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1. 发明授权

US08445889B2 Method of patterning of nanostructures 失效
标题翻译：纳米结构图案化方法
公开(公告)号：US08445889B2
公开(公告)日：2013-05-21
申请号：US12918842
申请日：2009-02-23
申请人： Kumar Bhupendra , Yuanyuan Zhang , Zongbin Wang , Lain-Jong Li , Subodh Gautam Mhaisalkar
发明人： Kumar Bhupendra , Yuanyuan Zhang , Zongbin Wang , Lain-Jong Li , Subodh Gautam Mhaisalkar
IPC分类号： H01L29/06
CPC分类号： G03F7/0002 , B41M3/006 , B81B2207/07 , B81C1/00031 , B81C2201/0184 , B81C2201/0191 , B82Y10/00 , B82Y40/00 , C09D11/52 , H01L51/0004 , H01L51/0005 , H01L51/0048 , H01L51/0541
摘要： A method of patterning nanostructures comprising printing an ink comprising the nanostructures onto a solvent-extracting first surface such that a pattern of nanostructures is formed on the first surface.
摘要翻译：一种图案化纳米结构的方法，包括将包含纳米结构的油墨印刷到溶剂萃取的第一表面上，使得在第一表面上形成纳米结构图案。

2. 发明申请

US20110001118A1 PATTERNING OF NANOSTRUCTURES 失效
标题翻译：绘制纳米结构
公开(公告)号：US20110001118A1
公开(公告)日：2011-01-06
申请号：US12918842
申请日：2009-02-23
申请人： Kumar Bhupendra , Yuanyuan Zhang , Zongbin Wang , Lain-Jong Li , Subodh Gautam Mhaisalkar
发明人： Kumar Bhupendra , Yuanyuan Zhang , Zongbin Wang , Lain-Jong Li , Subodh Gautam Mhaisalkar
IPC分类号： H01L29/775 , B05D5/00 , B32B38/10 , B05D3/06 , B05D1/32 , B05D3/10
CPC分类号： G03F7/0002 , B41M3/006 , B81B2207/07 , B81C1/00031 , B81C2201/0184 , B81C2201/0191 , B82Y10/00 , B82Y40/00 , C09D11/52 , H01L51/0004 , H01L51/0005 , H01L51/0048 , H01L51/0541
摘要： A method of patterning nanostructures comprising printing an ink comprising the nanostructures onto a solvent-extracting first surface such that a pattern of nanostructures is formed on the first surface.
摘要翻译：一种图案化纳米结构的方法，包括将包含纳米结构的油墨印刷到溶剂萃取的第一表面上，使得在第一表面上形成纳米结构图案。

3. 发明授权

US08858776B2 Preparation of graphene sheets 有权
标题翻译：石墨烯片的制备
公开(公告)号：US08858776B2
公开(公告)日：2014-10-14
申请号：US13170624
申请日：2011-06-28
申请人： Lain-Jong Li , Ching-Yuan Su
发明人： Lain-Jong Li , Ching-Yuan Su
IPC分类号： C25B1/00 , B82Y40/00 , B82Y30/00 , C01B31/04
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/19 , C01B2204/32 , C25B1/00 , Y10S977/845
摘要： A method of preparing graphene sheets. The method includes: immersing a portion of a first electrode and a portion of a second electrode in a solution containing an acid, an anionic surfactant, a salt, an oxidizing agent, or any combination thereof as an electrolyte, the immersed portion of the first electrode including a first carbon material and the immersed portion of the second electrode including a second carbon material or a metal; causing a potential to exist between the first and second electrodes; and recovering, from the solution, graphene sheets exfoliated from the carbon material(s). Also disclosed is a method of preparing a graphene film electrode. The method includes: dissolving graphene sheets in an organic solvent to form a solution, applying the solution on a substrate, adding deionized water to the solution on the substrate so that a graphene film is formed, and drying the graphene film.
摘要翻译：制备石墨烯片的方法。该方法包括：将第一电极和第二电极的一部分浸入含有酸，阴离子表面活性剂，盐，氧化剂或其任何组合的溶液中作为电解质，第一包括第一碳材料的电极和包括第二碳材料或金属的第二电极的浸没部分; 导致在第一和第二电极之间存在潜力; 并从溶液中回收从碳材料剥离的石墨烯片。还公开了制备石墨烯膜电极的方法。该方法包括：将石墨烯片溶解在有机溶剂中以形成溶液，将溶液涂布在基材上，向基板上的溶液中加入去离子水，形成石墨烯膜，并干燥石墨烯膜。

4. 发明申请

US20140166500A1 METHOD FOR PRODUCING THIN GRAPHENE NANOPLATELETS AND PRECUSOR THEREOF 有权
标题翻译：用于生产薄片石墨烯纳米粒子的方法及其预处理剂
公开(公告)号：US20140166500A1
公开(公告)日：2014-06-19
申请号：US13719206
申请日：2012-12-18
申请人： Yi-Cheng Cheng , Lain-Jong Li , Chuen-Ming Gee , Ching-Yuan Su , Ching-Jang Lin
发明人： Yi-Cheng Cheng , Lain-Jong Li , Chuen-Ming Gee , Ching-Yuan Su , Ching-Jang Lin
IPC分类号： C01B31/04 , C25B1/00
CPC分类号： C01B31/0446 , C01B32/184 , C01B32/194 , C25B1/00
摘要： Disclosed is a method of producing thin graphene nanoplatelets, and the method includes the steps of providing a carbon precursor and a filling material, using the carbon precursor as a binding agent to mix with the filling material thoroughly, producing a composite material through a forming process, performing a heat treatment of the composite material under an atmosphere and at different temperatures to improve the electrical conductivity and adjust to an appropriate binding strength, perform a carbon conversion of the composite material with a good graphite cyrstallinity to produce a layered graphite structure of a thin graphene nanoplatelet precursor, while obtaining high quality graphene by performing an electrochemical process of the thin graphene nanoplatelet precursor, so as to achieve the mass production of the high quality thin graphene nanoplateletes with a low cost.
摘要翻译：公开了一种生产薄片石墨烯纳米片的方法，该方法包括提供碳前体和填充材料的步骤，使用碳前体作为粘合剂，充分混合填充材料，通过成型工艺生产复合材料在气氛和不同温度下对复合材料进行热处理，以提高导电性并调节至适当的粘合强度，以良好的石墨安装性进行复合材料的碳转化，以生产出一种层状石墨结构薄的石墨烯纳米血小板前体，同时通过执行薄的石墨烯纳米血小板前体的电化学过程获得高质量的石墨烯，从而以低成本实现高质量薄的石墨烯纳米片剂的大规模生产。

5. 发明授权

US08685843B2 Direct growth of graphene on substrates 有权
标题翻译：石墨烯在基材上的直接生长
公开(公告)号：US08685843B2
公开(公告)日：2014-04-01
申请号：US13346152
申请日：2012-01-09
申请人： Lain-Jong Li , Ching-Yuan Su , Ang-Yu Lu , Chih-Yu Wu , Keng-Ku Liu
发明人： Lain-Jong Li , Ching-Yuan Su , Ang-Yu Lu , Chih-Yu Wu , Keng-Ku Liu
IPC分类号： H01L21/04
CPC分类号： H01L21/0262 , B82Y30/00 , B82Y40/00 , C01B32/184 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/02444 , H01L21/02488 , H01L21/02502 , H01L21/02527 , H01L21/02612
摘要： Graphene layers can be formed on a dielectric substrate using a process that includes forming a copper thin film on a dielectric substrate; diffusing carbon atoms through the copper thin film; and forming a graphene layer at an interface between the copper thin film and the dielectric substrate.
摘要翻译：可以使用包括在电介质基板上形成铜薄膜的工艺在电介质基板上形成石墨烯层; 通过铜薄膜扩散碳原子; 以及在所述铜薄膜和所述电介质基板之间的界面处形成石墨烯层。

6. 发明申请

US20130040439A1 METHOD OF MODIFYING ELECTRICAL PROPERTIES OF CARBON NANOTUBES USING NANOPARTICLES 审中-公开
标题翻译：使用纳米颗粒改性碳纳米管的电性能的方法
公开(公告)号：US20130040439A1
公开(公告)日：2013-02-14
申请号：US13577223
申请日：2011-02-07
申请人： Jianwen Zhao , Lain-Jong Li , Peng Chen , Bee Eng Mary Chan
发明人： Jianwen Zhao , Lain-Jong Li , Peng Chen , Bee Eng Mary Chan
IPC分类号： H01L21/20 , C09K15/02 , H01B1/04 , B82Y30/00 , B82Y40/00
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , C08K3/04 , C08K9/02 , C09D7/62 , H01L51/0049 , H01L51/0558
摘要： Various embodiments relate to a method of modifying the electrical properties of carbon nanotubes. The method may include providing a substrate having carbon nanotubes deposited on a surface of the substrate, and depositing on the carbon nanotubes a coating layer comprising a mixture of nanoparticles, a matrix in which the nanoparticles are dissolved or stabilized, and an ionic liquid. A field-effect transistor including the modified carbon nanotubes is also provided.
摘要翻译：各种实施方案涉及改变碳纳米管的电性能的方法。该方法可以包括提供具有沉积在基底表面上的碳纳米管的基底，并在碳纳米管上沉积包含纳米颗粒，其中纳米颗粒被溶解或稳定的基质和离子液体的混合物的涂层。还提供了包括改性碳纳米管的场效应晶体管。

7. 发明授权

US06908773B2 ATR-FTIR metal surface cleanliness monitoring 失效
标题翻译： ATR-FTIR金属表面清洁度监测
公开(公告)号：US06908773B2
公开(公告)日：2005-06-21
申请号：US10102574
申请日：2002-03-19
申请人： Lain-Jong Li , Syun-Ming Jang , Chung-Chi Ko
发明人： Lain-Jong Li , Syun-Ming Jang , Chung-Chi Ko
IPC分类号： G01N21/35 , G01N21/55 , G01R31/26 , H01L21/66
CPC分类号： G01N21/35 , G01N21/3563 , G01N21/552 , G01N21/94 , G01N2021/3595
摘要： Attenuated total reflectance (ATR)-Fourier transform infrared (FTIR) metal surface cleanliness monitoring is disclosed. A metal surface of a semiconductor die is impinged with an infrared (IR) beam, such as can be accomplished by using an ATR technique. The IR beam as reflected by the metal surface is measured. For instance, an interferogram of the reflected IR beam may be measured. A Fourier transform of the interferogram may also be performed, in accordance with an FTIR technique. To determine whether the metal surface is contaminated, the IR beam as reflected is compared to a reference sample. For example, the Fourier transform of the interferogram may be compared to the reference sample. If there is deviation by more than a threshold, the metal surface may be concluded as being contaminated.
摘要翻译：公开了衰减全反射（ATR） - 傅立叶变换红外（FTIR）金属表面清洁度监测。半导体管芯的金属表面被红外（IR）光束照射，例如可以通过使用ATR技术来实现。测量由金属表面反射的IR光束。例如，可以测量反射的IR光束的干涉图。干涉图的傅立叶变换也可以根据FTIR技术进行。为了确定金属表面是否被污染，将反射的IR光束与参考样品进行比较。例如，干涉图的傅立叶变换可以与参考样本进行比较。如果偏差大于阈值，金属表面可能被认定为被污染。

8. 发明授权

US06657284B1 Graded dielectric layer and method for fabrication thereof 有权
标题翻译：梯度介电层及其制造方法
公开(公告)号：US06657284B1
公开(公告)日：2003-12-02
申请号：US09727634
申请日：2000-12-01
申请人： Lain-Jong Li , Shwang-Ming Jeng , Syun-Ming Jang , Chen-Hua Yu
发明人： Lain-Jong Li , Shwang-Ming Jeng , Syun-Ming Jang , Chen-Hua Yu
IPC分类号： H01L2358
CPC分类号： H01L21/76822 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76813 , H01L23/5329 , H01L2221/1031 , H01L2221/1036 , H01L2924/0002 , H01L2924/00
摘要： Within a method for forming a dielectric layer, there is first provided a substrate. There is then formed over the substrate a dielectric layer, wherein the dielectric layer is formed from a dielectric material comprising silicon, carbon and nitrogen. Preferably, a nitrogen content is graded within a thickness of the dielectric layer to provide an upper lying nitrogen rich contiguous surface layer of the dielectric layer and a lower lying nitrogen poor contiguous layer of the dielectric layer. The method contemplates a microelectronic fabrication having formed therein a dielectric layer formed in accord with the method. The method provides the resulting dielectric layer with a lower dielectric constant and enhanced adhesion properties as a substrate layer.
摘要翻译：在形成电介质层的方法中，首先提供衬底。然后在衬底上形成介电层，其中介电层由包含硅，碳和氮的电介质材料形成。优选地，氮含量在介电层的厚度内分级，以提供电介质层的上位氮富连续表面层和电介质层的较低位置的氮不良连续层。该方法考虑了在其中形成有根据该方法形成的电介质层的微电子制造。该方法提供了所得到的介电层具有较低介电常数和增强的作为基底层的粘合性能。

9. 发明授权

US06407013B1 Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties 有权
标题翻译：软等离子体氧化等离子体法，用于形成具有增强的粘合性质的含碳掺杂的含硅介电层
公开(公告)号：US06407013B1
公开(公告)日：2002-06-18
申请号：US09761422
申请日：2001-01-16
申请人： Lain-Jong Li , Tien-I Bao , Cheng-Chung Lin , Syun-Ming Jang
发明人： Lain-Jong Li , Tien-I Bao , Cheng-Chung Lin , Syun-Ming Jang
IPC分类号： H01L2131
CPC分类号： H01L21/3105 , H01L21/76826 , H01L21/76829
摘要： Within a method for forming a dielectric layer within a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a carbon doped silicon containing dielectric layer. There is then treated the carbon doped silicon containing dielectric layer with an oxidizing plasma to form from the carbon doped silicon containing dielectric layer an oxidizing plasma treated carbon doped silicon containing dielectric layer. By treating the carbon doped silicon containing dielectric layer with the oxidizing plasma, particularly under mild conditions, to form therefrom the oxidizing plasma treated carbon doped silicon containing dielectric layer, adhesion of an additional microelectronic layer upon the oxidizing plasma treated carbon doped silicon containing dielectric layer is enhanced in comparison with adhesion of the additional microelectronic layer upon the carbon doped silicon containing dielectric layer, while not compromising dielectric properties of the carbon doped silicon containing dielectric layer.
摘要翻译：在微电子制造中形成电介质层的方法中，首先提供衬底。然后在衬底上形成含碳掺杂的含硅电介质层。然后用具有氧化等离子体的碳掺杂的含硅介电层处理从含碳掺杂的含硅介电层形成氧化等离子体处理的含碳的含硅介电层。通过用氧化等离子体处理含碳掺杂的含硅电介质层，特别是在温和条件下由其形成氧化等离子体处理的含碳硅的介电层，附加的微电子层与氧化等离子体处理的碳掺杂的含硅介电层与附加的微电子层对含碳的含硅介电层的粘附性相比增强，同时不损害含碳掺杂的含硅介电层的介电性质。

10. 发明授权

US06319809B1 Method to reduce via poison in low-k Cu dual damascene by UV-treatment 有权
标题翻译：通过紫外线处理减少低k Cu双镶嵌物的通过毒物的方法
公开(公告)号：US06319809B1
公开(公告)日：2001-11-20
申请号：US09614595
申请日：2000-07-12
申请人： Weng Chang , Lain-Jong Li , Shwang Ming Jeng , Syun-Ming Jang
发明人： Weng Chang , Lain-Jong Li , Shwang Ming Jeng , Syun-Ming Jang
IPC分类号： H01L2144
CPC分类号： H01L21/76825 , H01L21/76807 , H01L21/76814
摘要： A method to reduce via poisoning in low-k copper dual damascene interconnects through ultraviolet (UV) irradiation of the damascene structure is disclosed. This is accomplished by irradiating the insulative layers each time the layers are etched to form a portion of the damascene structure. Thus, irradiation is performed once after the forming of a trench or a via, and again for the second time when the insulative layers are etched to form the remaining trench or via. The trench and hole openings of the dual damascene structure are exposed to UV light in a dry ozone environment, which then favorably alters the surface characteristics of the low-k dielectric walls which are normally hydrophobic. Hence, during etching, moisture is not absorbed into the walls. Furthermore, it is found that the UV treatment inhibits reaction between the walls and the photoresist used during the forming of the damascene structure, thereby providing clean openings without any photoresist residue, and hence, much less poisoned contacts/vias. Consequently, as copper is deposited into the clean damascene, voids are avoided, and a Cu dual damascene interconnect with low RC delay characteristics is obtained.
摘要翻译：公开了一种通过紫外（UV）照射大马士革结构来减少低k铜双镶嵌互连中的通孔中毒的方法。这是通过在每次蚀刻层以形成镶嵌结构的一部分时照射绝缘层来实现的。因此，在形成沟槽或通孔之后进行一次照射，并且再次在绝缘层被蚀刻以形成剩余的沟槽或通孔时再次进行。双重镶嵌结构的沟槽和孔洞在干燥臭氧环境中暴露于紫外线，这有利地改变通常是疏水性的低k电介质壁的表面特性。因此，在蚀刻期间，水分不会被吸收到壁中。此外，发现UV处理抑制在形成镶嵌结构期间使用的壁和光致抗蚀剂之间的反应，从而提供清洁的开口，而没有任何光致抗蚀剂残留物，因此，更少中毒的触点/通孔。因此，当铜沉积到清洁的镶嵌中时，避免了空隙，并且获得具有低RC延迟特性的铜双镶嵌互连。

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