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1. 发明申请

US20110226420A1 ELECTRODE AND PLASMA PROCESSING APPARATUS 有权
标题翻译：电极和等离子体加工设备
公开(公告)号：US20110226420A1
公开(公告)日：2011-09-22
申请号：US13046900
申请日：2011-03-14
申请人： Daisuke Hayashi , Shoichiro Matsuyama , Koichi Murakami
发明人： Daisuke Hayashi , Shoichiro Matsuyama , Koichi Murakami
IPC分类号： C23F1/08 , C23C16/455 , C23C16/50
CPC分类号： H01J37/3266 , H01J37/32091 , H01J37/32541
摘要： There is provided a plasma processing apparatus including a processing chamber 100 configured to perform a plasma process on a wafer W; an upper electrode 105 and a lower electrode 110 arranged to face each other in the processing chamber 100 and configured to form a processing space therebetween; and a high frequency power supply 150 connected with at least one of the upper electrode 105 and the lower electrode 110 and configured to output a high frequency power into the processing chamber 100. The upper electrode 105 includes an upper base 105a made of a dielectric material, and a plurality of fine holes A having a diameter equal to or less than twice a thickness of a sheath are formed in the upper base 105a.
摘要翻译：提供了一种等离子体处理装置，其包括：处理室100，被配置为对晶片W执行等离子体处理; 上部电极105和下部电极110，其配置成在处理室100中彼此面对，并且构成为在其间形成处理空间; 以及与上部电极105和下部电极110中的至少一个连接并构成为向处理室100输出高频电力的高频电源150.上部电极105包括由介电材料制成的上部基座105a 并且在上部基座105a中形成具有等于或小于鞘的厚度的两倍的多个细孔A.

2. 发明授权

US08920598B2 Electrode and plasma processing apparatus 有权
标题翻译：电极和等离子体处理装置
公开(公告)号：US08920598B2
公开(公告)日：2014-12-30
申请号：US13046900
申请日：2011-03-14
申请人： Daisuke Hayashi , Shoichiro Matsuyama , Koichi Murakami
发明人： Daisuke Hayashi , Shoichiro Matsuyama , Koichi Murakami
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/3266 , H01J37/32091 , H01J37/32541
摘要： There is provided a plasma processing apparatus including a processing chamber 100 configured to perform a plasma process on a wafer W; an upper electrode 105 and a lower electrode 110 arranged to face each other in the processing chamber 100 and configured to form a processing space therebetween; and a high frequency power supply 150 connected with at least one of the upper electrode 105 and the lower electrode 110 and configured to output a high frequency power into the processing chamber 100. The upper electrode 105 includes an upper base 105a made of a dielectric material, and a plurality of fine holes A having a diameter equal to or less than twice a thickness of a sheath are formed in the upper base 105a.
摘要翻译：提供了一种等离子体处理装置，其包括：处理室100，被配置为对晶片W执行等离子体处理; 上部电极105和下部电极110，其配置成在处理室100中彼此面对，并且构成为在其间形成处理空间; 以及与上部电极105和下部电极110中的至少一个连接并构成为向处理室100输出高频电力的高频电源150.上部电极105包括由介电材料制成的上部基座105a 并且在上部基座105a中形成具有等于或小于鞘的厚度的两倍的多个细孔A.

3. 发明授权

US07023002B2 Surface treating device and surface treating method 失效
标题翻译：表面处理装置及表面处理方法
公开(公告)号：US07023002B2
公开(公告)日：2006-04-04
申请号：US10895039
申请日：2004-07-21
申请人： Kazuya Nagaseki , Tadashi Onishi , Koichi Murakami , Daisuke Hayashi , Akiko Kamigori , Minoru Honda
发明人： Kazuya Nagaseki , Tadashi Onishi , Koichi Murakami , Daisuke Hayashi , Akiko Kamigori , Minoru Honda
IPC分类号： G21G5/00 , H01J37/00
CPC分类号： H01L21/67161 , G03F7/40 , H01J2237/31 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/68785
摘要： Installed in a vacuum chamber is a mounting table for supporting semiconductor wafer, which is a substrate to be treated, with an electron beam irradiation mechanism mounted on the ceiling of the vacuum chamber for generating electron beams. The mounting table is adapted to be vertically moved by a lifting/lowering device, allowing the distance between the electron beam irradiating mechanism and the semiconductor wafer to be set at a desired value. This makes it possible to perform a uniform satisfactory treatment over the entire surface of the substrate to be treated.
摘要翻译：安装在真空室中的是用于支撑作为待处理基板的半导体晶片的安装台，其中电子束照射机构安装在用于产生电子束的真空室的天花板上。安装台适于通过提升/降低装置垂直移动，允许将电子束照射机构和半导体晶片之间的距离设定在期望值。这使得可以对待处理的基底的整个表面进行均匀的令人满意的处理。

4. 发明授权

US09550194B2 Gas shower structure and substrate processing apparatus 有权
标题翻译：气体淋浴结构和基材加工设备
公开(公告)号：US09550194B2
公开(公告)日：2017-01-24
申请号：US13020104
申请日：2011-02-03
申请人： Daisuke Hayashi , Koichi Murakami
发明人： Daisuke Hayashi , Koichi Murakami
IPC分类号： C23C16/455 , B05B1/18 , C23C16/00 , C23F1/08
CPC分类号： B05B1/18 , C23C16/00 , C23C16/455 , C23F1/08
摘要： Screws 4 are inserted from a bottom surface of a ceiling plate 32 and screwed to a base plate 31, and the ceiling plate 32 and the base plate 31 are press-connected to each other by an elastic restoring force of an elastic member 51 interposed between a head of the screw 4 and the ceiling plate 32. A gap is formed between the head and the ceiling plate 32. Further, a periphery of the head is covered with a cover via a ring-shaped elastic member 52. In another embodiment, a periphery of a base plate 31 is protruded from a periphery of a ceiling plate 32, and the protruded portion of the base plate 31 and a ring-shaped clamp positioned at an outer side of the ceiling plate 32 are joined by screws. Here, an elastic member is interposed between the clamp and the ceiling plate 32.
摘要翻译：螺钉4从顶板32的底面插入并拧到基板31上，顶板32和基板31通过弹性件51的弹性回复力彼此压接，螺钉4的头部和顶板32.在头部和顶板32之间形成有间隙。此外，头部的周围通过环形弹性构件52被盖覆盖。在另一个实施例中，基板31的周边从顶板32的周边突出，并且基板31的突出部分和位于顶板32的外侧的环形夹具通过螺钉接合。这里，弹性构件插入在夹具和顶板32之间。

5. 发明申请

US20110186229A1 GAS SHOWER STRUCTURE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：气体淋浴结构和底板加工设备
公开(公告)号：US20110186229A1
公开(公告)日：2011-08-04
申请号：US13020104
申请日：2011-02-03
申请人： Daisuke Hayashi , Koichi Murakami
发明人： Daisuke Hayashi , Koichi Murakami
IPC分类号： C23F1/08 , C23C16/00 , B05B1/18
CPC分类号： B05B1/18 , C23C16/00 , C23C16/455 , C23F1/08
摘要： Screws 4 are inserted from a bottom surface of a ceiling plate 32 and screwed to a base plate 31, and the ceiling plate 32 and the base plate 31 are press-connected to each other by an elastic restoring force of an elastic member 51 interposed between a head of the screw 4 and the ceiling plate 32. A gap is formed between the head and the ceiling plate 32. Further, a periphery of the head is covered with a cover via a ring-shaped elastic member 52. In another embodiment, a periphery of a base plate 31 is protruded from a periphery of a ceiling plate 32, and the protruded portion of the base plate 31 and a ring-shaped clamp positioned at an outer side of the ceiling plate 32 are joined by screws. Here, an elastic member is interposed between the clamp and the ceiling plate 32.
摘要翻译：螺钉4从顶板32的底面插入并拧到基板31上，顶板32和基板31通过弹性件51的弹性回复力彼此压接，螺钉4的头部和顶板32.在头部和顶板32之间形成有间隙。此外，头部的周围通过环形弹性构件52被盖覆盖。在另一个实施例中，基板31的周边从顶板32的周边突出，并且基板31的突出部分和位于顶板32的外侧的环形夹具通过螺钉接合。这里，弹性构件插入在夹具和顶板32之间。

6. 发明授权

US09625191B2 Condensing apparatus 有权
公开(公告)号：US09625191B2
公开(公告)日：2017-04-18
申请号：US14112889
申请日：2012-04-13
申请人： Ryo Fujisawa , Masatake Toshima , Yoshihiro Nakayama , Yoshitaka Baba , Satoshi Ide , Koichiro Iizuka , Kunihiko Suto , Hiroshi Egawa , Ichirou Sakuraba , Daisuke Hayashi , Keiji Sugano , Hans Madsboll , Klaus Damgaard Kristensen
发明人： Ryo Fujisawa , Masatake Toshima , Yoshihiro Nakayama , Yoshitaka Baba , Satoshi Ide , Koichiro Iizuka , Kunihiko Suto , Hiroshi Egawa , Ichirou Sakuraba , Daisuke Hayashi , Keiji Sugano , Hans Madsboll , Klaus Damgaard Kristensen
IPC分类号： F28D5/00 , F25B39/04 , F28B1/02 , F28B9/02 , F28B9/04 , F28B3/04 , F28B5/00 , F25B40/04 , F25B9/00
CPC分类号： F25B39/04 , F25B9/002 , F25B40/04 , F28B1/02 , F28B3/04 , F28B5/00 , F28B9/02 , F28B9/04
摘要： The condensing apparatus 71 includes: a compressor 10 which has a compression part 20 compressing a working fluid; a condenser 13 which condenses the working fluid compressed by the compression part 20; and a spray mechanism 81 including a nozzle 82 which sprays a cooling fluid into a fluid passage 91 to cool the working fluid flowing through the fluid passage 91 between a discharge opening CS2 of the compression part 20 and an inlet 13a of the condenser 13.

7. 发明授权

US09188135B2 Axial flow compressor 有权
标题翻译：轴流压缩机
公开(公告)号：US09188135B2
公开(公告)日：2015-11-17
申请号：US13635551
申请日：2011-03-15
申请人： Yoshihiro Nakayama , Yoshitaka Baba , Satoshi Ide , Koichiro Iizuka , Ryo Fujisawa , Masatake Toshima , Kunihiko Suto , Kazutaka Kurashige , Ichirou Sakuraba , Daisuke Hayashi , Keiji Sugano , Svend Rasmussen , Ziad Al-Janabi , Finn Jensen , Lars Bay Moller , Hans Madsboll , Christian Svarregaard-Jensen , Klaus Damgaard Kristensen
发明人： Yoshihiro Nakayama , Yoshitaka Baba , Satoshi Ide , Koichiro Iizuka , Ryo Fujisawa , Masatake Toshima , Kunihiko Suto , Kazutaka Kurashige , Ichirou Sakuraba , Daisuke Hayashi , Keiji Sugano , Svend Rasmussen , Ziad Al-Janabi , Finn Jensen , Lars Bay Moller , Hans Madsboll , Christian Svarregaard-Jensen , Klaus Damgaard Kristensen
IPC分类号： F04D29/32 , F04D29/053 , F04D29/26 , F04D19/02 , F04D29/02
CPC分类号： F04D29/266 , F01D5/066 , F04D19/02 , F04D29/023 , F04D29/053 , F04D29/321 , F05D2230/642 , F05D2230/90 , F05D2300/171 , F05D2300/173 , F05D2300/174 , F05D2300/50212
摘要： An axial flow compressor includes: a rotor having a rotor vane; a first pressing member joined to one end surface of the rotor; a second pressing member joined to the other end surface of the rotor; a rotor shaft portion penetrating the first pressing member, the rotor and the second pressing member; and a nut which fixes the first pressing member and the second pressing member on the rotor shaft portion with the first pressing member and the second pressing member holding the rotor between. The rotor shaft portion is made of a material having a lower linear expansion coefficient than that of a material making at least a part of the rotor. The material making at least a part of the rotor may be aluminum or aluminum alloy.
摘要翻译：轴流式压缩机包括：具有转子叶片的转子; 与转子的一个端面接合的第一按压部件; 与转子的另一端面接合的第二按压部件; 穿过第一按压构件，转子和第二按压构件的转子轴部; 以及将所述第一按压部件和所述第二按压部件固定在所述转子轴部上的螺母，所述第一按压部件和所述第二按压部件保持所述转子。转子轴部由具有比制造转子的至少一部分的材料的线性膨胀系数低的材料制成。制造转子的至少一部分的材料可以是铝或铝合金。

8. 发明授权

US09082593B2 Electrode having gas discharge function and plasma processing apparatus 有权
标题翻译：具有气体放电功能的电极和等离子体处理装置
公开(公告)号：US09082593B2
公开(公告)日：2015-07-14
申请号：US13435689
申请日：2012-03-30
申请人： Daisuke Hayashi , Toshifumi Ishida , Norihiko Amikura
发明人： Daisuke Hayashi , Toshifumi Ishida , Norihiko Amikura
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01J37/32 , H01J1/02 , C23F1/12 , H01J1/00
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/45563 , C23C16/45565 , C23C16/45576 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/12 , H01J1/00 , H01J1/02 , H01J37/32532
摘要： An electrode having a gas discharge function, where the degree of freedom related to a maximum gas flow rate is abundant, an electrode cover member may be thinned, and a change of a gas behavior according to time is difficult to be generated in a processing chamber during gas introduction. The electrode includes: a base material having a plurality of gas holes; and an electrode cover member having a plurality of gas holes respectively corresponding to the plurality of gas holes of the base material in a one-to-one manner, fixed to the base material, and disposed facing a processing space in which the object is plasma-processed, wherein a gas hole diameter of the electrode cover member is larger than a gas hole diameter of the base material.
摘要翻译：具有气体放电功能的电极，其中与最大气体流量相关的自由度丰富，电极盖构件可能变薄，并且在处理室中难以产生根据时间的气体性能的变化在气体引入期间。电极包括：具有多个气孔的基材; 以及电极盖构件，其具有分别对应于所述基材的所述多个气孔的多个气孔，所述多个气孔以一对一的方式固定到所述基材上，并且面对所述物体为等离子体的处理空间其特征在于，所述电极盖部件的气孔直径大于所述基材的气孔直径。

9. 发明授权

US08623172B2 Gas flow path structure and substrate processing apparatus 有权
标题翻译：气体流路结构和基板处理装置
公开(公告)号：US08623172B2
公开(公告)日：2014-01-07
申请号：US12749642
申请日：2010-03-30
申请人： Daisuke Hayashi
发明人： Daisuke Hayashi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C23C16/455 , C23C16/50 , C23C16/503
CPC分类号： H01J37/32568
摘要： A substrate processing apparatus includes: a depressurizable processing chamber 11; a shaft 26 supporting a facing electrode 24 provided within the processing chamber 11 while allowing the facing electrode 24 to be movable with respect to a mounting electrode 12; a first ring-shaped bellows 31 concentrically installed at an outer peripheral portion of the shaft 26; and a second bellows 32 concentrically installed at an outer peripheral portion of the first bellows 31. The first bellows 31 absorbs a displacement of the facing electrode 24 with respect to a wall surface 13 at a penetration portion where the shaft 26 penetrates the wall surface 13 of the processing chamber 11, and seals the inside of the processing chamber 11 against the ambient atmosphere around the shaft 26. A ring-shaped gas flow path 35 is formed by the first bellows 31 and the second bellows 32.
摘要翻译：基板处理装置包括：可减压处理室11; 轴26，其支撑设置在处理室11内的面对电极24，同时允许面对电极24能够相对于安装电极12移动; 同心地安装在轴26的外周部分的第一环形波纹管31; 以及同心地安装在第一波纹管31的外周部分的第二波纹管32.第一波纹管31在轴26穿透壁表面13的穿透部分吸收面对电极24相对于壁表面13的位移并且密封处理室11的内部抵靠围绕轴26的环境大气。环形气体流路35由第一波纹管31和第二波纹管32形成。

10. 发明授权

US08459290B2 Material gas concentration control system 有权
标题翻译：物质气体浓度控制系统
公开(公告)号：US08459290B2
公开(公告)日：2013-06-11
申请号：US12610019
申请日：2009-10-30
申请人： Masakazu Minami , Daisuke Hayashi , Yuhei Sakaguchi , Katsumi Nishimura , Masaki Inoue , Kotaro Takijiri
发明人： Masakazu Minami , Daisuke Hayashi , Yuhei Sakaguchi , Katsumi Nishimura , Masaki Inoue , Kotaro Takijiri
IPC分类号： B05C11/00
CPC分类号： G05D11/132 , Y10T137/0396 , Y10T137/2499 , Y10T137/2509 , Y10T137/2708
摘要： A material gas concentration control system for keeping a concentration of a material gas in a mixed gas constant comprising a tank to accommodate the material, an inlet line to input a carrier gas for evaporating the accommodated material into the tank, and an outlet line to output the mixed gas consisting of the material gas evaporated in the tank and the carrier gas, and further comprising a first valve arranged in the inlet line, a concentration measuring part that measures the concentration of the material gas in the mixed gas, and a concentration control part that controls an open degree of the first valve so as to make the measured concentration of the material gas measured by the concentration measuring part become the previously determined set concentration.
摘要翻译：一种材料气体浓度控制系统，用于保持包含罐的混合气体中的材料气体的浓度恒定以容纳材料，输入用于将所容纳的材料蒸发到罐中的载气的输入管线和输出的出口管线所述混合气体由在所述罐中的所述原料气体和所述载气组成，还包括配置在所述入口管路中的第一阀，测量所述混合气体中的原料气体的浓度的浓度测定部，控制第一阀的开度的部分，使得由浓度测量部测量的材料气体的测量浓度变为预先确定的设定浓度。

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