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1. 发明申请

US20150328875A1 Composite Substrate, Elastic Wave Device, and Method for Producing Elastic Wave Device 有权
标题翻译：复合基板，弹性波装置及其制造方法
公开(公告)号：US20150328875A1
公开(公告)日：2015-11-19
申请号：US14811953
申请日：2015-07-29
申请人： NGK INSULATORS, LTD.
发明人： Ryosuke Hattori , Yuji Hori , Tomoyoshi Tai
IPC分类号： B32B38/10 , H03H9/25 , B32B7/02 , H01L41/187 , B32B9/00 , B32B9/04
CPC分类号： H01L21/6835 , B32B7/02 , B32B7/06 , B32B7/12 , B32B9/005 , B32B9/04 , B32B18/00 , B32B27/08 , B32B27/20 , B32B27/283 , B32B37/10 , B32B38/10 , B32B2264/105 , B32B2307/20 , B32B2307/206 , B32B2307/538 , B32B2309/02 , B32B2309/105 , B32B2457/00 , B32B2457/14 , H01L21/78 , H01L41/1873 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/25 , Y10T428/12597
摘要： A composite substrate 10 is formed by bonding together a piezoelectric substrate 12 and a support substrate 14 that has a lower thermal expansion coefficient than the piezoelectric substrate. The support substrate 14 is formed by directly bonding together a first substrate 14a and a second substrate 14b at a strength that allows separation with a blade, the first and second substrates being formed of the same material, and a surface of the first substrate 14a is bonded to the piezoelectric substrate 12, the surface being opposite to another surface of the first substrate 14a bonded to the second substrate 14b.
摘要翻译：通过将压电基板12和具有比压电基板的热膨胀系数低的支撑基板14接合在一起而形成复合基板10。支撑基板14通过以与刀片分离的强度将第一基板14a和第二基板14b直接接合在一起形成，第一和第二基板由相同的材料形成，第一基板14a的表面是接合到压电基板12，该表面与第二基板14b的第一基板14a的另一个表面相对。

2. 发明申请

US20180053679A1 Composite Substrate, Elastic Wave Device, and Method for Producing Elastic Wave Device 审中-公开
公开(公告)号：US20180053679A1
公开(公告)日：2018-02-22
申请号：US15802967
申请日：2017-11-03
申请人： NGK INSULATORS, LTD.
发明人： Ryosuke Hattori , Yuji Hori , Tomoyoshi Tai
IPC分类号： H01L21/683 , B32B7/02 , B32B7/06 , B32B7/12 , B32B9/00 , B32B9/04 , B32B18/00 , H03H9/25 , B32B27/20 , B32B27/28 , H01L21/78 , B32B38/10 , H03H3/10 , B32B27/08 , B32B37/10 , H01L41/187 , H03H3/08 , H03H9/02
CPC分类号： H01L21/6835 , B32B7/02 , B32B7/06 , B32B7/12 , B32B9/005 , B32B9/04 , B32B18/00 , B32B27/08 , B32B27/20 , B32B27/283 , B32B37/10 , B32B38/10 , B32B2264/105 , B32B2307/20 , B32B2307/206 , B32B2307/538 , B32B2309/02 , B32B2309/105 , B32B2457/00 , B32B2457/14 , H01L21/78 , H01L41/1873 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/25 , Y10T428/12597
摘要： A composite substrate 10 is formed by bonding together a piezoelectric substrate 12 and a support substrate 14 that has a lower thermal expansion coefficient than the piezoelectric substrate. The support substrate 14 is formed by directly bonding together a first substrate 14a and a second substrate 14b at a strength that allows separation with a blade, the first and second substrates being formed of the same material, and a surface of the first substrate 14a is bonded to the piezoelectric substrate 12, the surface being opposite to another surface of the first substrate 14a bonded to the second substrate 14b.

3. 发明授权

US08907547B2 Composite substrate 有权
标题翻译：复合基材
公开(公告)号：US08907547B2
公开(公告)日：2014-12-09
申请号：US14228452
申请日：2014-03-28
申请人： NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
发明人： Tomoyoshi Tai , Yasunori Iwasaki , Yuji Hori , Takahiro Yamadera , Ryosuke Hattori , Kengo Suzuki
IPC分类号： H01L41/09 , H03H9/25 , H01L41/053 , H01L41/083
CPC分类号： H01L41/0838 , H01L41/053 , H01L41/312 , H03H9/02574
摘要： A composite substrate according to the present invention includes a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer joining together the piezoelectric substrate and the support substrate. The amorphous layer contains 3 to 14 atomic percent of argon. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element (such as tantalum) of the piezoelectric substrate than the second and third layers. The third layer contains a larger amount of a constituent element (silicon) of the support substrate than the first and second layers. The second layer contains a larger amount of argon than the first and third layers.
摘要翻译：根据本发明的复合基板包括：单晶钽酸锂或铌酸锂基板的压电基板，作为单晶硅基板的支撑基板和将压电基板和支撑基板接合在一起的非晶层。无定形层含有3〜14原子％的氩。从压电基板向复合基板依次包括第一层，第二层和第三层。第一层包含比第二和第三层更大量的压电基片的构成元件（例如钽）。第三层包含比第一层和第二层更大量的支撑衬底的构成元素（硅）。第二层含有比第一和第三层更大量的氩。

4. 发明授权

US10211389B2 Composite substrate 有权
公开(公告)号：US10211389B2
公开(公告)日：2019-02-19
申请号：US15001501
申请日：2016-01-20
申请人： NGK INSULATORS, LTD. , NGK CERAMIC DEVICE CO., LTD.
发明人： Tomoyoshi Tai , Yuji Hori , Takahiro Yamadera , Ryosuke Hattori , Kengo Suzuki
IPC分类号： H01L41/08 , H03H9/02 , H01L41/312 , H01L41/277 , H03H3/10
摘要： In the composite substrate 10, the piezoelectric substrate 12 and the support substrate 14 are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate 12 is a negatively-polarized surface 12a and another surface of the piezoelectric substrate 12 is a positively-polarized surface 12b. An etching rate at which the negatively-polarized surface 12a is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface 12b is etched with the strong acid. The positively-polarized surface 12b of the piezoelectric substrate 12 is directly bonded to the support substrate 14. The negatively-polarized surface 12a of the piezoelectric substrate 12 may be etched with the strong acid.

5. 发明授权

US09812345B2 Composite substrate, semiconductor device, and method for manufacturing semiconductor device 有权
公开(公告)号：US09812345B2
公开(公告)日：2017-11-07
申请号：US14825715
申请日：2015-08-13
申请人： NGK INSULATORS, LTD.
发明人： Akiyoshi Ide , Tatsuro Takagaki , Sugio Miyazawa , Yuji Hori , Tomoyoshi Tai , Ryosuke Hattori
IPC分类号： H01L21/683 , B32B38/10 , B32B9/00 , B32B9/04 , B32B7/02 , H03H9/25 , H03H3/10 , B32B7/06 , B32B18/00 , H01L21/78 , B32B7/12 , B32B27/08 , B32B27/20 , B32B27/28 , H01L41/187 , H03H9/02 , B32B37/10 , H03H3/08
CPC分类号： H01L21/6835 , B32B7/02 , B32B7/06 , B32B7/12 , B32B9/005 , B32B9/04 , B32B18/00 , B32B27/08 , B32B27/20 , B32B27/283 , B32B37/10 , B32B38/10 , B32B2264/105 , B32B2307/20 , B32B2307/206 , B32B2307/538 , B32B2309/02 , B32B2309/105 , B32B2457/00 , B32B2457/14 , H01L21/78 , H01L41/1873 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/25 , Y10T428/12597
摘要： A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

6. 发明授权

US08866365B2 Composite substrate with partially planarized irregular surface 有权
标题翻译：具有部分平坦化不规则表面的复合基板
公开(公告)号：US08866365B2
公开(公告)日：2014-10-21
申请号：US14167724
申请日：2014-01-29
申请人： NGK Insulators, Ltd.
发明人： Yuji Hori , Ryosuke Hattori , Tomoyoshi Tai
IPC分类号： H01L41/08 , H03H9/25 , H03H9/05 , H03H3/08 , H03H3/02 , H03H9/64 , H03H9/145 , C04B37/02
CPC分类号： H03H9/64 , C04B37/02 , H01L41/312 , H03H3/02 , H03H3/08 , H03H9/02574 , H03H9/02622 , H03H9/02866 , H03H9/0538 , H03H9/059 , H03H9/0595 , H03H9/145 , H03H9/25
摘要： In a composite substrate 10, a bonding surface 21 of a piezoelectric substrate 20 is an irregular surface which is partially planarized. The irregular surface which is partially planarized includes a plurality of protrusions 23, each having a flat portion 25 on the tip thereof. The piezoelectric substrate 20 and the supporting substrate 30 are directly bonded to each other at the flat portions 25. By forming the bonding surface 21 into an irregular surface (rough surface) and providing flat portions 25 at the same time, it is possible to secure a sufficient contact area between the piezoelectric substrate 20 and the supporting substrate 30. Accordingly, in the composite substrate in which the piezoelectric substrate 20 and the supporting substrate 30 are bonded to each other, the bonding surface 21 can be roughened and direct bonding can be performed.
摘要翻译：在复合基板10中，压电基板20的接合面21是部分平坦化的不规则面。部分平坦化的不规则表面包括多个突起23，每个突起23的尖端具有平坦部分25。压电基板20和支撑基板30在平坦部25处直接接合。通过将接合面21形成为凹凸面（粗糙面）并同时设置平坦部25，可以确保压电基板20和支撑基板30之间的充分的接触面积。因此，在压电基板20和支撑基板30彼此接合的复合基板中，接合面21可以被粗糙化，并且可以直接接合执行。

7. 发明申请

US20140210316A1 Composite Substrate and Method for Manufacturing the Same 有权
标题翻译：复合基板及其制造方法
公开(公告)号：US20140210316A1
公开(公告)日：2014-07-31
申请号：US14228422
申请日：2014-03-28
申请人： NGK CERAMIC DEVICE CO., LTD. , NGK INSULATORS, LTD.
发明人： Yuji Hori , Tomoyoshi Tai , Yasunori Iwasaki , Takahiro Yamadera , Ryosuke Hattori , Kengo Suzuki
IPC分类号： H01L41/083
CPC分类号： H01L41/0838 , H01L41/312 , H03H9/02574
摘要： The present invention provides a composite substrate comprising a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer containing argon and joining together the piezoelectric substrate and the support substrate. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element of the piezoelectric substrate than the second and third layers, the third layer contains a larger amount of a constituent element of the support substrate than the first and second layers, and the second layer contains a larger amount of argon than the first and third layers.
摘要翻译：本发明提供一种复合基板，其包括作为单晶钽酸锂或铌酸锂基板的压电基板，作为单晶硅基板的支撑基板和含有氩的非晶层并将压电基板和支撑基板。从压电基板向复合基板依次包括第一层，第二层和第三层。第一层包含比第二层和第三层更大量的压电基板的构成元件，第三层包含比第一层和第二层更大量的支撑衬底的构成元件，并且第二层包含比第一和第三层更大量的氩。

8. 发明授权

US11632093B2 Acoustic wave devices and a method of producing the same 有权
公开(公告)号：US11632093B2
公开(公告)日：2023-04-18
申请号：US16365160
申请日：2019-03-26
申请人： NGK INSULATORS, LTD.
发明人： Tomoyoshi Tai , Masahiko Namerikawa , Yudai Uno , Ryosuke Hattori , Keiichiro Asai
IPC分类号： H03H3/10 , H03H9/25 , H03H9/02 , H03H3/08 , H03H3/02 , H01L41/187 , H01L41/35 , H01L41/312
摘要： An acoustic wave device includes a piezoelectric material substrate, an intermediate layer on the piezoelectric material substrate and composed of one or more materials selected from the group consisting of silicon oxide, aluminum nitride and sialon. A bonding layer is on the intermediate layer and is composed of one or more materials selected from the group consisting of tantalum pentoxide, niobium pentoxide, titanium oxide, mullite, alumina, and a high resistance silicon and hafnium oxide. A supporting body is composed of a polycrystalline ceramic and is bonded to the bonding layer by direct bonding, and an electrode is on the piezoelectric material substrate.

9. 发明授权

US11332849B2 Method of producing periodic polarization inversion structures 有权
公开(公告)号：US11332849B2
公开(公告)日：2022-05-17
申请号：US16366292
申请日：2019-03-27
申请人： NGK INSULATORS, LTD.
发明人： Ryosuke Hattori , Shoichiro Yamaguchi , Hidetsugu Shimokata
IPC分类号： C30B30/04 , C30B33/04 , C30B29/30 , G02F1/355 , G02F1/37
摘要： A method of producing periodic polarization inversion structures requires the provision of first electrode piece part-arrays, each having electrode piece parts on a first main face of a ferroelectric crystal substrate. A voltage is applied on the first electrode piece part-arrays to form first periodic polarization inversion structures. Second electrode piece part-arrays are provided, each having electrode piece parts between the adjacent plural first periodic polarization inversion structures. A voltage is applied on the second electrode piece part-arrays to form second polarization inversion structures.

10. 发明授权

US11107973B2 Joined body of piezoelectric single-crystal substrate and support substrate 有权
公开(公告)号：US11107973B2
公开(公告)日：2021-08-31
申请号：US17097563
申请日：2020-11-13
申请人： NGK INSULATORS, LTD.
发明人： Tomoyoshi Tai , Ryosuke Hattori
IPC分类号： H01L41/08 , H01L41/312 , H01L41/187
摘要： A bonded body includes a supporting substrate; a piezoelectric single crystal substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and an amorphous layer present between the supporting substrate and piezoelectric material substrate, and the amorphous layer contains one or more metal atoms selected from the group consisting of niobium and tantalum, an atom constituting the supporting substrate, and an argon atom. A concentration of the argon atom in a central part of the amorphous layer is higher than a concentration of the argon atom in a peripheral part of the amorphous layer.

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