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1. 发明授权

US07259447B2 Flip-chip type nitride semiconductor light emitting diode 失效
标题翻译：倒装型氮化物半导体发光二极管
公开(公告)号：US07259447B2
公开(公告)日：2007-08-21
申请号：US11150288
申请日：2005-06-13
申请人： Moon Heon Kong , Yong Chun Kim , Jae Hoon Lee , Hyung Ky Back
发明人： Moon Heon Kong , Yong Chun Kim , Jae Hoon Lee , Hyung Ky Back
IPC分类号： H01L23/495
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.
摘要翻译：本文公开了倒装芯片型氮化物半导体发光二极管。发光二极管包括形成在透明基板上并具有基本上矩形的上表面的n型氮化物半导体层，n侧电极包括与n的上表面的至少一个角相邻的至少一个焊盘型氮化物半导体层，从接合焊盘沿着n型氮化物半导体层的上表面的四边形成的带状的延伸电极和从接合焊盘沿上表面的对角线方向延伸的一个或多个指状物，或者在n型氮化物半导体层的未形成n侧电极的区域上依次堆叠的延伸电极，有源层和p型氮化物半导体层以及形成在该n型氮化物半导体层上的高反射欧姆接触层 p型氮化物半导体层。

2. 发明授权

US08664019B2 Vertical group III-nitride light emitting device and method for manufacturing the same 有权
标题翻译：垂直III族氮化物发光器件及其制造方法
公开(公告)号：US08664019B2
公开(公告)日：2014-03-04
申请号：US12271464
申请日：2008-11-14
申请人： Jae Hoon Lee , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
发明人： Jae Hoon Lee , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/32
摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.
摘要翻译：提供了垂直III族氮化物发光器件及其制造方法。发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂Al x Ga y In 1-x-y N层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。未掺杂的GaN层在其顶表面上形成粗糙图案。

3. 发明申请

US20090075412A1 VERTICAL GROUP III-NITRIDE LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：立式III类氮化物发光装置及其制造方法
公开(公告)号：US20090075412A1
公开(公告)日：2009-03-19
申请号：US12271464
申请日：2008-11-14
申请人： Jae Hoon LEE , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
发明人： Jae Hoon LEE , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/32
摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.
摘要翻译：提供了垂直III族氮化物发光器件及其制造方法。发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂Al x Ga y In 1-x-y N层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。未掺杂的GaN层在其顶表面上形成粗糙图案。

4. 发明授权

US07485482B2 Method for manufacturing vertical group III-nitride light emitting device 有权
标题翻译：垂直III族氮化物发光器件的制造方法
公开(公告)号：US07485482B2
公开(公告)日：2009-02-03
申请号：US11401329
申请日：2006-04-11
申请人： Jae Hoon Lee , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
发明人： Jae Hoon Lee , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/20 , H01L33/405 , H01L2933/0083
摘要： The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.
摘要翻译：本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。然后，选择性地蚀刻绝缘层以形成绝缘图案，并且在绝缘层上依次形成n掺杂的Al x Ga y In 1（1-xy）N层，有源层和p掺杂的AlmGanIn（1-m）N层模式。在p掺杂的AlmGanIn（1-m-n）N层上形成导电性基板。去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂Al x Ga y In（1-x-y）N层的暴露表面的一部分上形成n电极。

5. 发明授权

US07648849B2 Nitride semiconductor light emitting diode having mesh DBR reflecting layer 有权
标题翻译：氮化物半导体发光二极管具有网状DBR反射层
公开(公告)号：US07648849B2
公开(公告)日：2010-01-19
申请号：US11933950
申请日：2007-11-01
申请人： Jae Hoon Lee , In Eung Kim , Yong Chun Kim , Hyun Kyung Kim , Moon Heon Kong
发明人： Jae Hoon Lee , In Eung Kim , Yong Chun Kim , Hyun Kyung Kim , Moon Heon Kong
IPC分类号： H01L21/00
CPC分类号： H01L33/387 , H01L33/32 , H01L33/405 , H01L33/46
摘要： A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.
摘要翻译：倒装芯片型氮化物半导体发光二极管包括透光性基板，n型氮化物半导体层，有源层，p型氮化物半导体层和网状DBR反射层。网状DBR反射层具有多个开放区域。网状DBR反射层由具有不同Al含量的第一和第二氮化物层组成。第一和第二氮化物层交替堆叠几次以形成网状DBR反射层。在网状DBR反射层和p-型氮化物半导体层上形成欧姆接触层。

6. 发明申请

US20090001398A1 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090001398A1
公开(公告)日：2009-01-01
申请号：US12155877
申请日：2008-06-11
申请人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
发明人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/16 , H01L33/22
摘要： There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.
摘要翻译：提供了可以通过简单的工艺制造并且具有优异的光提取效率的半导体发光器件和制造具有高再现性和高生产量的半导体发光器件的方法。根据本发明的一个方面，具有基板和叠层体的半导体发光器件依次层叠在基板上，其中第一导电型半导体层，有源层和第二导电类型半导体层包括二氧化硅颗粒层; 以及形成在二氧化硅粒子层的下部的不平坦部。

7. 发明授权

US08426880B2 Semiconductor light emitting device and method of manufacturing the same 失效
公开(公告)号：US08426880B2
公开(公告)日：2013-04-23
申请号：US12155877
申请日：2008-06-11
申请人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
发明人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/16 , H01L33/22
摘要： There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

8. 发明授权

US07470938B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07470938B2
公开(公告)日：2008-12-30
申请号：US10983637
申请日：2004-11-09
申请人： Jae Hoon Lee , Jeong Wook Lee , Hyun Kyung Kim , Yong Chun Kim
发明人： Jae Hoon Lee , Jeong Wook Lee , Hyun Kyung Kim , Yong Chun Kim
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/24 , H01L33/00 , H01L29/22 , H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/22 , Y10S257/918
摘要： In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination at the upper and lower surfaces of the substrate to decrease total reflection at the interfaces, thereby improving light emitting efficiency. The device includes a substrate having upper and lower surfaces on which predetermined patterns are formed such that light can be incident within a critical angle, the substrate allowing a gallium nitride-based semiconductor material to be grown thereon, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed on the upper surface of the n-type nitride semiconductor layer such that the n-type nitride semiconductor layer is partially exposed, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-electrode formed on the upper surface of the p-type nitride semiconductor layer, and an n-side electrode formed on the partially exposed n-type nitride semiconductor layer.
摘要翻译：在具有形成在基板的上表面和下表面上的图案的氮化物半导体发光器件中，以倒装芯片接合结构发射光，该图案能够改变在基板的上表面和下表面处的光倾斜度在界面处的全反射，从而提高发光效率。该装置包括具有上表面和下表面的基板，预定图案形成在其上，使得光可以临界角入射，所述基板允许在其上生长氮化镓基半导体材料，形成n型氮化物半导体层在所述基板的上表面上形成有在n型氮化物半导体层的上表面上形成的n型氮化物半导体层被部分露出的有源层，形成在所述n型氮化物半导体层的上表面上的p型氮化物半导体层有源层，形成在p型氮化物半导体层的上表面上的p电极和形成在部分暴露的n型氮化物半导体层上的n侧电极。

9. 发明授权

US07115914B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07115914B2
公开(公告)日：2006-10-03
申请号：US10944745
申请日：2004-09-21
申请人： Jae Hoon Lee , Yong Chun Kim , Je Won Kim
发明人： Jae Hoon Lee , Yong Chun Kim , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A nitride semiconductor light-emitting device includes a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.
摘要翻译：氮化物半导体发光器件包括第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上并且具有至少一个量子阱层和至少一个量子势垒层交替叠层的有源层; 以及形成在有源层上的第二导电氮化物半导体层，其中有源层中的量子阱层和量子势垒层中的至少一个掺杂有浓度小于1％的元素Al。

10. 发明授权

US08410497B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08410497B2
公开(公告)日：2013-04-02
申请号：US12338438
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/641
摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.
摘要翻译：提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

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