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    • 8. 发明授权
    • Replacement metal gate structure for CMOS device
    • CMOS器件替代金属栅极结构
    • US09040404B2
    • 2015-05-26
    • US13676483
    • 2012-11-14
    • International Business Machines CorporationGLOBAL FOUNDRIES Inc
    • Takashi AndoKisik ChoiSrikanth B. Samavedam
    • H01L21/3205H01L27/092H01L21/8238
    • H01L27/092H01L21/823842H01L21/823857
    • A method of fabricating a replacement metal gate structure for a CMOS device. The method includes forming a dummy gate structure on an nFET portion and a pFET portion of the CMOS device; depositing an interlayer dielectric between the dummy gate structures; removing the dummy gate structures from the nFET portion and the pFET portion, resulting in a recess on the nFET portion and a recess on the pFET portion; depositing a first layer of titanium nitride into the recesses on the nFET portion and pFET portion; removing the first layer of titanium nitride from the nFET portion only; depositing a second layer of titanium nitride into the recesses on the nFET portion and pFET portion; depositing a gate metal onto the second layer of titanium nitride in the recesses on the nFET portion and pFET portion to fill the remainder of the recesses.
    • 一种制造用于CMOS器件的替代金属栅极结构的方法。 该方法包括在CMOS器件的nFET部分和pFET部分上形成伪栅极结构; 在所述虚拟栅极结构之间沉积层间电介质; 从nFET部分和pFET部分去除伪栅极结构,导致nFET部分上的凹槽和pFET部分上的凹部; 将第一层氮化钛沉积到nFET部分和pFET部分上的凹陷中; 仅从nFET部分去除第一层氮化钛; 将第二层氮化钛沉积到nFET部分和pFET部分上的凹槽中; 在nFET部分和pFET部分上的凹槽中的第二氮化钛层上沉积栅极金属,以填充其余凹部。
    • 9. 发明申请
    • REPLACEMENT METAL GATE STRUCTURE FOR CMOS DEVICE
    • 替代CMOS器件的金属门结构
    • US20140131808A1
    • 2014-05-15
    • US13676483
    • 2012-11-14
    • INTERNATIONAL BUSINESS MACHINES CORPORATIONGLOBAL FOUNDRIES INC
    • Takashi AndoKisik ChoiSrikanth B. Samavedam
    • H01L21/8238H01L27/092
    • H01L27/092H01L21/823842H01L21/823857
    • A method of fabricating a replacement metal gate structure for a CMOS device. The method includes forming a dummy gate structure on an nFET portion and a pFET portion of the CMOS device; depositing an interlayer dielectric between the dummy gate structures; removing the dummy gate structures from the nFET portion and the pFET portion, resulting in a recess on the nFET portion and a recess on the pFET portion; depositing a first layer of titanium nitride into the recesses on the nFET portion and pFET portion; removing the first layer of titanium nitride from the nFET portion only; depositing a second layer of titanium nitride into the recesses on the nFET portion and pFET portion; depositing a gate metal onto the second layer of titanium nitride in the recesses on the nFET portion and pFET portion to fill the remainder of the recesses.
    • 一种制造用于CMOS器件的替代金属栅极结构的方法。 该方法包括在CMOS器件的nFET部分和pFET部分上形成伪栅极结构; 在所述虚拟栅极结构之间沉积层间电介质; 从nFET部分和pFET部分去除伪栅极结构,导致nFET部分上的凹槽和pFET部分上的凹部; 将第一层氮化钛沉积到nFET部分和pFET部分上的凹陷中; 仅从nFET部分去除第一层氮化钛; 将第二层氮化钛沉积到nFET部分和pFET部分上的凹槽中; 在nFET部分和pFET部分上的凹槽中的第二氮化钛层上沉积栅极金属,以填充其余凹部。