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    • 4. 发明授权
    • Method for producing a fluid device, fluid device and analysis apparatus
    • 流体装置,流体装置和分析装置的制造方法
    • US07226862B2
    • 2007-06-05
    • US09873455
    • 2001-06-04
    • Cord F. StaehlerTilo StrobeltJohannes FrechPeter NommensenMartin Mueller
    • Cord F. StaehlerTilo StrobeltJohannes FrechPeter NommensenMartin Mueller
    • H01L21/302H01L21/461H01L21/20H01L21/36B01L3/02
    • B81B1/00B01L3/502707B01L2200/12B81B2201/058B81B2203/0338B81C1/00119B81C1/00357B81C2201/019Y10T436/11Y10T436/25Y10T436/2575
    • In the case of a method for producing a fluid device with a fluid structure having an active height, a basic wafer is provided, which comprises a supporting substrate, an insulating layer on the supporting substrate and a patterned layer on the supporting substrate, the thickness of the patterned layer determining the active height of the fluid structure. Following this, the fluid structure is produced in the patterned layer of the basic wafer, said fluid structure extending through the semiconductor layer. A transparent wafer is then applied so that the fluid structure is covered. Subsequently, the supporting substrate and the insulating layer are removed from the back so that the fluid structure is exposed at a second surface of the patterned layer. Finally, a second transparent wafer is attached to the exposed second surface of the semiconductor layer so that the fluid structure is covered. The essential parameter of the fluid device, viz. the active height of the fluid structure, need no longer be controlled making use of the etching parameters, but is already determined by the specifications of the starting material, e.g. an SOI wafer. This means that economy-priced fluid devices can be produced with high precision.
    • 在制造具有有效高度的流体结构的流体装置的方法的情况下,提供基本晶片,其包括支撑基板,支撑基板上的绝缘层和支撑基板上的图案层,厚度 图案化层确定流体结构的有效高度。 接下来,在基础晶片的图案化层中产生流体结构,所述流体结构延伸穿过半导体层。 然后施加透明晶片,使得覆盖流体结构。 随后,支撑基板和绝缘层从背面去除,使得流体结构在图案化层的第二表面处露出。 最后,将第二透明晶片连接到半导体层的暴露的第二表面,使得流体结构被覆盖。 流体装置的基本参数,即 流体结构的有效高度不再需要使用蚀刻参数进行控制,而是已经通过起始材料的规格来确定。 SOI晶片。 这意味着可以高精度地生产经济型流体装置。