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1. 发明授权

US3306703A Method for the production of semiconductor dendrites 失效
标题翻译：半导体树枝状生产方法
公开(公告)号：US3306703A
公开(公告)日：1967-02-28
申请号：US21650162
申请日：1962-08-13
申请人： SIEMENS AG
发明人： HANSJURGEN DERSIN , ERHARD SIRTL
IPC分类号： C30B25/00
CPC分类号： C30B25/005 , C30B29/00
摘要： A chemical compound of Group III and V such as gallium arsenide is heated to above 1000 DEG K. in the presence of iodine or bromine vapour in a closed vessel and one end of the vessel opposite the charge of gallium arsenide is cooled to at least 100 DEG C. below the temperature of the charge so as to form dendritic crystals of gallium arsenide.

2. 发明授权

US3290181A Method of producing pure semiconductor material by chemical transport reaction using h2s/h2 system 失效
公开(公告)号：US3290181A
公开(公告)日：1966-12-06
申请号：US38625864
申请日：1964-07-30
申请人： SIEMENS AG
发明人： ERHARD SIRTL
IPC分类号： C01B31/30 , C01B31/36 , C01B33/02 , C01G1/12 , C22C1/00 , H01L21/00
CPC分类号： C01B33/02 , C01B32/90 , C01B32/956 , C01G1/12 , C22C1/007 , H01L21/00 , Y10S148/052 , Y10S148/135 , Y10S438/933

3. 发明授权

US3160476A Process of producing compact boron, particularly in monocrystalline form 失效
标题翻译：生产紧密硼，特别是单晶形式的方法
公开(公告)号：US3160476A
公开(公告)日：1964-12-08
申请号：US17749662
申请日：1962-03-05
申请人： SIEMENS AG
发明人： ERHARD SIRTL
IPC分类号： C01B35/02 , C23C16/28 , C30B25/00 , C30B25/02
CPC分类号： C30B25/00 , C01B35/023 , C23C16/28 , C30B25/02 , C30B29/02
摘要： Monocrystalline boron is prepared by passing a stream of reaction gas containing a halogen-containing boron compound and purified hydrogen over a heated carrier element, whereby boron is deposited on said carrier, and adding initially to the reaction gas a hydrogen halide which displaces the teaction equilibrium in favour of combined boron, in such a proportion that the temperature T0 at which boron removal from the carrier by reverse reaction commences, is disposed at most 200 DEG C. below the temperature T at which the boron liberation reaction is carried out and the boron liberation is completely stopped below the temperature T0. The hydrogen halide added is preferably the one formed during the reaction, e.g. HCl or HBr and the boron compounds may be BCl3, BClBr2 or BBr2Cl. The carrier is rod shaped or filamentary and may be of moulded boron, e.g. presintered boron powder or monocrystalline boron and is crystallographically oriented so that the rod axis lies in a crystal alignment which corresponds to a determined preferential growth alignment. The carrier is heated electrically to a temperature not below 1200 DEG K, a low temperature modification of boron being formed at 1300 DEG K and a high temperature form at 1700 DEG K. The surface may be cleaned by etching and purifying in a high vacuum, or by heating in a current of pure H2 and the vessel flushed out with a H2 flow containing at least 10 mol. % of hydrogen halide. Alternatively the oxide film is a multiple of the layer thickness of the oxide film is removed by heating in a gas mixture containing a hydrogen halide in such quantity that neither B nor Si (impurity) are deposited and thereafter reducing the supply of halide so that boron only is deposited. The temperature of the carrier and the mol. ratios of the reaction gases are adjusted so that the temperature lies below the minimum separation temperature of silicon but above that of boron. If required, the quantity of silicon deposited may be controlled by varying the hydrogen halide concentration. The atomic ratio of B : H is preferably at least 2%, e.g. the mol. ratio of BCl3 : H2 may be 1 : 10 and the maximum Si : B ratio is 0.1%. The reaction gas may be prepared by passing pure hydrogen through an evaporation vessel containing a liquid halogen containing boron compound, e.g BCl3, some of which is converted to hydrogen halide by water and using the hydrogen leaving the vessel as reaction gas. Waste gas after passage over the carrier may be reused for a second carrier element. Doped boron may be prepared using elements of Group II and IV in the form of their gaseous compounds, e.g. beryllium halides and compounds of carbon and silicon. The reaction chamber may be lined with corundum and the remaining parts made of glasses using aluminium borate in combination with quartz-like AlPO4, BPO4.

4. 发明授权

US3344002A Method of producing epitaxial layers on semiconductor monocrystals 失效
标题翻译：在半导体单晶上生产外延层的方法
公开(公告)号：US3344002A
公开(公告)日：1967-09-26
申请号：US23920062
申请日：1962-11-21
申请人： SIEMENS AG
发明人： ERHARD SIRTL , HANSJURGEN DERSIN
IPC分类号： C30B25/00 , H01L21/00 , H01L21/205
CPC分类号： H01L21/02546 , C30B25/005 , C30B29/48 , H01L21/00 , H01L21/0262 , Y10S117/902 , Y10S117/903
摘要： Dendritic crystals grown by the process of Specification 993,701 have an epitaxial deposition on the 111 surfaces by reduction of the temperature of the charge in the heated reaction vessel to give a temperature gradient which favours epitaxial growth, the layers so built up may result in a different conductivity type by altering the concentration of the doping material. Thus, gallium arsenide dendrites may have epitaxial layers deposited in the presence of zinc to produce p-type conductivity. By varying the temperature of sections of a tube containing doping material and gallium arsenide, successive layers of different conductivity may be built up. Reference is also made to formation of epitaxial layers on AIIBVI and AIIIBV compounds and on Group IV elements.

5. 发明授权

US3340110A Method for producing semiconductor devices 失效
公开(公告)号：US3340110A
公开(公告)日：1967-09-05
申请号：US52348766
申请日：1966-01-21
申请人： SIEMENS AG
发明人： JOSEF GRABMAIER , ERHARD SIRTL
IPC分类号： C23C16/00 , C23C16/22 , C30B23/00 , H01L21/00 , H01L21/205 , H01L29/06
CPC分类号： H01L21/0262 , C23C16/00 , C23C16/22 , C30B23/00 , H01L21/00 , H01L21/02529 , H01L21/02532 , H01L29/06 , Y10S117/90 , Y10S438/905

6. 发明授权

US3120451A Pyrolytic method for precipitating silicon semiconductor material 失效
标题翻译：用于沉淀硅半导体材料的热解法
公开(公告)号：US3120451A
公开(公告)日：1964-02-04
申请号：US11243461
申请日：1961-05-24
申请人： SIEMENS AG
发明人： OTTO SCHMIDT , ERHARD SIRTL
IPC分类号： C01B33/035 , C22B41/00 , C23C16/24
CPC分类号： C01B33/035 , C22B41/00 , C23C16/24

7. 发明授权

US3328199A Method of producing monocrystalline silicon of high purity 失效
标题翻译：高纯度单晶硅的制造方法
公开(公告)号：US3328199A
公开(公告)日：1967-06-27
申请号：US30926463
申请日：1963-09-16
申请人： SIEMENS AG
发明人： ERHARD SIRTL
IPC分类号： C01B33/02 , C30B25/02
CPC分类号： C30B29/06 , C01B33/02 , C30B25/02 , Y10S438/974

8. 发明授权

US3291657A Epitaxial method of producing semiconductor members using a support having varyingly doped surface areas 失效
标题翻译：使用具有不同掺杂表面积的载体制造半导体部件的外延方法
公开(公告)号：US3291657A
公开(公告)日：1966-12-13
申请号：US30103563
申请日：1963-08-09
申请人： SIEMENS AG
发明人： ERHARD SIRTL
IPC分类号： C23C16/00 , C30B25/02 , H01L21/00 , H01L21/205
CPC分类号： C30B25/02 , C23C16/00 , H01L21/00 , H01L21/02381 , H01L21/02392 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/0262 , Y10S148/052 , Y10S148/072 , Y10S148/148 , Y10S252/951 , Y10S438/925

9. 发明授权

US3243319A Method of producing mesa transistors and other semiconductor devices having portions f reduced cross section 失效
标题翻译：制造台面晶体管和其他半导体器件的方法，其具有减小截面的部分
公开(公告)号：US3243319A
公开(公告)日：1966-03-29
申请号：US30186363
申请日：1963-08-13
申请人： SIEMENS AG
发明人： JOSEF GRABMAIER , ERHARD SIRTL
IPC分类号： H01L21/00 , H01L21/18
CPC分类号： H01L21/185 , H01L21/00 , Y10S148/052 , Y10S438/942

10. 发明授权

US3192083A Method for controlling donor and acceptor impurities on gaseous vapor through the use of hydrogen halide gas 失效
标题翻译：通过使用卤化氢气体来控制气体蒸气上的供体和受体杂质的方法
公开(公告)号：US3192083A
公开(公告)日：1965-06-29
申请号：US19482962
申请日：1962-05-15
申请人： SIEMENS AG
发明人： ERHARD SIRTL
IPC分类号： C30B25/02 , H01L21/00 , H01L21/205 , H01L29/00
CPC分类号： C30B29/06 , C30B25/02 , C30B29/08 , H01L21/00 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/00 , Y10S438/925

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