专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07951765B2 Photoresist stripper composition for semiconductor manufacturing 有权
标题翻译：用于半导体制造的光刻胶剥离剂组合物
公开(公告)号：US07951765B2
公开(公告)日：2011-05-31
申请号：US12063745
申请日：2006-08-05
申请人： Hyun Tak Kim , Seong Hwan Park , Jung Hun Lim , Sung Bae Kim , Chan Jin Jeong , Kui Jong Baek
发明人： Hyun Tak Kim , Seong Hwan Park , Jung Hun Lim , Sung Bae Kim , Chan Jin Jeong , Kui Jong Baek
IPC分类号： C11D7/50
CPC分类号： G03F7/425 , G03F7/426
摘要： The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.
摘要翻译：本发明涉及在半导体器件的制造过程中去除光致抗蚀剂的光致抗蚀剂剥离剂组合物。更具体地，光致抗蚀剂剥离剂组合物包含3-20重量％的水合肼或胺化合物; 20〜40重量％的极性溶剂; 0.01-3重量％的选自咪唑啉衍生物，硫化物衍生物，亚砜衍生物，芳族化合物或具有羟基的芳族化合物组成的组中的腐蚀抑制剂; 0.01-5重量％的C2-C10的一元醇化合物; 和40-70重量％的去离子水。用于制造半导体的光致抗蚀剂剥离剂组合物可以通过硬烘烤，干蚀刻，灰化或离子注入去除光致抗蚀剂膜热固性，并且在低温下容易且快速地在所述工艺中从底部金属膜蚀刻的金属副产物变性，在光致抗蚀剂的去除过程中最小化底部金属布线的腐蚀。

2. 发明申请

US20090312216A1 Photoresist Stripper Composition for Semiconductor Manufacturing 有权
标题翻译：半导体制造用光阻剥离剂组合物
公开(公告)号：US20090312216A1
公开(公告)日：2009-12-17
申请号：US12063745
申请日：2006-08-05
申请人： Hyun Tak Kim , Seong Hwan Park , Jung Hun Lim , Sung Bae Kim , Chan Jin Jeong , Kui Jong Baek , Woong Hahn , Sang Won Lee , Gun-Woong Lee
发明人： Hyun Tak Kim , Seong Hwan Park , Jung Hun Lim , Sung Bae Kim , Chan Jin Jeong , Kui Jong Baek , Woong Hahn , Sang Won Lee , Gun-Woong Lee
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , G03F7/426
摘要： The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.
摘要翻译：本发明涉及在半导体器件的制造过程中去除光致抗蚀剂的光致抗蚀剂剥离剂组合物。更具体地，光刻胶剥离剂组合物包含3-20重量％的水合肼或胺化合物; 20〜40wt％极性溶剂; 0.01-3重量％的选自咪唑啉衍生物，硫化物衍生物，亚砜衍生物，芳族化合物或具有羟基的芳族化合物组成的组中的腐蚀抑制剂; 0.01-5重量％的C2-C10的一元醇化合物; 和40-70重量％的去离子水。用于制造半导体的光致抗蚀剂剥离剂组合物可以通过硬烘烤，干蚀刻，灰化或离子注入去除光致抗蚀剂膜热固性，并且在低温下容易且快速地在所述工艺中从底部金属膜蚀刻的金属副产物变性，在光致抗蚀剂的去除过程中最小化底部金属布线的腐蚀。

3. 发明授权

US08247806B2 Field effect transistor having graphene channel layer 有权
标题翻译：具有石墨烯通道层的场效应晶体管
公开(公告)号：US08247806B2
公开(公告)日：2012-08-21
申请号：US12649321
申请日：2009-12-29
申请人： Byung-Gyu Chae , Hyun Tak Kim
发明人： Byung-Gyu Chae , Hyun Tak Kim
IPC分类号： H01L51/30
CPC分类号： H01L29/1606 , H01L29/0673 , H01L29/0895 , H01L29/778 , H01L29/78684 , H01L29/78696 , H01L51/0541
摘要： Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer.
摘要翻译：提供了包括石墨烯通道层的场效应晶体管，并且能够通过使用石墨烯沟道层的石墨烯来提高工作电流的导通/截止比。场效应晶体管包括：衬底; 所述石墨烯通道层设置在所述基板的一部分上并且包括石墨烯; 设置在所述石墨烯通道层的第一区域上的第一电极和所述基板的一部分; 设置在离开第一区域的石墨烯通道层的第二区域上的中间层和基板的一部分; 设置在所述中间层上的第二电极; 设置在石墨烯通道层，第一电极和第二电极的一部分上的栅极绝缘层; 以及设置在栅极绝缘层的一部分上的栅电极。

4. 发明授权

US07728327B2 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material 有权
标题翻译：使用突变金属 - 绝缘体转变半导体材料的2端子半导体器件
公开(公告)号：US07728327B2
公开(公告)日：2010-06-01
申请号：US11011878
申请日：2004-12-13
申请人： Hyun Tak Kim , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
发明人： Hyun Tak Kim , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
IPC分类号： H01L29/04
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625
摘要： Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.
摘要翻译：提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

5. 发明授权

US06987290B2 Current-jump-control circuit including abrupt metal-insulator phase transition device 有权
标题翻译：电流跳跃控制电路包括突变金属 - 绝缘体相变装置
公开(公告)号：US06987290B2
公开(公告)日：2006-01-17
申请号：US10866274
申请日：2004-06-10
申请人： Hyun Tak Kim , Doo Hyeb Youn , Kwang Yong Kang , Byung Gyu Chae , Yong Sik Lim , Seong Hyun Kim , Sungyul Maeng , Gyungock Kim
发明人： Hyun Tak Kim , Doo Hyeb Youn , Kwang Yong Kang , Byung Gyu Chae , Yong Sik Lim , Seong Hyun Kim , Sungyul Maeng , Gyungock Kim
IPC分类号： H01L39/16
CPC分类号： H01L45/00
摘要： A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.
摘要翻译：提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

6. 发明授权

US08242875B2 Thin film type varistor and a method of manufacturing the same 失效
标题翻译：薄膜型压敏电阻及其制造方法
公开(公告)号：US08242875B2
公开(公告)日：2012-08-14
申请号：US12740624
申请日：2008-08-20
申请人： Jung Wook Lim , Jun Kwan Kim , Sun Jin Yun , Hyun Tak Kim
发明人： Jung Wook Lim , Jun Kwan Kim , Sun Jin Yun , Hyun Tak Kim
IPC分类号： H01C7/10
CPC分类号： H01C7/112 , C23C14/086 , C23C14/5853 , H01C7/1013 , H01C17/06546 , Y10T29/49099
摘要： A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.
摘要翻译：提供薄膜型压敏电阻及其制造方法。该方法包括：通过溅射法在低温下沉积第一氧化锌薄膜; 以及通过在注入惰性气体和氧气的环境中在低温下处理第一氧化锌薄膜来形成用于变阻器的氧化锌薄膜。因此，可以在保持压敏电阻特性的同时降低加工温度并简化制造工艺，从而应用于高度集成的电路。

7. 发明申请

US20100209623A1 APPARATUS FOR GROWING LARGE AREA VANADIUM DIOXIDE THIN FILM AND METHOD OF GROWING LARGE AREA OXIDE THIN FILM IN THE APPARATUS 审中-公开
标题翻译：用于生长大面积二氧化硅薄膜的装置和在装置中生长大面积氧化物薄膜的方法
公开(公告)号：US20100209623A1
公开(公告)日：2010-08-19
申请号：US12687185
申请日：2010-01-14
申请人： Bong Jun Kim , Giwan Seo , Hyun Tak Kim
发明人： Bong Jun Kim , Giwan Seo , Hyun Tak Kim
IPC分类号： C23C16/46 , C23C16/00 , C23C16/06
CPC分类号： C23C14/50 , C23C14/083 , C23C14/564
摘要： Provided is a technology for in-situ growing a large area VO2 thin film which is an MIT material without using a conductive adhesive for high temperatures such as a silver paste. Generally, when a VO2 thin film, which is an MIT material, is grown using a PLD or sputtering method under a high temperature, a conductive adhesive is used to improve thermal conduction. However, the thin film may be contaminated by the conductive adhesive and the conductive adhesive should be removed after growing the thin film. Therefore, adherence between the substrate and the surface of a heater when growing the thin film needs to be improved, and thus, a large area VO2 thin film growing apparatus which may grow the large area VO2 thin film easily and a method of growing the large area VO2 thin film are provided.
摘要翻译：本发明提供一种用于原位生长大面积VO2薄膜的技术，该薄膜是MIT材料，而不使用高温下的导电粘合剂如银浆。通常，当使用PLD或溅射法在高温下生长作为MIT材料的VO2薄膜时，使用导电粘合剂来改善导热性。然而，薄膜可能被导电粘合剂污染，并且在生长薄膜之后应该去除导电粘合剂。因此，需要提高生长薄膜时的基板与加热器表面的粘附性，能够容易地生长大面积VO2薄膜的大面积VO2薄膜生长装置，提供面积VO2薄膜。

8. 发明申请

US20100122976A1 THERMISTOR WITH 3 TERMINALS, THERMISTOR-TRANSISTOR, CIRCUIT FOR CONTROLLING HEAT OF POWER TRANSISTOR USING THE THERMISTOR-TRANSISTOR, AND POWER SYSTEM INCLUDING THE CIRCUIT 有权
标题翻译：具有3个端子的热敏电阻器，热敏电阻器，用于使用热敏电阻器控制功率晶体管的电路的电路，以及包括电路的电力系统
公开(公告)号：US20100122976A1
公开(公告)日：2010-05-20
申请号：US12608054
申请日：2009-10-29
申请人： Bongjun KIM , Giwan Seo , Hyun Tak Kim
发明人： Bongjun KIM , Giwan Seo , Hyun Tak Kim
IPC分类号： H05B1/00 , H01L29/66
CPC分类号： H01C7/008 , H01C7/18 , H01L27/0248 , H03K17/08 , H03K2017/0806
摘要： Provided are a thermistor with 3 terminals, a thermistor-transistor including the thermistor, a circuit for controlling heat of a power transistor using the thermistor-transistor, and a power system including the circuit. The circuit includes: a thermistor-transistor which comprises a thermistor having a resistance decreasing with an increase in temperature and a control transistor connected to the thermistor; and at least one power transistor which is connected to a driving device to control a supply of power to the driving device, wherein the thermistor-transistor is adhered to one of a surface and a heat-emitting part of the at least one power transistor and is connected to one of a base, a gate, a collector, and a drain of the at least one power transistor to decrease or block a current flowing in the at least one power transistor when the temperature of the at least one power transistor rises, so as to prevent the power transistor from heating up.
摘要翻译：本发明提供一种具有3个端子的热敏电阻，包括该热敏电阻的热敏电阻晶体管，一个用于控制使用该热敏电阻晶体管的功率晶体管的热量的电路以及包括该电路的电力系统。该电路包括：热敏电阻晶体管，其包括具有随着温度升高而降低的电阻的热敏电阻和连接到热敏电阻的控制晶体管; 以及连接到驱动装置以控制向驱动装置供电的至少一个功率晶体管，其中所述热敏电阻 - 晶体管粘附到所述至少一个功率晶体管的表面和发热部分中的一个，以及连接到所述至少一个功率晶体管的基极，栅极，集电极和漏极中的一个，以在所述至少一个功率晶体管的温度升高时降低或阻断在所述至少一个功率晶体管中流动的电流，以防止功率晶体管升温。

9. 发明申请

US20080277763A1 Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the Wafer 审中-公开
标题翻译：突破式金属绝缘体过渡晶片，以及用于晶片的热处理设备和方法
公开(公告)号：US20080277763A1
公开(公告)日：2008-11-13
申请号：US11997050
申请日：2006-07-04
申请人： Hyun Tak Kim , Byung Gyu Chae , Kwang Yong Kang , Sun Jin Yun
发明人： Hyun Tak Kim , Byung Gyu Chae , Kwang Yong Kang , Sun Jin Yun
IPC分类号： H01L21/322 , H01L29/12 , H05B3/68
CPC分类号： H01L21/324 , H01L21/3245 , H01L21/67103 , H01L21/68728
摘要： Provided are a wafer with the characteristics of abrupt metal-insulator transition (MIT), and a heat treatment apparatus and method that make it possible to mass-produce a large-diameter wafer without directly attaching the wafer to a heater or a substrate holder. The heat treatment apparatus includes a heater applying heat to a wafer having the characteristics of abrupt MIT and one surface covered with a thermally opaque film, and a plurality of fixing units formed along an edge portion of a top surface of the heater to fix the wafer to the heater.
摘要翻译：提供具有突变金属 - 绝缘体转变特性（MIT）的晶片，以及使得可以批量生产大直径晶片而不将晶片直接附接到加热器或基板保持器的热处理设备和方法。热处理装置包括对具有突然MIT特性的突起的晶片加热的加热器和覆盖有不透热膜的一个表面，以及沿着加热器顶面的边缘部分形成的多个固定单元，以固定晶片到加热器。

10. 发明授权

US08420987B2 Thermistor with 3 terminals, thermistor-transistor, circuit for controlling heat of power transistor using the thermistor-transistor, and power system including the circuit 有权
标题翻译：具有3个端子的热敏电阻，热敏电阻晶体管，使用该热敏电阻晶体管来控制功率晶体管的热的电路，以及包含该电路的电力系统
公开(公告)号：US08420987B2
公开(公告)日：2013-04-16
申请号：US12608054
申请日：2009-10-29
申请人： Bongjun Kim , Giwan Seo , Hyun Tak Kim
发明人： Bongjun Kim , Giwan Seo , Hyun Tak Kim
IPC分类号： H05B1/00 , H01L29/66
CPC分类号： H01C7/008 , H01C7/18 , H01L27/0248 , H03K17/08 , H03K2017/0806
摘要： Provided are a thermistor with 3 terminals, a thermistor-transistor including the thermistor, a circuit for controlling heat of a power transistor using the thermistor-transistor, and a power system including the circuit. The circuit includes: a thermistor-transistor which comprises a thermistor having a resistance decreasing with an increase in temperature and a control transistor connected to the thermistor; and at least one power transistor which is connected to a driving device to control a supply of power to the driving device, wherein the thermistor-transistor is adhered to one of a surface and a heat-emitting part of the at least one power transistor and is connected to one of a base, a gate, a collector, and a drain of the at least one power transistor to decrease or block a current flowing in the at least one power transistor when the temperature of the at least one power transistor rises, so as to prevent the power transistor from heating up.
摘要翻译：本发明提供一种具有3个端子的热敏电阻，包括该热敏电阻的热敏电阻晶体管，一个用于控制使用该热敏电阻晶体管的功率晶体管的热量的电路以及包括该电路的电力系统。该电路包括：热敏电阻晶体管，其包括具有随着温度升高而降低的电阻的热敏电阻和连接到热敏电阻的控制晶体管; 以及连接到驱动装置以控制向驱动装置供电的至少一个功率晶体管，其中所述热敏电阻 - 晶体管粘附到所述至少一个功率晶体管的表面和发热部分中的一个，以及连接到所述至少一个功率晶体管的基极，栅极，集电极和漏极中的一个，以在所述至少一个功率晶体管的温度升高时降低或阻断在所述至少一个功率晶体管中流动的电流，以防止功率晶体管升温。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式