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1. 发明申请

US20050007015A1 Method of manufacturing laminated structure, laminated structure, display device and display unit 审中-公开
标题翻译：叠层结构，叠层结构，显示装置和显示单元的制造方法
公开(公告)号：US20050007015A1
公开(公告)日：2005-01-13
申请号：US10856277
申请日：2004-05-28
申请人： Seiichi Yokoyama , Takuo Ohwada , Norio Ishikawa
发明人： Seiichi Yokoyama , Takuo Ohwada , Norio Ishikawa
IPC分类号： H05B33/26 , G02F1/1335 , G02F1/1343 , H01L21/28 , H01L21/3205 , H01L21/3213 , H01L21/77 , H01L21/84 , H01L23/52 , H01L27/32 , H01L51/50 , H01L51/52 , H01L51/56 , H05B33/10 , H05B33/00
CPC分类号： G02F1/13439 , G02F1/133553 , H01L27/1214 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5243 , H01L51/5246 , H01L51/5253 , H01L51/5265 , H01L51/56 , H01L2251/5315
摘要： A method of manufacturing a laminated structure capable of being patterned into a favorable shape by preventing side etching is provided. After an adhesive layer made of ITO or the like, a reflective layer made of silver or an alloy including silver, and a barrier layer made of ITO or the like are laminated in order on a substrate with a planarizing layer which is a base layer in between, a mask is formed on the barrier layer, and the adhesive layer, the reflective layer and the barrier layer are etched at once by using the mask to form a laminated structure. As an etching gas, for example, a gas including methane (CH4) is preferable. The laminated structure is used as an anode, and an insulating film, an organic layer including a light-emitting layer and a common electrode as a cathode are laminated in order on the laminated structure so as to form an organic light-emitting device. The laminated structure can be used as a reflective electrode, a reflective film or wiring of a liquid crystal display.
摘要翻译：提供一种通过防止侧面蚀刻来制造能够被图案化成良好形状的层压结构体的方法。在由ITO等制成的粘合层之后，依次将由银制成的反射层或包含银的合金以及由ITO等制成的阻挡层依次叠层在基板上，其中基底层为平坦化层在阻挡层上形成掩模，并且通过使用掩模一次性地蚀刻粘合剂层，反射层和阻挡层以形成层压结构。作为蚀刻气体，例如优选含有甲烷（CH 4）的气体。层叠结构用作阳极，并且在叠层结构上依次层叠绝缘膜，包括发光层和公共电极作为阴极的有机层，以形成有机发光器件。层叠结构可以用作液晶显示器的反射电极，反射膜或布线。

2. 发明授权

US08513140B2 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device 有权
标题翻译：干燥后蚀刻清洗液组合物及制造半导体器件的工艺
公开(公告)号：US08513140B2
公开(公告)日：2013-08-20
申请号：US12924288
申请日：2010-09-23
申请人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
发明人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
IPC分类号： H01L21/302
CPC分类号： C11D11/0047 , C11D3/042 , C11D3/046 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/245 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/32 , C23G1/24 , H01L21/02063 , H01L21/76811
摘要： A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.
摘要翻译：提供干蚀刻后的清洗基板的干燥后蚀刻清洗液组合物，含有至少一种氟化合物，乙醛酸，至少一种有机酸盐和水的清洗液组合物。关于氟化合物，可以使用氟化铵。关于有机酸盐，可以使用草酸铵，酒石酸铵，柠檬酸铵和乙酸铵中的至少一种。

3. 发明授权

US07368064B2 Cleaning solution and manufacturing method for semiconductor device 有权
标题翻译：半导体器件的清洗液及其制造方法
公开(公告)号：US07368064B2
公开(公告)日：2008-05-06
申请号：US11115275
申请日：2005-04-27
申请人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
发明人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
IPC分类号： B44C1/22
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/265 , C11D11/0047 , G03F7/426
摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.
摘要翻译：半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去灰化抗蚀图案使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗液清洗灰化处理后的晶片酸盐为0.1〜3.0质量％。

4. 发明申请

US20060019201A1 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device 审中-公开
公开(公告)号：US20060019201A1
公开(公告)日：2006-01-26
申请号：US11145731
申请日：2005-06-06
申请人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
发明人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
IPC分类号： G03C5/00
CPC分类号： C11D11/0047 , C11D3/042 , C11D3/046 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/245 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/32 , C23G1/24 , H01L21/02063 , H01L21/76811
摘要： A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

5. 发明申请

US20080188085A1 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device 审中-公开
标题翻译：干燥后蚀刻清洗液组合物及制造半导体器件的工艺
公开(公告)号：US20080188085A1
公开(公告)日：2008-08-07
申请号：US12075578
申请日：2008-03-11
申请人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
发明人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
IPC分类号： C23G1/00 , H01L21/461
CPC分类号： C11D11/0047 , C11D3/042 , C11D3/046 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/245 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/32 , C23G1/24 , H01L21/02063 , H01L21/76811
摘要： A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.
摘要翻译：提供了干蚀刻后的清洗基板的干燥后蚀刻清洗液组合物，含有至少一种氟化合物，乙醛酸，至少一种有机酸盐和水的清洗液组合物。关于氟化合物，可以使用氟化铵。关于有机酸盐，可以使用草酸铵，酒石酸铵，柠檬酸铵和乙酸铵中的至少一种。

6. 发明授权

US07943516B2 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07943516B2
公开(公告)日：2011-05-17
申请号：US12076688
申请日：2008-03-21
申请人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
发明人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/265 , C11D11/0047 , G03F7/426
摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.
摘要翻译：半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去灰化抗蚀图案使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗液清洗灰化处理后的晶片酸盐为0.1〜3.0质量％。

7. 发明申请

US20080214002A1 Cleaning solution and manufacturing method for semiconductor device 有权
公开(公告)号：US20080214002A1
公开(公告)日：2008-09-04
申请号：US12076688
申请日：2008-03-21
申请人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
发明人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/265 , C11D11/0047 , G03F7/426
摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

8. 发明申请

US20110014793A1 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device 有权
标题翻译：干燥后蚀刻清洗液组合物及制造半导体器件的工艺
公开(公告)号：US20110014793A1
公开(公告)日：2011-01-20
申请号：US12924288
申请日：2010-09-23
申请人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
发明人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
IPC分类号： H01L21/768 , C23G1/02
CPC分类号： C11D11/0047 , C11D3/042 , C11D3/046 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/245 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/32 , C23G1/24 , H01L21/02063 , H01L21/76811
摘要： A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.
摘要翻译：提供了干蚀刻后的清洗基板的干燥后蚀刻清洗液组合物，含有至少一种氟化合物，乙醛酸，至少一种有机酸盐和水的清洗液组合物。关于氟化合物，可以使用氟化铵。关于有机酸盐，可以使用草酸铵，酒石酸铵，柠檬酸铵和乙酸铵中的至少一种。

9. 发明申请

US20050236362A1 Cleaning solution and manufacturing method for semiconductor device 有权
标题翻译：半导体器件的清洗液及其制造方法
公开(公告)号：US20050236362A1
公开(公告)日：2005-10-27
申请号：US11115275
申请日：2005-04-27
申请人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
发明人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
IPC分类号： H01L21/3065 , B44C1/22 , C09K13/00 , C11D7/08 , C11D7/10 , C11D7/26 , C11D7/32 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/265 , C11D11/0047 , G03F7/426
摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.
摘要翻译：半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去通过灰化抵抗图案。使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗溶液清洗灰化处理后的晶片酸盐为0.1〜3.0质量％。

10. 发明授权

US08105998B2 Liquid composition for removing photoresist residue and polymer residue 有权
标题翻译：用于除去光刻胶残渣和聚合物残渣的液体组合
公开(公告)号：US08105998B2
公开(公告)日：2012-01-31
申请号：US12311951
申请日：2007-10-24
申请人： Takuo Ohwada
发明人： Takuo Ohwada
IPC分类号： C11D7/08
CPC分类号： H01L21/31133 , G03F7/426 , H01L21/02071
摘要： Provided is a liquid composition for, at a low temperature in a short time, removing a photoresist residue and a polymer residue generated in a semiconductor circuit element manufacturing process A residue removing method using such composition is also provided. The composition removes the photoresist residue and/or the polymer residue generated in the manufacturing process of a semiconductor circuit element having a metal wiring. The composition includes a fluorine compound of 0.5-3.0 mass % and water not over 30 mass %, and has a pH of 4 or less.
摘要翻译：本发明提供了一种在短时间内的低温下除去光致抗蚀剂残留物和在半导体电路元件制造方法A中产生的聚合物残渣的液体组合物。还提供了使用这种组合物的残留物去除方法。该组合物除去在具有金属布线的半导体电路元件的制造过程中产生的光致抗蚀剂残留物和/或聚合物残留物。该组合物包含0.5-3.0质量％的氟化合物和不超过30质量％的水，并且具有4以下的pH。

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