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1. 发明公开

US20240290778A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240290778A1
公开(公告)日：2024-08-29
申请号：US18656653
申请日：2024-05-07
申请人： ROHM CO., LTD.
发明人： Tadao YUKI , Satoshi TANAKA
IPC分类号： H01L27/02 , H01L27/06 , H01L29/78
CPC分类号： H01L27/0296 , H01L27/0255 , H01L27/0629 , H01L29/7817
摘要： A semiconductor device includes, as each of a first electrostatic protection diode, a second electrostatic protection diode, and a third electrostatic protection diode, a lateral NDMOS transistor thyristorized by having a p-type dopant region formed in its drain. For example, the anode of the first electrostatic protection diode is connected to a first signal terminal; the anode of the second electrostatic protection diode is connected to a second signal terminal; and the anode of the third electrostatic protection diode is connected to a ground terminal. The cathodes of the first, second, and third electrostatic protection diodes are connected together.

2. 发明公开

US20240006410A1 PROTECTION ELEMENT 审中-公开
公开(公告)号：US20240006410A1
公开(公告)日：2024-01-04
申请号：US18255726
申请日：2021-11-29
申请人： ROHM CO., LTD.
发明人： Satoshi TANAKA
IPC分类号： H01L27/088
CPC分类号： H01L27/088
摘要： This protection element includes first to fourth switching elements, and a back gate guard ring surrounding the first to fourth switching elements. The back gate guard ring includes a first section, a second section, and a third section. The first section is disposed adjacent to a side of the first switching element opposite to the second switching element. The second section is disposed between the second switching element and the third switching element. The third section is disposed adjacent to a side of the fourth switching element opposite to the third switching element. A source of the first switching element is disposed closer to the first section than a gate of the first switching element. A source of the second switching element is disposed closer to the second section than a gate of the second switching element. A source of the third switching element is disposed closer to the second section than a gate of the third switching element.

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