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1. 发明授权

US06456557B1 Voltage regulator for memory device 有权
标题翻译：存储器件的稳压器
公开(公告)号：US06456557B1
公开(公告)日：2002-09-24
申请号：US09941451
申请日：2001-08-28
申请人： Oleg Dadashev , Kyra Jacob
发明人： Oleg Dadashev , Kyra Jacob
IPC分类号： G11C700
CPC分类号： G11C7/227 , G11C5/147 , G11C7/1006 , G11C7/1048 , G11C8/08 , G11C16/0491 , G11C16/30
摘要： A memory device includes a voltage regulator that compensates for resistance variations in the bit line control (multiplexing) circuit used to access the memory cells by including in its feedback path an emulated multiplexing circuit having an identical resistance to that of the multiplexing circuit. The voltage regulator also includes a differential amplifier, a pull-up transistor for generating a reference voltage, and a first clamp transistor controlled by the reference voltage to pass a desired voltage level to the multiplexing circuit. The feedback path incorporates the emulator circuit between a second clamp transistor and a voltage divider. Because the emulation and multiplexing circuits have the same resistance, the voltage passed to the voltage divider is essentially identical to the voltage passed by the multiplexing circuit to a selected memory cell, thereby allowing the voltage regulator to produce an optimal voltage level at the selected memory cell.
摘要翻译：存储器件包括电压调节器，其通过在其反馈路径中包括具有与复用电路的电阻相同的电阻的仿真复用电路来补偿用于访问存储器单元的位线控制（复用）电路中的电阻变化。电压调节器还包括差分放大器，用于产生参考电压的上拉晶体管和由参考电压控制的第一钳位晶体管，以将所需的电压电平传递到多路复用电路。反馈路径包含在第二钳位晶体管和分压器之间的仿真器电路。由于仿真和多路复用电路具有相同的电阻，所以传递到分压器的电压基本上与多路复用电路经过选定存储单元的电压相同，从而允许电压调节器在所选存储器处产生最佳电压电平细胞。

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