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1. 发明授权

US08390776B2 Thin film transistor array and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US08390776B2
公开(公告)日：2013-03-05
申请号：US13450643
申请日：2012-04-19
申请人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
发明人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
IPC分类号： G02F1/13
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.
摘要翻译：制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

2. 发明授权

US08184251B2 Thin film transistor array and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US08184251B2
公开(公告)日：2012-05-22
申请号：US12498526
申请日：2009-07-07
申请人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
发明人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
IPC分类号： G02F1/1333
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.
摘要翻译：制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

3. 发明授权

US07915689B2 Thin film transistor, display device including the same and manufacturing method thereof 有权
标题翻译：薄膜晶体管，包括该薄膜晶体管的显示装置及其制造方法
公开(公告)号：US07915689B2
公开(公告)日：2011-03-29
申请号：US12260464
申请日：2008-10-29
申请人： Sung-Haeng Cho , Ki-Hun Jeong , Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Seung-Hwan Shim
发明人： Sung-Haeng Cho , Ki-Hun Jeong , Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Seung-Hwan Shim
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/1229 , H01L27/1288 , H01L29/04 , H01L29/78696
摘要： A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.
摘要翻译：薄膜晶体管，显示装置及其制造方法。薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。第一结晶度高于第二结晶度。

4. 发明授权

US07858412B2 Thin-film transistor substrate and method of fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US07858412B2
公开(公告)日：2010-12-28
申请号：US12498534
申请日：2009-07-07
申请人： Joo-Han Kim , Ki-Hun Jeong , Seung-Hwan Shim
发明人： Joo-Han Kim , Ki-Hun Jeong , Seung-Hwan Shim
IPC分类号： H01L21/3213 , H01L21/336
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/1288 , Y10S438/951
摘要： A thin-film transistor (“TFT”) substrate and a method of fabricating the same include: an insulating substrate; gate wiring which is disposed on the insulating substrate and includes a gate line and a gate electrode; a semiconductor pattern which is disposed on the gate electrode; data wiring which is disposed on the semiconductor pattern and includes a data line, a source electrode, and a drain electrode; a passivation layer which includes a first sub-passivation layer and a second sub-passivation layer deposited on the data wiring; and a pixel electrode which is electrically connected to the drain electrode through a contact hole disposed in the passivation layer, wherein the second sub-passivation layer has a lower density than the first sub-passivation layer.
摘要翻译：薄膜晶体管（“TFT”）基板及其制造方法包括：绝缘基板; 栅极布线，其布置在所述绝缘基板上并且包括栅极线和栅电极; 设置在栅电极上的半导体图案; 数据布线，其布置在半导体图案上并且包括数据线，源电极和漏电极; 钝化层，其包括沉积在数据布线上的第一子钝化层和第二子钝化层; 以及通过设置在所述钝化层中的接触孔电连接到所述漏电极的像素电极，其中所述第二子钝化层具有比所述第一子钝化层更低的密度。

5. 发明授权

US08450742B2 Thin film transistor having semiconductor with different crystallinities and manufacturing method thereof 有权
公开(公告)号：US08450742B2
公开(公告)日：2013-05-28
申请号：US13026403
申请日：2011-02-14
申请人： Sung-Haeng Cho , Ki-Hun Jeong , Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Seung-Hwan Shim
发明人： Sung-Haeng Cho , Ki-Hun Jeong , Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Seung-Hwan Shim
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/1229 , H01L27/1288 , H01L29/04 , H01L29/78696
摘要： A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

6. 发明授权

US08278661B2 Thin film transistor, display device including the same, and method for manufacturing the same 有权
标题翻译：薄膜晶体管，包括该薄膜晶体管的显示装置及其制造方法
公开(公告)号：US08278661B2
公开(公告)日：2012-10-02
申请号：US12206327
申请日：2008-09-08
申请人： Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Sung-Haeng Cho , Ki-Hun Jeong , Seung-Hwan Shim
发明人： Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Sung-Haeng Cho , Ki-Hun Jeong , Seung-Hwan Shim
IPC分类号： G06F3/038
CPC分类号： H01L29/78669 , G09G3/3233 , G09G2300/0439 , G09G2300/0842 , H01L27/1229 , H01L27/1251 , H01L27/1288 , H01L27/3262 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon.
摘要翻译：显示装置及其制造方法包括第一薄膜晶体管，其包括第一控制电极，设置在第一控制电极上的第一半导体，以及在第一半导体上彼此相对的第一输入电极和第一输出电极; 以及第二薄膜晶体管，其包括第二控制电极，设置在第二控制电极上的第二半导体，以及在第二半导体上彼此相对的第二输入电极和第二输出电极，其中第一半导体包括第一下半导体包括多晶硅，以及设置在所述第一下半导体上的第一上半导体，所述第一上半导体包括非晶硅。

7. 发明授权

US08258510B2 Thin film transistor, display device including the same, and method of manufacturing the display device 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US08258510B2
公开(公告)日：2012-09-04
申请号：US12390020
申请日：2009-02-20
申请人： Joo-Han Kim , Seung-Hwan Shim
发明人： Joo-Han Kim , Seung-Hwan Shim
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L27/1229 , H01L27/1251 , H01L27/1288 , H01L29/04 , H01L29/66765 , H01L29/7866 , H01L29/78696
摘要： A display device including the thin film transistor, and a method of manufacturing the display device are provided. The thin film transistor comprising a first gate electrode, a second gate electrode formed on the first gate electrode, a first semiconductor formed on the first gate electrode and including a polycrystalline semiconductor, a second semiconductor formed on the second gate electrode and including an amorphous semiconductor.
摘要翻译：提供了包括薄膜晶体管的显示装置和制造显示装置的方法。所述薄膜晶体管包括第一栅电极，形成在所述第一栅电极上的第二栅电极，形成在所述第一栅极上并包括多晶半导体的第一半导体，形成在所述第二栅极上并包括非晶半导体的第二半导体。

8. 发明申请

US20090212288A1 THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE DISPLAY DEVICE 有权
标题翻译：薄膜晶体管，包括其的显示装置和制造显示装置的方法
公开(公告)号：US20090212288A1
公开(公告)日：2009-08-27
申请号：US12390020
申请日：2009-02-20
申请人： Joo-Han Kim , Seung-Hwan Shim
发明人： Joo-Han Kim , Seung-Hwan Shim
IPC分类号： H01L29/786 , H01L33/00 , H01L21/336
CPC分类号： H01L29/4908 , H01L27/1229 , H01L27/1251 , H01L27/1288 , H01L29/04 , H01L29/66765 , H01L29/7866 , H01L29/78696
摘要： A display device including the thin film transistor, and a method of manufacturing the display device are provided. The thin film transistor comprising a first gate electrode, a second gate electrode formed on the first gate electrode, a first semiconductor formed on the first gate electrode and including a polycrystalline semiconductor, a second semiconductor formed on the second gate electrode and including an amorphous semiconductor.
摘要翻译：提供了包括薄膜晶体管的显示装置和制造显示装置的方法。所述薄膜晶体管包括第一栅电极，形成在所述第一栅电极上的第二栅电极，形成在所述第一栅极上并包括多晶半导体的第一半导体，形成在所述第二栅极上并包括非晶半导体的第二半导体。

9. 发明授权

US07935580B2 Display substrate, method of manufacturing the same and display device having the same 有权
标题翻译：显示基板及其制造方法以及具有该基板的显示装置
公开(公告)号：US07935580B2
公开(公告)日：2011-05-03
申请号：US11864165
申请日：2007-09-28
申请人： Min-Seok Oh , Shi-Yul Kim , Sang-Gab Kim , Joo-Han Kim , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Min-Seok Oh , Shi-Yul Kim , Sang-Gab Kim , Joo-Han Kim , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L21/00
CPC分类号： G02F1/1362 , G02F1/136213 , G02F2001/136222 , G02F2001/136236
摘要： A display substrate includes a gate line, a storage capacitor, a source line, a switching element, a pixel electrode, and a color filter. The gate line is formed on a base substrate. The storage capacitor has a storage line substantially parallel to the gate line. The source line crosses the gate line to define a pixel area. The switching element is connected to the gate line and the source line. The pixel electrode contacts the switching element. The color filter pattern is formed between the base substrate and the pixel electrode such that the color filter pattern contracts the base substrate and the pixel electrode. Thus, the color filter pattern is formed on the display substrate using a three-mask process.
摘要翻译：显示基板包括栅极线，存储电容器，源极线，开关元件，像素电极和滤色器。栅极线形成在基底基板上。存储电容器具有基本上平行于栅极线的存储线。源极线穿过栅极线以定义像素区域。开关元件连接到栅极线和源极线。像素电极与开关元件接触。滤色器图案形成在基底基板和像素电极之间，使得滤色器图案使基底基板和像素电极收缩。因此，使用三掩模处理在显示基板上形成滤色器图案。

10. 发明申请

US20080268581A1 Method of manufacturing thin film transistor substrate 失效
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US20080268581A1
公开(公告)日：2008-10-30
申请号：US12009253
申请日：2008-01-16
申请人： Hong-Kee Chin , Yu-Gwang Jeong , Sang-Gab Kim , Joo-Han Kim , Joo-Ae Youn , Min-Seok Oh , Jong-Hyun Choung , Seung-Ha Choi
发明人： Hong-Kee Chin , Yu-Gwang Jeong , Sang-Gab Kim , Joo-Han Kim , Joo-Ae Youn , Min-Seok Oh , Jong-Hyun Choung , Seung-Ha Choi
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method of manufacturing a TFT substrate includes: sequentially forming a transparent conductive layer and an opaque conductive layer on a substrate, patterning the transparent conductive layer and the opaque conductive layer by using a first mask to form a gate pattern including a pixel electrode, and forming a gate insulating layer and a semiconductor layer above the substrate. A contact hole is formed which exposes a portion of the pixel electrode and a semiconductor pattern using a second mask. A conductive layer is formed above the substrate and patterned to form a source/drain pattern including a drain electrode which overlaps a portion of the pixel electrode. Portions of the gate insulating layer and the opaque conductive layer above the pixel electrode are removed except a portion overlapping the drain electrode, by using a third mask.
摘要翻译：一种制造TFT基板的方法包括：在基板上依次形成透明导电层和不透明导电层，通过使用第一掩模对透明导电层和不透明导电层进行构图，形成包括像素电极的栅极图案，以及在基板上形成栅极绝缘层和半导体层。使用第二掩模形成露出一部分像素电极和半导体图案的接触孔。在衬底上形成导电层，并被图案化以形成包括与像素电极的一部分重叠的漏电极的源极/漏极图案。除了与漏电极重叠的部分之外，通过使用第三掩模除去栅极绝缘层和像素电极上方的不透明导电层的部分。

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