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    • 1. 发明授权
    • Variable pulse width generator including a timer vernier
    • 可变脉冲宽度发生器,包括定时器VERNIER
    • US5122676A
    • 1992-06-16
    • US620681
    • 1990-12-03
    • Roger G. StewartGeorge R. Briggs
    • Roger G. StewartGeorge R. Briggs
    • G09G3/20G09G3/36H03M1/82
    • G09G3/2011G09G3/3688G09G2310/0259G09G2310/027
    • A pulse logic circuit comprises a plurality of interconnected stages. Each of the stages includes a relatively large node-charging transistor which, when enabled, forwards charging current to a node from a timing pulse of one of a plurality of phases applied to a load capacitance in series with the node-charging transistor. Such large transistors exhibit significant gate-to-source and gate-to drain distributed capacitances. The response time for charging a selected stage node can be decreased by precharging the gate of the node-charging transistor of a selected stage to enable the transistor prior to the application of a timing pulse, thereby increasing the maximum operating speed of the circuit. Disclosed species of such a pulse logic circuit include time vernier circuits which can be utilized as control circuitry for a liquid crystal television or computer display.
    • 脉冲逻辑电路包括多个互连级。 每个级包括相对较大的节点充电晶体管,其在使能时,从施加到与节点充电晶体管串联的负载电容的多个相中的一个相的定时脉冲向节点转发充电电流。 这种大型晶体管表现出显着的栅极到源极和栅极到漏极分布电容。 通过对选定级的节点充电晶体管的栅极进行预充电,可以在施加定时脉冲之前使晶体管使能,从而提高电路的最大工作速度,可以减小对选定级节点充电的响应时间。 这种脉冲逻辑电路的公开物种包括可用作液晶电视或计算机显示器的控制电路的时间游标电路。
    • 5. 发明授权
    • Method for fabricating a switching transistor having a capacitive
network proximate a drift region
    • 一种用于制造具有靠近漂移区域的电容网络的开关晶体管的方法
    • US5587329A
    • 1996-12-24
    • US295374
    • 1994-08-24
    • Fu-Lung HseuhAlfred C. IpriGary M. DolnyRoger G. Stewart
    • Fu-Lung HseuhAlfred C. IpriGary M. DolnyRoger G. Stewart
    • H01L29/786G09G3/30H01L27/088H01L27/12H01L21/786
    • H01L27/1203G09G3/30H01L27/088H01L27/12G09G2300/0842
    • In an active matrix electroluminescent display, a pixel containing a grounded conductive electric field shield between an EL cell and the switching electronics for the EL cell. In a method of fabricating the pixel, first, an EL cell switching circuit is formed, then an insulating layer is formed over the switching circuit and a conductive layer (the field shield) is formed over the insulating layer. A through hole is provided in the field shield such that an electrical connection can be made between the switching circuit and an EL cell. The EL cell is then conventionally formed on top of the shield layer. Consequently, the shield isolates the switching circuit from the EL cell and ensures that any electric fields produced in the EL cell do not interfere with the operation of the switching electronics. Furthermore, the switching circuitry for each cell contains two transistors; a low voltage MOS transistor and a high voltage MOS transistor. The low voltage transistor is controlled by signals on a data and a select line. When activated, the low voltage transistor activates the high voltage transistor by charging the gate of the high voltage transistor. This gate charge is stored between the gate electrode of the high voltage transistor and the electric field shield. Additionally, to improve the breakdown voltage of the high voltage transistor, a capacitive divider network is fabricated proximate the drift region of that transistor. As such, the network uniformly distributes an electric field over the drift region.
    • 在有源矩阵电致发光显示器中,包含EL单元和用于EL单元的开关电子器件之间的接地导电电场屏蔽的像素。 在制造像素的方法中,首先,形成EL单元切换电路,然后在开关电路上形成绝缘层,并且在绝缘层上形成导电层(场屏蔽)。 在屏蔽层中设置通孔,使得可以在开关电路和EL单元之间形成电连接。 然后通常将EL电池形成在屏蔽层的顶部。 因此,屏蔽将开关电路与EL单元隔离,并确保在EL单元中产生的任何电场不会干扰开关电子器件的操作。 此外,每个单元的开关电路包含两个晶体管; 低压MOS晶体管和高压MOS晶体管。 低电压晶体管由数据和选择线上的信号控制。 当激活时,低压晶体管通过对高电压晶体管的栅极充电来激活高电压晶体管。 该栅极电荷存储在高电压晶体管的栅电极和电场屏蔽之间。 另外,为了提高高压晶体管的击穿电压,在该晶体管的漂移区附近制造电容分压网络。 这样,网络在漂移区域上均匀地分布电场。
    • 6. 发明授权
    • Electronic time vernier circuit
    • 电子时间维修电路
    • US5122792A
    • 1992-06-16
    • US541653
    • 1990-06-21
    • Roger G. Stewart
    • Roger G. Stewart
    • G09G3/00G09G3/20G09G3/36H03K5/13H03K7/08H04N1/405
    • G09G3/2011G09G3/3688H03K5/133H03K7/08H04N1/4056G09G2310/0259G09G2310/027
    • A drive circuit for a liquid crystal display converts a display information signal to an n bit gray scale code to control the brightness at a prescribed pixel. A counter receives the m most significant bits of the n bit gray scale code and a latch receives the n-m least significant bits of the n bit gray scale code. The counter is decremented by clock pulses occurring at predetermined intervals and a set of 2.sup.n-m sub-interval timing signals are generated in response to each clock pulse. A transfer gate is enabled by an interval initiating pulse to permit charging of the pixel. One of the sub-interval timing signals is selected in response to the n-m least significant bits of the n bit gray scale code stored in the latch. The transfer gate is disabled by the sub-interval timing signal immediately succeeding the decrementing of the counter to its zero state.
    • 用于液晶显示器的驱动电路将显示信息信号转换为n位灰度代码,以控制规定像素处的亮度。 计数器接收n位灰度代码的m个最高有效位,并且锁存器接收n位灰度代码的n-m个最低有效位。 计数器由以预定间隔发生的时钟脉冲递减,并且响应于每个时钟脉冲产生一组2n-m个次间隔定时信号。 传输门通过间隔起始脉冲启用以允许对像素充电。 响应于存储在锁存器中的n位灰度代码的n-m个最低有效位来选择子间隔定时信号之一。 传输门由紧邻计数器递减到其零状态的子间隔定时信号禁用。
    • 8. 发明授权
    • Integrated matrix display circuitry
    • 集成矩阵显示电路
    • US4963860A
    • 1990-10-16
    • US150812
    • 1988-02-01
    • Roger G. Stewart
    • Roger G. Stewart
    • G09G3/20G09G3/36
    • G09G3/3677G09G3/3648G09G3/3688G09G2310/0205G09G2310/0224G09G2310/0297
    • A matrix display apparatus fabricated in low mobility material includes integrated commutating circuitry for applying data signals to the display elements. The commutating circuitry includes demultiplexing circuitry coupled to a first set of latch elements. These latch elements are coupled to a second set of latch elements via transmission gates, and the output terminals of the second set of latch elements are coupled to column buffers. The demultiplexing circuitry includes pass transistors to coupled display signals to respective ones of the first set of latches. The first set of latches are preconditioned by appropriate timing signals so that the demultiplexor pass transistors operate in a common source mode to shorten the overall switching time of the commutating circuitry.
    • 以低迁移率材料制造的矩阵显示装置包括用于向显示元件施加数据信号的集成整流电路。 整流电路包括耦合到第一组锁存元件的解复用电路。 这些锁存元件经由传输门耦合到第二组锁存元件,并且第二组锁存元件的输出端耦合到列缓冲器。 解复用电路包括传输晶体管以将显示信号耦合到第一组锁存器中的相应的一个。 第一组锁存器由适当的定时信号预处理,使得解复用器传递晶体管以共同的源模式工作,以缩短整流电路的整体切换时间。