专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07147739B2 Systems for assembling components on submounts and methods therefor 有权
公开(公告)号：US07147739B2
公开(公告)日：2006-12-12
申请号：US10325616
申请日：2002-12-20
申请人： Norbert Hiller , Peter S. Andrews , David B. Slater, Jr. , Gerald H. Negley
发明人： Norbert Hiller , Peter S. Andrews , David B. Slater, Jr. , Gerald H. Negley
IPC分类号： B32B37/00 , H05K13/00 , H01L21/00
CPC分类号： H01L21/67144 , H01L21/67132 , Y10T29/5313 , Y10T29/53174 , Y10T29/53178 , Y10T156/1089 , Y10T156/1097 , Y10T156/1707 , Y10T156/1712 , Y10T156/1734 , Y10T156/1744 , Y10T156/1911 , Y10T156/1978
摘要： A component assembly system is provided that includes a longitudinally elongated tape carrier, a longitudinally elongated submount carrier, and an assembly machine. A plurality of components may be attached to the tape carrier. The assembly machine is adapted to receiving the tape carrier, with the components attached thereto, and to receive the submount carrier. The assembly machine is further adapted to bring the tape carrier in close proximity to the submount carrier, and to attach the components to the submounts on the submount carrier.

2. 发明授权

US07638013B2 Systems for assembling components on submounts and methods therefor 有权
标题翻译：用于组装子系统组件的系统及其方法
公开(公告)号：US07638013B2
公开(公告)日：2009-12-29
申请号：US11585515
申请日：2006-10-24
申请人： Norbert Hiller , Peter S. Andrews , David B. Slater, Jr. , Gerald H. Negley
发明人： Norbert Hiller , Peter S. Andrews , David B. Slater, Jr. , Gerald H. Negley
IPC分类号： B32B37/00 , H05K13/00 , H01L21/00
CPC分类号： H01L21/67144 , H01L21/67132 , Y10T29/5313 , Y10T29/53174 , Y10T29/53178 , Y10T156/1089 , Y10T156/1097 , Y10T156/1707 , Y10T156/1712 , Y10T156/1734 , Y10T156/1744 , Y10T156/1911 , Y10T156/1978
摘要： A component assembly system is provided that includes a longitudinally elongated tape carrier, a longitudinally elongated submount carrier, and an assembly machine. A plurality of components may be attached to the tape carrier. The assembly machine is adapted to receiving the tape carrier, with the components attached thereto, and to receive the submount carrier. The assembly machine is further adapted to bring the tape carrier in close proximity to the submount carrier, and to attach the components to the submounts on the submount carrier.
摘要翻译：提供了一种部件组装系统，其包括纵向细长的带状载体，纵向细长的底座载体和组装机。多个部件可以附接到带载体。组装机适于接收带载体的带状载体，并接收底座载体。装配机还适于使带载体紧靠于底座托架，并将部件附接到副安装架托架上的底座上。

3. 发明授权

US07608860B2 Light emitting devices suitable for flip-chip bonding 有权
标题翻译：适用于倒装芯片贴装的发光器件
公开(公告)号：US07608860B2
公开(公告)日：2009-10-27
申请号：US11772419
申请日：2007-07-02
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： H01L29/267
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

4. 发明授权

US06888167B2 Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding 有权
标题翻译：发光器件和适用于倒装芯片接合的发光器件的倒装片接合
公开(公告)号：US06888167B2
公开(公告)日：2005-05-03
申请号：US10185252
申请日：2002-06-27
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： H01L21/60 , H01L33/20 , H01L33/40 , H01L33/62 , H01L29/267
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

5. 发明授权

US07259033B2 Flip-chip bonding of light emitting devices 有权
标题翻译：发光器件的倒装键合
公开(公告)号：US07259033B2
公开(公告)日：2007-08-21
申请号：US10920101
申请日：2004-08-17
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： H01L21/00 , H01L21/50
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

6. 发明授权

US06747298B2 Collets for bonding of light emitting diodes having shaped substrates 有权
标题翻译：用于结合具有成形衬底的发光二极管的夹头
公开(公告)号：US06747298B2
公开(公告)日：2004-06-08
申请号：US10185350
申请日：2002-06-27
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： H01L310328
CPC分类号： H01L33/40 , H01L24/32 , H01L33/20 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/12032 , H01L2924/12041 , H01L2924/00012 , H01L2924/00
摘要： Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.
摘要翻译：提供具有不规则结构的倒装芯片安装的发光器件的接合。具有成形基板的发光二极管通过向衬底施加力而以基板内的剪切力不超过衬底的故障阈值的方式与基座结合。将发光二极管接合到基座可以通过向发光二极管的基板的表面施加力而提供，所述表面倾斜于发光二极管的运动方向，以将发光二极管热偶接合到基台。还提供了用于将成形基板粘合到基座的套筒和用于将成形基板粘合到基座的系统。

7. 发明授权

US07341175B2 Bonding of light emitting diodes having shaped substrates 有权
标题翻译：具有成形衬底的发光二极管的结合
公开(公告)号：US07341175B2
公开(公告)日：2008-03-11
申请号：US10832971
申请日：2004-04-27
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： B23K1/06
CPC分类号： H01L33/40 , H01L24/32 , H01L33/20 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/12032 , H01L2924/12041 , H01L2924/00012 , H01L2924/00
摘要： Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.
摘要翻译：提供具有不规则结构的倒装芯片安装的发光器件的接合。具有成形基板的发光二极管通过向衬底施加力而以基板内的剪切力不超过衬底的故障阈值的方式与基座结合。将发光二极管接合到基座可以通过向发光二极管的基板的表面施加力而提供，所述表面倾斜于发光二极管的运动方向，以将发光二极管热偶接合到基台。还提供了用于将成形基板粘合到基座的套筒和用于将成形基板粘合到基座的系统。

8. 发明授权

US07037742B2 Methods of fabricating light emitting devices using mesa regions and passivation layers 有权
标题翻译：使用台面区域和钝化层制造发光器件的方法
公开(公告)号：US07037742B2
公开(公告)日：2006-05-02
申请号：US10825647
申请日：2004-04-15
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L24/32 , H01L33/405 , H01L33/62 , H01L2924/01322 , H01L2924/12032 , H01L2924/12041 , H01L2924/181 , H01L2924/00
摘要： Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.
摘要翻译：发光二极管包括基板，在其上包括二极管区域的基板上的外延区域和与基板相对的外延区域上的多层导电叠层。钝化层至少部分地延伸在与外延区域相对的多层导电堆叠上，以限定与外延区域相对的多层导电堆叠上的结合区域。钝化层也跨过多层导电叠层延伸穿过外延区域并延伸到衬底上。多层导电叠层可以包括在与衬底相对的外延区域上的欧姆层，在与外延区域相对的欧姆层上的反射器层和与欧姆层相对的反射器层上的锡阻挡层。也可以在与反射层相对的锡阻挡层上设置粘合层。也可以在与锡阻挡层相对的粘附层上设置接合层。还可以提供接合层和底座之间的基座和接合。

9. 发明授权

US06740906B2 Light emitting diodes including modifications for submount bonding 有权
标题翻译：发光二极管，包括用于底座接合的修改
公开(公告)号：US06740906B2
公开(公告)日：2004-05-25
申请号：US10200244
申请日：2002-07-22
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L24/32 , H01L33/405 , H01L33/62 , H01L2924/01322 , H01L2924/12032 , H01L2924/12041 , H01L2924/181 , H01L2924/00
摘要： Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.
摘要翻译：发光二极管包括基板，在其上包括二极管区域的基板上的外延区域和与基板相对的外延区域上的多层导电叠层。钝化层至少部分地延伸在与外延区域相对的多层导电堆叠上，以限定与外延区域相对的多层导电堆叠上的结合区域。钝化层也跨过多层导电叠层延伸穿过外延区域并延伸到衬底上。多层导电叠层可以包括在与衬底相对的外延区域上的欧姆层，在与外延区域相对的欧姆层上的反射器层和与欧姆层相对的反射器层上的锡阻挡层。也可以在与反射层相对的锡阻挡层上设置粘合层。也可以在与锡阻挡层相对的粘附层上设置接合层。还可以提供接合层和底座之间的基座和接合。

10. 发明授权

US08269241B2 Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor 有权
标题翻译：包括阻挡层/子层的发光二极管及其制造方法
公开(公告)号：US08269241B2
公开(公告)日：2012-09-18
申请号：US12564458
申请日：2009-09-22
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式