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1. 发明申请

US20050156188A1 Nitride semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20050156188A1
公开(公告)日：2005-07-21
申请号：US10839284
申请日：2004-05-06
申请人： Jae Ro , Sang Cho , Seung Chae
发明人： Jae Ro , Sang Cho , Seung Chae
IPC分类号： H01L21/28 , H01L21/00 , H01L21/3205 , H01L23/52 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： Disclosed herein are a nitride semiconductor light emitting device and a method of manufacturing the same. The nitride semiconductor light emitting device comprises a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.
摘要翻译：本文公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括用于生长氮化镓基半导体材料的衬底，衬底上的n型氮化物半导体层，n型氮化物半导体层上的有源层，使得n型氮化物半导体发光器件的预定部分，露出氮化物半导体层，有源层上的p型氮化物半导体层，p型氮化物半导体层上的透明电极层与p型氮化物半导体层欧姆接触，p型在透明电极层上形成Ta / Au双层形式的正极焊盘和在n型氮化物的暴露部分上形成Ta / Au双层形式的n侧电极半导体层。

2. 发明申请

US20060202217A1 Nitride semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060202217A1
公开(公告)日：2006-09-14
申请号：US11431001
申请日：2006-05-10
申请人： Jae Ro , Sang Cho , Seung Chae
发明人： Jae Ro , Sang Cho , Seung Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： A nitride semiconductor light emitting device includes a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.
摘要翻译：氮化物半导体发光器件包括用于生长氮化镓基半导体材料的衬底，衬底上的n型氮化物半导体层，n型氮化物半导体层上的有源层，使得n型氮化物半导体材料的预定部分，露出氮化物半导体层，有源层上的p型氮化物半导体层，p型氮化物半导体层上的透明电极层与p型氮化物半导体层欧姆接触，p型在透明电极层上形成Ta / Au双层形式的正极焊盘和在n型氮化物的暴露部分上形成Ta / Au双层形式的n侧电极半导体层。

3. 发明申请

US20060220057A1 Group III-nitride light emitting device 失效
标题翻译： III族氮化物发光器件
公开(公告)号：US20060220057A1
公开(公告)日：2006-10-05
申请号：US11315150
申请日：2005-12-23
申请人： Hyun Shim , Suk Yoon , Jae Ro , Seung Chae
发明人： Hyun Shim , Suk Yoon , Jae Ro , Seung Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
摘要翻译：本发明提供了具有改进的外部量子效率和亮度的III族氮化物发光器件。发光器件包括依次形成的n型覆盖层，有源层和p型覆盖层。此外，在p型覆盖层上形成p电极，其中p电极包括CuInO 2层，透明导电氧化物层和顺序地形成在p型上的反射金属层包层反射金属层可以是Ag层或Al层。

4. 发明申请

US20070134834A1 Method of manufacturing vertical gallium nitride based light emitting diode 有权
标题翻译：制造垂直氮化镓基发光二极管的方法
公开(公告)号：US20070134834A1
公开(公告)日：2007-06-14
申请号：US11634106
申请日：2006-12-06
申请人： Jae Lee , Jung Lee , Hyun Cho , Dae Kim , Jae Ro
发明人： Jae Lee , Jung Lee , Hyun Cho , Dae Kim , Jae Ro
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L33/22
摘要： A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.
摘要翻译：制造垂直GaN基LED的方法包括在硅衬底上形成氮化物基缓冲层; 在氮化物基缓冲层上依次形成p型GaN层，有源层和n型GaN层; 在n型GaN层上形成n电极; 在n电极上形成电镀种子层; 在电镀种子层上形成结构支撑层; 通过湿蚀刻去除硅衬底，并通过过蚀刻在p型GaN层的表面上形成粗糙度; 在形成有粗糙度的p型GaN层上形成p电极。

5. 发明申请

US20060054909A1 Light emitting diode improved in luminous efficiency 审中-公开
标题翻译：发光二极管的发光效率提高
公开(公告)号：US20060054909A1
公开(公告)日：2006-03-16
申请号：US10993371
申请日：2004-11-22
申请人： Hyoun Shin , Bong Yi , Jae Ro , In Pyeon
发明人： Hyoun Shin , Bong Yi , Jae Ro , In Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： The present invention relates to an LED, in which an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p-electrode are formed in their order on a sapphire substrate. A high reflectivity material layer containing Cu and Si is deposited on a remaining partial region of the n-doped semiconductor layer. An n-electrode is formed on the high reflectivity material layer. The high reflectivity material layer formed between the n-electrode and the partial region of the underlying n-doped semiconductor layer can reflect light toward a substrate, thereby improving the luminous efficiency of the LED.
摘要翻译：本发明涉及一种LED，其中在蓝宝石衬底上依次形成n掺杂半导体层，有源层，p掺杂半导体层和p电极。包含Cu和Si的高反射率材料层沉积在n掺杂半导体层的剩余部分区域上。在高反射率材料层上形成n电极。形成在n电极和下面的n掺杂半导体层的部分区域之间的高反射率材料层可以将光朝向衬底反射，从而提高LED的发光效率。

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