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1. 发明授权

US5804466A Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film 失效
标题翻译：氧化锌薄膜的制造方法，半导体装置用基板的制造方法以及使用该膜的光电转换装置的制造方法
公开(公告)号：US5804466A
公开(公告)日：1998-09-08
申请号：US811288
申请日：1997-03-04
申请人： Kozo Arao , Katsumi Nakagawa , Takaharu Kondo , Yukiko Iwasaki
发明人： Kozo Arao , Katsumi Nakagawa , Takaharu Kondo , Yukiko Iwasaki
IPC分类号： C25D5/10 , C25D9/08 , H01L31/052 , H01L31/075 , H01L31/18 , H01L31/00 , B05D1/36 , H01L21/00
CPC分类号： H01L31/076 , C25D5/10 , C25D9/08 , H01L31/056 , H01L31/075 , H01L31/1828 , H01L31/1884 , Y02E10/52 , Y02E10/543 , Y02E10/548 , Y02P70/521
摘要： A process for stably producing a zinc oxide thin film by electrolysis with excellent adhesion to a substrate is described. In particular, a zinc oxide thin film suitably used as a light confining layer of a photoelectric conversion element is formed on a conductive substrate by applying a current between a conductive substrate immersed in an aqueous solution containing at least nitrate ions, zinc ions, and a carbohydrate, and an electrode immersed in the solution.
摘要翻译：描述了通过电解稳定地生产氧化锌薄膜的方法，该方法具有优异的与基底的粘合性。特别地，适合用作光电转换元件的光限制层的氧化锌薄膜通过在浸入含有至少硝酸根离子，锌离子和碳水化合物和浸在溶液中的电极。

2. 发明授权

US06172296B2 Photovoltaic cell 失效
标题翻译：光伏电池
公开(公告)号：US06172296B2
公开(公告)日：2001-01-09
申请号：US08857907
申请日：1997-05-16
申请人： Yukiko Iwasaki , Kozo Arao , Masafumi Sano , Takaharu Kondo
发明人： Yukiko Iwasaki , Kozo Arao , Masafumi Sano , Takaharu Kondo
IPC分类号： H01L310216
CPC分类号： H01L31/0236 , H01L31/02168 , H01L31/02366 , H01L31/056 , Y02E10/52
摘要： A photovoltaic cell in accordance with the present invention includes at least a metal layer, a semiconductive layer and a transparent electrode formed on a substrate. The metal layer is composed of a metal mainly containing aluminum; and has an x-ray diffraction pattern in which a (111) peak intensity is enhanced to at least 2.1 times a (200) peak intensity, at least 4.4 times a (220) peak intensity and at least 4.1 times a (311) peak intensity. The metal layer essentially consists of an aluminum-titanium alloy or an aluminum-magnesium alloy. An interlayer may be provided between the metal layer and the substrate.
摘要翻译：根据本发明的光伏电池至少包括形成在基板上的金属层，半导体层和透明电极。金属层由主要含有铝的金属组成; 并且具有其中（111）峰强度增强至（200）峰强度的至少2.1倍，（220）峰强度的至少4.4倍和至少4.1倍（311）峰的x射线衍射图金属层主要由铝 - 钛合金或铝 - 镁合金组成。可以在金属层和基板之间设置中间层。

3. 发明授权

US6110347A Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate 有权
标题翻译：通过电沉积法或无电沉积法形成氧化铟膜的方法，设置有用于半导体元件的氧化铟膜的衬底以及设置有衬底的半导体元件
公开(公告)号：US6110347A
公开(公告)日：2000-08-29
申请号：US172774
申请日：1998-10-15
申请人： Kozo Arao , Katsumi Nakagawa , Yukiko Iwasaki
发明人： Kozo Arao , Katsumi Nakagawa , Yukiko Iwasaki
IPC分类号： H01L31/0224 , H01L31/052 , H01L31/075 , H01L31/18 , C25D9/00 , B05D1/18 , C25D9/04 , C25D9/10
CPC分类号： H01L31/022466 , H01L31/056 , H01L31/075 , H01L31/1884 , Y02E10/52 , Y02E10/548
摘要： A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the couter electrode, thereby causing indium oxide film formation on the substrate, is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided. An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate, is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film-forming method are further provided.
摘要翻译：一种通过将基板和对电极浸入至少含有硝酸盐和铟离子的水溶液中并在基板和couter电极之间流动电流从而在导电基板上形成氧化铟膜的方法，从而使氧化铟膜提供了衬底上的形成。还提供了一种用于半导体元件的基板和使用该膜形成方法制造的光电元件。还公开了通过无电沉积方法形成氧化铟膜的水溶液，其至少含有硝酸盐和铟离子和酒石酸盐。还提供了一种通过使用该水溶液的无电沉积工艺在衬底上形成氧化铟膜的膜形成方法，以及使用该膜形成方法制造的半导体元件用基板和光电元件。

4. 发明授权

US5986204A Photovoltaic cell 失效
标题翻译：光伏电池
公开(公告)号：US5986204A
公开(公告)日：1999-11-16
申请号：US820565
申请日：1997-03-19
申请人： Yukiko Iwasaki , Katsumi Nakagawa , Kozo Arao
发明人： Yukiko Iwasaki , Katsumi Nakagawa , Kozo Arao
IPC分类号： H01L31/00
CPC分类号： H01L31/056 , Y02E10/52
摘要： By using an improved back reflecting layer, a photovoltaic cell having excellent migration resistance and a high photoelectric conversion efficiency is provided at high productivity. The photovoltaic cell includes a metal layer comprising a silver-aluminum alloy having a content of silver equal to or less than 30 atomic percent, the rest being aluminum, or a metal layer comprising a copper-aluminum alloy having a content of copper between 30 and 50 atomic percent, the rest being aluminum. It is preferable to form these layers at a relatively low temperature by sputtering, particularly at a temperature equal to or less than 110.degree. C. for the silver-aluminum alloy and at a temperature equal to or less than 120.degree. C. for the copper-aluminum alloy.
摘要翻译：通过使用改进的背反射层，以高生产率提供具有优异的耐迁移性和高光电转换效率的光伏电池。光伏电池包括含有银含量等于或小于30原子％的银 - 铝合金的金属层，其余为铝，或包含铜含量在30〜 50原子％，其余为铝。优选通过溅射在较低温度下形成这些层，特别是对于银 - 铝合金，等于或低于110℃的温度，并且在等于或小于120℃的温度下，对于铜 -铝合金。

5. 发明授权

US06258702B1 Method for the formation of a cuprous oxide film and process for the production of a semiconductor device using said method 有权
标题翻译：用于形成氧化亚铜膜的方法和使用所述方法生产半导体器件的方法
公开(公告)号：US06258702B1
公开(公告)日：2001-07-10
申请号：US09190100
申请日：1998-11-12
申请人： Katsumi Nakagawa , Kozo Arao , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Kozo Arao , Yukiko Iwasaki
IPC分类号： H01L2128
CPC分类号： H01L21/02565 , H01L21/02425 , H01L21/02628 , H01L21/02639 , H01L21/16 , H01L29/872 , H01L31/022425 , Y02E10/50
摘要： A film-forming method for forming a cuprous oxide film includes the steps of immersing a substrate having at least an electrically conductive surface in a solution containing copper ion and nitrate ion which are coexistent therein, and causing deposition of the cuprous oxide film on the electrically conductive surface of the substrate by way of cathodic reaction. A process for producing a semiconductor device such as a solar cell or a rectifier also is provided using the film-forming method.
摘要翻译：用于形成氧化亚铜膜的成膜方法包括以下步骤：将至少具有导电表面的基材浸入含有共存于其中的铜离子和硝酸根离子的溶液中，并使氧化亚铜膜沉积在电通过阴极反应形成衬底的导电表面。使用成膜方法也可以提供太阳能电池或整流器等半导体装置的制造方法。

6. 发明授权

US5800632A Photovoltaic device and method for manufacturing it 失效
标题翻译：光伏器件及其制造方法
公开(公告)号：US5800632A
公开(公告)日：1998-09-01
申请号：US710947
申请日：1996-09-24
申请人： Kozo Arao , Katsumi Nakagawa , Yukiko Iwasaki
发明人： Kozo Arao , Katsumi Nakagawa , Yukiko Iwasaki
IPC分类号： H01L31/0392 , H01L31/052 , H01L31/18 , H01L31/20
CPC分类号： H01L31/1884 , H01L31/03921 , H01L31/056 , H01L31/206 , Y02E10/52 , Y02P70/521 , Y10S136/291
摘要： A method for manufacturing a photovoltaic device comprising a metal layer, a first transparent conductive layer, a semiconductor layer, and a second transparent conductive layer sequentially stacked on a substrate comprising iron, comprises the steps of forming the metal layer by electro-deposition of the metal layer from a solution and forming the first transparent conductive layer by electro-deposition of the first transparent conductive layer from a solution.
摘要翻译：一种制造光伏器件的方法，包括依次层叠在包含铁的衬底上的金属层，第一透明导电层，半导体层和第二透明导电层，包括以下步骤：通过电沉积形成金属层金属层，并通过从溶液中电沉积第一透明导电层形成第一透明导电层。

7. 发明授权

US4851302A Functional ZnSe:H deposited films 失效
标题翻译：功能ZnSe：H沉积膜
公开(公告)号：US4851302A
公开(公告)日：1989-07-25
申请号：US221761
申请日：1988-07-20
申请人： Katsumi Nakagawa , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Masahiro Kanai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Masahiro Kanai
IPC分类号： H01L31/04 , G06F9/48 , H01L21/205 , H01L21/365 , H01L31/0248 , H01L31/0296 , H01L31/0392 , H01L31/068 , H01L31/18
CPC分类号： H01L31/02963 , H01L21/0237 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/0392 , H01L31/068 , H01L31/1828 , Y02E10/543 , Y02E10/547 , Y10T428/12528 , Y10T428/12792
摘要： There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is capable of efficient doping and is stable to irradiation. It can be made into a high conductivity p-type of n-type ZnSe:H:M film by doping. It can be efficiently deposited on a non-single crystal substrate such as metal, glass, and synthetic resin which was incapable of efficient depositing. Thus the invention makes it possible to form a high-functional device such as a photovoltaic element of ZnSe film on a non-single crystal substrate.
摘要翻译：提供了由锌原子，硒原子和至少氢原子组成的功能性ZnSe：H沉积膜，氢原子的含量为1〜4原子％，单位体积的结晶比为65〜85体积％％。它能够高效掺杂，对辐照稳定。可以通过掺杂制成高导电性p型n型ZnSe：H：M膜。它可以有效地沉积在不能有效沉积的非单晶衬底如金属，玻璃和合成树脂上。因此，本发明使得可以在非单晶衬底上形成诸如ZnSe膜的光电元件的高功能器件。

8. 发明授权

US5028488A Functional ZnSe.sub.1-x Te.sub.x :H deposited film 失效
标题翻译：功能ZnSe1-xTex：H沉积膜
公开(公告)号：US5028488A
公开(公告)日：1991-07-02
申请号：US226819
申请日：1988-08-01
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
IPC分类号： C30B33/00 , C30B29/22 , C30B29/30 , C30B33/02 , G02F1/03 , G02F1/05 , H01L21/205 , H01L21/365 , H01L31/0248 , H01L31/0296 , H01L31/0392 , H01L31/04 , H01L31/068 , H01L31/18
CPC分类号： H01L31/1832 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02966 , H01L31/0392 , H01L31/068 , Y02E10/547 , Y10T428/31678
摘要： A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe.sub.1-x Te.sub.x :H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way.These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate.These films are suited for the preparation of a high functional device such as a photovoltaic element.
摘要翻译：功能性ZnSe1-xTex：H膜具有高的掺杂效率，并且在光照射下的特性没有显着变化。所述膜的特征在于Se / Te的定量比在3:7至1:9的范围内以原子数比计，氢原子的含量为1至4原子％，晶粒的比例每单位体积的畴数在65至85体积％范围内。还提供了以上述方式表征的改进的高导电性的p型和n型ZnSe1-xTex：H：M膜（M代表掺杂剂）。这些沉积膜即使在金属，玻璃或合成树脂制成的非单晶衬底上也可以高沉积速率。这些膜适用于制备诸如光电元件的高功能器件。

9. 发明授权

US5008726A PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % 失效
标题翻译：含有1〜4原子％的Zn，Se，Te，H的PIN结光电元件
公开(公告)号：US5008726A
公开(公告)日：1991-04-16
申请号：US273070
申请日：1988-11-18
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
IPC分类号： H01L31/0296 , H01L31/0392 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , H01L31/02963 , H01L31/02966 , H01L31/0392 , H01L31/03925 , H01L31/075 , H01L31/1832 , Y02E10/548
摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

10. 发明授权

US4959106A Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % 失效
标题翻译：具有半导体层的光电元件包括含有至少ZN，SE和H的非单晶材料，其量为1至4原子％
公开(公告)号：US4959106A
公开(公告)日：1990-09-25
申请号：US399396
申请日：1989-08-28
申请人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
发明人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
IPC分类号： H01L21/363 , H01L21/365 , H01L31/0296 , H01L31/068 , H01L31/18
CPC分类号： H01L31/073 , H01L21/0237 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02963 , H01L31/02966 , H01L31/068 , H01L31/1828 , H01L31/1832 , Y02E10/543 , Y02E10/547
摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.
摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子，可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。

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