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1. 发明授权

US06527817B1 Composition and method for planarizing surfaces 有权
公开(公告)号：US06527817B1
公开(公告)日：2003-03-04
申请号：US09625142
申请日：2000-07-25
申请人： Mingming Fang , Brian L. Mueller , James A. Dirksen
发明人： Mingming Fang , Brian L. Mueller , James A. Dirksen
IPC分类号： B24D302
CPC分类号： C09G1/02 , C09K3/1463 , G11B5/8404 , H01L21/3212
摘要： A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt. % of fumed metal oxide, and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.

2. 发明授权

US06293848B1 Composition and method for planarizing surfaces 有权
标题翻译：平面化表面的组成和方法
公开(公告)号：US06293848B1
公开(公告)日：2001-09-25
申请号：US09440401
申请日：1999-11-15
申请人： Mingming Fang , Brian L. Mueller , James A. Dirksen
发明人： Mingming Fang , Brian L. Mueller , James A. Dirksen
IPC分类号： B24B100
CPC分类号： C09K3/1463 , G11B5/8404 , H01L21/3212
摘要： A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt. % of fumed metal oxide, and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.
摘要翻译：提供了一种用该组合物对表面进行平面化或抛光的组合物和方法。组合物包含液体载体，化学促进剂和包含约5-90wt。％的热解金属氧化物，和约10-95wt。％的磨料颗粒，其中约90％或更多的磨料颗粒（数量）具有不大于100nm的粒度。本发明的组合物可用于以高抛光效率，均匀性和去除速率平坦化或抛光表面，并且具有最小的缺陷性，例如下面的结构和形貌的场损失。

3. 发明授权

US06716755B2 Composition and method for planarizing surfaces 失效
标题翻译：平面化表面的组成和方法
公开(公告)号：US06716755B2
公开(公告)日：2004-04-06
申请号：US10340561
申请日：2003-01-10
申请人： Mingming Fang , Brian L. Mueller , James A. Dirksen
发明人： Mingming Fang , Brian L. Mueller , James A. Dirksen
IPC分类号： H01L21302
CPC分类号： C09G1/02 , C09K3/1463 , G11B5/8404 , H01L21/3212
摘要： A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt. % of fumed metal oxide, and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.
摘要翻译：提供了一种用该组合物对表面进行平面化或抛光的组合物和方法。组合物包含液体载体，化学促进剂和包含约5-90wt。％的热解金属氧化物，和约10-95wt。％的磨料颗粒，其中约90％或更多的磨料颗粒（数量）具有不大于100nm的粒度。本发明的组合物可用于以高抛光效率，均匀性和去除速率平坦化或抛光表面，并且具有最小的缺陷性，例如下面的结构和形貌的场损失。

4. 发明授权

US07267784B2 Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces 失效
标题翻译：化学机械抛光（CMP）浆料和平面化计算机存储盘表面的方法
公开(公告)号：US07267784B2
公开(公告)日：2007-09-11
申请号：US11447212
申请日：2006-06-05
申请人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.
摘要翻译：用于平坦化或抛光表面，特别是半导体晶片表面的组合物和方法。本文所述的抛光组合物包含（a）液体载体; （b）纯化粘土; 和任选的添加剂，例如（c）化学加速剂; 和（d）能够与在抛光过程中除去的金属和/或绝缘材料化学或离子络合或耦合的络合或偶联剂。络合或偶联剂在抛光期间携带去除的金属和/或二氧化硅绝缘体颗粒，以防止分离的颗粒返回到它们被除去的表面。还公开了平面化或抛光表面的方法，包括使表面与组合物接触。

5. 发明申请

US20130294987A1 Dry Processes, Apparatus Compositions and Systems for Reducing Mercury, Sulfur Oxides and HCl 有权
标题翻译：干法，设备组合物和还原汞，硫氧化物和HCl的系统
公开(公告)号：US20130294987A1
公开(公告)日：2013-11-07
申请号：US13873668
申请日：2013-04-30
申请人： Christopher R. Smyrniotis , Kent W. Schulz , Emelito P. Rivera , Mingming Fang
发明人： Christopher R. Smyrniotis , Kent W. Schulz , Emelito P. Rivera , Mingming Fang
IPC分类号： B01D53/64
CPC分类号： B01D53/64 , B01D53/507 , B01D53/79 , B01D53/80 , B01D2251/402 , B01D2251/404 , B01D2251/608 , B01D2251/80 , B01D2253/11 , B01D2259/126 , B01J20/0237 , B01J20/043 , B01J20/06 , B01J20/223 , F23J15/003 , F23J15/025 , F23J2215/20 , F23J2215/60
摘要： Dry processes, apparatus, compositions and systems are provided for reducing emissions of mercury and optionally sulfur oxides and/or HCl. In an embodiment the copper-based mercury remediation composition comprises a copper ammonium complex having an empirical formula of C2H7CuNO2 or any of the other materials described, which include compositions defined by the formula Cu(NH3)x((lower carboxylate)y, wherein the lower carboxylate is selected from the group consisting of formate, acetate and propionate, x is an integer from 0 to 4, y is an integer from 0 to 2, and x+y is equal to or greater than 1. Sulfur oxides and/or HCl can be additionally reduced by introduction of dolomite hydrate sorbent, and additional mercury remediation chemicals as manganese oxides can be employed. The treated gas stream is treated with a particulate removal device.
摘要翻译：提供干法，装置，组合物和系统，用于减少汞和任选的硫氧化物和/或HCl的排放。在一个实施方案中，铜基汞修复组合物包含具有经验式C 2 H 7 CuNO 2或所述其它材料的铜铵络合物，其包括由式Cu（NH 3）x（（低级羧酸酯）y）定义的组成，其中低级羧酸盐选自甲酸盐，乙酸盐和丙酸盐，x为0至4的整数，y为0至2的整数，x + y等于或大于1.硫氧化物和/或可以通过引入白云石水合物吸附剂来另外还原HCl，并且可以使用另外的汞修复化学品作为氧化锰，经处理的气流用微粒去除装置处理。

6. 发明授权

US07223156B2 Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces 失效
标题翻译：方法化学机械抛光和平面化刚玉，GaAs，GaP和GaAs / GaP合金表面
公开(公告)号：US07223156B2
公开(公告)日：2007-05-29
申请号：US11131962
申请日：2005-05-18
申请人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
IPC分类号： B24B1/00
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1409 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： Compositions and methods for planarizing or polishing a corundum, GaAs, GaP or GaAs/GaP alloy surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) a smectite clay, preferably a sodium smectite clay; and optional additives, such as (c) CeO2, SiO2 and/or Al2O3 abrasive particles, (d) a chemical accelerator; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the material removed during the polishing process. The optional complexing or coupling agent carries away the removed particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing corundum, GaAs, GaP and GaAs/GaP alloy surfaces comprising contacting the surface with the compositions.
摘要翻译：用于平坦化或抛光刚玉，GaAs，GaP或GaAs / GaP合金表面，特别是半导体晶片表面的组合物和方法。本文所述的抛光组合物包含（a）液体载体; （b）绿土粘土，优选绿土粘土; 和任选的添加剂，例如（c）CeO 2 SiO 2 SiO 2和/或Al 2 O 3 3研磨剂颗粒，（d）化学加速剂; 和（e）能够与在抛光过程中除去的材料化学或离子络合或耦合的络合或偶联剂。任选的络合剂或偶联剂在抛光过程中携带去除的颗粒，以防止分离的颗粒返回到它们被除去的表面。还公开了平面化或抛光刚玉，GaAs，GaP和GaAs / GaP合金表面的方法，包括使表面与组合物接触。

7. 发明授权

US07112123B2 Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces 失效
标题翻译：含有粘土和CeO2磨料颗粒的化学机械抛光（CMP）浆料和平面化表面的方法
公开(公告)号：US07112123B2
公开(公告)日：2006-09-26
申请号：US10867337
申请日：2004-06-14
申请人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
IPC分类号： B24B1/00
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 μm.
摘要翻译：用于平坦化或抛光表面的组合物，其包含（a）液体载体，和（b）包含约0.1至约10重量％的粘土磨料颗粒和约0.1重量％至约50重量％的CeO 2 / SUB>颗粒，基于组合物中固体的总重量，所述粘土和CeO 2 O 3研磨颗粒具有使得至少90％的颗粒（数量）的颗粒，当浆料在水中，具有在约10nm至约10um范围内的粒度。

8. 发明申请

US20050277367A1 Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces 失效
标题翻译：含有粘土和CeO2磨料颗粒的化学机械抛光（CMP）浆料和平面化表面的方法
公开(公告)号：US20050277367A1
公开(公告)日：2005-12-15
申请号：US10867337
申请日：2004-06-14
申请人： Mingming Fang , Michael Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael Ianiro , Don Eisenhour
IPC分类号： C03C19/00 , C09G1/02 , C09K3/14 , H01L21/00 , H01L21/3105 , H01L21/321 , B24B1/00
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 μm.
摘要翻译：用于平坦化或抛光表面的组合物，其包含（a）液体载体，和（b）包含约0.1至约10重量％的粘土磨料颗粒和约0.1重量％至约50重量％的CeO 2 / SUB>颗粒，基于组合物中固体的总重量，所述粘土和CeO 2 O 3研磨颗粒具有使得至少90％的颗粒（数量）的颗粒，当浆料在水中，具有在约10nm至约10um范围内的粒度。

9. 发明申请

US20050072054A1 Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces 审中-公开
标题翻译：化学机械抛光（CMP）浆料和平面化计算机存储盘表面的方法
公开(公告)号：US20050072054A1
公开(公告)日：2005-04-07
申请号：US10713709
申请日：2003-11-14
申请人： Mingming Fang , Michael Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael Ianiro , Don Eisenhour
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , B24D3/02
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for planarizing or polishing a NiP, glass, ceramic or Glass-ceramic surface in the manufacture of a computer memory disk. The polishing compositions described herein comprise (a) a liquid carrier, preferably water; (b) an abrasive; (c) purified clay; and optional additives, such as (d) a chemical accelerator or oxidizing agent; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the NiP, glass, ceramic, and/or glass-ceramic material removed during the polishing process. The complexing or coupling agent carries away the metal, glass, ceramic and/or glass-ceramic particles removed during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a NiP, glass, ceramic and/or glass-ceramic surface comprising contacting the surface with the compositions.
摘要翻译：用于在计算机存储盘的制造中平面化或抛光NiP，玻璃，陶瓷或玻璃陶瓷表面的组合物和方法。本文所述的抛光组合物包含（a）液体载体，优选水; （b）磨料; （c）纯化粘土; 和任选的添加剂，例如（d）化学促进剂或氧化剂; 和（e）与在抛光过程中除去的NiP，玻璃，陶瓷和/或玻璃 - 陶瓷材料化学或离子络合或耦合的络合或偶联剂。络合或偶联剂携带抛光过程中除去的金属，玻璃，陶瓷和/或玻璃 - 陶瓷颗粒，以防止分离的颗粒返回到被除去的表面。还公开了平面化或抛光NiP，玻璃，陶瓷和/或玻璃 - 陶瓷表面的方法，包括使表面与组合物接触。

10. 发明授权

US06805812B2 Phosphono compound-containing polishing composition and method of using same 失效
标题翻译：含膦酰基化合物的抛光组合物及其使用方法
公开(公告)号：US06805812B2
公开(公告)日：2004-10-19
申请号：US09975335
申请日：2001-10-11
申请人： Mingming Fang
发明人： Mingming Fang
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing system for a substrate comprising a liquid carrier, a polishing pad and/or an abrasive, a per-type oxidizer, and a phosphono group-containing additive, as well as a method of using the same to polish substrates, particularly nickel-containing substrates.
摘要翻译：本发明提供了一种用于基材的化学机械抛光系统，其包括液体载体，抛光垫和/或研磨剂，每种类型的氧化剂和含有膦酰基的添加剂，以及其使用方法抛光底物，特别是含镍底物。

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