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1. 发明授权

US5885867A Methods of forming hemispherical grained silicon layers including anti-nucleation gases 失效
标题翻译：形成包括抗成核气体的半球形硅层的方法
公开(公告)号：US5885867A
公开(公告)日：1999-03-23
申请号：US984310
申请日：1997-12-03
申请人： Hyun-bo Shin , Jong-young Kim
发明人： Hyun-bo Shin , Jong-young Kim
IPC分类号： H01L21/02 , H01L21/8242
CPC分类号： H01L27/1085 , H01L28/84
摘要： A method of forming a hemispherical grained silicon layer includes the step of forming a first amorphous silicon layer on an integrated circuit substrate by exposing the integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas. A hemispherical grained silicon layer is formed on the amorphous silicon layer opposite the substrate. The anti-nucleation gas can be nitrogen oxide or oxygen.
摘要翻译：形成半球形硅层的方法包括通过将集成电路衬底暴露于包括硅源气体和抗成核气体的第一气氛来在集成电路衬底上形成第一非晶硅层的步骤。在与衬底相对的非晶硅层上形成半球状的硅层。抗成核气体可以是氮氧化物或氧气。

2. 发明授权

US06385020B1 Methods of forming HSG capacitors from nonuniformly doped amorphous silicon layers and HSG capacitors formed thereby 失效
标题翻译：由不均匀掺杂的非晶硅层和由此形成的HSG电容器形成HSG电容器的方法
公开(公告)号：US06385020B1
公开(公告)日：2002-05-07
申请号：US09487740
申请日：2000-01-19
申请人： Hyun-bo Shin , Myeong-cheol Kim , Jin-won Kim , Ki-hyun Hwang , Jae-young Park , Bon-young Koo
发明人： Hyun-bo Shin , Myeong-cheol Kim , Jin-won Kim , Ki-hyun Hwang , Jae-young Park , Bon-young Koo
IPC分类号： H02H700
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/84
摘要： A hemispherical grain (HSG) capacitor having HSGs on at least a part of the surface of capacitor lower electrodes, and a method of forming the same. In the capacitor, lower electrodes are formed of at least two amorphous silicon layers including an amorphous silicon layer doped with a high concentration of impurities and an amorphous silicon layer doped with a low concentration of impurities, and HSGs are formed, wherein the size of the hemispherical grains can be adjusted such that the size of HSGs formed on the inner surface of a U-shaped lower electrode or on the top of a stacked lower electrode is larger than that of HSGs formed on the outer surface of the U-shaped lower electrode or on the sidews of the stacked lower electrode. Thus, bridging between neighboring lower electrodes can be avoided by appropriately adjusting the size of HSGs, resulting in uniform capacitance wafer-to-wafer and within a wafer. The mechanical strength of the U-shaped lower electrode can also be enhanced.
摘要翻译：在电容器下电极的表面的至少一部分上具有HSG的半球状晶粒（HSG）电容器及其形成方法。在电容器中，下电极由至少两个非晶硅层形成，包括掺杂有高浓度杂质的非晶硅层和掺杂有低浓度杂质的非晶硅层，形成HSG，可以调节半球形颗粒，使得形成在U形下电极的内表面上或堆叠的下电极的顶部上的HSG的尺寸大于形成在U形下电极的外表面上的HSG的尺寸或在堆叠的下电极的侧面上。因此，可以通过适当地调节HSG的尺寸来避免相邻的下部电极之间的桥接，导致晶片到晶片和晶片内的均匀电容。也可以提高U形下电极的机械强度。

3. 发明授权

US5854095A Dual source gas methods for forming integrated circuit capacitor electrodes 失效
标题翻译：用于形成集成电路电容器电极的双源气体方法
公开(公告)号：US5854095A
公开(公告)日：1998-12-29
申请号：US778049
申请日：1997-01-02
申请人： Man-sug Kang , Hyun-bo Shin , Seung-joon Ahn , Byung-chul Ahn
发明人： Man-sug Kang , Hyun-bo Shin , Seung-joon Ahn , Byung-chul Ahn
IPC分类号： H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8242
CPC分类号： H01L27/10852 , H01L21/28556 , H01L21/76877 , H01L28/84
摘要： A silicon layer is formed on an integrated circuit substrate using silane and disilane thereby increasing a step coverage for the silicon layer, increasing a deposition rate for the silicon layer, reducing variability of the deposition rate, and reducing local crystallization of the silicon layer. More particularly, the step of forming the silicon layer can include forming a first silicon sublayer on the substrate using a first source gas including silane, and forming a second silicon sublayer on the first silicon sublayer using a second source gas different from the first source gas wherein the second source gas includes disilane. Alternately, the step of forming the silicon layer can include forming the silicon layer on the integrated circuit substrate using a source gas including a mixture of silane and disilane.
摘要翻译：使用硅烷和乙硅烷在集成电路基板上形成硅层，从而提高硅层的阶梯覆盖率，增加硅层的沉积速率，降低沉积速率的变化性，并减少硅层的局部结晶化。更具体地说，形成硅层的步骤可以包括使用包括硅烷的第一源气体在基板上形成第一硅子层，并且使用不同于第一源气体的第二源气体在第一硅子层上形成第二硅子层其中所述第二源气体包括乙硅烷。或者，形成硅层的步骤可以包括使用包括硅烷和乙硅烷的混合物的源气体在集成电路基板上形成硅层。

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