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1. 发明授权

US5798027A Process for depositing optical thin films on both planar and non-planar substrates 失效
标题翻译：在平面和非平面基板上沉积光学薄膜的工艺
公开(公告)号：US5798027A
公开(公告)日：1998-08-25
申请号：US272104
申请日：1994-07-07
申请人： Paul M. Lefebvre , James W. Seeser , Richard Ian Seddon , Michael A. Scobey , Barry W. Manley
发明人： Paul M. Lefebvre , James W. Seeser , Richard Ian Seddon , Michael A. Scobey , Barry W. Manley
IPC分类号： C23C8/02 , C23C14/00 , C23C14/08 , C23C14/10 , C23C14/34 , C23C14/35 , C23C14/50 , C23C14/56
CPC分类号： C23C14/352 , C23C14/0047 , C23C14/0078 , C23C14/083 , C23C14/10 , C23C14/3407 , C23C14/505 , C23C14/56 , C23C14/562 , C23C8/02
摘要： A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter deposition and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. In one aspect, the associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by the ability to form durable optical quality thin films of nominal refractive indices and controlled coating thickness, including both constant and selectively varied thickness profiles.
摘要翻译：旋转圆柱形溅射系统包括用于溅射沉积诸如难熔金属和形成氧化物的材料的单独的，单独控制的线性磁控溅射沉积和反应区域，以及其他化合物和这些材料的合金。在一个方面，相关联的方法涉及通过差异泵浦，大气分离，顺序或同时操作的沉积和反应区域旋转或平移工件，其特征在于能够通过高产量和能力形成宽范围的材料以形成具有标称折射率和受控涂层厚度的耐用的光学质量薄膜，包括恒定和选择性变化的厚度分布。

2. 发明授权

US5225057A Process for depositing optical films on both planar and non-planar substrates 失效
标题翻译：在平面和非平面基板上沉积光学膜的工艺
公开(公告)号：US5225057A
公开(公告)日：1993-07-06
申请号：US794308
申请日：1991-11-14
申请人： Paul M. LeFebvre , James W. Seeser , Richard I. Seddon , Michael A. Scobey , Barry W. Manley
发明人： Paul M. LeFebvre , James W. Seeser , Richard I. Seddon , Michael A. Scobey , Barry W. Manley
IPC分类号： C23C8/02 , C23C14/00 , C23C14/08 , C23C14/10 , C23C14/34 , C23C14/35 , C23C14/50 , C23C14/56 , C23C14/58
CPC分类号： C23C14/08 , C23C14/0047 , C23C14/0078 , C23C14/083 , C23C14/10 , C23C14/3407 , C23C14/352 , C23C14/505 , C23C14/56 , C23C14/562 , C23C14/58 , C23C14/5806 , C23C8/02 , H01J2237/022
摘要： A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter deposition and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. In one aspect, the associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by the ability to form durable optical quality thin films of nominal refractive indices and controlled coating thickness, including both constant and selectively varied thickness profiles.
摘要翻译：旋转圆柱形溅射系统包括用于溅射沉积诸如难熔金属和形成氧化物的材料的单独的，单独控制的线性磁控溅射沉积和反应区域，以及其他化合物和这些材料的合金。在一个方面，相关联的方法涉及将工件旋转或平移经过差异泵浦，大气分离，顺序或同时操作的沉积和反应区，并且其特征在于能够通过高通量和能力形成宽范围的材料以形成具有标称折射率和受控涂层厚度的耐用的光学质量薄膜，包括恒定和选择性变化的厚度分布。

3. 发明授权

US4851095A Magnetron sputtering apparatus and process 失效
标题翻译：磁控溅射装置及工艺
公开(公告)号：US4851095A
公开(公告)日：1989-07-25
申请号：US154177
申请日：1988-02-08
申请人： Michael A. Scobey , Richard I. Seddon , James W. Seeser , R. Russel Austin , Paul M. LeFebvre , Barry W. Manley
发明人： Michael A. Scobey , Richard I. Seddon , James W. Seeser , R. Russel Austin , Paul M. LeFebvre , Barry W. Manley
IPC分类号： C23C8/02 , C23C14/00 , C23C14/08 , C23C14/10 , C23C14/34 , C23C14/35 , C23C14/50 , C23C14/56 , C23C14/58
CPC分类号： C23C14/352 , C23C14/0047 , C23C14/0078 , C23C14/083 , C23C14/10 , C23C14/3407 , C23C14/505 , C23C14/56 , C23C14/562 , C23C14/58 , C23C8/02 , H01J2237/022
摘要： A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated cathode and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.

4. 发明授权

US5855745A Plasma processing system utilizing combined anode/ ion source 失效
标题翻译：等离子体处理系统利用组合阳极/离子源
公开(公告)号：US5855745A
公开(公告)日：1999-01-05
申请号：US842480
申请日：1997-04-23
申请人： Barry W. Manley
发明人： Barry W. Manley
IPC分类号： H05H1/46 , C23C14/00 , C23C14/35 , H01J37/08 , H01J37/34 , C23C14/34
CPC分类号： C23C14/0047 , C23C14/0057 , C23C14/35 , H01J37/08 , H01J37/3405
摘要： Plasma processing apparatus may comprise a process chamber having a process gas supply for providing a process gas to the process chamber and a vacuum pump for maintaining the process chamber within a predetermined pressure range. A cathode/target assembly positioned within the process chamber is connected to a first terminal of an external power supply. An anode/ion source assembly is also positioned within the process chamber and may include an electrode member having a central aperture therein that defines an active surface on the electrode member. The electrode member is connected to a second terminal of the external power supply. A magnet positioned adjacent the electrode member produces an electron-confining magnetic tunnel adjacent the active surface of the electrode member. The electron-confining magnetic tunnel momentarily traps electrons adjacent the active surface, some of which ionize some of the process gas. A shield member having a central aperture therein surrounds the electrode member so that the central aperture of the shield member is generally aligned with the central aperture in the electrode member. The shield member is electrically insulated from the electrode member.
摘要翻译：等离子体处理装置可以包括具有用于向处理室提供处理气体的处理气体供应的处理室和用于将处理室保持在预定压力范围内的真空泵。位于处理室内的阴极/靶组件连接到外部电源的第一端。阳极/离子源组件也位于处理室内，并且可以包括其中具有中心孔的电极构件，其在电极构件上限定活性表面。电极部件与外部电源的第二端子连接。位于电极构件附近的磁体产生邻近电极构件的有源表面的电子约束磁通道。电子约束磁性隧道瞬间捕获与活性表面相邻的电子，其中一些电离了一些工艺气体。具有其中心孔的屏蔽构件包围电极构件，使得屏蔽构件的中心孔大致与电极构件中的中心孔对准。屏蔽构件与电极构件电绝缘。

5. 发明授权

US5882492A A.C. plasma processing system 失效
标题翻译：等离子体处理系统
公开(公告)号：US5882492A
公开(公告)日：1999-03-16
申请号：US667387
申请日：1996-06-21
申请人： Barry W. Manley , Keith H. Billings
发明人： Barry W. Manley , Keith H. Billings
IPC分类号： H01J37/32 , C23C14/34
CPC分类号： H01J37/32018 , H01J37/32036 , H01J37/32045 , H01J2237/0206
摘要： An AC plasma processing system according to the present invention may include a transformer for placing an alternating current on a first electrode and a second electrode contained within a process chamber. The secondary winding of the transformer is connected across the first and second electrodes. The primary winding of the transformer is connected to an external power supply. A switching device connected to the primary winding of the transformer periodically short circuits the primary winding to induce a secondary voltage in the secondary winding that is less than the arcing voltage associated with the process chamber.
摘要翻译：根据本发明的AC等离子体处理系统可以包括用于将交流电放置在处理室中的第一电极和第二电极上的变压器。变压器的次级绕组连接在第一和第二电极两端。变压器的初级绕组连接到外部电源。连接到变压器的初级绕组的开关装置周期性地使初级绕组短路以在次级绕组中产生小于与处理室相关联的电弧电压的次级电压。

6. 发明授权

US5262028A Planar magnetron sputtering magnet assembly 失效
标题翻译：平面磁控溅射磁体组件
公开(公告)号：US5262028A
公开(公告)日：1993-11-16
申请号：US891707
申请日：1992-06-01
申请人： Barry W. Manley
发明人： Barry W. Manley
IPC分类号： C23C14/35 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3452 , H01J37/3408
摘要： A sputtering magnet assembly includes a plate-shaped pole piece made from a magnetically permeable material and a central magnet positioned substantially at the center of the pole piece and oriented so that its north-south magnetic orientation is substantially perpendicular to the plate shaped pole piece. A plurality of outer magnets are positioned around the central magnet, each of which has its north-south magnetic orientation also perpendicular to the pole piece, but opposite of the orientation of the central magnet. A plurality of primary inner magnets are arranged around the central magnet, between the central magnet and the outer magnets, each of which primary inner magnets has its north-south magnetic orientation parallel to the base pole piece and perpendicular to the magnetic orientations of the central magnet and the outer magnets. The resulting sputtering magnet assembly produces a magnetic field having magnetic flux lines that define a sputtering region adjacent the front surface of the target and within the target body. The magnetic flux lines form an upper magnetic lobe, a lower magnetic lobe, an inner magnetic lobe, and an outer magnetic lobe, all of which are located substantially within the sputtering region. Further, the strengths and orientations of the magnetic lobes are such that a null point exists between the upper, lower, inner, and outer magnetic lobes.
摘要翻译：溅射磁体组件包括由导磁材料制成的板状极片和基本上位于极靴中心的中心磁体并且被定向成使得其南北磁性取向基本上垂直于板状极片。多个外磁体围绕中心磁体定位，每个外磁体的南北磁方向也垂直于极片，但与中心磁体的取向相反。多个初级内磁铁围绕中心磁铁布置在中心磁体和外磁体之间，每个主内磁体的南北磁性取向平行于基极极片并垂直于中心磁铁的磁方向磁铁和外磁铁。所得到的溅射磁体组件产生磁场，该磁场具有限定邻近靶的前表面并在目标体内的溅射区的磁通线。磁通线形成上磁头，下磁瓣，内磁瓣和外磁瓣，所有这些都基本位于溅射区内。此外，磁瓣的强度和取向使得在上，下，内和外磁瓣之间存在零点。

7. 发明授权

US5980707A Apparatus and method for a magnetron cathode with moving magnet assembly 有权
标题翻译：具有移动磁铁组件的磁控管阴极的装置和方法
公开(公告)号：US5980707A
公开(公告)日：1999-11-09
申请号：US217545
申请日：1998-12-18
申请人： Barry W. Manley
发明人： Barry W. Manley
IPC分类号： H01J37/34 , C23C14/32
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A magnet assembly may comprise a first magnet plate having a first magnet mounted thereon and a second magnet plate having a second magnet mounted thereon and a third magnet mounted thereon adjacent the second magnet so that a pole axis of the second magnet is substantially perpendicular to a pole axis of the third magnet. The second magnet plate is positioned adjacent the first magnet plate so that a plasma-confining magnetic field is created between the first, second, and third magnets. The first and second magnet plates are also moveable with respect to one another so that they can be moved between a center position configuration and an end position configuration. An actuator operatively associated with the first and second magnet plates moves the first and second magnet plates with respect to one another so that the first and second magnet plates are located at about the center position configuration for a time that is greater than a time that the first and second magnet plates are located at about the end position configuration.
摘要翻译：磁体组件可包括其上安装有第一磁体的第一磁体板和安装在其上的第二磁体的第二磁体板和安装在其上的与第二磁体相邻的第三磁体，使得第二磁体的极轴基本垂直于第三磁体的极轴。第二磁体板位于第一磁体板附近，使得在第一磁体和第三磁体之间产生等离子体约束磁场。第一和第二磁体板也可以相对于彼此移动，使得它们可以在中心位置构型和端部位置构型之间移动。可操作地与第一和第二磁体板相关联的致动器相对于第一和第二磁体板移动第一和第二磁体板，使得第一和第二磁体板位于大约中心位置配置一段时间，第一和第二磁体板位于端部位置的构型。

8. 发明授权

US5415754A Method and apparatus for sputtering magnetic target materials 失效
标题翻译：用于溅射磁性目标材料的方法和装置
公开(公告)号：US5415754A
公开(公告)日：1995-05-16
申请号：US142162
申请日：1993-10-22
申请人： Barry W. Manley
发明人： Barry W. Manley
IPC分类号： C23C14/35 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3426 , C23C14/35 , H01J37/3408 , H01J37/3452
摘要： A sputtering magnet assembly generates a magnetic field having sufficient strength to produce a plasma-confining magnetic tunnel over the front surface of a magnetic target. A magnetic shunt positioned a spaced distance from the back surface of the magnetic target provides an alternate path for excess magnetic flux liberated by erosion of the target. The alternate path provided by the magnetic shunt has a lower magnetic resistance than most paths that exit the front surface of the target, pass into the sputtering region, and re-enter the front surface of the target. Accordingly, most of the excess magnetic flux is prevented from escaping into the sputtering region.
摘要翻译：溅射磁体组件产生具有足够强度的磁场，以在磁性目标的前表面上产生等离子体约束磁通道。与磁性目标的后表面间隔开的磁分路器提供用于通过目标侵蚀而释放的过剩磁通的备用路径。由磁分路提供的交替路径具有比从目标的前表面出射的大多数路径的磁阻较低的磁阻，进入溅射区域并重新进入靶的前表面。因此，防止大部分过剩的磁通量逸出到溅射区域。

9. 发明授权

US5993613A Method and apparatus for periodic polarity reversal during an active state 失效
标题翻译：在活动状态期间周期性极性反转的方法和装置
公开(公告)号：US5993613A
公开(公告)日：1999-11-30
申请号：US966049
申请日：1997-11-07
申请人： Barry W. Manley
发明人： Barry W. Manley
IPC分类号： C23C14/35 , H01J37/34 , C23C14/34
CPC分类号： C23C14/3492 , C23C14/35 , H01J37/3408 , H01J37/3444
摘要： Apparatus for depositing a film of material on a substrate may comprise sputter deposition apparatus for transferring target atoms from a target to the substrate and a servo control circuit operatively associated with the sputter deposition apparatus. The servo control circuit operates the sputter deposition apparatus in an alternating manner between an "active" state and a "quiescent" state so that a power density on the target during the "active" state is at least about 400 watts per square inch of target area. During the active state, target atoms are transferred from the target to the substrate. During the quiescent state, substantially no target atoms are transferred from the target to the substrate. A polarity reversing circuit operatively associated with the servo control circuit periodically reverses a polarity on the sputter deposition apparatus during the "active" state.
摘要翻译：用于在衬底上沉积材料膜的设备可以包括用于将目标原子从靶材转移到衬底的溅射沉积设备和与溅射沉积设备可操作地相关联的伺服控制电路。伺服控制电路以“主动”状态和“静止”状态之间的交替方式操作溅射沉积设备，使得“活动”状态期间目标上的功率密度为至少约400瓦/平方英寸的目标区。在活性状态下，目标原子从靶转移到底物。在静止状态下，基本上没有目标原子从靶转移到衬底。与伺服控制电路可操作地相关联的极性反转电路在“活动”状态期间周期性地反转溅射沉积设备上的极性。

10. 发明授权

US5815388A Polarity reversing circuit having energy compensation 失效
标题翻译：具有能量补偿的极性反转电路
公开(公告)号：US5815388A
公开(公告)日：1998-09-29
申请号：US898481
申请日：1997-07-22
申请人： Barry W. Manley , Keith H. Billings , Lance J. Collins
发明人： Barry W. Manley , Keith H. Billings , Lance J. Collins
IPC分类号： H05B41/24 , H01J37/32 , H02M7/02 , C23C14/34
CPC分类号： H01J37/32027 , H01J2237/0206 , Y10T307/511 , Y10T307/839 , Y10T307/845 , Y10T307/931
摘要： A polarity reversing circuit having energy compensation may comprise a first inductor connected between the first electrode and a negative terminal of a power supply. The positive terminal of the power supply is connected to the second electrode. A diode and a first capacitor are connected in series across the first inductor so that the cathode of the diode is connected to the first electrode. A second capacitor and a switching device are also connected in series across the first and second electrodes. A second inductor is connected between the switching device and the anode of the diode. A bi-directional converter is connected between the power supply and the second capacitor. The voltage polarity between the first and second electrodes may be reversed by actuating the switching device to switch between a non-conducting state and a conducting state. The voltage polarity may be returned to the normal polarity by again actuating the switching device to switch it from the conducting state to the non-conducting state. A bi-directional converter transfers electrical energy between the polarity reversing circuit and the power supply to compensate for variations in the amount of energy reflected by the electrodes during operation.
摘要翻译：具有能量补偿的极性反转电路可以包括连接在电源的第一电极和负极端子之间的第一电感器。电源的正极与第二电极连接。二极管和第一电容器串联连接在第一电感器上，使得二极管的阴极连接到第一电极。第二电容器和开关装置也串联连接在第一和第二电极上。第二个电感连接在开关器件和二极管的阳极之间。双向转换器连接在电源和第二电容器之间。第一和第二电极之间的电压极性可以通过致动切换装置在非导通状态和导通状态之间切换来反转。通过再次致动开关装置将电压极性从导通状态切换到非导通状态，可以将电压极性恢复到正常极性。双向转换器在极性反转电路和电源之间传递电能，以补偿在操作期间由电极反射的能量的变化。

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