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    • 2. 发明授权
    • Process for fabricating a semiconductor device
    • 制造半导体器件的工艺
    • US06383907B1
    • 2002-05-07
    • US09655832
    • 2000-09-06
    • Toshiaki HasegawaKoichi IkedaHideyuki Kito
    • Toshiaki HasegawaKoichi IkedaHideyuki Kito
    • H01L2144
    • H01L21/76835H01L21/31144H01L21/76811H01L21/76813H01L21/76825H01L21/76826H01L21/76829
    • A process for producing a semiconductor device comprising an interlayer dielectric containing an organic film, which process comprises the step of forming on the interlayer dielectric a three-layer mask comprising a first mask, a second mask and a third mask in this order from the bottom, in which the first mask, the second mask and the third mask are made of materials different from one another, and the second mask is formed from a film made of a material which protects a film for forming the first mask during formation of the third mask. The process of the present invention is advantageous not only in that the second mask serves as a protecting film for the layers under the first mask during formation of the third mask, so that etching using a resist mask can be conducted during formation of the third mask, and further it becomes possible to perform a regeneration treatment for the resist mask while preventing the layers under the first mask from suffering a damage, but also in that, as a material for the first mask, the same material as that for the resist mask, for example, a carbon-containing material having a low dielectric constant can be used.
    • 一种制造包含含有有机膜的层间电介质的半导体器件的方法,该方法包括在层间电介质上形成从底部开始依次形成第一掩模,第二掩模和第三掩模的三层掩模的步骤 其中第一掩模,第二掩模和第三掩模由彼此不同的材料制成,并且第二掩模由在由形成第三掩模的第三掩模形成期间保护用于形成第一掩模的膜的材料制成的膜形成 面具。 本发明的方法不仅有利于第二掩模在形成第三掩模期间用作第一掩模下的层的保护膜,使得可以在形成第三掩模期间进行使用抗蚀剂掩模的蚀刻 并且进一步地,可以在防止第一掩模下的层遭受损伤的同时进行抗蚀剂掩模的再生处理,而且作为用于第一掩模的材料与用于抗蚀剂掩模的材料相同 例如,可以使用具有低介电常数的含碳材料。
    • 7. 发明授权
    • Feeding connector
    • 进料连接器
    • US5573417A
    • 1996-11-12
    • US419935
    • 1995-04-11
    • Shigemi HashizawaShigemitsu InabaToshiaki Hasegawa
    • Shigemi HashizawaShigemitsu InabaToshiaki Hasegawa
    • H01R13/629H01R13/639H01R13/62
    • B60L11/1818H01R13/639B60L2270/32B60L2270/34H01R13/629H01R4/48Y02T10/7005Y02T10/7072Y02T90/14
    • A feeding connector used for charging an automobile in which incomplete connection between a feeding connector half and a receiving connector half is prevented and the connection work of both connector halves can be easily carried out with small insertion force. The feeding connector according to the present invention comprises a feeding connector half and a receiving connector half, wherein the feeding connector half comprising: a case; a connector main body slidably accommodated in a front half portion of the case for accommodating a plurality of terminals; a handle attached to a rear half portion of the case; a slider for causing the connector main body in the case to slide; a rotatable lever of which intermediate portion is supported in the case, a working portion of the lever rotatably attached to the handle and an operating portion of the lever projecting out of the case; a locking means for locking the lever at a portion where the connector main body is locked to a connector main body of the receiving connector half due to a rotation of the rotatable lever; and a means for unlocking the lever.
    • 用于对汽车充电的馈电连接器,其中防止了馈电连接器半部和接收连接器半部之间的不完全连接,并且可以容易地以小的插入力执行两个连接器半部的连接工作。 根据本发明的馈电连接器包括馈电连接器半部和接收连接器半部,其中馈电连接器半部包括:壳体; 连接器主体,其可滑动地容纳在所述壳体的前半部分中,用于容纳多个端子; 手柄,其附接到所述壳体的后半部分; 用于使连接器主体在壳体中滑动的滑块; 可转动的杆,其中间部分被支撑在壳体中,杆的工作部分可旋转地附接到手柄,并且杠杆的操作部分伸出壳体; 锁定装置,用于在连接器主体被锁定到接收连接器半部的连接器主体的部分处由于可旋转杆的旋转而锁定杆; 以及用于解锁杠杆的装置。
    • 9. 发明授权
    • Low pressure CVD apparatus comprising gas distribution collimator
    • 低压CVD装置包括气体分配准直器
    • US5421888A
    • 1995-06-06
    • US175690
    • 1993-12-30
    • Toshiaki Hasegawa
    • Toshiaki Hasegawa
    • C23C16/04C23C16/44C23C16/455C23C16/00
    • C23C16/45565C23C16/045C23C16/45591
    • The present invention provides a low-pressure CVD apparatus capable of forming a film with improved step coverage and which fills up contact holes without forming any seam therein. The low-pressure CVD apparatus comprises a CVD reaction chamber (6) provided with a source gas inlet (5), a susceptor (1) for supporting a wafer (2), and a gas distributing means (3) disposed between the source gas inlet (5) and a wafer (2) supported on the susceptor (1) to distribute a source gas uniformly over the surface of the wafer (2). The gas distributing means (3) is provided with a plurality of minute pores (16) serving as passages (10a) for the source gas and extending substantially perpendicularly to the surface of the wafer (2).
    • 本发明提供一种低压CVD装置,其能够形成具有改善的台阶覆盖率的膜,并且填充接触孔而不在其中形成任何接缝。 低压CVD装置包括设置有源气体入口(5)的CVD反应室(6),用于支撑晶片(2)的基座(1)和设置在源气体之间的气体分配装置 入口(5)和支撑在基座(1)上的晶片(2),以将源气体均匀地分布在晶片(2)的表面上。 气体分配装置(3)设置有用作源气体的通道(10a)的多个微孔(16),并基本上垂直于晶片(2)的表面延伸。
    • 10. 发明授权
    • Method of making a metal plug
    • 制作金属插头的方法
    • US5374591A
    • 1994-12-20
    • US856115
    • 1992-03-23
    • Toshiaki HasegawaJunichi Sato
    • Toshiaki HasegawaJunichi Sato
    • H01L21/285H01L21/28H01L21/302H01L21/3065H01L21/768H01L21/441
    • H01L21/76802H01L21/76841H01L21/76877
    • A metal plug is formed in a connection hole such as a via hole or a contact hole to provide an interconnection between multilayer wires in a semiconductor integrated circuit. First, an adhesion layer is deposited on an insulating film, and an area of the adhesion layer is etched away isotropic etching through an opening in a resist mask, the area being larger than the opening in the resist mask. Thereafter, the insulating film is etched through the opening in the resist mask by anisotropic etching, forming a connection hole in the insulating film. Then, a metal layer such as a blanket tungsten layer is deposited on the adhesion layer and in the connection hole. The metal layer is etched back and the adhesion layer is etched away, leaving the metal layer as a metal plug in the connection hole.
    • 金属插塞形成在诸如通孔或接触孔的连接孔中,以在半导体集成电路中的多层导线之间形成互连。 首先,在绝缘膜上沉积粘合层,并且通过抗蚀剂掩模中的开口蚀刻粘附层的区域各向同性蚀刻,该面积大于抗蚀剂掩模中的开口。 此后,通过各向异性蚀刻在抗蚀剂掩模中的开口蚀刻绝缘膜,在绝缘膜中形成连接孔。 然后,在粘合层和连接孔中沉积诸如覆盖钨层的金属层。 金属层被回蚀刻,并且粘附层被蚀刻掉,使金属层作为连接孔中的金属塞。