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1. 发明授权

US09637468B2 Process for manufacturing 5-(2,6-di-4-morpholinyl-4-pyrimidinyl)-4-trifluoromethylpyridin-2-amine 有权
公开(公告)号：US09637468B2
公开(公告)日：2017-05-02
申请号：US14437177
申请日：2013-10-21
申请人： Dietmar Flubacher , Nicole Bieri , Murat Acemoglu , Pascal Michel , Rasmus Mose , Hans Stettler , Maria Caterina Testa , Joerg Brozio , Frank Schaefer
发明人： Dietmar Flubacher , Nicole Bieri , Murat Acemoglu , Pascal Michel , Rasmus Mose , Hans Stettler , Maria Caterina Testa , Joerg Brozio , Frank Schaefer
IPC分类号： C07D401/04 , C07D213/75 , C07F5/02 , C07D413/14 , A61K31/5377 , A61K31/506 , A61K31/4433 , A61K31/444 , C07D401/14 , C07D239/28 , C07D239/42
CPC分类号： C07D401/04 , C07D213/75 , C07D239/28 , C07D239/42 , C07D401/14 , C07F5/025
摘要： The invention discloses improved processes for manufacturing a compound, 5-(2,6-Di-4-morpholinyl-4-pyrimidinyl)-4-trifluoromethylpyridin-2-amine, its monohydrochloride salt and intermediates thereof.

2. 发明申请

US20150246897A1 Process for Manufacturing 5-(2,6-Di-4-morpholinyl-4-pyrimidinyl)-4-trifluoromethylpyridin-2-amine 有权
标题翻译：制备5-（2,6-二-4-吗啉基-4-嘧啶基）-4-三氟甲基吡啶-2-胺的方法
公开(公告)号：US20150246897A1
公开(公告)日：2015-09-03
申请号：US14437177
申请日：2013-10-21
申请人： Dietmar FLUBACHER , Nicole BIERI , Murat ACEMOGLU , Pascal MICHEL , Rasmus MOSE , Hans STETTLER , Caterina Maria TESTA , Jörg BROZIO , Frank SCHAEFER
发明人： Flubacher Dietmar , Nicole Bieri , Murat Acemoglu , Pascal Michel , Rasmus Mose , Hans Stettler , Maria Caterina Testa , Joerg Brozio , Frank Schaefer
IPC分类号： C07D401/04 , C07F5/02 , C07D213/75
CPC分类号： C07D401/04 , C07D213/75 , C07D239/28 , C07D239/42 , C07D401/14 , C07F5/025
摘要： The invention discloses improved processes for manufacturing a compound, 5-(2,6-Di-4-morpholinyl-4-pyrimidinyl)-4-trifluoromethylpyridin-2-amine, its monohydrochloride salt and intermediates thereof.
摘要翻译：本发明公开了制备化合物5-（2,6-二 - 4-吗啉基-4-嘧啶基）-4-三氟甲基吡啶-2-胺，其单盐酸盐及其中间体的改进方法。

3. 发明授权

US08784964B2 Composite part as well as a method for manufacturing a composite part 有权
标题翻译：复合部件以及复合部件的制造方法
公开(公告)号：US08784964B2
公开(公告)日：2014-07-22
申请号：US13232726
申请日：2011-09-14
申请人： Frank Schaefer
发明人： Frank Schaefer
IPC分类号： B60N2/58
CPC分类号： B60N2/5816 , B60N2/5825 , B60N2/5883 , B60R13/02 , B60R13/0206 , B60R2013/0293 , Y10T428/19 , Y10T428/198 , Y10T428/24479
摘要： A composite part includes a sub-material having a compression hardness of up to 50 kPa with a compression of 40% and a recess formed in the sub-material. A first skin and a second skin are connected at a seam that is disposed within the recess. A holding profile that includes a groove having side walls and a base and at least one wing is introduced into the recess.
摘要翻译：复合部件包括压缩硬度高达50kPa，压缩率为40％的子材料和在副材料中形成的凹部。第一皮肤和第二皮肤在设置在凹部内的接缝处连接。包括具有侧壁和基部以及至少一个翼的凹槽的保持轮廓被引入到凹部中。

4. 发明授权

US07572661B2 Method for manufacturing a micromechanical sensor element 有权
标题翻译：微机械传感器元件的制造方法
公开(公告)号：US07572661B2
公开(公告)日：2009-08-11
申请号：US11223637
申请日：2005-09-08
申请人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
发明人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
IPC分类号： H01L21/00
CPC分类号： B81C1/00047 , B81B2203/0109 , B81C2201/0115 , B81C2201/0116 , G01L9/0045
摘要： Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.
摘要翻译：描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。这种格子状结构优选地从半导体的表面延伸到深度。用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

5. 发明授权

US07479232B2 Method for producing a semiconductor component and a semiconductor component produced according to the method 有权
标题翻译：用于制造根据该方法制造的半导体部件和半导体部件的方法
公开(公告)号：US07479232B2
公开(公告)日：2009-01-20
申请号：US11221228
申请日：2005-09-06
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
IPC分类号： H01L21/302 , B81C1/00
CPC分类号： G01L9/0042 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00047 , B81C1/00595 , B81C2201/0115 , G01L9/0045 , H01L21/3063
摘要： A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.
摘要翻译：一种用于制造半导体部件的方法，例如多层半导体元件，例如具有例如由硅制成的半导体衬底的微机械部件，例如压力传感器，以及根据该方法制造的半导体部件。为了降低这种半导体部件的制造成本，在第一步骤中，在半导体部件中制造第一多孔层，在第二工序中，在半导体部件的第一多孔层的下面或从半导体部件的第一多孔层制造中空或空腔，所述中空或空腔能够设置有外部通路口。

6. 发明申请

US20080286970A1 Method for producing a semiconductor component and a semiconductor component produced according to the method 有权
标题翻译：用于制造根据该方法制造的半导体部件和半导体部件的方法
公开(公告)号：US20080286970A1
公开(公告)日：2008-11-20
申请号：US12152241
申请日：2008-05-12
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
IPC分类号： H01L21/306
CPC分类号： G01L9/0042 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00047 , B81C1/00595 , B81C2201/0115 , G01L9/0045 , H01L21/3063
摘要： A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.
摘要翻译：一种制造半导体部件的方法包括在所述半导体部件的p掺杂层中形成n掺杂层，其中所述n掺杂层包括以下中的至少一种：筛状层或网状层。该方法还包括在n掺杂层的材料之间对p-掺杂层进行腐蚀蚀刻以形成顶部电极，以及在n-掺杂层下方形成空腔。

7. 发明申请

US20070279845A1 Corrosion Protection for Pressure Sensors 审中-公开
标题翻译：压力传感器的腐蚀保护
公开(公告)号：US20070279845A1
公开(公告)日：2007-12-06
申请号：US10588219
申请日：2005-02-07
申请人： Winfried Kuhnt , Wilfried Ihl , Andreas Junger , Hubert Benzel , Markus Muzic , Lutz Mueller , Frank Schaefer , Roland Guenschel , Marco Holst , Frank Wehrmann , Polichronis Lepidis , Gabriele Godzik , Kristin Weinert
发明人： Winfried Kuhnt , Wilfried Ihl , Andreas Junger , Hubert Benzel , Markus Muzic , Lutz Mueller , Frank Schaefer , Roland Guenschel , Marco Holst , Frank Wehrmann , Polichronis Lepidis , Gabriele Godzik , Kristin Weinert
IPC分类号： G01D11/24 , H05K7/00
CPC分类号： G01L19/147 , G01L19/0645 , H01L2224/48091 , H01L2924/00014
摘要： The present invention describes a device having a housing and at least one electrical component, the housing having at least one of the electrical components and being filled at least partially by a passivating agent. Furthermore, it is provided that the electrical component is covered at least partially by the passivating agent. Now, the crux of the present invention is that an additional material layer is applied on top of the passivating agent. Using this additional material layer, a device is able to be implemented in a simple and cost-effective construction, that is resistive to environmental damages. This makes possible using electrical components in corrosive environments.
摘要翻译：本发明描述了一种具有壳体和至少一个电气部件的装置，该壳体具有至少一个电气部件并至少部分地被钝化剂填充。此外，规定电气部件至少部分被钝化剂覆盖。现在，本发明的关键是在钝化剂的顶部上施加另外的材料层。使用这种额外的材料层，设备能够以简单且具有成本效益的结构来实现，这是抵制环境损害的。这使得在腐蚀性环境中使用电气部件成为可能。

8. 发明申请

US20070027282A1 Production of colourless, transparent or opaque coloured plexiglas blocks from a prepolymer that is devoid of residual initiators by thermal polymerisation 审中-公开
标题翻译：通过热聚合从预聚物制备无残留引发剂的无色，透明或不透明的有机玻璃块
公开(公告)号：US20070027282A1
公开(公告)日：2007-02-01
申请号：US10576146
申请日：2004-09-15
申请人： Klaus Kabs , Frank Schaefer , Karl-Heinz Jakob , Bernd Klossek
发明人： Klaus Kabs , Frank Schaefer , Karl-Heinz Jakob , Bernd Klossek
IPC分类号： C08F118/02
CPC分类号： C08F265/06 , C08J5/18 , C08J2333/12 , C08F2/02
摘要： The invention relates to a method for producing polymethyl methacrylate (PMMA) blocks with thicknesses greater than or equal to 200 mm.
摘要翻译：本发明涉及厚度大于或等于200mm的聚甲基丙烯酸甲酯（PMMA）块的制造方法。

9. 发明申请

US20060137460A1 Micromechanical component and method 失效
标题翻译：微机械部件和方法
公开(公告)号：US20060137460A1
公开(公告)日：2006-06-29
申请号：US10529420
申请日：2003-03-06
申请人： Gerhard Lammel , Simon Armbruster , Frank Schaefer , Hubert Benzel
发明人： Gerhard Lammel , Simon Armbruster , Frank Schaefer , Hubert Benzel
IPC分类号： G01L9/00
CPC分类号： B81B7/0038 , B81C2201/0115
摘要： A micromechanical component and a method for producing a micromechanical component are proposed, a hollow space and a region of porous silicon being provided, the region of porous silicon being provided for lowering the pressure prevailing in the hollow space.
摘要翻译：提出了一种微机械部件和微机械部件的制造方法，提供了中空空间和多孔硅的区域，提供了多孔硅的区域，用于降低中空空间中的压力。

10. 发明申请

US20060063293A1 Micromechanical sensor element 有权
标题翻译：微机械传感器元件
公开(公告)号：US20060063293A1
公开(公告)日：2006-03-23
申请号：US11223637
申请日：2005-09-08
申请人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
发明人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
IPC分类号： H01L21/00
CPC分类号： B81C1/00047 , B81B2203/0109 , B81C2201/0115 , B81C2201/0116 , G01L9/0045
摘要： Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.
摘要翻译：描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。这种格子状结构优选地从半导体的表面延伸到深度。用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

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