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1. 发明授权

US5828070A System and method for cooling workpieces processed by an ion implantation system 失效
标题翻译：用于冷却由离子注入系统处理的工件的系统和方法
公开(公告)号：US5828070A
公开(公告)日：1998-10-27
申请号：US756972
申请日：1996-11-26
申请人： Adam A. Brailove , Peter H. Rose , Julian G. Blake , Zhongmin Yang , Kenneth H. Purser
发明人： Adam A. Brailove , Peter H. Rose , Julian G. Blake , Zhongmin Yang , Kenneth H. Purser
IPC分类号： H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/677 , H01L21/683 , G01N21/00 , G21K5/10
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： A system and method for conductively and/or convectively transferring heat away from a workpiece that has been processed by a processing system, such as an ion implantation system. The conductive transfer of heat from the workpiece is effectuated by disposing the workpiece in relatively close proximity with a floor of a loadlock, which is maintained at a relatively cool temperature. The chamber pressure is disposed at a selected pressure by a pressure regulator and a vacuum pressure is applied to the backside of the workpiece closest to draw the workpiece into contact with the chamber floor, thereby effecting heat transfer from the workpiece to the cooling surface.
摘要翻译：一种用于导电地和/或对流地将热量从已经由处理系统例如离子注入系统处理的工件传送的系统和方法。通过将工件放置在相对靠近装载锁的地板并保持在相对较冷的温度下，来实现来自工件的导热传递。腔室压力通过压力调节器设置在选定的压力下，并且真空压力施加到最接近工件的工件的背面，以使工件与室底板接触，从而实现从工件到冷却表面的热传递。

2. 发明授权

US5825038A Large area uniform ion beam formation 失效
标题翻译：大面积均匀的离子束形成
公开(公告)号：US5825038A
公开(公告)日：1998-10-20
申请号：US756656
申请日：1996-11-26
申请人： Julian G. Blake , Kenneth H. Purser , Adam A. Brailove , Peter H. Rose , Barbara J. Hughey
发明人： Julian G. Blake , Kenneth H. Purser , Adam A. Brailove , Peter H. Rose , Barbara J. Hughey
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/083
摘要： A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.
摘要翻译：快速有效地处理大量平板显示器的高通量离子注入系统。离子注入系统具有产生离子流的离子室，具有用于将离子流成形为带状束的高纵横比的细长槽的等离子体电极，以及用于将离子流引向工件的电极组件。等离子体电极可以包括具有基本上彼此平行取向的多个细长狭缝的分离提取系统。离子注入系统还可以具有用于使离子流均匀化的扩散系统。各种示例性扩散系统包括具有开口阵列，扩散磁体，扩散电极和抖动磁体的有孔板。

3. 发明授权

US5811823A Control mechanisms for dosimetry control in ion implantation systems 失效
标题翻译：离子注入系统中剂量测定控制的控制机制
公开(公告)号：US5811823A
公开(公告)日：1998-09-22
申请号：US757726
申请日：1996-11-26
申请人： Julian G. Blake , Piero Sferlazzo , Peter H. Rose , Adam A. Brailove
发明人： Julian G. Blake , Piero Sferlazzo , Peter H. Rose , Adam A. Brailove
IPC分类号： H01J37/04 , C23C14/48 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/265 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67739 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.
摘要翻译：快速有效地处理大量平板显示器的高通量离子注入系统。离子注入系统具有离子源，电极组件，安装工件的平台和离子束测量结构。与电极组件结合的离子源形成带状束形状的离子束。离子束的形成和定向使得离子束的第一部分处理工件，而离子束的第二部分由束测量结构同时测量。控制器从离子束参数获取束测量结构的数据，然后根据数据产生离子注入系统的控制信号。

4. 发明授权

US5793050A Ion implantation system for implanting workpieces 失效
公开(公告)号：US5793050A
公开(公告)日：1998-08-11
申请号：US756133
申请日：1996-11-26
申请人： Peter H. Rose , Julian G. Blake , Adam A. Brailove , Zhongmin Yang , Richard F. McRay , Barbara J. Hughey
发明人： Peter H. Rose , Julian G. Blake , Adam A. Brailove , Zhongmin Yang , Richard F. McRay , Barbara J. Hughey
IPC分类号： H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67745 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.

5. 发明授权

US5751003A Loadlock assembly for an ion implantation system 失效
标题翻译：用于离子注入系统的负载锁组件
公开(公告)号：US5751003A
公开(公告)日：1998-05-12
申请号：US779901
申请日：1997-01-07
申请人： Peter H. Rose , Adam A. Brailove
发明人： Peter H. Rose , Adam A. Brailove
IPC分类号： C23C14/48 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/20 , H01J37/30 , H01J37/317 , H01L21/00 , H01L21/265 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/3171 , H01L21/67069 , H01L21/67201 , H01L21/67739 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： The present invention provides a loadlock assembly for a high throughput ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The loadlock assembly increases the throughput of the implantation system by continuously cycling workpieces through the process chamber, thus increasing the system's throughput. The loadlock assembly includes a plurality of loadlock stacking elements that are axially positioned relative to each other to form a stacked array of loadlocks. Additionally, the loadlocks of the array are configured to nest with an adjacent loadlock to form a stackable and nestable loadlock assembly.
摘要翻译：本发明提供一种用于高通量离子注入系统的负载锁组件，其快速且有效地处理诸如平板显示器之类的大量工件。负载锁定组件通过连续地将工件循环通过处理室来增加植入系统的吞吐量，从而增加系统的生产量。负载锁组件包括多个负载锁定堆叠元件，其相对于彼此轴向定位，以形成堆叠的负荷锁定阵列。此外，阵列的负载锁被配置为与相邻的负载锁定嵌套以形成可堆叠和可嵌套的负载锁组件。

6. 发明授权

US6025602A Ion implantation system for implanting workpieces 失效
标题翻译：用于植入工件的离子植入系统
公开(公告)号：US6025602A
公开(公告)日：2000-02-15
申请号：US66180
申请日：1998-04-23
申请人： Peter H. Rose , Julian G. Blake , Adam A. Brailove , Zhongmin Yang , Richard F. McRay , Barbara J. Hughey
发明人： Peter H. Rose , Julian G. Blake , Adam A. Brailove , Zhongmin Yang , Richard F. McRay , Barbara J. Hughey
IPC分类号： H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/677 , H01L21/683 , H01J37/20
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67745 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.
摘要翻译：一种快速有效地处理大量工件的离子注入系统，如平板显示器。离子注入系统包括安装离子源的高真空处理室，单个工件平移台和负载锁。安装在处理室内的单个工件处理组件都将工件从装载锁上移除，并通过由离子源产生的离子束在植入期间支撑工件。处理室与负载锁组件选择性地流体连通，负载锁组件又与工件加载或终端机械地集成。另外，工件处理组件包括用于在植入期间沿线性扫描方向平移工件的平移台或元件。该线性扫描方向沿着与植入系统的水平纵向轴线横向或正交的路径延伸。根据一个实践，扫描方向和纵向轴线之间形成小于或等于约85度的角度。

7. 发明授权

US4580058A Scanning treatment apparatus 失效
标题翻译：扫描处理装置
公开(公告)号：US4580058A
公开(公告)日：1986-04-01
申请号：US594756
申请日：1984-03-29
申请人： Eric L. Mears , Peter H. Rose
发明人： Eric L. Mears , Peter H. Rose
IPC分类号： H01J37/317 , G21K1/08
CPC分类号： H01J37/3171
摘要： Scanning, as of ion beams, in which two radially aligned devices, e.g. ion source and extraction electrode, are isolated from and accurately positioned with respect to one another, while the second device moves arcuately to produce a scanning effect. Advantageously, while one device, e.g. the ion source, is moved by a rotating shaft, the second device, e.g., the extraction electrode, moves on a curved track centered on the axis of the shaft. While the devices are disposed within respective parts of a vacuum chamber, a mechanical synchronizing mechanism, located outside of the chamber, moves the devices via seals. The specific mechanism shown comprises a driven lead screw, an insulating crank for driving a shaft on which an ion source is mounted, and an arcuate motion tracking device which transmits the motion of the insulating crank into the chamber for driving the extraction electrode upon a curved track.
摘要翻译：像离子束一样扫描，其中两个径向排列的装置，例如，离子源和引出电极相对于彼此隔离并且被精确定位，而第二装置弧形移动以产生扫描效果。有利地，虽然一个装置，例如离子源通过旋转轴移动，第二装置（例如，提取电极）在以轴的轴线为中心的弯曲轨道上移动。当装置设置在真空室的相应部分内时，位于室外的机械同步机构通过密封件移动装置。所示的具体机构包括从动导螺杆，用于驱动其上安装有离子源的轴的绝缘曲柄，以及弓形运动跟踪装置，其将绝缘曲柄的运动传递到用于驱动提取电极的腔室中的弯曲跟踪。

8. 发明授权

US5729028A Ion accelerator for use in ion implanter 失效
标题翻译：离子加速器用于离子注入机
公开(公告)号：US5729028A
公开(公告)日：1998-03-17
申请号：US789629
申请日：1997-01-27
申请人： Peter H. Rose
发明人： Peter H. Rose
IPC分类号： G21K5/04 , C23C14/48 , H01J37/317 , H01L21/265 , H05H5/03 , H05H5/06 , H01J23/10
CPC分类号： H05H5/06
摘要： An ion accelerator for use in an ion beam implanter. The accelerator forms milliampere beams of heavy ions such as boron and phosphorous in a configuration in which the terminal ion source is replaced by a neutral beam injector. The neutral beam is formed at ground by the conversion of a focused beam of positive ions to neutral ions in a charge exchange canal. The neutral beam so formed is stripped of one or more electrons in a gas or vapor filled canal in the high voltage terminal. A 180.degree. analyzing magnet located in the high voltage terminal analyzes and directs a selected charge state to an acceleration tube parallel to the neutral beam injection tube where the selected positive ions are accelerated to ground potential. To extend the energy range of the accelerator below the injection energy, a high voltage insulator is provided to insulate the ground end of the positive ion acceleration tube permitting the acceleration tube and terminal to be uniformly biased at a negative voltage to decelerate the beam to very low energies at a location close to the point of use. An accelerator assembly includes a 90.degree. analyzing magnet in the high voltage terminal.
摘要翻译：用于离子束注入机的离子加速器。在末端离子源被中性射束注射器代替的结构中，加速器形成毫安的重离子束如硼和磷。通过在电荷交换管中将聚合的正离子束转变成中性离子，中性束在地面形成。如此形成的中性光束在高压端子中的气体或蒸气填充的管中被剥离出一个或多个电子。位于高压端子的180°分析磁体分析并将选定的充电状态引导到平行于中性束注入管的加速管，其中所选择的正离子被加速到地电位。为了将加速器的能量范围扩大到注入能量以下，提供高压绝缘体以使正离子加速管的接地端绝缘，允许加速管和端子被均匀地偏压在负电压以将梁减速到非常在靠近使用点的位置处的低能量。加速器组件包括在高压端子中的90°分析磁体。

9. 发明授权

US4804852A Treating work pieces with electro-magnetically scanned ion beams 失效
标题翻译：用电磁扫描离子束处理工件
公开(公告)号：US4804852A
公开(公告)日：1989-02-14
申请号：US32513
申请日：1987-03-30
申请人： Peter H. Rose , Marvin Farley , Lee Grodzins
发明人： Peter H. Rose , Marvin Farley , Lee Grodzins
IPC分类号： H01J37/317 , G21K5/02
CPC分类号： H01J37/3172
摘要： A magnetic scanning technique for sweeping an ion beam across an implantation target, such as a semiconductor wafer, by means of modulating the energy of a beam and directing it through an analyzer magnet, which effects a scanning motion of the beam of constant intensity, the wave form for the modulation being selected to take into account that the areal density of the ions in the scanned beam varies dependently with the amount of displacement of the beam from a reference point. An ion scan can be obtained in which the ions travel in parallel paths and enter the target at a constant desired angle throughout the scan. The technique is applicable to targets held stationary or rotated during implant. By employing predetermined modulation wave forms which are adapted to other parameters of the selected system, a desired scan distribution of ions can be obtained, for instance a uniform distribution in X and Y directions. As applied to a semiconductor wafer rotated on a disc past the ion beam, the technique solves the problem of compensating for the fact that the area of a ring on the spinning disc depends linearly on the radius of the ring. The technique makes use of the properties of ion beams in uniform magnetic fields to produce a radial dependence of the density of the ion beam on the wafer which precisely cancels the radial dependence of circumferential length as a function of radius. The magnetic scanning technique is well adapted for use with large wafers held on rotating discs and has advantages over the conventional techniques of either electrostatic or mechanical scanning. The technique is readily adapted to a variety of other wafer transport systems including rotating conveyors and linear transports.
摘要翻译：一种磁扫描技术，用于通过调制光束的能量并引导其通过分析器磁体来影响离子束穿过诸如半导体晶片的注入靶，其实现恒定强度的束的扫描运动，波形被选择以考虑扫描光束中的离子的面密度随着光束从参考点的位移量而变化。可以获得离子扫描，其中离子在平行路径中行进并且在整个扫描期间以恒定的期望角度进入目标。该技术适用于在植入期间保持静止或旋转的目标。通过采用适合于所选系统的其它参数的预定调制波形，可以获得所需的离子扫描分布，例如在X和Y方向上的均匀分布。当应用于在盘上经过离子束旋转的半导体晶片时，该技术解决了补偿旋转盘上的环的面积与环的半径成线性关系的问题。该技术利用均匀磁场中的离子束的性质来产生离子束在晶片上的密度的径向依赖性，其精确地抵消作为半径的函数的圆周长度的径向依赖性。磁扫描技术非常适合用于保持在旋转盘上的大晶片，并且具有优于静电或机械扫描的常规技术的优点。该技术易于适用于各种其他晶片输送系统，包括旋转输送机和线性输送机。

10. 发明授权

US4675530A Charge density detector for beam implantation 失效
标题翻译：光束注入电荷密度检测器
公开(公告)号：US4675530A
公开(公告)日：1987-06-23
申请号：US753736
申请日：1985-07-11
申请人： Peter H. Rose , Marvin Farley
发明人： Peter H. Rose , Marvin Farley
IPC分类号： H01L21/66 , G01R29/24 , G01R31/265 , H01J37/304 , H01J37/317 , H01L21/265 , H01J37/00
CPC分类号： G01R31/2656 , H01J37/304 , H01J37/3171
摘要： Apparatus for accurately measuring the charge distribution, and hence the voltage, on a non-conducting workpiece during ion bombardment. The invention is based on the principal that the charge on the surface of the workpiece induces equal and opposite charge on the surface of an isolated proof plane conductor placed in front of it. A workpiece is moved at a known speed in front of the proof plane, whose dimensions are small compared to the workpiece. The measurement of the time distribution of the induced charge on the proof plane is a measure of the spatial distribution of the charge on the bombarded workpiece. The proof plane surface is isolated from currents which might flow directly to its surface. The invention has utility for several purposes important to the semiconductor industry: monitoring the surface voltage distribution on a given workpiece during ion bombardment; certification to the device user that the workpiece was implanted under specified values or limits of surface voltage distribution; control of the surface charge distribution on the workpiece through the feedback of the charge-measurement signal to a device which compensates the charge on the workpiece.
摘要翻译：用于在离子轰击期间精确地测量非导电工件上的电荷分布以及因此电压的装置。本发明基于这样的原理，即工件表面上的电荷在放置在其前面的隔离的防护平面导体的表面上产生相等且相反的电荷。工件在校验面前方以已知速度移动，其尺寸与工件相比较小。感测电荷在验证平面上的时间分布的测量是对被轰击的工件上的电荷的空间分布的度量。防爆平面与可能直接流到其表面的电流隔离。本发明可用于半导体工业重要的几个目的：在离子轰击期间监测给定工件上的表面电压分布; 对设备用户认证工件在表面电压分布的指定值或极限值下进行认证; 通过将电荷测量信号反馈到补偿工件上的电荷的装置来控制工件上的表面电荷分布。

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