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1. 发明授权

US07026252B2 Etching aftertreatment method 失效
标题翻译：蚀刻后处理方法
公开(公告)号：US07026252B2
公开(公告)日：2006-04-11
申请号：US10372271
申请日：2003-02-25
申请人： Michinobu Mizumura , Ryouji Fukuyama , Mamoru Yakushiji , Yutaka Ohmoto , Katsuya Watanabe
发明人： Michinobu Mizumura , Ryouji Fukuyama , Mamoru Yakushiji , Yutaka Ohmoto , Katsuya Watanabe
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802
摘要： After etching a Si-containing low permittivity insulating film with chlorine based gas, the etched wafer is subjected to an etching aftertreatment process comprising introducing oxygen gas to a vacuum processing chamber with a pressure as low as 0.2 Pa to 1 Pa and a flow rate as low as 5 cc to 20 cc/min, generating plasma within the chamber, heating the wafer 2 being subjected to aftertreatment between 50° C. and 200° C., applying a wafer bias power within the range of 50 W to 200 W, and exposing the wafer to the generated plasma, thereby simultaneously removing the photoresist components, the antireflection film components and the halogen components.
摘要翻译：在用含氯气体蚀刻含Si低介电常数绝缘膜之后，对经蚀刻的晶片进行蚀刻后处理，其中包括将氧气引入至低至0.2Pa至1Pa的压力的真空处理室中，流速为低至5cc至20cc / min，在室内产生等离子体，加热晶片2在50℃和200℃之间进行后处理，将晶片偏置功率施加在50W至200W的范围内，并将晶片暴露于产生的等离子体，从而同时去除光致抗蚀剂组分，抗反射膜组分和卤素组分。

2. 发明授权

US07122479B2 Etching processing method 失效
标题翻译：蚀刻加工方法
公开(公告)号：US07122479B2
公开(公告)日：2006-10-17
申请号：US10228917
申请日：2002-08-28
申请人： Yutaka Ohmoto , Ryouji Fukuyama , Mamoru Yakushiji , Michinobu Mizumura
发明人： Yutaka Ohmoto , Ryouji Fukuyama , Mamoru Yakushiji , Michinobu Mizumura
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01J2237/3342 , H01L21/31116 , H01L21/31138
摘要： An etching processing method capable of etching a low dielectric constant layer at a reduced cost by using an etching processing apparatus comprising a vacuum vessel, a sample loading electrode disposed in the vacuum vessel, a gas introduction device for introducing a reaction gas into the vacuum vessel, an antenna for forming plasmas in the vacuum vessel, and a high frequency power supply for supplying a bias power to a sample loaded on the sample loading electrode, wherein the bias power to be supplied to the sample is 3 W/cm2 or less, and the gas introduction device introduces a gas containing chlorine atoms or bromine atoms to apply etching processing to an inorganic insulation material of low dielectric constant loaded on the loading electrode.
摘要翻译：一种蚀刻处理方法，其能够通过使用包括真空容器，设置在真空容器中的样品加载电极的蚀刻处理装置，以较低的成本蚀刻低介电常数层，将反应气体引入真空容器中的气体引入装置，用于在真空容器中形成等离子体的天线和用于向装载在样本加载电极上的样品提供偏置功率的高频电源，其中待提供给样品的偏置功率为3W / 2以下，气体引入装置引入含有氯原子或溴原子的气体，对负载在负载电极上的低介电常数的无机绝缘材料进行蚀刻处理。

3. 发明授权

US07396481B2 Etching method of organic insulating film 失效
标题翻译：有机绝缘膜的蚀刻方法
公开(公告)号：US07396481B2
公开(公告)日：2008-07-08
申请号：US11208592
申请日：2005-08-23
申请人： Michinobu Mizumura , Ryooji Fukuyama , Yutaka Ohmoto , Katsuya Watanabe
发明人： Michinobu Mizumura , Ryooji Fukuyama , Yutaka Ohmoto , Katsuya Watanabe
IPC分类号： H01L21/00 , G01L21/30
CPC分类号： H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01L21/31138 , H01L21/31144
摘要： This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.
摘要翻译：本发明涉及用于制造半导体器件的有机绝缘膜的蚀刻方法。通过从氢气和氮气或氨气中产生等离子体来蚀刻要形成低介电常数有机绝缘膜的待蚀刻样品，并控制气体流速和压力，使氢气的发光光谱强度比等离子体中的原子和青色分子达到规定值。通过这种方法，可以在不使用任何蚀刻停止层的情况下蚀刻作为层之间的绝缘膜的低介电常数有机绝缘膜，使得用于电线的沟槽和孔的底表面变得平坦。

4. 发明申请

US20060065624A1 Etching method of organic insulating film 失效
公开(公告)号：US20060065624A1
公开(公告)日：2006-03-30
申请号：US11208592
申请日：2005-08-23
申请人： Michinobu Mizumura , Ryooji Fukuyama , Yutaka Ohmoto , Katsuya Watanabe
发明人： Michinobu Mizumura , Ryooji Fukuyama , Yutaka Ohmoto , Katsuya Watanabe
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01L21/31138 , H01L21/31144
摘要： This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.

5. 发明授权

US06793833B2 Etching method of organic insulating film 失效
标题翻译：有机绝缘膜的蚀刻方法
公开(公告)号：US06793833B2
公开(公告)日：2004-09-21
申请号：US10080540
申请日：2002-02-25
申请人： Michinobu Mizumura , Ryooji Fukuyama , Yutaka Ohmoto , Katsuya Watanabe
发明人： Michinobu Mizumura , Ryooji Fukuyama , Yutaka Ohmoto , Katsuya Watanabe
IPC分类号： H01L2100
CPC分类号： H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01L21/31138 , H01L21/31144
摘要： This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed and is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surface of trenches and holes for electrical wiring become flat.
摘要翻译：本发明涉及用于制造半导体器件的有机绝缘膜的蚀刻方法。在其上形成低介电常数有机绝缘膜的被蚀刻样品，并通过从氢气和氮气或氨气产生等离子体进行蚀刻，并控制气体流速和压力，使得发光光谱强度比等离子体中的氢原子和青色分子达到规定值。通过这种方法，可以在不使用任何蚀刻停止层的情况下蚀刻作为层之间的绝缘膜的低介电常数有机绝缘膜，使得沟槽的底表面和电线的孔变得平坦。

6. 发明授权

US07014787B2 Etching method of organic insulating film 失效
公开(公告)号：US07014787B2
公开(公告)日：2006-03-21
申请号：US10814249
申请日：2004-04-01
申请人： Michinobu Mizumura , Ryooji Fukuyama , Yutaka Ohmoto , Katsuya Watanabe
发明人： Michinobu Mizumura , Ryooji Fukuyama , Yutaka Ohmoto , Katsuya Watanabe
IPC分类号： H01L21/00 , G01L21/30
CPC分类号： H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01L21/31138 , H01L21/31144
摘要： This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.

7. 发明授权

US08854600B2 Exposure apparatus and photomask 有权
标题翻译：曝光装置和光掩模
公开(公告)号：US08854600B2
公开(公告)日：2014-10-07
申请号：US13091774
申请日：2011-04-21
申请人： Michinobu Mizumura
发明人： Michinobu Mizumura
IPC分类号： G03F1/00 , G03F7/20 , G03F1/38
CPC分类号： G03F7/70791 , G03F1/00 , G03F1/14 , G03F1/38 , G03F1/50 , G03F7/70283
摘要： The present invention provides an exposure apparatus for intermittently irradiating light from a light source to a TFT substrate through a photomask while conveying the TFT substrate in one direction, and forming an exposure pattern on the TFT substrate corresponding to a plurality of mask patterns formed on the photomask. On one surface of the photomask, electrode wiring patterns and signal wiring patterns requiring different resolutions are formed and an electrode wiring pattern group including a plurality of electrode wiring patterns and a signal wiring pattern group including a plurality of signal wiring patterns are formed in front and back in the conveying direction of the TFT substrate, and on the other surface of the photomask, micro-lenses which reduce and project the electrode wiring patterns requiring a high resolution onto the TFT substrate are formed. The photomask is disposed so that the micro-lenses face the TFT substrate.
摘要翻译：本发明提供一种曝光装置，用于通过光掩模间歇地将光从光源照射到TFT基板，同时在一个方向上传送TFT基板，并且在TFT基板上形成对应于形成在TFT基板上的多个掩模图案的曝光图案光掩模在光掩模的一个表面上，形成电极配线图案和需要不同分辨率的信号布线图案，并且在前面形成包括多个电极布线图形和包括多个信号布线图案的信号布线图案组的电极布线图案组，返回到TFT基板的输送方向，并且在光掩模的另一个表面上，形成将需要高分辨率的电极布线图案减少并投影到TFT基板上的微透镜。光掩模被设置成使得微透镜面对TFT基板。

8. 发明申请

US20140168622A1 MICROLENS ARRAY AND SCANNING EXPOSURE DEVICE USING SAME 有权
标题翻译：使用相同的微阵列和扫描曝光装置
公开(公告)号：US20140168622A1
公开(公告)日：2014-06-19
申请号：US14236319
申请日：2012-07-27
申请人： Michinobu Mizumura , Yoshio Watanabe
发明人： Michinobu Mizumura , Yoshio Watanabe
IPC分类号： G02B3/00 , G03F9/00
CPC分类号： G02B3/0056 , G03F7/70275 , G03F7/70308 , G03F9/70
摘要： This microlens array comprises hexagonal field diaphragms in inverted-image-forming positions, i.e., microlenses, a plurality of which are arranged in the direction perpendicular to a direction of scanning, and from which rows of microlenses are configured. Further, for three rows of microlenses, microlens rows are arranged with offset by (a length S) in a direction perpendicular to the direction of scanning such that triangular portions of the hexagonal field diaphragms overlap in the direction of scanning. Furthermore, microlens row groups, which are configured from three microlens rows, are arranged with offset in the direction perpendicular to the direction of scanning in increments of a minute amount of shifting F (for example, 2 μm). Thereby, this scanning exposure device using a microlens array is capable of preventing exposure ununiformity even in the direction perpendicular to the direction of scanning.
摘要翻译：该微透镜阵列包括反转图像形成位置中的六边形场隔膜，即微透镜，其中多个沿垂直于扫描方向的方向排列，并且从其构成微行列。此外，对于三行微透镜，微透镜排沿垂直于扫描方向的方向偏移（长度S），使得六边形场隔膜的三角形部分在扫描方向上重叠。此外，由三个微透镜列构成的微透镜行组以微小量的移动F（例如，2μm）的增量在垂直于扫描方向的方向上偏移地布置。因此，使用微透镜阵列的该扫描曝光装置即使在与扫描方向垂直的方向上也能够防止曝光不均匀。

9. 发明申请

US20110244379A1 METHOD FOR FORMING CONVEX PATTERN, EXPOSURE APPARATUS AND PHOTOMASK 有权
标题翻译：形成凹凸图案，曝光装置和光刻胶的方法
公开(公告)号：US20110244379A1
公开(公告)日：2011-10-06
申请号：US13160967
申请日：2011-06-15
申请人： Koichi Kajiyama , Michinobu Mizumura , Kazushige Hashimoto
发明人： Koichi Kajiyama , Michinobu Mizumura , Kazushige Hashimoto
IPC分类号： G03F7/20 , G03F1/00 , G03B27/42
CPC分类号： G02F1/133516 , G02F1/13394 , G02F2001/13396 , G03F7/203 , G03F7/70283
摘要： The present invention is a photomask 3 for exposing a substrate coated with a positive photosensitive material. At least a first mask pattern group 16 and a second mask pattern group 17 are formed on a transparent substrate at a predetermined arrangement pitch. The first mask pattern group 16 has first light shielding patterns 20 arranged at an interval corresponding to two types of convex pattern forming portions of different heights on the substrate, in which the first light shielding patterns 20 each have a substantially same area as a cross sectional area of a convex pattern. The second mask pattern group 17 has a second light shielding pattern 22 and an opening pattern 23, in which the second light shielding pattern 22 has a predetermined area and corresponds to a higher convex pattern forming portion among the two types of convex pattern forming portions, and the opening pattern corresponds to a lower convex pattern forming portion. This enables top parts of a plurality of types of convex patterns of different heights to be shaped substantially hemispherical.
摘要翻译：本发明是一种光掩模3，用于暴露涂有正性感光材料的基材。至少第一掩模图案组16和第二掩模图案组17以预定排列间距形成在透明基板上。第一掩模图案组16具有以对应于基板上不同高度的两种类型的凸起图案形成部分的间隔布置的第一遮光图案20，其中第一遮光图案20各自具有与截面大致相同的面积凸形图案的区域。第二掩模图案组17具有第二遮光图案22和开口图案23，其中第二遮光图案22具有预定区域并且对应于两种类型的凸起图案形成部分中的较高凸起图案形成部分，并且开口图案对应于下凸起图案形成部分。这使得不同高度的多种类型的凸形图案的顶部部分能够基本上成半球形。

10. 发明授权

US06303932B1 Method and its apparatus for detecting a secondary electron beam image and a method and its apparatus for processing by using focused charged particle beam 有权
标题翻译：用于检测二次电子束图像的方法及其装置，以及通过使用聚焦带电粒子束进行处理的方法及其装置
公开(公告)号：US06303932B1
公开(公告)日：2001-10-16
申请号：US09195711
申请日：1998-11-19
申请人： Yuichi Hamamura , Akira Shimase , Junzou Azuma , Michinobu Mizumura , Norimasa Nishimura , Yasuhiro Koizumi , Hidemi Koike
发明人： Yuichi Hamamura , Akira Shimase , Junzou Azuma , Michinobu Mizumura , Norimasa Nishimura , Yasuhiro Koizumi , Hidemi Koike
IPC分类号： H01J37244
CPC分类号： H01J37/28 , H01J2237/004 , H01J2237/2817
摘要： A secondary charged particle image acquisition method and its apparatus for detecting a secondary charged particle image. The method includes the steps of irradiating a surface of a specimen with a focused charged particle beam and detecting a secondary charged particle emanated from the surface of the specimen, obtaining a secondary charged particle image based on the detected secondary charged particle, irradiating a positive ion beam on the surface of the specimen where the focused charged particle beam is irradiated and inducing a conductive layer on the surface of the specimen by the irradiation of the positive ion beam and diffusing an electric charge on the surface of the conductive layer.
摘要翻译：二次带电粒子图像采集方法及其装置，用于检测二次带电粒子图像。该方法包括以下步骤：用聚焦的带电粒子束照射样品的表面并检测从样品表面发出的二次带电粒子，基于检测到的二次带电粒子获得二次带电粒子图像，照射正离子在被照射聚焦的带电粒子束的样品的表面上射束，并通过正离子束的照射在样品的表面上引导导电层，并在导电层的表面上扩散电荷。

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