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1. 发明授权

US5300316A Method of forming thin oxysulfide film 失效
标题翻译：形成薄硫氧化物膜的方法
公开(公告)号：US5300316A
公开(公告)日：1994-04-05
申请号：US988786
申请日：1992-12-10
申请人： Koutoku Ohmi , Takashi Nire
发明人： Koutoku Ohmi , Takashi Nire
IPC分类号： C09K11/77 , C23C14/00 , C23C14/06 , C23C14/24 , G21K4/00 , H01L21/205 , H05B33/10 , H05B33/12 , H05B33/14 , B05D5/12 , B05D3/06
CPC分类号： C23C14/0021 , C09K11/7771 , C09K11/7789 , C23C14/0623 , G21K4/00 , H05B33/10 , H05B33/14 , G21K2004/06
摘要： In order to provide a thin oxysulfide film excellent in crystallinity and suitable for use as a luminescent layer of a thin film EL device and a thin fluorescent film for a CRT, a metal element is evaporated from an evaporation source provided in a chamber in which a sulfur gas and an oxygen gas have been introduced to combine those substances chemically on a substrate provided in the chamber to form a thin oxysulfide film on a surface of the substrate.
摘要翻译：为了提供结晶性优异且适合用作薄膜EL器件的发光层和用于CRT的薄荧光膜的薄硫氧化物膜，金属元件从设置在腔室中的蒸发源蒸发，已经引入了硫气和氧气，以将这些物质化学地组合在设置在室中的基板上，以在衬底的表面上形成薄氧硫化物膜。

2. 发明授权

US5641582A Thin-film EL element 失效
标题翻译：薄膜EL元件
公开(公告)号：US5641582A
公开(公告)日：1997-06-24
申请号：US325195
申请日：1994-10-28
申请人： Takashi Nire , Atsushi Miyakoshi
发明人： Takashi Nire , Atsushi Miyakoshi
IPC分类号： H05B33/10 , H05B33/12 , H05B33/14 , B32B9/00
CPC分类号： H05B33/145 , H05B33/10 , H05B33/12 , Y10S428/917
摘要： A thin-film EL element which does not permit the color of the emitted light to change irrespective of a change in the voltage, which remains chemically stable and which emits light of high brightness even on a low voltage. The element comprises two or more polycrystalline thin light emitting layers (4, 5, 6) and one or more thin insulating layers (3, 7). The interface between a thin film and a thin film constituting a light emitting layer is formed by epitaxial growth, and the electrical characteristics of the element are equivalent to those of a single circuit which includes two Zener diodes (12, 13) connected in series, a capacitor (14) connected in parallel with the serially connected Zener diodes, and a capacitor (15) connected to one end of the capacitor (14).
摘要翻译： PCT No.PCT / JP92 / 00958 Sec。 371日期：1994年10月28日 102（e）日期1994年10月28日PCT提交1992年7月29日PCT公布。出版物WO93 / 21744 日期：1993年10月28日一种不会使发射光的颜色发生变化的薄膜EL元件，不管电压的变化如何，即使在低电压下也能保持化学稳定并发出高亮度的光。元件包括两个或更多个多晶薄发光层（4,5,6）和一个或多个薄绝缘层（3,7）。构成发光层的薄膜和薄膜之间的界面是通过外延生长形成的，并且该元件的电特性与包括串联连接的两个齐纳二极管（12,13）的单个电路相同，与所述串联连接的齐纳二极管并联连接的电容器（14），以及与所述电容器（14）的一端连接的电容器（15）。

3. 发明授权

US5311035A Thin film electroluminescence element 失效
标题翻译：薄膜电致发光元件
公开(公告)号：US5311035A
公开(公告)日：1994-05-10
申请号：US836328
申请日：1992-03-02
申请人： Takashi Nire
发明人： Takashi Nire
IPC分类号： C09K11/77 , H01L33/06 , H05B33/14 , H01L33/00 , H01J1/62 , H01J63/04
CPC分类号： H01L33/06 , B82Y20/00 , C09K11/7745 , H05B33/14
摘要： A thin film EL element capable of emitting light of different colors desired even at a low applied voltage owing to its high luminescent efficiency and freedom from crystal defects. The thin film EL element is of the dual dielectric structure having a transparent substrate (1), and a transparent conducting film (2), a first dielectric layer (3), a luminescent layer (4), and a second dielectric layer (5), which are formed on top of the other on the substrate, the transparent conducting film and the second dielectric layer being provided with respective electrodes (6a, 6b). It is characterized in that the luminescent layer has a superlattice structure represented by (luminscent host material)/(luminescent host material):(luminescent center impurity). The luminescent layer permits the doping of various luminscent center impurities while keeping its electrical neutrality without a need for the addition of charge compensating elements.
摘要翻译： PCT No.PCT / JP89 / 00909 Sec。 371日期：1992年3月2日 102（e）1992年3月2日PCT PCT 1989年9月4日PCT公布。出版物WO91 / 03918 日期1991年3月21日。即使在低施加电压下也能够发出不同颜色的光的薄膜EL元件，由于其高的发光效率和无晶体缺陷。薄膜EL元件是具有透明基板（1）和透明导电膜（2），第一介电层（3），发光层（4）和第二介电层（5）的双电介质结构），所述透明导电膜和所述第二介电层设置有各自的电极（6a，6b）。其特征在于，发光层具有由（发光主体材料）/（发光主体材料）:(发光中心杂质）表示的超晶格结构。发光层允许掺杂各种发光中心杂质，同时保持其电中性，而不需要添加电荷补偿元件。

4. 发明授权

US07943534B2 Semiconductor device manufacturing method and semiconductor device manufacturing system 有权
标题翻译：半导体器件制造方法和半导体器件制造系统
公开(公告)号：US07943534B2
公开(公告)日：2011-05-17
申请号：US11988863
申请日：2006-07-24
申请人： Akira Matsuno , Takashi Nire
发明人： Akira Matsuno , Takashi Nire
IPC分类号： H01L21/00
CPC分类号： B23K26/0626 , B23K26/0613 , H01L21/02675 , H01L21/268 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device manufacturing method and a semiconductor device manufacturing system for irradiating a first laser light (50) and a second laser light (52) with a wavelength different from that of the first laser light to a substrate (46) to perform a thermal processing on the substrate are provided. In the step for performing the thermal processing, at least one of an irradiation intensity and an irradiation time of a first laser and a second laser is controlled to control a temperature distribution in the substrate or a film on the substrate in a depth direction.
摘要翻译：一种半导体器件制造方法和用于将具有与第一激光不同的波长的第一激光（50）和第二激光（52）照射到基板（46）的半导体器件制造系统，以进行热处理在基板上。在进行热处理的步骤中，控制第一激光器和第二激光器的照射强度和照射时间中的至少一个，以控制基板中的温度分布或深度方向上的基板上的膜。

5. 发明申请

US20090227121A1 Semiconductor device manufacturing method and semiconductor device manufacturing system 有权
标题翻译：半导体器件制造方法和半导体器件制造系统
公开(公告)号：US20090227121A1
公开(公告)日：2009-09-10
申请号：US11988863
申请日：2006-07-24
申请人： Akira Matsuno , Takashi Nire
发明人： Akira Matsuno , Takashi Nire
IPC分类号： H01L21/00 , G21K5/04
CPC分类号： B23K26/0626 , B23K26/0613 , H01L21/02675 , H01L21/268 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device manufacturing method and a semiconductor device manufacturing system for irradiating a first laser light (50) and a second laser light (52) with a wavelength different from that of the first laser light to a substrate (46) to perform a thermal processing on the substrate are provided. In the step for performing the thermal processing, at least one of an irradiation intensity and an irradiation time of a first laser and a second laser is controlled to control a temperature distribution in the substrate or a film on the substrate in a depth direction.
摘要翻译：一种半导体器件制造方法和用于将具有与第一激光不同的波长的第一激光（50）和第二激光（52）照射到基板（46）的半导体器件制造系统，以进行热处理在基板上。在进行热处理的步骤中，控制第一激光器和第二激光器的照射强度和照射时间中的至少一个，以控制基板中的温度分布或深度方向上的基板上的膜。

6. 发明授权

US5670207A Forming a thin-film EL element 失效
标题翻译：形成薄膜EL元件
公开(公告)号：US5670207A
公开(公告)日：1997-09-23
申请号：US594262
申请日：1996-01-30
申请人： Takashi Nire , Atsushi Miyakoshi
发明人： Takashi Nire , Atsushi Miyakoshi
IPC分类号： H05B33/10 , H05B33/12 , H05B33/14 , B05D5/12
CPC分类号： H05B33/145 , H05B33/10 , H05B33/12 , Y10S428/917
摘要： A thin-film EL element which does not permit the color of the emitted light to change irrespective of a change in the voltage, which remains chemically stable and which emits light of high brightness even on a low voltage. The element comprises two or more polycrystalline thin light emitting layers (4, 5, 6) and one or more thin insulating layers (3, 7). The interface between a thin film and a thin film constituting a light emitting layer is formed by epitaxial growth, and the electrical characteristics of the element are equivalent to those of a single circuit which includes two Zener diodes (12, 13) connected in series, a capacitor (14) connected in parallel with the serially connected Zener diodes, and a capacitor (15) connected to one end of the capacitor (14).
摘要翻译：不管发射光的颜色如何变化，薄膜EL元件不管电压的变化如何变化，即使在低电压下也能保持化学稳定并发出高亮度的光。元件包括两个或更多个多晶薄发光层（4,5,6）和一个或多个薄绝缘层（3,7）。构成发光层的薄膜和薄膜之间的界面是通过外延生长形成的，并且该元件的电特性与包括串联连接的两个齐纳二极管（12,13）的单个电路相同，与所述串联连接的齐纳二极管并联连接的电容器（14），以及与所述电容器（14）的一端连接的电容器（15）。

7. 发明授权

US5072263A Thin film EL device with protective film 失效
标题翻译：具有保护膜的薄膜EL器件
公开(公告)号：US5072263A
公开(公告)日：1991-12-10
申请号：US700947
申请日：1991-05-14
申请人： Takehito Watanabe , Satoshi Tanda , Takashi Nire
发明人： Takehito Watanabe , Satoshi Tanda , Takashi Nire
IPC分类号： H05B33/04 , H05B33/22
CPC分类号： H05B33/22 , H05B33/04
摘要： A thin-film EL device of which the surface is coated with a protective film of a two-layer structure consisting of an insulating film (10) and a metallic film (20) in order to obtain good air-tightness and high reliability. The insulating film (10) consists of any one of a silicon oxide film, a silicon nitride film, an aluminum oxide film or a tantalum oxide film, and the metallic film consists of a thin film of either aluminum or tantalum.

8. 发明申请

US20090032510A1 Laser Processing Apparatus and Laser Processing Method 失效
标题翻译：激光加工设备和激光加工方法
公开(公告)号：US20090032510A1
公开(公告)日：2009-02-05
申请号：US11916047
申请日：2006-05-16
申请人： Satoshi Ando , Tomobumi Muraoka , Takashi Nire , Akira Matsuno , Tadashi Kurata
发明人： Satoshi Ando , Tomobumi Muraoka , Takashi Nire , Akira Matsuno , Tadashi Kurata
IPC分类号： B23K26/00 , B23K26/16
CPC分类号： B23K26/067 , B23K26/0676 , B23K26/073 , B23K26/08
摘要： A laser processing apparatus for processing a multitude of portions to be processed in an area to be processed in a subject W to be processed, including a laser device, a focusing or imaging means for laser beams provided by the laser device, and an arranging means for arranging the subject W to be processed, in which the subject W to be processed and the focusing or imaging means are fixed, and the subject to be processed is processed while relatively shifting the laser beams and the focusing or imaging means so that the focusing or imaging means is irradiated from different areas in the laser beam, inside and outside the area to be processed, and that cumulative laser beam irradiation time during the processing of each of the multitude of portions to be processed is equalized.
摘要翻译：一种激光处理装置，用于处理要处理的被摄体W中待处理区域中的多个部分的多个部分，包括激光装置，由激光装置提供的激光束的聚焦或成像装置，以及布置装置用于将要处理的被摄体W和聚焦或成像装置固定的待处理对象W进行布置，并且在相对移动激光束和聚焦或成像装置的同时处理待处理的被摄体，使得聚焦或成像装置从激光束的不同区域照射，待处理的区域内和外部，并且处理中的每个待处理的多个部分的累积激光束照射时间相等。

9. 发明授权

US5289171A Color display apparatus 失效
标题翻译：彩色显示装置
公开(公告)号：US5289171A
公开(公告)日：1994-02-22
申请号：US825759
申请日：1992-01-21
申请人： Takashi Nire , Takehito Watanabe , Satoshi Tanda
发明人： Takashi Nire , Takehito Watanabe , Satoshi Tanda
IPC分类号： G09F9/33 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22 , G09G3/30
CPC分类号： G09F9/33
摘要： In the present invention, an EL element section (1) includes a plurality of arranged cells, each including a thin film EL element formed so as to emit white light, and a like number of predetermined-color filters (2) formed on the surface of the EL element section and corresponding to the cells such that each cell is caused to emit light in accordance with image information and the emitted light is output through the corresponding color filter to color display purposes. Thus, a very thin color display apparatus is provided in which contrast is good and the dependency of the luminance on the visual sensation is also good. The thin film EL element according to the present invention uses a luminous layer of zinc sulphide containing nitrogen, so that transitional luminescence occurs among a plurality of levels, and hence rays of light having various wavelengths are emitted to thereby provide white light containing three primary colors.
摘要翻译： PCT No.PCT / JP87 / 00469 Sec。 371日期：1988年12月29日第 102（e）日期1988年12月29日PCT提交1987年7月3日PCT公布。公开号WO88 / 00382 在本发明中，EL元件部分（1）包括多个布置的单元，每个单元包括形成为发出白光的薄膜EL元件和类似数量的预定滤色器（2）形成在EL元件部分的表面上并对应于单元，使得根据图像信息使每个单元发光，并且通过相应的滤色器输出发射的光以进行彩色显示。因此，提供了一种非常薄的彩色显示装置，其中对比度良好，并且亮度对视觉的依赖性也良好。根据本发明的薄膜EL元件使用含氮的硫化锌发光层，从而在多个层次之间发生过渡发光，因此发射具有各种波长的光线，从而提供含有三原色的白光。

10. 发明授权

US5133988A Method of manufacturing thin film EL device 失效
标题翻译：制造薄膜装置的方法
公开(公告)号：US5133988A
公开(公告)日：1992-07-28
申请号：US648111
申请日：1991-01-31
申请人： Takashi Nire , Takehito Watanabe
发明人： Takashi Nire , Takehito Watanabe
IPC分类号： C09K11/57 , C09K11/77 , H05B33/10 , H05B33/14 , H05B33/18 , H05B33/22
CPC分类号： H05B33/10 , C09K11/574 , C09K11/7717 , C09K11/7745 , C09K11/776 , H05B33/14 , H05B33/145 , H05B33/18 , H05B33/22
摘要： The disclosure describes a thin film EL device including a luminescent layer made of column polycrystals formed by independently evaporating luminescent host material and an activator and then combining the evaporated substances on a substrate. Electrons in the luminescent layer which are accelerated by an electric field applied from the outside efficiently collide against the activator without being intercepted by interfaces between crystalline particles. The thin film EL device of the present invention can be used for display, illumination, writing, reading out, and erasure of signals of photorecording mediums.

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