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1. 发明申请

US20060011988A1 Integrated circuit with multiple spacer insulating region widths 审中-公开
标题翻译：具有多个间隔绝缘区域宽度的集成电路
公开(公告)号：US20060011988A1
公开(公告)日：2006-01-19
申请号：US11231087
申请日：2005-09-20
申请人： Jian Chen , Vance Adams , Choh-Fei Yeap
发明人： Jian Chen , Vance Adams , Choh-Fei Yeap
IPC分类号： H01L29/94
CPC分类号： H01L21/823864 , H01L21/823814 , H01L21/84 , H01L27/1203
摘要： An integrated circuit with both P-channel transistors (823) and N-channel transistors (821) with different spacer insulating region widths. In one example, the outer sidewall spacer (321) of the N-channel transistors is removed while the P-channel regions (115) are masked such that the spacer insulating region widths of the N-channel transistors is less than the spacer insulating region widths of the P-channel transistors. Also, the drain/source silicide regions (805) of the N-channel transistors are located closer to the gates (117) of those transistors than the P-channel source/drain silicide regions (809) are located to the gates (119) of those transistors. Providing the P-channel transistors with greater spacer insulating widths and greater distances between the source/drain silicide regions and gates may increase the relative compressive stress of the channel region of the P-channel transistors relative the stress of the channel region of the N-channel transistors, thereby increasing the performance of the P-channel transistors.
摘要翻译：具有不同间隔绝缘区宽度的具有P沟道晶体管（823）和N沟道晶体管（821）的集成电路。在一个示例中，除去N沟道晶体管的外侧壁间隔物（321），同时P沟道区域（115）被掩蔽，使得N沟道晶体管的间隔绝缘区域宽度小于间隔绝缘区域 P沟道晶体管的宽度。此外，N沟道晶体管的漏极/源极硅化物区域（805）位于比P沟道源极/漏极硅化物区域（809）位于栅极（119）处更靠近那些晶体管的栅极（117）的晶体管。在源/漏硅化物区域和栅极之间提供具有较大间隔绝缘宽度和较大距离的P沟道晶体管可以增加P沟道晶体管的沟道区相对于N沟道晶体管的沟道区的应力的相对压缩应力，通道晶体管，从而增加P沟道晶体管的性能。

2. 发明申请

US20060043500A1 Transistor structure with stress modification and capacitive reduction feature in a channel direction and method thereof 审中-公开
标题翻译：具有应力改变和通道方向的电容降低特性的晶体管结构及其方法
公开(公告)号：US20060043500A1
公开(公告)日：2006-03-02
申请号：US10925057
申请日：2004-08-24
申请人： Jian Chen , Michael Mendicino , Vance Adams , Choh-Fei Yeap , Venkat Kolagunta
发明人： Jian Chen , Michael Mendicino , Vance Adams , Choh-Fei Yeap , Venkat Kolagunta
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/78 , H01L29/7843
摘要： A transistor comprises an active region having a periphery with opposing sides and a source and a drain positioned within the active region. A gate overlies a channel area of the active region, the channel region separating the source and drain. The transistor further includes at least one stress modifying feature extending from an edge of the active region on at least one of a source side or a drain side and toward the channel area but not entering the channel area. The at least one stress modifying feature includes a dielectric.
摘要翻译：晶体管包括具有相对侧边缘的有源区和位于有源区内的源极和漏极。 A栅极覆盖有源区的沟道区，沟道区分离源极和漏极。晶体管还包括至少一个应力调整特征，其从源极侧或漏极侧中的至少一个上方的有源区域的边缘延伸并且朝向沟道区域而不进入沟道区域。所述至少一个应力改变特征包括电介质。

3. 发明申请

US20060043422A1 Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof 有权
标题翻译：具有应力改变和宽度方向的电容减小特性的晶体管结构及其方法
公开(公告)号：US20060043422A1
公开(公告)日：2006-03-02
申请号：US10925084
申请日：2004-08-24
申请人： Jian Chen , Michael Mendicino , Vance Adams , Choh-Fei Yeap , Venkat Kolagunta
发明人： Jian Chen , Michael Mendicino , Vance Adams , Choh-Fei Yeap , Venkat Kolagunta
IPC分类号： H01L29/76 , H01L31/113
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823814 , H01L21/823828
摘要： A transistor comprises a source and drain positioned within an active region. A gate overlies a channel area of the active region, wherein the channel region separates the source and drain. The transistor further comprises at least one stress modifier and capacitive reduction feature extending from the source to the drain and underlying the gate for reducing capacitance associated with the gate, source and drain. The at least one stress modifier and capacitive reduction feature comprises dielectric and includes a shape defined at least partially by the active region.
摘要翻译：晶体管包括位于有源区域内的源极和漏极。栅极覆盖有源区的沟道区，其中沟道区分离源极和漏极。晶体管还包括至少一个应力调节器和电容降低特征，其从源极延伸到漏极并且在栅极下方，用于减小与栅极，源极和漏极相关联的电容。所述至少一个应力调节剂和电容还原特征包括电介质并且包括至少部分地由有源区限定的形状。

4. 发明申请

US20050190421A1 Integrated circuit with multiple spacer insulating region widths 有权
标题翻译：具有多个间隔绝缘区域宽度的集成电路
公开(公告)号：US20050190421A1
公开(公告)日：2005-09-01
申请号：US10790420
申请日：2004-03-01
申请人： Jian Chen , Vance Adams , Choh-Fei Yeap
发明人： Jian Chen , Vance Adams , Choh-Fei Yeap
IPC分类号： G02B26/08 , H01L21/84 , H01L27/12
CPC分类号： H01L21/823864 , H01L21/823814 , H01L21/84 , H01L27/1203
摘要： An integrated circuit with both P-channel transistors (823) and N-channel transistors (821) with different spacer insulating region widths. In one example, the outer sidewall spacer (321) of the N-channel transistors is removed while the P-channel regions (115) are masked such that the spacer insulating region widths of the N-channel transistors is less than the spacer insulating region widths of the P-channel transistors. Also, the drain/source silicide regions (805) of the N-channel transistors are located closer to the gates (117) of those transistors than the P-channel source/drain suicide regions (809) are located to the gates (119) of those transistors. Providing the P-channel transistors with greater spacer insulating widths and greater distances between the source/drain silicide regions and gates may increase the relative compressive stress of the channel region of the P-channel transistors relative the stress of the channel region of the N-channel transistors, thereby increasing the performance of the P-channel transistors.
摘要翻译：具有不同间隔绝缘区宽度的具有P沟道晶体管（823）和N沟道晶体管（821）的集成电路。在一个示例中，除去N沟道晶体管的外侧壁间隔物（321），同时P沟道区域（115）被掩蔽，使得N沟道晶体管的间隔绝缘区域宽度小于间隔绝缘区域 P沟道晶体管的宽度。此外，N沟道晶体管的漏极/源极硅化物区域（805）位于比P沟道源极/漏极硅化物区域（809）位于栅极（119）处更靠近那些晶体管的栅极（117）的晶体管。在源/漏硅化物区域和栅极之间提供具有较大间隔绝缘宽度和较大距离的P沟道晶体管可以增加P沟道晶体管的沟道区相对于N沟道晶体管的沟道区的应力的相对压缩应力，通道晶体管，从而增加P沟道晶体管的性能。

5. 发明授权

US07064396B2 Integrated circuit with multiple spacer insulating region widths 有权
标题翻译：具有多个间隔绝缘区域宽度的集成电路
公开(公告)号：US07064396B2
公开(公告)日：2006-06-20
申请号：US10790420
申请日：2004-03-01
申请人： Jian Chen , Vance H. Adams , Choh-Fei Yeap
发明人： Jian Chen , Vance H. Adams , Choh-Fei Yeap
IPC分类号： H01L29/94 , H01L31/062
CPC分类号： H01L21/823864 , H01L21/823814 , H01L21/84 , H01L27/1203
摘要： An integrated circuit with both P-channel transistors (823) and N-channel transistors (821) with different spacer insulating region widths. In one example, the outer sidewall spacer (321) of the N-channel transistors is removed while the P-channel regions (115) are masked such that the spacer insulating region widths of the N-channel transistors is less than the spacer insulating region widths of the P-channel transistors. Also, the drain/source silicide regions (805) of the N-channel transistors are located closer to the gates (117) of those transistors than the P-channel source/drain suicide regions (809) are located to the gates (119) of those transistors. Providing the P-channel transistors with greater spacer insulating widths and greater distances between the source/drain silicide regions and gates may increase the relative compressive stress of the channel region of the P-channel transistors relative the stress of the channel region of the N-channel transistors, thereby increasing the performance of the P-channel transistors.
摘要翻译：具有不同间隔绝缘区宽度的具有P沟道晶体管（823）和N沟道晶体管（821）的集成电路。在一个示例中，除去N沟道晶体管的外侧壁间隔物（321），同时P沟道区域（115）被掩蔽，使得N沟道晶体管的间隔绝缘区域宽度小于间隔绝缘区域 P沟道晶体管的宽度。此外，N沟道晶体管的漏极/源极硅化物区域（805）位于比P沟道源极/漏极硅化物区域（809）位于栅极（119）处更靠近那些晶体管的栅极（117）的晶体管。在源/漏硅化物区域和栅极之间提供具有较大间隔绝缘宽度和较大距离的P沟道晶体管可以增加P沟道晶体管的沟道区相对于N沟道晶体管的沟道区的应力的相对压缩应力，通道晶体管，从而增加P沟道晶体管的性能。

6. 发明授权

US06503814B2 Method for forming trench isolation 失效
公开(公告)号：US06503814B2
公开(公告)日：2003-01-07
申请号：US09765740
申请日：2001-01-19
申请人： Choh-Fei Yeap , Jian Chen , Franklin D. Nkansah
发明人： Choh-Fei Yeap , Jian Chen , Franklin D. Nkansah
IPC分类号： H01L2176
CPC分类号： H01L21/76237
摘要： The semiconductor device has a trench isolation between a P-well and N-well. This trench isolation region is formed of oxide which during the course of the formation of the P and N well is doped with P-type and N-type dopants. Thus the trench has a P-type doped region and an N-type doped region which are typically phosphorous and boron. After the P and N well are formed, a rapid thermal anneal is applied to the device structure. This has the effect of causing the phosphorous doped and boron doped portions of the trench oxide to be etched at substantially the same rate. After this RTA step, gate oxide is formed over the P and N well. The following formation of polysilicon gates results in a relatively flat gate over transistor structure. This avoids corner leakage which is a problem with trench isolation.

7. 发明授权

US07161199B2 Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof 有权
标题翻译：具有应力改变和宽度方向的电容减小特性的晶体管结构及其方法
公开(公告)号：US07161199B2
公开(公告)日：2007-01-09
申请号：US10925084
申请日：2004-08-24
申请人： Jian Chen , Michael A. Mendicino , Vance H. Adams , Choh-Fei Yeap , Venkat R. Kolagunta
发明人： Jian Chen , Michael A. Mendicino , Vance H. Adams , Choh-Fei Yeap , Venkat R. Kolagunta
IPC分类号： H01L29/76
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823814 , H01L21/823828
摘要： A transistor comprises a source and drain positioned within an active region. A gate overlies a channel area of the active region, wherein the channel region separates the source and drain. The transistor further comprises at least one stress modifier and capacitive reduction feature extending from the source to the drain and underlying the gate for reducing capacitance associated with the gate, source and drain. The at least one stress modifier and capacitive reduction feature comprises dielectric and includes a shape defined at least partially by the active region.
摘要翻译：晶体管包括位于有源区域内的源极和漏极。栅极覆盖有源区的沟道区，其中沟道区分离源极和漏极。晶体管还包括至少一个应力调节器和电容降低特征，其从源极延伸到漏极并且在栅极下方，用于减小与栅极，源极和漏极相关联的电容。所述至少一个应力调节剂和电容还原特征包括电介质并且包括至少部分地由有源区限定的形状。

8. 发明授权

US06864135B2 Semiconductor fabrication process using transistor spacers of differing widths 有权
标题翻译：使用不同宽度的晶体管间隔物的半导体制造工艺
公开(公告)号：US06864135B2
公开(公告)日：2005-03-08
申请号：US10285374
申请日：2002-10-31
申请人： Paul A. Grudowski , Jian Chen , Choh-Fei Yeap
发明人： Paul A. Grudowski , Jian Chen , Choh-Fei Yeap
IPC分类号： H01L21/336 , H01L21/8238 , H01L29/49
CPC分类号： H01L29/4983 , H01L21/823864 , H01L29/6656 , H01L29/6659
摘要： A semiconductor fabrication process is disclosed wherein a first gate (108, 114) is formed over a first portion of a semiconductor substrate (102) and a second gate (114, 108) is formed over a second portion of the substrate (102). A spacer film (118) is deposited over substrate (102) and first and second gates (108, 114). First spacers (126) are then formed on sidewalls of the second gate (114) and second spacers (136) are formed on sidewalls of first gate (108). The first and second spacers (126, 136) have different widths. The process may further include forming first source/drain regions (128) in the substrate laterally disposed on either side of the first spacers (126) and second source/drain regions (138) are formed on either side of second spacers (136). The different spacer widths may be achieved using masked first and second spacer etch processes (125, 135) having different degrees of isotropy. The spacer etch mask and the source/drain implant mask may be common such that p-channel transistors have a different spacer width than n-channel transistors.
摘要翻译：公开了半导体制造工艺，其中第一栅极（108,114）形成在半导体衬底（102）的第一部分上，并且在衬底（102）的第二部分上方形成第二栅极（114,108）。间隔膜（118）沉积在衬底（102）和第一和第二栅极（108,114）上。然后在第二栅极（114）的侧壁上形成第一间隔物（126），并且第二间隔物（136）形成在第一栅极（108）的侧壁上。第一和第二间隔物（126,136）具有不同的宽度。该工艺可以进一步包括在横向设置在第一间隔物（126）的任一侧上的衬底中形成第一源极/漏极区（128），并且在第二间隔物（136）的任一侧上形成第二源/漏区（138）。可以使用具有不同程度的各向同性的掩蔽的第一和第二间隔物蚀刻工艺（125,135）来实现不同的间隔物宽度。间隔物蚀刻掩模和源极/漏极注入掩模可以是共同的，使得p沟道晶体管具有与n沟道晶体管不同的间隔物宽度。

9. 发明申请

US20060084220A1 Differentially nitrided gate dielectrics in CMOS fabrication process 审中-公开
标题翻译： CMOS制造工艺中的差分氮化栅极电介质
公开(公告)号：US20060084220A1
公开(公告)日：2006-04-20
申请号：US10965963
申请日：2004-10-15
申请人： Sangwoo Lim , Paul Grudowski , Dejan Jovanovic , Choh-Fei Yeap
发明人： Sangwoo Lim , Paul Grudowski , Dejan Jovanovic , Choh-Fei Yeap
IPC分类号： H01L21/8234 , H01L21/8238 , H01L21/336
CPC分类号： H01L21/823857 , H01L21/823807
摘要： A semiconductor fabrication process includes forming a first plasma nitrided oxide (PNO) gate dielectric overlying a first region of a semiconductor substrate. A second PNO gate dielectric is formed overlying a second region of the substrate. The nitrogen concentration of the second PNO differs from the nitrogen concentration of the first PNO. A PMOS transistor is formed overlying the first substrate region and an NMOS transistor overlying the second substrate region. Prior to forming the first PNO gate dielectric, a mobility enhancing channel region may be formed overlying the first substrate region. Forming the mobility enhancing channel region may include forming a compressively stressed silicon germanium film overlying the first substrate region.
摘要翻译：半导体制造工艺包括形成覆盖在半导体衬底的第一区域上的第一等离子体氮化氧化物（PNO）栅极电介质。在衬底的第二区域上形成第二PNO栅极电介质。第二PNO的氮浓度与第一PNO的氮浓度不同。形成在第一衬底区域上方的PMOS晶体管和覆盖第二衬底区域的NMOS晶体管。在形成第一PNO栅极电介质之前，可以形成覆盖在第一衬底区域上的迁移率增强沟道区。形成迁移率增强沟道区域可以包括形成覆盖在第一衬底区域上的压缩应力的硅锗膜。

10. 发明授权

US06979627B2 Isolation trench 有权
标题翻译：隔离槽
公开(公告)号：US06979627B2
公开(公告)日：2005-12-27
申请号：US10836150
申请日：2004-04-30
申请人： Choh-Fei Yeap , Yongjoo Jeon , Michael D. Turner , Toni D. Van Gompel
发明人： Choh-Fei Yeap , Yongjoo Jeon , Michael D. Turner , Toni D. Van Gompel
IPC分类号： H01L21/302 , H01L21/461 , H01L21/76 , H01L21/762 , H01L21/84 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/76283 , H01L21/84
摘要： A process for forming an isolation trench in a wafer. The process includes depositing (e.g. by a directional deposition process) a first dielectric material in the trench and then depositing a second dielectric material (e.g. by a directional deposition process) over the first dielectric material in the trench. A third material is deposited in the trench on the second layer. The second material and the third material are selectively etchable with respect to each other. In one example, the first material has a lower dielectric constant than the second material.
摘要翻译：一种用于在晶片中形成隔离沟槽的工艺。该方法包括在沟槽中沉积（例如通过定向沉积工艺）第一介电材料，然后在沟槽中的第一介电材料上沉积第二电介质材料（例如通过定向沉积工艺）。第三材料沉积在第二层上的沟槽中。第二材料和第三材料相对于彼此可选择性地蚀刻。在一个示例中，第一材料具有比第二材料低的介电常数。

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