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1. 发明授权

US07995371B2 Threshold device for a memory array 失效
标题翻译：内存阵列的阈值设备
公开(公告)号：US07995371B2
公开(公告)日：2011-08-09
申请号：US11881473
申请日：2007-07-26
申请人： Darrell Rinerson , Julie Casperson Brewer , Christophe J. Chevallier , Wayne Kinney , Roy Lambertson , Lawrence Schloss
发明人： Darrell Rinerson , Julie Casperson Brewer , Christophe J. Chevallier , Wayne Kinney , Roy Lambertson , Lawrence Schloss
IPC分类号： G11C11/00
CPC分类号： G11C7/02 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/71 , G11C2213/76 , H01L27/2418 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/147
摘要： A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold device and a memory element that stores data as a plurality of conductivity profiles. The threshold device is operative to impart a characteristic I-V curve that defines current flow through the memory element as a function of applied voltage across the terminals during data operations. The threshold device substantially reduces or eliminates current flow through half-selected or un-selected memory plugs and allows a sufficient magnitude of current to flow through memory plugs that are selected for read and write operations. The threshold device reduces or eliminates data disturb in half-selected memory plugs and increases S/N ratio during read operations.
摘要翻译：公开了一种阈值装置，其包括彼此接触并且由多种不同介电材料制成的多个相邻隧道势垒层。具有第一和第二端子的存储器插头包括与第一和第二端子串联的阈值装置和存储数据作为多个导电率曲线的存储元件。阈值装置可操作以在数据操作期间根据施加的电压施加限定通过存储元件的电流的特征I-V曲线。阈值装置基本上减少或消除了通过半选择或未选择的存储器插头的电流，并且允许足够大的电流流过被选择用于读取和写入操作的存储器插头。阈值器件减少或消除半选择的存储器插头中的数据干扰，并在读取操作期间增加S / N比。

2. 发明申请

US20090027976A1 Threshold device for a memory array 失效
标题翻译：内存阵列的阈值设备
公开(公告)号：US20090027976A1
公开(公告)日：2009-01-29
申请号：US11881473
申请日：2007-07-26
申请人： Julie Casperson Brewer , Darrell Rinerson , Christophe J. Chevallier , Wayne Kinney , Roy Lambertson , Lawrence Schloss
发明人： Julie Casperson Brewer , Darrell Rinerson , Christophe J. Chevallier , Wayne Kinney , Roy Lambertson , Lawrence Schloss
IPC分类号： G11C7/00
CPC分类号： G11C7/02 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/71 , G11C2213/76 , H01L27/2418 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/147
摘要： A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold device and a memory element that stores data as a plurality of conductivity profiles. The threshold device is operative to impart a characteristic I-V curve that defines current flow through the memory element as a function of applied voltage across the terminals during data operations. The threshold device substantially reduces or eliminates current flow through half-selected or un-selected memory plugs and allows a sufficient magnitude of current to flow through memory plugs that are selected for read and write operations. The threshold device reduces or eliminates data disturb in half-selected memory plugs and increases S/N ratio during read operations.
摘要翻译：公开了一种阈值装置，其包括彼此接触并且由多种不同介电材料制成的多个相邻隧道势垒层。具有第一和第二端子的存储器插头包括与第一和第二端子串联的阈值装置和存储数据作为多个导电率曲线的存储元件。阈值装置可操作以在数据操作期间根据施加的电压施加限定通过存储元件的电流的特征I-V曲线。阈值装置基本上减少或消除了通过半选择或未选择的存储器插头的电流，并且允许足够大的电流流过被选择用于读取和写入操作的存储器插头。阈值器件减少或消除半选择的存储器插头中的数据干扰，并在读取操作期间增加S / N比。

3. 发明授权

US08395928B2 Threshold device for a memory array 有权
公开(公告)号：US08395928B2
公开(公告)日：2013-03-12
申请号：US13206460
申请日：2011-08-09
申请人： Julie Casperson Brewer , Christophe Chevallier , Wayne Kinney , Roy Lambertson , Darrell Rinerson , Lawrence Schloss
发明人： Julie Casperson Brewer , Christophe Chevallier , Wayne Kinney , Roy Lambertson , Darrell Rinerson , Lawrence Schloss
IPC分类号： G11C11/36
CPC分类号： G11C7/02 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/71 , G11C2213/76 , H01L27/2418 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/147
摘要： A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold device and a memory element that stores data as a plurality of conductivity profiles. The threshold device is operative to impart a characteristic I-V curve that defines current flow through the memory element as a function of applied voltage across the terminals during data operations. The threshold device substantially reduces or eliminates current flow through half-selected or un-selected memory plugs and allows a sufficient magnitude of current to flow through memory plugs that are selected for read and write operations. The threshold device reduces or eliminates data disturb in half-selected memory plugs and increases S/N ratio during read operations.

4. 发明授权

US08045364B2 Non-volatile memory device ion barrier 失效
公开(公告)号：US08045364B2
公开(公告)日：2011-10-25
申请号：US12653838
申请日：2009-12-18
申请人： Lawrence Schloss , Rene Meyer , Wayne Kinney , Roy Lambertson , Julie Casperson Brewer
发明人： Lawrence Schloss , Rene Meyer , Wayne Kinney , Roy Lambertson , Julie Casperson Brewer
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , H01L27/2409 , H01L27/2418 , H01L27/2472 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.

5. 发明授权

US08031510B2 Ion barrier cap 失效
公开(公告)号：US08031510B2
公开(公告)日：2011-10-04
申请号：US12803810
申请日：2010-07-06
申请人： Lawrence Schloss , Rene Meyer , Wayne Kinney , Roy Lambertson , Julie Casperson Brewer
发明人： Lawrence Schloss , Rene Meyer , Wayne Kinney , Roy Lambertson , Julie Casperson Brewer
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , H01L27/2409 , H01L27/2418 , H01L27/2472 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.

6. 发明申请

US20110149634A1 Non-volatile memory device ion barrier 失效
标题翻译：非易失性存储器件离子屏障
公开(公告)号：US20110149634A1
公开(公告)日：2011-06-23
申请号：US12653838
申请日：2009-12-18
申请人： Lawrence Schloss , Rene Meyer , Wayne Kinney , Roy Lambertson , Julie Casperson Brewer
发明人： Lawrence Schloss , Rene Meyer , Wayne Kinney , Roy Lambertson , Julie Casperson Brewer
IPC分类号： G11C11/00 , H01L45/00 , H01L29/12
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , H01L27/2409 , H01L27/2418 , H01L27/2472 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.
摘要翻译：由与电绝缘层接触的介电材料制成的离子阻挡层可操作以防止在对非易失性存储单元的数据操作期间传输到电绝缘层中的移动离子通过离子阻挡层并进入相邻层。与电绝缘层接触的导电氧化物层是可移动离子的源。编程数据操作用于将一部分移动离子传输到电绝缘层中，并且擦除数据操作可操作以将移动离子传输回到导电氧化物层中。当该部分位于电绝缘层中时，存储单元将数据存储为编程电导率分布，并且当大部分移动离子位于导电氧化物层中时，存储单元将数据存储为擦除的电导率分布。

7. 发明授权

US08493771B2 Non-volatile memory device ion barrier 失效
标题翻译：非易失性存储器件离子屏障
公开(公告)号：US08493771B2
公开(公告)日：2013-07-23
申请号：US13570871
申请日：2012-08-09
申请人： Lawrence Schloss , Julie Casperson Brewer , Wayne Kinney , Roy Lambertson , Rene Meyer
发明人： Lawrence Schloss , Julie Casperson Brewer , Wayne Kinney , Roy Lambertson , Rene Meyer
IPC分类号： G11C11/21
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , H01L27/2409 , H01L27/2418 , H01L27/2472 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.
摘要翻译：由与电绝缘层接触的介电材料制成的离子阻挡层可操作以防止在对非易失性存储单元的数据操作期间传输到电绝缘层中的移动离子通过离子阻挡层并进入相邻层。与电绝缘层接触的导电氧化物层是可移动离子的源。编程数据操作用于将一部分移动离子传输到电绝缘层中，并且擦除数据操作可操作以将移动离子传输回到导电氧化物层中。当该部分位于电绝缘层中时，存储单元将数据存储为编程电导率分布，并且当大部分移动离子位于导电氧化物层中时，存储单元将数据存储为擦除的电导率分布。

8. 发明授权

US08274817B2 Non volatile memory device ion barrier 有权
标题翻译：非易失性存储器件离子屏障
公开(公告)号：US08274817B2
公开(公告)日：2012-09-25
申请号：US13281335
申请日：2011-10-25
申请人： Lawrence Schloss , Julie Casperson Brewer , Wayne Kinney , Roy Lambertson , Rene Meyer
发明人： Lawrence Schloss , Julie Casperson Brewer , Wayne Kinney , Roy Lambertson , Rene Meyer
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , H01L27/2409 , H01L27/2418 , H01L27/2472 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.
摘要翻译：由与电绝缘层接触的介电材料制成的离子阻挡层可操作以防止在对非易失性存储单元的数据操作期间传输到电绝缘层中的移动离子通过离子阻挡层并进入相邻层。与电绝缘层接触的导电氧化物层是可移动离子的源。编程数据操作用于将一部分移动离子传输到电绝缘层中，并且擦除数据操作可操作以将移动离子传输回到导电氧化物层中。当该部分位于电绝缘层中时，存储单元将数据存储为编程电导率分布，并且当大部分移动离子位于导电氧化物层中时，存储单元将数据存储为擦除的电导率分布。

9. 发明申请

US20120300535A1 NON-VOLATILE MEMORY DEVICE ION BARRIER 失效
标题翻译：非易失性存储器件隔离器
公开(公告)号：US20120300535A1
公开(公告)日：2012-11-29
申请号：US13570871
申请日：2012-08-09
申请人： Lawrence Schloss , Rene Meyer , Wayne Kinney , Roy Lambertson , Julie Casperson Brewer
发明人： Lawrence Schloss , Rene Meyer , Wayne Kinney , Roy Lambertson , Julie Casperson Brewer
IPC分类号： H01L45/00 , G11C11/21
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , H01L27/2409 , H01L27/2418 , H01L27/2472 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.
摘要翻译：由与电绝缘层接触的介电材料制成的离子阻挡层可操作以防止在对非易失性存储单元的数据操作期间传输到电绝缘层中的移动离子通过离子阻挡层并进入相邻层。与电绝缘层接触的导电氧化物层是可移动离子的源。编程数据操作用于将一部分移动离子传输到电绝缘层中，并且擦除数据操作可操作以将移动离子传输回到导电氧化物层中。当该部分位于电绝缘层中时，存储单元将数据存储为编程电导率分布，并且当大部分移动离子位于导电氧化物层中时，存储单元将数据存储为擦除的电导率分布。

10. 发明授权

US08565006B2 Conductive metal oxide structures in non volatile re writable memory devices 有权
标题翻译：非易失性可重写存储器件中的导电金属氧化物结构
公开(公告)号：US08565006B2
公开(公告)日：2013-10-22
申请号：US13719106
申请日：2012-12-18
申请人： Lawrence Schloss , Julie Casperson Brewer , Wayne Kinney , Rene Meyer
发明人： Lawrence Schloss , Julie Casperson Brewer , Wayne Kinney , Rene Meyer
IPC分类号： G11C13/00
CPC分类号： H01L45/085 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2013/0073 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/74 , G11C2213/76
摘要： A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).
摘要翻译：公开了包括与导电金属氧化物（CMO）接触的电解绝缘体的存储元件的存储单元。 CMO包括晶体结构并且可以包含烧绿石氧化物，导电二元氧化物，多个B位钙钛矿和Ruddlesden-Popper结构。 CMO包括可以响应于施加在电解绝缘体和CMO上施加的写入电压产生的适当幅度和方向的电场，可以将其输送到电解绝缘体/从电解绝缘体传输的移动离子。存储器单元可以包括与存储元件电串联的非欧姆器件（NOD）。存储器单元可以位于单层存储器中的两端交叉点存储器阵列中的导电阵列线的交叉点或多个垂直堆叠的存储器层之间，该衬底层在衬底上制造，该衬底包括用于数据的有源电路对数组层进行操作。

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