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1. 发明授权

US11261540B2 Method of controlling convection patterns of silicon melt and method of manufacturing silicon single crystal 有权
公开(公告)号：US11261540B2
公开(公告)日：2022-03-01
申请号：US16976256
申请日：2019-02-27
申请人： SUMCO CORPORATION
发明人： Naoki Matsushima , Ryusuke Yokoyama , Hideki Sakamoto , Wataru Sugimura
IPC分类号： C30B30/04 , C30B15/10 , C30B15/22 , C30B15/30 , C30B29/06
摘要： A method of controlling a convection pattern of a silicon melt includes applying a horizontal magnetic field having an intensity of 0.2 tesla or more to the silicon melt in a rotating quartz crucible to fix a direction of a convection flow in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt, the horizontal magnetic field being applied so that a central magnetic field line passes through a point horizontally offset from a center axis of the quartz crucible by 10 mm or more.

2. 发明授权

US11078595B2 Method of producing silicon single crystal ingot and silicon single crystal ingot 有权
公开(公告)号：US11078595B2
公开(公告)日：2021-08-03
申请号：US16477003
申请日：2018-01-11
申请人： SUMCO CORPORATION
发明人： Masataka Hourai , Wataru Sugimura , Toshiaki Ono , Toshiyuki Fujiwara
IPC分类号： C30B15/20 , C01B33/02 , C30B29/06
摘要： Provided is a method of producing a high resistance n-type silicon single crystal ingot with small tolerance margin on resistivity in the crystal growth direction, which is suitably used in a power device. In the method of producing a silicon single crystal ingot using Sb or As as an n-type dopant, while a silicon single crystal ingot is pulled up, the amount of the n-type dopant being evaporated from a silicon melt per unit solidification ratio is kept within a target evaporation amount range per unit solidification ratio by controlling one or more pulling condition values including at least one of the pressure in a chamber, the flow volume of Ar gas, and a gap between a guide portion and the silicon melt.

3. 发明授权

US11781242B2 Method for controlling convection pattern of silicon melt, method for producing silicon single crystals, and device for pulling silicon single crystals 有权
公开(公告)号：US11781242B2
公开(公告)日：2023-10-10
申请号：US16971441
申请日：2019-02-27
申请人： SUMCO CORPORATION
发明人： Hideki Sakamoto , Wataru Sugimura , Ryusuke Yokoyama , Naoki Matsushima
IPC分类号： C30B29/06 , C30B15/20 , C30B30/04 , C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , C30B30/04
摘要： A convection pattern control method includes: heating a silicon melt in a quartz crucible using a heating portion; and applying a horizontal magnetic field to the silicon melt in the quartz crucible being rotated. In the heating of the silicon, the silicon melt is heated with the heating portion whose heating capacity differs on both sides across an imaginary line passing through a center axis of the quartz crucible and being in parallel to a central magnetic field line of the horizontal magnetic field when the quartz crucible is viewed from vertically above. In the applying of the horizontal magnetic field, the horizontal magnetic field of 0.2 tesla or more is applied to fix a direction of a convection flow in a single direction in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt.

4. 发明授权

US10858753B2 Method and apparatus for manufacturing silicon single crystal 有权
公开(公告)号：US10858753B2
公开(公告)日：2020-12-08
申请号：US16303923
申请日：2017-05-09
申请人： SUMCO CORPORATION
发明人： Wataru Sugimura , Ryusuke Yokoyama , Mitsuaki Hayashi
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04
摘要： A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

5. 发明授权

US11885038B2 Method of estimating convection pattern of silicon melt, method of estimating oxygen concentration of silicon single crystal, method of manufacturing silicon single crystal, and raising device of silicon single crystal 有权
公开(公告)号：US11885038B2
公开(公告)日：2024-01-30
申请号：US16975563
申请日：2019-02-27
申请人： SUMCO CORPORATION
发明人： Wataru Sugimura , Ryusuke Yokoyama , Toshiyuki Fujiwara , Toshiaki Ono
IPC分类号： C30B15/26 , C30B15/16 , C30B29/06 , C30B30/04
CPC分类号： C30B15/26 , C30B15/16 , C30B29/06 , C30B30/04
摘要： A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.

6. 发明授权

US11441238B2 Silicon monocrystal manufacturing method and silicon monocrystal pulling device 有权
公开(公告)号：US11441238B2
公开(公告)日：2022-09-13
申请号：US16971901
申请日：2019-02-27
申请人： SUMCO CORPORATION
发明人： Ryusuke Yokoyama , Hideki Sakamoto , Wataru Sugimura
IPC分类号： C30B30/04 , C30B15/10 , C30B15/20 , C30B29/06
摘要： A method of manufacturing monocrystalline silicon by flowing inert gas in a chamber, applying horizontal magnetic field to a silicon melt in a quartz crucible, and pulling up monocrystalline silicon includes: forming a flow distribution of a flow of the inert gas flowing between a lower end of a heat shield and a surface of the silicon melt in the quartz crucible to be plane asymmetric with respect to a plane defined by a crystal pull-up axis of the pull-up device and an application direction of the horizontal magnetic field and rotationally asymmetric with respect to the crystal pull-up axis: maintaining the formed plane asymmetric and rotationally asymmetric flow distribution in a magnetic-field-free state until a silicon material in the quartz crucible is completely melted; and applying the horizontal magnetic field to the completely melted silicon material and starting pulling up the monocrystalline silicon.

7. 发明授权

US11186921B2 Method for controlling convection pattern of silicon melt and method for producing monocrystalline silicon 有权
公开(公告)号：US11186921B2
公开(公告)日：2021-11-30
申请号：US16975884
申请日：2019-02-27
申请人： SUMCO CORPORATION
发明人： Ryusuke Yokoyama , Wataru Sugimura
IPC分类号： C30B15/20 , C30B29/06 , C30B30/04
摘要： A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.

8. 发明授权

US10415150B2 Apparatus for manufacturing silicon single crystal and melt inlet pipe of the same 有权
公开(公告)号：US10415150B2
公开(公告)日：2019-09-17
申请号：US15677368
申请日：2017-08-15
申请人： SUMCO CORPORATION
发明人： Mitsuaki Hayashi , Wataru Sugimura , Ippei Shimozaki
IPC分类号： C30B15/02 , C30B35/00 , C30B15/04 , C30B15/12 , C30B15/10 , C30B29/06
摘要： An apparatus for manufacturing a silicon single crystal is provided. The apparatus comprises a chamber (11), a quarts crucible (21) provided in the chamber so as to be rotatable and movable upward and downward and store a silicon melt, a first heater (25) for melting a silicon raw material stored in the crucible, and a pulling mechanism (32) provided in the chamber so as to be rotatable and movable upward and downward. The pulling mechanism has a lower end to which a seed crystal (S) is attached. The seed crystal is to be dipped in the silicon melt in the crucible and pulled upward for growing a silicon single crystal by a Czochralski method. The apparatus further comprises a melt supplying mechanism (50) for supplying an additional silicon melt to the silicon melt in the crucible from external of the chamber. The melt supplying mechanism includes a melt inlet pipe (51) disposed at an inclination angle θ1 of 50° to 80° with respect to the melt surface of the silicon melt and a melt generating mechanism (54) for supplying the additional silicon melt (M) to an opening part (512) of a base end of the melt inlet pipe. The melt inlet pipe has a tip end provided with an opening part (511). The opening part of the tip end has an annular surface inclined at an angle θ2 with respect to a direction orthogonal to the axis of the melt inlet pipe. The annular surface has a vertically lower side (511a) and a vertically upper side (511b). The vertically lower side is located nearer to the tip end in the axis direction than the vertically upper side.

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