 与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。
    • 4. 发明申请
    • FABRICATION METHOD FOR AN ORGANIC THIN FILM TRANSISTOR SUBSTRATE
    • 有机薄膜晶体管基板的制造方法
    • US20080017851A1
    • 2008-01-24
    • US11781109
    • 2007-07-20
    • Tae Young CHOIBo Sung KimKeun Kyu SongSeung Hwan Cho
    • Tae Young CHOIBo Sung KimKeun Kyu SongSeung Hwan Cho
    • H01L51/10H01L51/40
    • H01L51/0096H01L51/0545H01L51/102H01L51/107Y02E10/549
    • An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
    • 公开了一种简化制造工艺的有机薄膜晶体管(TFT)衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT,第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔,用于将第二接触部分连接到有机TFT的第二接触孔,限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。