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1. 发明授权

US11355319B2 Plasma processing apparatus 有权
公开(公告)号：US11355319B2
公开(公告)日：2022-06-07
申请号：US16216455
申请日：2018-12-11
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Luke Joseph Himbele , Yasushi Sonoda , Takashi Uemura , Tomoyoshi Ichimaru , Junya Sasaki
IPC分类号： H01J37/32 , H01L21/3065 , F16K31/12 , F16K31/06 , F16K51/02 , C23C16/455
摘要： The present invention is a plasma processing apparatus that includes a processing chamber where plasma processing is performed on a sample, a radio frequency power supply that supplies radio frequency power to generate plasma, a sample stage on which the sample is placed, and a gas supply unit that supplies a gas to the processing chamber. The gas supply unit includes a first pipe that supplies a first gas as a gas for etching process to the processing chamber, a second pipe that supplies a second gas as a gas for etching process to the processing chamber, and a third pipe through which a third gas as a gas for deposition process flows. The third pipe is coupled to the second pipe. A fourth valve is arranged on the second pipe. The fourth valve prevents the third gas from flowing in a direction toward a supply source of the second gas.

2. 发明授权

US11776792B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US11776792B2
公开(公告)日：2023-10-03
申请号：US17276714
申请日：2020-04-03
申请人： Hitachi High-Tech Corporation
发明人： Shunsuke Tashiro , Takashi Uemura , Shengnan Yu , Yasushi Sonoda , Kiyohiko Sato , Masahiro Nagatani
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32449 , H01J37/32 , H01J37/32834 , H01L21/30655 , H01L21/31116 , H01J2237/334
摘要： A plasma processing apparatus or a plasma processing method having an improved yield, the plasma processing apparatus includes: a processing chamber arranged inside a vacuum container; a processing gas supply line connecting to the vacuum container, communicating with the processing chamber, and configured to supply processing gas having adhesiveness to the processing chamber; and a gas exhaust line for the processing gas connecting and communicating the processing gas supply line with a processing chamber exhaust line that is connected to an exhaust pump and communicates with the processing chamber, in which the plasma processing apparatus exhausts the processing gas in the processing gas supply line through the gas exhaust line and the processing chamber exhaust line in a state where supplying of the processing gas to the processing chamber is stopped between one processing step of etching the wafer and a subsequent processing step.

3. 发明授权

US11600472B2 Vacuum processing apparatus and operating method of vacuum processing apparatus 有权
公开(公告)号：US11600472B2
公开(公告)日：2023-03-07
申请号：US15902837
申请日：2018-02-22
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Ryoichi Isomura , Yuusaku Sakka , Kouhei Satou , Takashi Uemura , Satoshi Yamamoto , Hiromichi Kawasaki
IPC分类号： H01J37/18 , H01J37/32 , H01J37/34 , H01L21/67 , H01L21/677 , H01L21/687
摘要： There is provided a vacuum processing apparatus in which at least one of the processing units includes a lower member and an upper member mounted on the lower member to be attachable and detachable that configure the vacuum container, a turning shaft member which is attached to an outer circumferential part of the base plate between the work space and the vacuum container, and has a turning shaft that moves from above the base plate when the turning shaft is connected to the lower member and the lower member turns around the connected part, and a maintenance member including an arm which is disposed above the turning shaft member and turns in a horizontal direction as the upper member is suspended, and in which the lower member is configured to be fixable at the position at a predetermined angle within a range of an angle at which the lower member is capable of turning around the shaft, and to be vertically movable as the arm of the maintenance member fixes the position above a center portion of the lower member of which the position is fixed within a range of the angle at which the lower member is capable of turning, and the upper member is suspended.

4. 发明申请

US20220115212A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
公开(公告)号：US20220115212A1
公开(公告)日：2022-04-14
申请号：US17276714
申请日：2020-04-03
申请人： Hitachi High-Tech Corporation
发明人： Shunsuke Tashiro , Takashi Uemura , Shengnan Yu , Yasushi Sonoda , Kiyohiko Sato , Masahiro Nagatani
IPC分类号： H01J37/32 , H01L21/3065
摘要： A plasma processing apparatus or a plasma processing method having an improved yield, the plasma processing apparatus includes: a processing chamber arranged inside a vacuum container; a processing gas supply line connecting to the vacuum container, communicating with the processing chamber, and configured to supply processing gas having adhesiveness to the processing chamber; and a gas exhaust line for the processing gas connecting and communicating the processing gas supply line with a processing chamber exhaust line that is connected to an exhaust pump and communicates with the processing chamber, in which the plasma processing apparatus exhausts the processing gas in the processing gas supply line through the gas exhaust line and the processing chamber exhaust line in a state where supplying of the processing gas to the processing chamber is stopped between one processing step of etching the wafer and a subsequent processing step.

5. 发明授权

US10763088B2 Vacuum processing apparatus 有权
公开(公告)号：US10763088B2
公开(公告)日：2020-09-01
申请号：US16111752
申请日：2018-08-24
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Takashi Uemura , Takamasa Ichino , Kazunori Nakamoto , Kohei Sato
IPC分类号： H01J37/32
摘要： Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing. The vacuum processing apparatus includes: a cylindrical pedestal which is disposed below a base plate that constitutes a specimen stage and is made of a metal, whose internal space is under an atmospheric pressure, and which is connected to the base plate in a state in which the base plate, and a base member and an insulating member fastened to the base plate are placed; a plate-shaped beam part which is disposed in the space of the pedestal with a gap from a lower surface of the base plate, and extends outward from the center of the space in a T or Y shape; a plurality of pins that pass through the beam part, the base plate, the insulating member, and the base member, support the specimen on tips thereof on an upper side of the specimen stage, and vertically move the specimen; a pin drive unit that is mounted on a lower surface of the center of the beam part; and a seal that is disposed around a through-hole through which each of the plurality of pins passes, and airtightly seals the inside and the outside.

6. 发明公开

US20240290581A1 PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20240290581A1
公开(公告)日：2024-08-29
申请号：US18025766
申请日：2022-03-09
申请人： Hitachi High-Tech Corporation
发明人： Shengnan Yu , Takashi Uemura , Kohei Sato
IPC分类号： H01J37/32
CPC分类号： H01J37/32724 , H01J37/32816 , H01J2237/24585 , H01J2237/334
摘要： A plasma processing apparatus includes a sample table base that is placed on a periphery of a sample table, a pressure sensor that is connected to the sample table base through a connecting pipe and a buffer part, a heater that forms a temperature gradient in which temperatures of the connecting pipe and the buffer part rise toward the pressure sensor, and adjusts heating to bring the pressure sensor to a temperature similar to a plasma generation space above the sample table, and a rectangular base plate that is placed under the sample table base. The pressure sensor is stored in a place partitioned by a heat insulating plate at a corner of the base plate outside the sample table base on the rectangular base plate, and an inside and an outside of the corner part are communicated with each other through an opening.

7. 发明申请

US20220389575A1 VACUUM PROCESSING APPARATUS 有权
公开(公告)号：US20220389575A1
公开(公告)日：2022-12-08
申请号：US17886712
申请日：2022-08-12
申请人： Hitachi High-Tech Corporation
发明人： Takashi Uemura , Susumu Tauchi , Kohei Sato , Eiji Maruyama
IPC分类号： C23C16/44 , C23C16/505 , H01J37/32 , C23C16/46 , H01L21/67
摘要： A vacuum processing apparatus with excellent processing uniformity and capable of effectively performing routine and non-routine maintenance even when an object to be processed has an increased diameter is provided. In the vacuum processing apparatus having a vacuum transfer chamber, this apparatus comprises a lower vessel having a cylindrical shape, a sample stage unit including a sample stage and a ring-shaped sample stage base having support beams disposed axisymmetric with respect to a central axis of the sample stage, an upper vessel having a cylindrical shape, and a moving mechanism which is fixed to the sample stage base and is capable to move the sample stage unit movable in a vertical direction and in a horizontal direction.

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