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1. 发明授权

US06765264B1 Method of fabricating power rectifier device to vary operating parameters and resulting device 有权
标题翻译：制造动力整流装置以改变运行参数和产生的装置的方法
公开(公告)号：US06765264B1
公开(公告)日：2004-07-20
申请号：US10446246
申请日：2003-05-27
申请人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov , Charles Lin
发明人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov , Charles Lin
IPC分类号： H01L2976
CPC分类号： H01L29/861 , H01L21/2815 , H01L29/0696 , H01L29/6609 , H01L29/7802
摘要： A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type formed in surface regions of second conductivity type in the first major surface adjacent to the gates. A plurality of channels of the second conductivity type each abuts a source/drain region and extends under a gate, each channel being laterally graded with a sloped P-N junction sepcarating the channel region from the substrate of first conductivity type, In fabricating the vertical semiconductor rectifier device, a partial ion mask is formed on the surface of the semiconductor with the mask having a sloped surface which varies the path length of ions through the mask to form laterally-graded channel regions.
摘要翻译：一种垂直半导体整流器件包括第一导电类型的半导体衬底，并且具有绝缘地形成在第一主表面上的多个栅极和在第一导电类型的第一导电类型的表面区域中形成的多个第一导电类型的源极/漏极区域主要表面毗邻门。第二导电类型的多个通道每个都邻接源极/漏极区并且在栅极下方延伸，每个沟道横向渐变，其中倾斜的PN结从第一导电类型的衬底分离沟道区。在制造垂直半导体整流器在半导体的表面上形成部分离子掩模，其掩模具有倾斜表面，该倾斜表面改变通过掩模的离子的路径长度，以形成横向渐变的通道区域。

2. 发明授权

US06624030B2 Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region 有权
标题翻译：制造具有用于沟道区域的横向渐变的P-N结的功率整流装置的方法
公开(公告)号：US06624030B2
公开(公告)日：2003-09-23
申请号：US09742262
申请日：2000-12-19
申请人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov , Charles Lin
发明人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov , Charles Lin
IPC分类号： H01L21336
CPC分类号： H01L29/861 , H01L21/2815 , H01L29/0696 , H01L29/6609 , H01L29/7802
摘要： A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type formed in surface regions of second conductivity type in the first major surface adjacent to the gates. A plurality of channels of the second conductivity type each abuts a source/drain region and extends under a gate, each channel being laterally graded with a sloped P-N junction separating the channel region from the substrate of first conductivity type. In fabricating the vertical semiconductor rectifier device, a partial ion mask is formed on the surface of the semiconductor with the mask having a sloped surface which varies the path length of ions through the mask to form laterally-graded channel regions.
摘要翻译：一种垂直半导体整流器件包括第一导电类型的半导体衬底，并且具有绝缘地形成在第一主表面上的多个栅极和在第一导电类型的第一导电类型的表面区域中形成的多个第一导电类型的源极/漏极区域主要表面毗邻门。第二导电类型的多个通道每个都邻接源极/漏极区并在栅极下方延伸，每个沟道横向渐变，其中沟道区域与第一导电类型的衬底分离出倾斜的P-N结。在制造垂直半导体整流器件时，在半导体表面上形成一个部分离子掩模，该掩模具有倾斜表面，该倾斜表面改变通过该掩模的离子的路径长度以形成横向渐变的沟道区。

3. 发明授权

US06743703B2 Power diode having improved on resistance and breakdown voltage 有权
标题翻译：功率二极管具有改善的导通电阻和击穿电压
公开(公告)号：US06743703B2
公开(公告)日：2004-06-01
申请号：US10238104
申请日：2002-09-09
申请人： Vladimir Rodov , Paul Chang , Jianren Bao , Wayne Y. W. Hsueh , Arthur Ching-Lang Chiang , Geeng-Chuan Chern
发明人： Vladimir Rodov , Paul Chang , Jianren Bao , Wayne Y. W. Hsueh , Arthur Ching-Lang Chiang , Geeng-Chuan Chern
IPC分类号： H01L2974
CPC分类号： H01L29/7802 , H01L21/2815 , H01L27/0727 , H01L27/0814 , H01L27/095 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/66712 , H01L29/781 , H01L29/861 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A two-terminal power diode has improved reverse bias breakdown voltage and on resistance includes a semiconductor body having two opposing surfaces and a superjunction structure therebetween, the superjunction structure including a plurality of alternating P and N doped regions aligned generally perpendicular to the two surfaces. The P and N doped regions can be parallel stripes or a mesh with each region being surrounded by doped material of opposite conductivity type. A diode junction associated with one surface can be an anode region with a gate controlled channel region connecting the anode region to the superjunction structure. Alternatively, the diode junction can comprise a metal forming a Schottky junction with the one surface. The superjunction structure is within the cathode and spaced from the anode. The spacing can be varied during device fabrication.
摘要翻译：双端功率二极管具有改进的反向偏压击穿电压，并且导通电阻包括具有两个相对表面的半导体本体和它们之间的超结结构，所述超结结构包括多个交替的P和N掺杂区域，其大致垂直于两个表面排列。 P和N掺杂区域可以是平行条纹或网状物，每个区域被相反导电类型的掺杂材料包围。与一个表面相关联的二极管结可以是具有将阳极区域连接到超结构结构的栅极控制沟道区域的阳极区域。或者，二极管结可以包括与该表面形成肖特基结的金属。超结构在阴极内并与阳极间隔开。间隔可以在器件制造过程中变化。

4. 发明授权

US06537860B2 Method of fabricating power VLSI diode devices 有权
公开(公告)号：US06537860B2
公开(公告)日：2003-03-25
申请号：US09739732
申请日：2000-12-18
申请人： Hidenori Akiyama , Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Haru Ohkawa , Yasuo Ohtsuki , Vladimir Rodov
发明人： Hidenori Akiyama , Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Haru Ohkawa , Yasuo Ohtsuki , Vladimir Rodov
IPC分类号： H01L21332
CPC分类号： H01L29/6609 , H01L29/0619 , H01L29/7391 , H01L29/861
摘要： A method for manufacturing a discrete power rectifier device having a VLSI multi-cell design employs a two spacer approach to defining a P/N junction profile having good breakdown voltage characteristics. The method provides highly repeatable device characteristics at reduced cost. The active channel regions of the device are also defined using the same two spacers. The method is a self-aligned process and channel dimensions and doping characteristics may be precisely controlled despite inevitable process variations in spacer formation. Only two masking steps are required, and additional spacers for defining the body region profile can be avoided, reducing processing costs.

5. 发明授权

US07964933B2 Integrated circuit including power diode 有权
标题翻译：集成电路包括功率二极管
公开(公告)号：US07964933B2
公开(公告)日：2011-06-21
申请号：US11821234
申请日：2007-06-22
申请人： Paul Chang , Geeng-Chuan Chern , Prognyan Ghosh , Wayne Y. W. Hsueh , Vladimir Rodov
发明人： Paul Chang , Geeng-Chuan Chern , Prognyan Ghosh , Wayne Y. W. Hsueh , Vladimir Rodov
IPC分类号： H01L21/76
CPC分类号： H01L27/0629 , H01L29/0692 , H01L29/78 , H01L29/861
摘要： A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.
摘要翻译：一种制造包括功率二极管的半导体集成电路的方法包括提供第一导电类型的半导体衬底，在衬底的第一区域中制造诸如CMOS晶体管电路的集成电路，并且在第二区域中制造功率二极管半导体衬底。介电材料形成在第一区域和第二区域之间，从而在第一区域中的集成电路与第二区域中的功率二极管之间提供电隔离。功率二极管可以包括由二极管的一个电极连接在一起的多个MOS源极/漏极元件和相关联的栅极元件，并且第二区域中的半导体层可以用作功率二极管的另一个源极/漏极。

6. 发明授权

US06399996B1 Schottky diode having increased active surface area and method of fabrication 有权
标题翻译：具有增加的活性表面积的肖特基二极管和制造方法
公开(公告)号：US06399996B1
公开(公告)日：2002-06-04
申请号：US09620074
申请日：2000-07-20
申请人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov
发明人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov
IPC分类号： H01L77095
CPC分类号： H01L29/66143 , H01L21/2815 , H01L27/0727 , H01L27/0814 , H01L27/095 , H01L29/0634 , H01L29/781 , H01L29/872
摘要： A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, and a metal layer on the grooved surface and forming a Schottky junction with the semiconductor body. The semiconductor body preferably includes a silicon substrate with the grooved surface being on a device region defined by a guard ring of a conductivity type opposite to the conductivity type of the semiconductor body.
摘要翻译：肖特基二极管包括一种导电类型的半导体本体，具有沟槽表面的半导体本体，以及在凹槽表面上形成与半导体本体的肖特基结的金属层。半导体本体优选地包括具有沟槽表面的硅衬底，该硅衬底在由与半导体本体的导电类型相反的导电类型的保护环限定的器件区域上。

7. 发明授权

US07250668B2 Integrated circuit including power diode 有权
公开(公告)号：US07250668B2
公开(公告)日：2007-07-31
申请号：US11040180
申请日：2005-01-20
申请人： Paul Chang , Geeng-Chuan Chern , Prognyan Ghosh , Wayne Y. W. Hsueh , Vladimir Rodov
发明人： Paul Chang , Geeng-Chuan Chern , Prognyan Ghosh , Wayne Y. W. Hsueh , Vladimir Rodov
IPC分类号： H01L29/00
CPC分类号： H01L27/0629 , H01L29/0692 , H01L29/78 , H01L29/861
摘要： A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.

8. 发明授权

US06448160B1 Method of fabricating power rectifier device to vary operating parameters and resulting device 有权
标题翻译：制造动力整流装置以改变运行参数和产生的装置的方法
公开(公告)号：US06448160B1
公开(公告)日：2002-09-10
申请号：US09544730
申请日：2000-04-06
申请人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov
发明人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov
IPC分类号： H01L2144
CPC分类号： H01L29/7802 , H01L21/2815 , H01L27/0727 , H01L27/0814 , H01L27/095 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/66712 , H01L29/781 , H01L29/861 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor rectifying device which emulates the characteristics of a low forward voltage drop Schottky diode and which is capable of a variety of electrical characteristics from less than 1 A to greater than 1000 A current with adjustable breakdown voltage. The manufacturing process provides for uniformity and controllability of operating parameters, high yield, and readily variable device sizes. The device includes a semiconductor body with a guard ring on one surface to define a device region in which are optionally formed a plurality of conductive plugs. Between the guard ring and the conductive plugs are a plurality of source/drain, gate and channel elements which function with the underlying substrate in forming a MOS transistor. The channel regions are defined by using the photoresist mask for the gate oxide with the photoresist mask isotropically etched to expose a peripheral portion of the gate oxide (and gate electrode) with ions thereafter implanted through the exposed gate for forming the channel region. The source/drain (e.g. source) regions can be formed by ion implantation or by out-diffusion from a doped polysilicon layer.
摘要翻译：一种半导体整流装置，其模拟低正向压降肖特基二极管的特性，并能够具有小于1A至大于1000A电流的多种电气特性，具有可调击穿电压。制造过程提供了操作参数的均匀性和可控性，高产量和容易变化的装置尺寸。该器件包括在一个表面上具有保护环的半导体本体，以限定其中可选地形成多个导电插塞的器件区域。在保护环和导电插塞之间是形成MOS晶体管的多个源极/漏极，栅极和沟道元件，其与下面的衬底起作用。通过使用用于栅极氧化物的光致抗蚀剂掩模来限定沟道区，其中光致抗蚀剂掩模被各向同性蚀刻以暴露栅极氧化物（和栅电极）的外围部分，然后通过暴露的栅极注入用于形成沟道区的离子。源极/漏极（例如源极）区域可以通过离子注入或通过从掺杂多晶硅层向外扩散来形成。

9. 发明授权

US06404033B1 Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication 有权
标题翻译：肖特基二极管具有增加的有源表面积，具有改进的反向偏压特性和制造方法
公开(公告)号：US06404033B1
公开(公告)日：2002-06-11
申请号：US09620653
申请日：2000-07-20
申请人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov
发明人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov
IPC分类号： H01L27095
CPC分类号： H01L29/66143 , H01L21/2815 , H01L27/0814 , H01L27/095 , H01L29/0619 , H01L29/66712 , H01L29/7802 , H01L29/781 , H01L29/861 , H01L29/872
摘要： A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, a metal layer on the grooved surface and forming a Schottky junction with the semiconductor body. The semiconductor body preferably includes a silicon substrate with the grooved surface being on a device region defined by a guard ring of a conductivity type opposite to the conductivity type of the semiconductor body, and a plurality of doped regions at the bottom of grooves and forming P-N junctions with the semiconductor body. The P-N junctions of the doped regions form carrier depletion regions across and spaced from the grooves to increase the reverse bias breakdown voltage and reduce the reverse bias leakage current.
摘要翻译：肖特基二极管包括一种导电类型的半导体本体，半导体本体具有沟槽表面，在凹槽表面上的金属层，并与半导体本体形成肖特基结。半导体本体优选地包括硅衬底，其中沟槽表面在由与半导体本体的导电类型相反的导电类型的保护环限定的器件区域上，以及在沟槽底部的多个掺杂区域并形成PN 与半导体体接合。掺杂区域的P-N结形成跨沟槽间隙的载流子耗尽区域，以增加反向偏压击穿电压并减小反偏压漏电流。

10. 发明授权

US06426541B2 Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication 有权
公开(公告)号：US06426541B2
公开(公告)日：2002-07-30
申请号：US09729127
申请日：2000-12-01
申请人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov
发明人： Paul Chang , Geeng-Chuan Chern , Wayne Y. W. Hsueh , Vladimir Rodov
IPC分类号： H01L27095
CPC分类号： H01L29/66143 , H01L21/2815 , H01L29/781 , H01L29/872
摘要： A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, a metal layer on the grooved surface and forming a Schottky junction with sidewalls of the grooved surface and ohmic contacts with top portions of the grooved surface. The semiconductor body preferably includes a silicon substrate with the grooved surface being on a device region defined by a guard ring of a conductivity type opposite to the conductivity type of the semiconductor body, and a plurality of doped regions at the bottom of grooves and forming P-N junctions with the semiconductor body. The P-N junctions of the doped regions form carrier depletion regions across and spaced from the grooves to increase the reverse bias breakdown voltage and reduce the reverse bias leakage current. The ohmic contacts of the metal layer increase forward current and reduce forward voltage of the Schottky diode.

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