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1. 发明授权

US07130318B2 Electrooptic Q-switch element made of crystal 有权
标题翻译：电光Q开关元件由晶体制成
公开(公告)号：US07130318B2
公开(公告)日：2006-10-31
申请号：US10441404
申请日：2003-05-20
申请人： Jiyang Wang , Xin Yin , Shaojun Zhang , Xiaobo Hu , Huaijin Zhang , Minhua Jiang
发明人： Jiyang Wang , Xin Yin , Shaojun Zhang , Xiaobo Hu , Huaijin Zhang , Minhua Jiang
IPC分类号： H01S3/11 , H01S3/115
CPC分类号： G02F1/3523 , G02F1/3551 , H01S3/115 , H01S3/166
摘要： This invention is a kind of electrooptic Q-switch element made of a single crystal and belongs to the application of crystal in electrooptic technology field. The invention consists of electrooptic Q-switch which is made of La3Ga5SiO14 or Nd:La3Ga5SiO14 or the other related crystal materials such as La3Ga5-xAlxSiO14, Sr3Ga2Ge4SiO14, Na2CaGe6O14, Ca3Ga2Ge4O14, La3Ga5.5Nb0.5O14 and La3Ga5.5Ta0.5O14 with the common shape or a specific shape containing Brewster angle as shown in figure. This kind of electrooptic Q-switch can be used in YAG laser and other laser. It overcomes the shortages of the commercial Q-switches, such as the high, un-adjustable, low stable half-wave voltage and great half-wave voltage variation with temperature. The advantage of this kind of electrooptic Q-switch is its low, adjustable, high stable half-wave voltage.
摘要翻译：本发明是一种由单晶制成的电光Q开关元件，属于电光技术领域晶体的应用。本发明由电光Q开关组成，其由La 3 Ga 5 SiO 14或Nd：La 3 N 3 / > Ga 5 SiO 2或其它相关的晶体材料，例如La 3 Ga 5-x Al 2 O 3 > SiO 2 SiO 14，Sr 3 Ga 2 SiO 4 SiO 14， Na 2，Na 2 CaGe 6 O 14，Ca 3 Ga 2 Ge 4 14 5 5 和具有共同形状或特定形状的La 3 N 5 S 5 H 5 O 5 O 14 14包含布鲁斯特角如图所示。这种电光Q开关可用于YAG激光等激光器。克服了商用Q开关的缺点，如高，不可调，低稳定的半波电压和大的半波电压随温度变化。这种电光Q开关的优点是其低，可调，高稳定的半波电压。

2. 发明授权

US06625186B1 Laser frequency doubling device of ReCa4O(BO3)3 crystal with specific cut angles 有权
标题翻译： ReCa4O（BO3）3晶体的激光倍频装置具有特定的切割角度
公开(公告)号：US06625186B1
公开(公告)日：2003-09-23
申请号：US09590271
申请日：2000-06-09
申请人： Jiyang Wang , Chuangtian Chen , Zongshu Shao , Jie Jiang , Xiaobo Hu , Jiao Lin , Yaogang Liu , Ning Ye , Baichang Wu , Minhua Jiang
发明人： Jiyang Wang , Chuangtian Chen , Zongshu Shao , Jie Jiang , Xiaobo Hu , Jiao Lin , Yaogang Liu , Ning Ye , Baichang Wu , Minhua Jiang
IPC分类号： H01S316
CPC分类号： G02F1/3551 , H01S3/109
摘要： The present invention belongs to the field of optoectronics. The main content of the present invention is to determine the optimum cut-orientations of ReCOB crystal frequency-doubling devices. For an example, the cut-angles of the YCOB crystal for 1064 nm are &thgr;1=(65.9±5.0)°, &phgr;1=(36.9±5.0)° or &thgr;2=(66.3±5)°, &phgr;2=(143.5±5)°. The present invention has solved the problem of low frequency-doubling conversion efficiency in the prior technique. The frequency-doubling technique of the present invention has advantages of high frequency-doubling conversion efficiency and low energy dissipation, and is useful for the application of the ReCOB crystal.
摘要翻译：本发明属于光电子学领域。本发明的主要内容是确定ReCOB晶体倍频装置的最佳切割取向。例如，1064nm的YCOB晶体的切角为θ1=（65.9±5.0）°，phi1 =（36.9±5.0）°或θ2=（66.3±5）°，phi2 =（143.5±5） °。本发明解决了现有技术中低倍频转换效率的问题。本发明的倍频技术具有转换效率高，能量耗散低的优点，对于ReCOB晶体的应用是有用的。

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