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1. 发明授权

US09424904B2 Magnetic memory devices including oxide multiferroic material 有权
标题翻译：磁记忆装置包括氧化物多铁性材料
公开(公告)号：US09424904B2
公开(公告)日：2016-08-23
申请号：US14526489
申请日：2014-10-28
申请人： Kilho Lee , Sangyong Kim , Woojin Kim , KyungTae Nam
发明人： Kilho Lee , Sangyong Kim , Woojin Kim , KyungTae Nam
IPC分类号： G11C11/02 , G11C11/16 , G11C11/22
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/221
摘要： A magnetic memory device is provided. The magnetic memory device includes a plurality of variable resistance devices connected to a word line, and a plurality of bit lines, each of which provides an electrical pathway between a corresponding one of the variable resistance devices and a read and write circuit. Each of the variable resistance devices includes a free layer and a pinned layer spaced apart from each other and having a tunnel barrier interposed therebetween, an assistant layer spaced apart from the tunnel barrier and having the free layer interposed therebetween, and an exchange coupling layer arranged between the free layer and the assistant layer. The exchange coupling layer has an electric polarization, which results from its ferroelectric property, and having a direction that can be changed by a voltage applied to the corresponding one of the bit lines.
摘要翻译：提供磁存储器件。磁存储器件包括连接到字线的多个可变电阻器件和多个位线，每个位线提供相应的一个可变电阻器件与读写电路之间的电路径。每个可变电阻装置包括自由层和钉扎层，彼此间隔开并具有插入其间的隧道势垒，辅助层与隧道势垒间隔开并且具有插入其间的自由层，并且布置有交换耦合层在自由层和辅助层之间。交换耦合层具有由其铁电性质产生的电极化，并且具有可以通过施加到相应的一个位线的电压而改变的方向。

2. 发明授权

US09276198B2 Magnetic memory devices 有权
标题翻译：磁存储器件
公开(公告)号：US09276198B2
公开(公告)日：2016-03-01
申请号：US13967340
申请日：2013-08-14
申请人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
发明人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
IPC分类号： H01L43/08 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659
摘要： A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.
摘要翻译：根据实施例的磁存储器件包括衬底上的第一参考磁性层，第一参考磁性层上的第二参考磁性层，第一参考磁性层和第二参考磁性层之间的自由层，第一隧道势垒层在第一参考磁性层和自由层之间，以及在第二参考磁性层和自由层之间的第二隧道势垒层。第一参考磁性，第二参考磁性和自由层各自具有基本上垂直于衬底顶表面的磁化方向。第一隧道势垒层的电阻面积乘积（RA）值大于第二隧道势垒层的电阻面积积（RA）值。

3. 发明授权

US09206148B2 Method for producing 5-hydroxymethyl-2-furfural from maize syrup containing fructose 有权
标题翻译：从含有果糖的玉米糖浆中生产5-羟甲基-2-糠醛的方法
公开(公告)号：US09206148B2
公开(公告)日：2015-12-08
申请号：US14383439
申请日：2012-07-26
申请人： Jin Ku Cho , Jaewon Jeong , Sangyong Kim , Bora Kim , Baek-Jin Kim , Seunghan Shin , Dohoon Lee
发明人： Jin Ku Cho , Jaewon Jeong , Sangyong Kim , Bora Kim , Baek-Jin Kim , Seunghan Shin , Dohoon Lee
IPC分类号： C07D307/50 , B01J31/08 , C07D307/48
CPC分类号： C07D307/50 , B01J31/08 , C07D307/48 , Y02P20/582
摘要： Provided herein is a method for producing 5-hydroxymethyl-2-furfural (HMF) from maize syrup containing fructose including a conversion step in which a reaction product containing the 5-hydroxymethyl-2-furfural is produced by mixing and heating the maize syrup, a dioxane solvent and a solid acid catalyst, thus providing an advantage that the solvent can be easily isolated and the isolated solvent can be reused because dioxane is used as the solvent, and an advantage that the catalyst can be easily isolated and the isolated catalyst can be easily reused because a nonuniform solid acid catalyst is used.
摘要翻译：本文提供了含有果糖的玉米糖浆中的5-羟甲基-2-糠醛（HMF）的制备方法，包括转化步骤，其中通过混合和加热玉米糖浆产生含有5-羟甲基-2-糠醛的反应产物，二恶烷溶剂和固体酸催化剂，从而提供了可以容易地分离溶剂并且由于使用二恶烷作为溶剂可以重复使用分离的溶剂的优点，以及可以容易地分离催化剂并且分离的催化剂可以由于使用不均匀的固体酸催化剂，容易重复使用。

4. 发明授权

US09761795B2 Method and processing apparatus for fabricating a magnetic resistive random access memory device 有权
公开(公告)号：US09761795B2
公开(公告)日：2017-09-12
申请号：US15390699
申请日：2016-12-26
申请人： Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
发明人： Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
IPC分类号： H01L21/00 , H01L43/12 , H01L43/08 , H01L43/02 , H01L43/10 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

5. 发明申请

US20160301000A1 Magnetic Memory Devices Having Perpendicular Magnetic Tunnel Structures Therein 审中-公开
标题翻译：具有垂直磁隧道结构的磁存储器件
公开(公告)号：US20160301000A1
公开(公告)日：2016-10-13
申请号：US15185693
申请日：2016-06-17
申请人： Sangyong Kim , Whankyun Kim , Sechung Oh
发明人： Sangyong Kim , Whankyun Kim , Sechung Oh
IPC分类号： H01L43/02 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08
摘要： Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the embodiments, the blocking layer is a thermally treated layer and an amorphous state of the blocking layer is maintained during and post thermal treatment.
摘要翻译：磁存储器单元包括磁性隧道结和第一电极，其通过第一导电结构电耦合到磁性隧道结。该导电结构包括在阻挡层和磁性隧道结之间延伸的阻挡层和种子层。阻挡层形成为无定形金属化合物。在一些实施例中，阻挡层是热处理层，并且在热处理期间和之后保持阻挡层的无定形状态。

6. 发明授权

US08871957B2 Metal catalyst composition for producing furfural derivatives from raw materials of lignocellulosic biomass, and method for producing furfural derivatives using the composition 有权
标题翻译：用于从木质纤维素生物质原料生产糠醛衍生物的金属催化剂组合物，以及使用该组合物生产糠醛衍生物的方法
公开(公告)号：US08871957B2
公开(公告)日：2014-10-28
申请号：US13640764
申请日：2011-04-14
申请人： Jin Ku Cho , Sangyong Kim , Dohoon Lee , Bora Kim , Jaewon Jeong
发明人： Jin Ku Cho , Sangyong Kim , Dohoon Lee , Bora Kim , Jaewon Jeong
IPC分类号： C07D307/48 , B01J27/13 , B01J27/132 , B01J23/652 , B01J31/02 , C07D307/50 , B01J37/04 , B01J23/46
CPC分类号： B01J27/132 , B01J23/462 , B01J23/6522 , B01J27/13 , B01J31/0225 , B01J31/0227 , B01J31/0284 , B01J37/04 , C07D307/48 , C07D307/50
摘要： The present invention relates to a metal catalyst composition for producing furfural derivatives from raw materials of lignocellulosic biomass, and method for producing furfural derivatives using the composition. The present invention comprises ruthenium chloride (RuCl3) and chromium chloride (CrCl2). The chromium chloride (CCl2) is from 300 to 500 parts by weight on the basis of 100 parts by weight of the ruthenium chloride (RuCl3). Unlike conventional furfural derivatives producing process that should go through multi step processes such as pre-process, saccharification process, etc, the present invention has an advantage of producing furfural derivatives from lignocellulosic raw material only through simple reaction process in one reaction apparatus by mixing various kinds of metal catalyst at an optimum ratio.
摘要翻译：本发明涉及由木质纤维素生物质原料生产糠醛衍生物的金属催化剂组合物，以及使用该组合物生产糠醛衍生物的方法。本发明包括氯化钌（RuCl 3）和氯化铬（CrCl 2）。基于100重量份氯化钌（RuCl 3），氯化铬（CCl 2）为300〜500重量份。与常规的糠醛衍生物生产方法不同，通常需要通过预处理，糖化过程等多步法，本发明仅通过在一个反应装置中通过简单的反应方法从木质纤维素原料生产糠醛衍生物的优点是通过混合各种各种金属催化剂的最佳比例。

7. 发明授权

US09570673B2 Method and processing apparatus for fabricating a magnetic resistive random access memory device 有权
标题翻译：用于制造磁阻随机存取存储器件的方法和处理装置
公开(公告)号：US09570673B2
公开(公告)日：2017-02-14
申请号：US14794796
申请日：2015-07-08
申请人： Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
发明人： Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
IPC分类号： H01L21/00 , H01L43/08 , H01L43/10 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.
摘要翻译：提供制造MRAM器件的方法与用于制造MRAM器件的处理设备一起提供。所述方法可以包括形成铁磁层，将铁磁层冷却至约50°K至约300°K范围内的温度，形成和氧化冷却的铁磁层上的一个或多个Mg层以形成MgO结构，在MgO结构上形成自由层，并在自由层上形成覆盖层。

8. 发明申请

US20130345446A1 METHOD FOR PREPARING A FURFURANOL-BASED COMPOUND AND 2-FURANCARBOXYLIC ACID-BASED COMPOUND USING AN IONIC LIQUID AS A SOLVENT 有权
标题翻译：使用作为溶剂的离子液体制备基于呋喃丙醇的化合物和基于2-呋喃羧酸的化合物的方法
公开(公告)号：US20130345446A1
公开(公告)日：2013-12-26
申请号：US14000500
申请日：2012-03-19
申请人： Baek Jin Kim , Jin Ku Cho , Sangyong Kim , Young Gyu Kim , Eun-Sil Kang , Da Won Chae
发明人： Baek Jin Kim , Jin Ku Cho , Sangyong Kim , Young Gyu Kim , Eun-Sil Kang , Da Won Chae
IPC分类号： C07D307/68 , C07D307/44
CPC分类号： C07D307/68 , C07D307/44 , C07D307/64
摘要： This invention relates to a method of, in an eco-friendly manner, preparing a furfuranol-based compound and a 2-furancarboxylic acid-based compound using an ionic liquid as a reaction solvent, which includes reacting a furfural-based compound with a hydroxide of an alkali metal or an alkaline earth metal using an ionic liquid as the solvent, thus obtaining a furfuranol-based compound and a 2-furancarboxylic acid-based compound, and in which water is not used as the reaction solvent, thus preventing the generation of reaction wastewater, and the ionic liquid used as the solvent can be easily recovered and reused.
摘要翻译：本发明涉及一种以环保方式制备糠醇类化合物和使用离子液体作为反应溶剂的2-呋喃羧酸系化合物的方法，该方法包括使糠醛基化合物与氢氧化物反应使用离子液体作为溶剂的碱金属或碱土类金属，得到糠醛类化合物和2-呋喃羧酸类化合物，其中不使用水作为反应溶剂，从而防止产生的反应废水，并且用作溶剂的离子液体可以容易地回收和再利用。

9. 发明申请

US20130030194A1 Metal Catalyst Composition for Producing Furfural Derivatives from Raw Materials of Lignocellulosic Biomass, and Method for Producing Furfural Derivatives Using the Composition 有权
标题翻译：用于从木质纤维素生物质原料生产糠醛衍生物的金属催化剂组合物和使用该组合物生产糠醛衍生物的方法
公开(公告)号：US20130030194A1
公开(公告)日：2013-01-31
申请号：US13640764
申请日：2011-04-14
申请人： Jin Ku Cho , Sangyong Kim , Dohoon Lee , Bora Kim , Jaewon Jeong
发明人： Jin Ku Cho , Sangyong Kim , Dohoon Lee , Bora Kim , Jaewon Jeong
IPC分类号： C07D307/50 , B01J27/138 , B01J31/26 , B01J27/128 , B01J27/13 , B01J27/08 , B01J27/132
CPC分类号： B01J27/132 , B01J23/462 , B01J23/6522 , B01J27/13 , B01J31/0225 , B01J31/0227 , B01J31/0284 , B01J37/04 , C07D307/48 , C07D307/50
摘要： The present invention relates to a metal catalyst composition for producing furfural derivatives from raw materials of lignocellulosic biomass, and method for producing furfural derivatives using the composition. The present invention comprises ruthenium chloride (RuCl3) and chromium chloride (CrCl2). The chromium chloride (CrCl2) is from 300 to 500 parts by weight on the basis of 100 parts by weight of the ruthenium chloride (RuCl3). Unlike conventional furfural derivatives producing process that should go through multi step processes such as pre-process, saccharification process, etc, the present invention has an advantage of producing furfural derivatives from lignocellulosic raw material only through simple reaction process in one reaction apparatus by mixing various kinds of metal catalyst at an optimum ratio.
摘要翻译：本发明涉及由木质纤维素生物质原料生产糠醛衍生物的金属催化剂组合物，以及使用该组合物生产糠醛衍生物的方法。本发明包括氯化钌（RuCl 3）和氯化铬（CrCl 2）。基于100重量份氯化钌（RuCl 3），氯化铬（CrCl 2）为300-500重量份。与常规的糠醛衍生物生产方法不同，通常需要通过预处理，糖化过程等多步法，本发明仅通过在一个反应装置中通过简单的反应方法从木质纤维素原料生产糠醛衍生物的优点是通过混合各种各种金属催化剂的最佳比例。

10. 发明申请

US20150137287A1 MAGNETIC MEMORY DEVICES HAVING PERPENDICULAR MAGNETIC TUNNEL STRUCTURES THEREIN 有权
标题翻译：具有普通磁性隧道结构的磁记忆体装置
公开(公告)号：US20150137287A1
公开(公告)日：2015-05-21
申请号：US14473334
申请日：2014-08-29
申请人： Sangyong Kim , Whankyun KIM , Sechung OH
发明人： Sangyong Kim , Whankyun KIM , Sechung OH
IPC分类号： H01L43/08 , H01L43/02
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08
摘要： Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the embodiments, the blocking layer is a thermally treated layer and an amorphous state of the blocking layer is maintained during and post thermal treatment.
摘要翻译：磁存储器单元包括磁性隧道结和第一电极，其通过第一导电结构电耦合到磁性隧道结。该导电结构包括在阻挡层和磁性隧道结之间延伸的阻挡层和种子层。阻挡层形成为无定形金属化合物。在一些实施例中，阻挡层是热处理层，并且在热处理期间和之后保持阻挡层的无定形状态。

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