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1. 发明授权

US06620557B1 Photo-mask, photo-mask pair, semiconductor device and method of manufacturing a semiconductor device 有权
标题翻译：照相掩模，光掩模对，半导体器件和制造半导体器件的方法
公开(公告)号：US06620557B1
公开(公告)日：2003-09-16
申请号：US09627012
申请日：2000-07-27
申请人： Kunihiro Hosono , Masayoshi Mori
发明人： Kunihiro Hosono , Masayoshi Mori
IPC分类号： G03F900
CPC分类号： G03F7/70616 , G03F7/70633
摘要： A main object of the present invention is to provide a photo-mask improved to ensure dimension with high accuracy. An actual pattern is provided on a substrate. A monitor mark for ensuring dimension of the actual pattern is also provided on the substrate. The monitor mark is provided with a coarse pattern and a high-density array pattern formed to have a density higher than the coarse pattern.
摘要翻译：本发明的主要目的是提供一种改进的光掩模以确保尺寸精度高。在基板上提供实际图案。用于确保实际图案的尺寸的监视器标记也被提供在基板上。监视器标记具有形成为具有高于粗糙图案的密度的粗图案和高密度阵列图案。

2. 发明授权

US06841314B2 Method of manufacturing a photomask 失效
标题翻译：制造光掩模的方法
公开(公告)号：US06841314B2
公开(公告)日：2005-01-11
申请号：US10162082
申请日：2002-06-05
申请人： Kunihiro Hosono
发明人： Kunihiro Hosono
IPC分类号： G03F1/32 , G03F1/68 , G03F1/80 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/84
摘要： Photomask blanks are fabricated by forming half-tone film over quartz substrate and causing a half-tone phase shift film to contain impurity becoming a color center by implanting ion at a predetermined depth of the half-tone film by means of ion-implantation. Using the above photomask blanks, a desired pattern is formed within photosensitive resist by applying photosensitive resist over the half-tone film thereover, exposing the resist through use of a desired pattern, and then developing the resist. Through the above photosensitive resist as a mask, the half-tone film is etched to form a predetermined pattern within the half-tone film. The exposed photosensitive resist is removed to fabricate a photomask.
摘要翻译：通过在石英衬底上形成半色调膜并通过离子注入在半色调膜的预定深度处注入离子使半色调相移膜含有杂质变成色心来制造光掩模坯料。使用上述光掩模坯料，通过在其上的半色调膜上施加光敏抗蚀剂，在光敏抗蚀剂中形成期望的图案，通过使用期望的图案曝光抗蚀剂，然后显影抗蚀剂。通过上述光敏抗蚀剂作为掩模，半色调膜被蚀刻以在半色调膜内形成预定图案。去除曝光的光敏抗蚀剂以制造光掩模。

3. 发明授权

US06537709B2 Photo mask having film formed from halftone material, method of manufacturing photo mask, and method of manufacturing semiconductor device 失效
公开(公告)号：US06537709B2
公开(公告)日：2003-03-25
申请号：US09912536
申请日：2001-07-26
申请人： Kouji Tange , Kunihiro Hosono
发明人： Kouji Tange , Kunihiro Hosono
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A completely-light-shielding Cr section of the scribe-line region assumes a light-shielding structure of self-aligned type. A dicing mark section assumes a light-shielding structure of Cr setback type. A pattern section of a device region assumes a light-shielding structure of HT pattern type.

4. 发明授权

US5093572A Scanning electron microscope for observation of cross section and method of observing cross section employing the same 失效
标题翻译：用于观察横截面的扫描电子显微镜及其截面的观察方法
公开(公告)号：US5093572A
公开(公告)日：1992-03-03
申请号：US601140
申请日：1990-10-23
申请人： Kunihiro Hosono
发明人： Kunihiro Hosono
IPC分类号： H01J37/28 , H01J37/30
CPC分类号： H01J37/28 , H01J37/3005 , H01J2237/3109
摘要： Disclosed are a scanning electron microscope for cross section observation capable of cutting more accurately a cross section of a specific portion of semiconductor wafer in a shorter time, and a cross section observing method employing such a microscope. The scanning electron microscope includes an SEM column 100, an FIB column 200 mounted together with SEM column 100, and a reflected-electron detector 21 for detecting electrons to be reflected from the semiconductor wafer by scanning with an electron beam 30 from the SEM. Thus, since a process of cutting a cross section to be observed by scanning with an ion beam 31 from FIB column 200 can be observed in real time by employing the reflected electrons of electron beam 30 from SEM column 100, a specific portion of the cross section can be cut more accurately in a shorter time.
摘要翻译：公开了一种用于横截面观察的扫描电子显微镜，其能够更短时间地更准确地切割半导体晶片的特定部分的截面，以及使用这种显微镜的截面观察方法。扫描电子显微镜包括SEM柱100，与SEM柱100一起安装的FIB柱200和用于通过用SEM从电子束30扫描来检测从半导体晶片反射的电子的反射电子检测器21。因此，通过使用来自SEM列100的电子束30的反射电子，可以实时观察到通过使用来自FIB列200的离子束31进行扫描来观察横截面的处理，交叉的特定部分可以在更短的时间内更精确地切割切片。

5. 发明授权

US4887283A X-ray mask and exposure method employing the same 失效
标题翻译： X射线掩模和使用其的曝光方法
公开(公告)号：US4887283A
公开(公告)日：1989-12-12
申请号：US327249
申请日：1989-03-22
申请人： Kunihiro Hosono
发明人： Kunihiro Hosono
IPC分类号： G03F1/22 , G03F7/20 , G21K5/04
CPC分类号： G03F1/22 , G03F7/70783 , G21K5/04
摘要： An X-ray mask includes a membrane formed of a material which transmits X-rays, a mask pattern formed on the surface of the membrane, the mask pattern being made of an X-ray absorbing material, and a supporting frame formed of a material which is mechanically deformed by an external signal. The supporting frame supports the membrane. In an exposure method which employs this X-ray mask, the X-ray mask is first disposed above a substrate in alignment therewith. Subsequently, distortion in the mask pattern is corrected by the application of the external signal to the supporting frame of the mask, and the substrate is then irradiated with X-rays through the mask so as to transfer the mask pattern of the mask to the substrate.
摘要翻译： X射线掩模包括由透射X射线的材料形成的膜，形成在膜的表面上的掩模图案，由X射线吸收材料制成的掩模图案，以及由材料形成的支撑框架其由外部信号机械变形。支撑框架支撑膜。在采用该X射线掩模的曝光方法中，首先将X射线掩模配置在与基板对准的上方。随后，通过将外部信号施加到掩模的支撑框架来校正掩模图案的失真，然后通过掩模用X射线照射基板，以将掩模的掩模图案转印到基板。

6. 发明授权

US07001470B2 Cleaning process for photomasks 有权
标题翻译：光掩模清洗工艺
公开(公告)号：US07001470B2
公开(公告)日：2006-02-21
申请号：US10119009
申请日：2002-04-10
申请人： Koji Tange , Yoshikazu Nagamura , Kunihiro Hosono , Yasutaka Kikuchi , Yuki Oomasa , Koichi Kido
发明人： Koji Tange , Yoshikazu Nagamura , Kunihiro Hosono , Yasutaka Kikuchi , Yuki Oomasa , Koichi Kido
IPC分类号： C25G1/02
CPC分类号： G03F1/82
摘要： A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with O3 gas solved water to eliminate organic substances adhered on a surface of the photomask (S120). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S122). After completion of these cleaning steps, the photomask is dried (S124).
摘要翻译：用O 3气溶解水清洗在玻璃基板的表面上设置有遮光涂层的光掩模，以除去粘附在光掩模表面上的有机物质（S120）。使用碱性化学品如碱性电离水或氢化水，然后清洁光掩模以消除污染（S122）。在完成这些清洁步骤之后，将光掩模干燥（S124）。

7. 发明授权

US5767974A Apparatus and method for identifying photomask pattern defects 失效
标题翻译：用于识别光掩模图案缺陷的装置和方法
公开(公告)号：US5767974A
公开(公告)日：1998-06-16
申请号：US586152
申请日：1996-01-17
申请人： Hisayoshi Higashiguchi , Kunihiro Hosono
发明人： Hisayoshi Higashiguchi , Kunihiro Hosono
IPC分类号： G01N21/956 , G03F1/84 , H01L21/027 , G01B11/00
CPC分类号： G03F1/84 , G01N21/95607
摘要： An apparatus and method for inspecting photomask pattern defects, discriminating true defects from false ones, efficiently detects only the true defects. The apparatus includes a light source; an irradiation section for transmitting light from the light source to a photomask; a light detecting section for detecting the light passing through transparent parts of the photomask; an image processing section for acquiring image data of the pattern according to signals from the light detecting section; a first condition setting section for setting a coordinate threshold that defines a misregistration defect in the pattern; a second condition setting section for setting an area threshold that defines an area defect of the pattern; a testing section that determines whether the coordinates of a pattern feature and the area of the pattern satisfy the thresholds upon comparison to a second pattern; and an output section for outputting a signal indicating a defect only when at least one of the thresholds is exceeded.
摘要翻译：用于检查光掩模图案缺陷的设备和方法，将真实的缺陷与假的缺陷区别开来，只能有效地检测真实的缺陷。该装置包括光源; 用于将光从所述光源传输到光掩模的照射部分; 光检测部，用于检测通过光掩模的透明部分的光; 图像处理部分，用于根据来自光检测部分的信号获取图案的图像数据; 第一条件设定部，用于设定限定所述图案中的对准不良的坐标阈值; 第二条件设置部分，用于设置限定所述图案的区域缺陷的面积阈值; 测试部分，其与第二图案比较，确定图案特征的坐标和图案的区域是否满足阈值; 以及输出部，用于仅在超过阈值中的至少一个时输出指示缺陷的信号。

8. 发明授权

US06338923B1 Photolithography mask having monitoring marks and manufacturing method thereof 失效
标题翻译：具有监视标记的光刻掩模及其制造方法
公开(公告)号：US06338923B1
公开(公告)日：2002-01-15
申请号：US09568536
申请日：2000-05-11
申请人： Koji Tange , Kunihiro Hosono
发明人： Koji Tange , Kunihiro Hosono
IPC分类号： G06F900
CPC分类号： G03F1/78 , G03F1/44 , H01J2237/31794
摘要： A photolithography mask having monitoring marks, which is suitable for correctly monitoring the dimensions of patterns that are intended for transfer, and its manufacturing method. The photolithography mask is manufactured by plotting mask patterns that are designed on a data address unit basis by using a prescribed plotting address unit that is larger the data address unit. Monitoring marks are formed so as to correspond to all plotting grids, respectively, that are necessary for plotting of all mask patterns. Pattern edges plotted by using all different plotting grids are distributed to the monitoring marks, respectively.
摘要翻译：具有监视标记的光刻掩模及其制造方法，其适于正确地监视用于传送的图案的尺寸。通过使用数据地址单位较大的规定的绘制地址单位绘制基于数据地址单元设计的掩模图案来制造光刻掩模。形成监测标记，以分别对应于绘制所有掩模图案所必需的所有绘图网格。通过使用所有不同的绘图网格绘制的图案边缘分别分配到监视标记。

9. 发明授权

US5464713A Phase shift mask and method for repairing a defect of a phase shift mask 失效
标题翻译：相移掩模和修复相移掩模缺陷的方法
公开(公告)号：US5464713A
公开(公告)日：1995-11-07
申请号：US309832
申请日：1994-09-21
申请人： Nobuyuki Yoshioka , Kunihiro Hosono , Junji Miyazaki
发明人： Nobuyuki Yoshioka , Kunihiro Hosono , Junji Miyazaki
IPC分类号： G03F1/32 , G03F1/68 , G03F1/72 , H01L21/027 , G03F9/00
CPC分类号： G03F1/72 , G03F1/32
摘要： In a phase shift mask and a method for repairing a defect of a phase shift mask according to the present invention, a phase shifter defective portion in which a portion of a phase shifter portion is missing is formed in a region including a boundary between a light transmitting portion and a phase shifter portion, and phase shifter defective portion is supplemented with a repairing member having substantially the same transmittance as that of phase shifter portion and capable of converting a phase of exposure light by 180.degree.. Thus, a defect of the phase shifter portion generated on or in the vicinity of the boundary between the light transmitting portion and the phase shifter portion can be repaired without impairing a function as a phase shift mask.
摘要翻译：在根据本发明的相移掩模和用于修复相移掩模的缺陷的方法中，在包括光的边界的区域中形成有移相器部分的一部分缺失的移相器缺陷部分传输部分和移相器部分，并且移相器缺陷部分补充有与移相器部分具有基本上相同的透射率的修复部件，并且能够将曝光光的相位转换180°。因此，可以在不损害作为相移掩模的功能的情况下修复在透光部分和移相器部分之间的边界附近或附近产生的移相器部分的缺陷。

10. 发明授权

US5382484A Method of correcting defects in the pattern of phase shift mask 失效
标题翻译：纠正相移掩模图案缺陷的方法
公开(公告)号：US5382484A
公开(公告)日：1995-01-17
申请号：US054616
申请日：1993-04-29
申请人： Kunihiro Hosono
发明人： Kunihiro Hosono
IPC分类号： G03F1/26 , G03F1/30 , G03F1/68 , G03F1/72 , G03F1/74 , H01L21/027 , G03F9/00
CPC分类号： G03F1/26 , G03F1/74
摘要： A method of correcting a pattern defect in a phase shift mask allowing planarization of bump and divot defects in a phase shift mask with high accuracy is disclosed. In the case of a bump defect, the region including the bump defect is irradiated with an FIB and supplied with a deposition gas, thereby forming a planarization film, and then the planarization film is etched back with the FIB. Thereafter, a layer containing ions is removed away using a laser beam. In the case of a divot defect, the region including the divot defect is planarized by application of an SOG film, and then the unnecessary part of the SOG film other than in the region of the divot defect is removed away by etching back to the interface of the SOG film with the FIB and developing the same. Thereafter, the layer containing ions is removed away utilizing a laser beam.
摘要翻译：公开了一种校正相移掩模中的图案缺陷的方法，其允许以高精度在相移掩模中平坦化凸起和凹陷缺陷。在凸起缺陷的情况下，将包含凸点缺陷的区域用FIB照射并供给沉积气体，从而形成平坦化膜，然后用FIB对平坦化膜进行回蚀。此后，使用激光束去除含有离子的层。在缺陷缺陷的情况下，通过施加SOG膜平坦化包含凹陷缺陷的区域，然后通过蚀刻回到界面来除去除了缺陷缺陷区域之外的SOG膜的不必要部分的SOG电影与FIB并开发相同。此后，使用激光束去除含有离子的层。

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