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1. 发明申请

US20090101522A1 High Temperature Electrochemical Characterization of Molten Metal Corrosion 有权
标题翻译：熔融金属腐蚀的高温电化学表征
公开(公告)号：US20090101522A1
公开(公告)日：2009-04-23
申请号：US12128954
申请日：2008-05-29
申请人： Jing Xu , Xingbo Liu , Yinglu Jiang , Frank Goodwin
发明人： Jing Xu , Xingbo Liu , Yinglu Jiang , Frank Goodwin
IPC分类号： G01N27/26 , G01N27/28
CPC分类号： G01N27/411
摘要： A system and method for the high temperature in-situ determination of corrosion characteristics of a molten metal on an alloy under study is provided which takes place within an insulated furnace. A graphite crucible provided in the furnace contains an electrolyte formed from a molten salt of a metal halide. A reference electrode formed from the same metal as the electrolyte is immersed in the electrolyte solution in the graphite crucible. A beta-alumina crucible containing a molten metal is also provided within the furnace and preferably within the graphite crucible. A measuring electrode formed from the alloy under study is immersed in the molten metal. Standard electrochemical techniques are used to measure and analyze the electrochemical effects of corrosion of the molten metal on the alloy.
摘要翻译：提供了一种在绝缘炉内进行高温原位测定熔融金属在正在研究的合金上的腐蚀特性的系统和方法。设置在炉中的石墨坩埚含有由金属卤化物的熔融盐形成的电解质。由与电解质相同的金属形成的参比电极浸入石墨坩埚中的电解液中。在炉内还优选在石墨坩埚内设置含有熔融金属的β-氧化铝坩埚。将由研究的合金形成的测量电极浸入熔融金属中。使用标准电化学技术来测量和分析熔融金属对合金的腐蚀的电化学效应。

2. 发明授权

US08173007B2 High temperature electrochemical characterization of molten metal corrosion 有权
标题翻译：熔融金属腐蚀的高温电化学表征
公开(公告)号：US08173007B2
公开(公告)日：2012-05-08
申请号：US12128954
申请日：2008-05-29
申请人： Jing Xu , Xingbo Liu , Yinglu Jiang , Frank Goodwin
发明人： Jing Xu , Xingbo Liu , Yinglu Jiang , Frank Goodwin
IPC分类号： G01N17/02 , G01N27/06
CPC分类号： G01N27/411
摘要： A system and method for the high temperature in-situ determination of corrosion characteristics of a molten metal on an alloy under study is provided which takes place within an insulated furnace. A graphite crucible provided in the furnace contains an electrolyte formed from a molten salt of a metal halide. A reference electrode formed from the same metal as the electrolyte is immersed in the electrolyte solution in the graphite crucible. A beta-alumina crucible containing a molten metal is also provided within the furnace and preferably within the graphite crucible. A measuring electrode formed from the alloy under study is immersed in the molten metal. Standard electrochemical techniques are used to measure and analyze the electrochemical effects of corrosion of the molten metal on the alloy.
摘要翻译：提供了一种在绝缘炉内进行高温原位测定熔融金属在正在研究的合金上的腐蚀特性的系统和方法。设置在炉中的石墨坩埚含有由金属卤化物的熔融盐形成的电解质。由与电解质相同的金属形成的参比电极浸入石墨坩埚中的电解液中。在炉内还优选在石墨坩埚内提供含有熔融金属的β-氧化铝坩埚。将由研究的合金形成的测量电极浸入熔融金属中。使用标准电化学技术来测量和分析熔融金属对合金的腐蚀的电化学效应。

3. 发明授权

US07096127B2 Measuring flare in semiconductor lithography 有权
标题翻译：测量半导体光刻中的光斑
公开(公告)号：US07096127B2
公开(公告)日：2006-08-22
申请号：US10964102
申请日：2004-10-13
申请人： David Ziger , Ralf Ziebold , Frank Goodwin
发明人： David Ziger , Ralf Ziebold , Frank Goodwin
IPC分类号： G06F19/00
CPC分类号： G03F7/70941
摘要： Systems, methods, and lithography masks for measuring flare in semiconductor lithography. A layer of photosensitive material is exposed to a first test pattern and a second test pattern, the second test pattern comprising an opaque or attenuated region. The second test pattern is placed proximate features formed in a photosensitive material in a first exposure by the first test pattern, in a second exposure by the second test pattern on the same mask or a different mask. Alternatively, the second test pattern may be disposed proximate a portion of the first test pattern on a single mask using a single exposure. If flare exists in the optical system, the second test pattern causes line shortening in the features formed in the photosensitive material of the first test pattern. The line shortening can be measured to determine the effect of flare in the lithography system.
摘要翻译：用于测量半导体光刻中的光斑的系统，方法和光刻掩模。感光材料层暴露于第一测试图案和第二测试图案，第二测试图案包括不透明或衰减区域。第二测试图案通过第一测试图案在第一次曝光中放置在感光材料中形成的接近特征处，在第二测试图案的第二次曝光中放置在相同的掩模或不同的掩模上。或者，第二测试图案可以使用单次曝光设置在单个掩模上的第一测试图案的一部分附近。如果在光学系统中存在耀斑，则第二测试图案使得在第一测试图案的感光材料中形成的特征中的线缩短。可以测量线缩短以确定光刻系统中光斑的影响。

4. 发明申请

US20060080046A1 Measuring flare in semiconductor lithography 有权
公开(公告)号：US20060080046A1
公开(公告)日：2006-04-13
申请号：US10964102
申请日：2004-10-13
申请人： David Ziger , Ralf Ziebold , Frank Goodwin
发明人： David Ziger , Ralf Ziebold , Frank Goodwin
IPC分类号： G06F19/00
CPC分类号： G03F7/70941
摘要： Systems, methods, and lithography masks for measuring flare in semiconductor lithography. A layer of photosensitive material is exposed to a first test pattern and a second test pattern, the second test pattern comprising an opaque or attenuated region. The second test pattern is placed proximate features formed in a photosensitive material in a first exposure by the first test pattern, in a second exposure by the second test pattern on the same mask or a different mask. Alternatively, the second test pattern may be disposed proximate a portion of the first test pattern on a single mask using a single exposure. If flare exists in the optical system, the second test pattern causes line shortening in the features formed in the photosensitive material of the first test pattern. The line shortening can be measured to determine the effect of flare in the lithography system.

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