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1. 发明授权

US08502285B2 Thin-film transistor and intermediate of thin-film transistor 有权
标题翻译：薄膜晶体管和薄膜晶体管的中间体
公开(公告)号：US08502285B2
公开(公告)日：2013-08-06
申请号：US12737797
申请日：2009-09-24
申请人： Satoru Mori , Shozo Komiyama
发明人： Satoru Mori , Shozo Komiyama
IPC分类号： H01L29/786
CPC分类号： H01L29/458 , H01L29/66765 , H01L29/78621
摘要： This thin-film transistor includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer that is formed so as to come into contact with a barrier film and a Cu layer that is formed on the copper alloy underlayer. One aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance. Another aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 1 mol % to 10 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance.
摘要翻译：该薄膜晶体管包括漏电极膜和源极电极膜，它们都包括复合铜合金膜，该复合铜合金膜包括形成为与阻挡膜接触的铜合金底层和形成的Cu层在铜合金底层上。铜合金底层的一个方面包括含有2mol％至30mol％的Ca，20mol％至50mol％的氧以及Cu和不可避免的杂质作为余量的浓缩层。铜合金底层的另一方面包括含有2摩尔％至30摩尔％的Ca，1摩尔％至10摩尔％的浓度的浓缩层，其中选自由Al，Sn和Sb组成的组中的一种或多种，20mol 50％摩尔的氧，以及Cu和不可避免的杂质作为天平。

2. 发明授权

US08384083B2 Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films 有权
标题翻译：阻挡膜和漏电极与源电极膜之间具有高粘合强度的薄膜晶体管
公开(公告)号：US08384083B2
公开(公告)日：2013-02-26
申请号：US12998283
申请日：2009-09-24
申请人： Satoru Mori , Shozo Komiyama
发明人： Satoru Mori , Shozo Komiyama
IPC分类号： H01L29/786
CPC分类号： H01L29/458 , H01L29/66765
摘要： This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.
摘要翻译：该薄膜晶体管包括阻挡膜和电极膜之间的粘合强度增强膜。每个粘合强度增强膜由两个区域组成，包括（a）在电极膜侧形成的纯铜区域，和（b）形成在与阻挡膜接触的界面部分中的成分浓缩区域，并且包括Cu，Ca，氧和Si作为组分。在组分浓缩区域的厚度方向上的Ca和氧的浓度分布中，含Ca峰的Ca的最大含量为5〜20at％，含氧量的最大含量峰分别在30至50at％的范围内。

3. 发明申请

US20110193088A1 THIN-FILM TRANSISTOR HAVING HIGH ADHESIVE STRENGTH BETWEEN BARRIER FILM AND DRAIN ELECTRODE AND SOURCE ELECTRODE FILMS 有权
标题翻译：薄膜和漏极电极和源电极膜之间具有高粘合强度的薄膜晶体管
公开(公告)号：US20110193088A1
公开(公告)日：2011-08-11
申请号：US12998283
申请日：2009-09-24
申请人： Satoru Mori , Shozo Komiyama
发明人： Satoru Mori , Shozo Komiyama
IPC分类号： H01L29/786
CPC分类号： H01L29/458 , H01L29/66765
摘要： This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.
摘要翻译：该薄膜晶体管包括阻挡膜和电极膜之间的粘合强度增强膜。每个粘合强度增强膜由两个区域组成，包括（a）在电极膜侧形成的纯铜区域，和（b）形成在与阻挡膜接触的界面部分中的成分浓缩区域，并且包括Cu，Ca，氧和Si作为组分。在组分浓缩区域的厚度方向上的Ca和氧的浓度分布中，含Ca峰的Ca的最大含量为5〜20at％，含氧量的最大含量峰分别在30至50at％的范围内。

4. 发明申请

US20110309444A1 THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER 有权
标题翻译：具有作为构成层的障碍层的薄膜晶体管和用于形成障碍层的溅射膜的铜合金溅射靶
公开(公告)号：US20110309444A1
公开(公告)日：2011-12-22
申请号：US13138159
申请日：2009-10-22
申请人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Satoru Mori
发明人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Satoru Mori
IPC分类号： H01L29/772
CPC分类号： H01L29/458 , C22C9/01 , C23C14/165 , C23C14/3414 , H01L29/4908 , H01L29/66765
摘要： This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.
摘要翻译：该Cu合金溅射靶的原子百分比：Al：1〜10％ Ca：0.1〜2％，余量为Cu和1％以下不可避免的杂质。该薄膜晶体管包括：通过粘合层接合到玻璃基板的表面的栅电极层; 栅极绝缘层; Si半导体层; n型Si半导体层; 阻挡层; 由漏极电极层和源电极层构成的导线层，两者都相互分开; 钝化层; 以及透明电极层，其中通过使用Cu合金溅射靶在氧化气氛下通过溅射形成阻挡层。

5. 发明授权

US5124311A Structure of ceramic superconductive wiring and process of fabrication thereof 失效
标题翻译：陶瓷超导布线结构及其制造工艺
公开(公告)号：US5124311A
公开(公告)日：1992-06-23
申请号：US362466
申请日：1989-05-30
申请人： Satoru Mori , Hideaki Yoshida , Takuo Takeshita , Yoshio Kanda
发明人： Satoru Mori , Hideaki Yoshida , Takuo Takeshita , Yoshio Kanda
IPC分类号： H01L23/498 , H01L39/24
CPC分类号： H01L39/247 , H01L23/49888 , H01L2924/0002 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/24917 , Y10T428/31678 , Y10T428/31692
摘要： There is disclosed the structure of a superconductive wiring fabricated on an insulating substrate comprising a conductive pattern having at least one wiring strip of a superconductive ceramic formed on the insulating substrate and a protective film covering the wiring pattern and formed of a basic oxide, the basic oxide hardly reacts with the superconductive ceramic because of the fact that most of the superconductive ceramics are bases, then the wiring strip is allowed to stay in the superconductive state for a prolonged period of time.

6. 发明授权

US07250042B2 Thrombus suction catheter with improved suction and crossing 有权
标题翻译：血栓抽吸导管具有改善的吸入和交叉
公开(公告)号：US07250042B2
公开(公告)日：2007-07-31
申请号：US10761806
申请日：2004-01-22
申请人： Yuichi Kataishi , Satoru Mori , Yoshihiko Sano , Toshihiro Kikuchi , Takaaki Isshiki
发明人： Yuichi Kataishi , Satoru Mori , Yoshihiko Sano , Toshihiro Kikuchi , Takaaki Isshiki
IPC分类号： A61M25/00
CPC分类号： A61B17/3207 , A61B17/22 , A61B90/39 , A61B2017/22039 , A61B2217/005 , A61M1/008 , A61M25/0029 , A61M25/0032 , A61M25/0068 , A61M25/008
摘要： A thrombus suction catheter which is a tube having a distal end opening formed by an angled cut surface. In the distal end opening, at least a part on the proximal end side of the cut surface is formed in a concave shape in an angled direction, and the distal end side of the cut surface is formed to be flat and flexible. With the distal end configuration, suction and crossing are significantly improved.
摘要翻译：一种血栓抽吸导管，其是具有由倾斜切割表面形成的远端开口的管。在前端开口中，切割面的基端侧的至少一部分在成角度的方向上形成为凹形，并且切割面的前端侧形成为平坦且柔软的。通过远端构造，抽吸和交叉显着改善。

7. 外观设计

USD540468S1 Catheter 有权
公开(公告)号：USD540468S1
公开(公告)日：2007-04-10
申请号：US29237266
申请日：2005-08-30
申请人： Satoru Mori
设计人： Satoru Mori

8. 发明申请

US20070053786A1 Phase change film for semiconductor nonvolatile memory and sputtering target for forming phase change film 审中-公开
标题翻译：用于半导体非易失性存储器的相变膜和用于形成相变膜的溅射靶
公开(公告)号：US20070053786A1
公开(公告)日：2007-03-08
申请号：US10572216
申请日：2004-09-08
申请人： Sohei Nonaka , Kei Kinoshita , Satoru Mori
发明人： Sohei Nonaka , Kei Kinoshita , Satoru Mori
IPC分类号： C22C28/00
CPC分类号： C23C14/14 , C23C14/3414 , H01L45/06 , H01L45/144 , H01L45/1625
摘要： A phase change film for a semiconductor nonvolatile memory and a sputtering target for forming the phase change film. The phase change film for a semiconductor nonvolatile memory and the sputtering target for forming the phase change film have a composition containing 10 to 25 atomic % of Ge, 10 to 25 atomic % of Sb, 1 to 10 atomic % of Ga, and 10 atomic % or less of B, Al, C, Si and lanthanoid elements, with the balance being Te and inevitable impurities.
摘要翻译：用于半导体非易失性存储器的相变膜和用于形成相变膜的溅射靶。用于半导体非易失性存储器的相变膜和用于形成相变膜的溅射靶具有包含10至25原子％的Ge，10至25原子％的Sb，1至10原子％的Ga和10原子的组成 B，Al，C，Si和镧系元素的％以下，余量为Te和不可避免的杂质。

9. 发明授权

US08147427B2 Guidewires twist releasing device 有权
标题翻译：导丝扭转释放装置
公开(公告)号：US08147427B2
公开(公告)日：2012-04-03
申请号：US12661665
申请日：2010-03-22
申请人： Shinsuke Nanto , Satoru Mori
发明人： Shinsuke Nanto , Satoru Mori
IPC分类号： A61M25/00
CPC分类号： A61M25/01 , A61M25/0067 , A61M25/0069 , A61M25/09 , A61M25/09041 , A61M2025/0183 , A61M2025/0188 , A61M2025/09116 , G06Q20/20 , G06Q20/209
摘要： To provide a means capable easily releasing twist of two or more guidewires passed through a guiding catheter without pulling out the guidewires. A twist releasing apparatus has a shaft, a first tube formed at the tip of the shaft and has a first lumen through which two or more guidewires can be passed, a second tube disposed through a gap at the tip side in the axis direction relative to the first tube and has a second lumen through the two or more guidewires can be passed, and a connection portion for connecting the first tube and the second tube so that the two or more guidewires can be passed through the first lumen and the second lumen. The second tube has a slit that is formed in an axis direction and can be elastically deformed. The connection portion can be elastically deformed into a curved shape in the axis direction.
摘要翻译：提供能够容易地释放通过导向导管而不拉出导线的两根或多根导线的扭转的装置。扭转释放装置具有轴，第一管形成在所述轴的尖端处，并且具有第一管腔，通过所述第一管腔可以通过两个或更多个引导线;第二管，其相对于所述轴线方向设置在所述尖端侧的轴向方向上的间隙可以通过第一管并且具有通过两个或更多个导丝的第二管腔，以及用于连接第一管和第二管的连接部分，使得两个或更多个导丝可以穿过第一管腔和第二管腔。第二管具有沿轴向形成并且可以弹性变形的狭缝。连接部能够在轴向上弹性变形为弯曲形状。

10. 发明申请

US20100286565A1 Guidewires twist releasing device 有权
标题翻译：导丝扭转释放装置
公开(公告)号：US20100286565A1
公开(公告)日：2010-11-11
申请号：US12661665
申请日：2010-03-22
申请人： Shinsuke Nanto , Satoru Mori
发明人： Shinsuke Nanto , Satoru Mori
IPC分类号： A61M25/09
CPC分类号： A61M25/01 , A61M25/0067 , A61M25/0069 , A61M25/09 , A61M25/09041 , A61M2025/0183 , A61M2025/0188 , A61M2025/09116 , G06Q20/20 , G06Q20/209
摘要： To provide a means capable easily releasing twist of two or more guidewires passed through a guiding catheter without pulling out the guidewires. A twist releasing apparatus has a shaft, a first tube formed at the tip of the shaft and has a first lumen through which two or more guidewires can be passed, a second tube disposed through a gap at the tip side in the axis direction relative to the first tube and has a second lumen through the two or more guidewires can be passed, and a connection portion for connecting the first tube and the second tube so that the two or more guidewires can be passed through the first lumen and the second lumen. The second tube has a slit that is formed in an axis direction and can be elastically deformed. The connection portion can be elastically deformed into a curved shape in the axis direction.
摘要翻译：提供能够容易地释放通过导向导管而不拉出导线的两根或多根导线的扭转的装置。扭转释放装置具有轴，第一管形成在所述轴的尖端处，并且具有第一管腔，通过所述第一管腔可以通过两个或更多个引导线;第二管，其相对于所述轴线方向设置在所述尖端侧的轴向方向上的间隙可以通过第一管并且具有通过两个或更多个导丝的第二管腔，以及用于连接第一管和第二管的连接部分，使得两个或更多个导丝可以穿过第一管腔和第二管腔。第二管具有沿轴向形成并且可以弹性变形的狭缝。连接部能够在轴向上弹性变形为弯曲形状。

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